ES 330 Electronics II Homework # 9 (Fall 2017 Due Monday, December 4, 2017)
|
|
- Stanley Small
- 5 years ago
- Views:
Transcription
1 Pag1 Na OLUTON E 330 Elctronics Howork # 9 (Fall 017 Du Monday, Dcbr 4, 017) Probl 1 (14 points) Dsign a MO diffrntial aplifir illsuratd in th schatic blow to oprat at O = 0.5 olt with a transconductanc g = 1 A/. Find th (W/L) ratio and th bias currnt to t ths rquirnts. Th procss tchnology usd to construct th NMO dics ha paratrs alus of t = 0.5 olt and nox = 0.4 A/. Assu th two dics ar ntical and ignor th drain-to-sourc rsistanc r0. g D / A A / / 0.5 and thn O O O 1 W L D n OX O 1 1 A W W 0.5 A L L = _0.5_ A (W/L) = _10_
2 Pag Probl (1 points) Dsign a MO diffrntial aplifir to oprat fro powr supply oltags of DD = 1 and = -1, and dissipat at ost 1 W of powr P at its quiscnt stat (i.., no applid input signal). Find th alu of O so that a alu for th diffrntial input oltag, naly, = 0.5 olt, strs all currnt to on dic (i.., no currnt to th othr dic so that on dic is on and othr is off). Th agnitud of th diffrntial oltag gain Adiff is to b 10 /. Assu dic paratrs of nox = 0.4 A/ and nglct th Early ffct (i.., ignor r0). Find currnt, th drain load rsistor RD and th (W/L) ratio. Th quiscnt powr dissipation is P ( ) ; DD olts, and th axiu allowabl currnt is 1 W 0.5 A Th alu of O can b found fro th rlationship, 0.5 O 0.5 O 0.18 ( /) 0.5 A Thn g is gin by g Th diffrntial gain is gin by A g R ; A diff D D A 10 so 10 =.8 R R 3.6 k Finally, w dtrin th ( W / L) ratio fro 1 W L D n OX O Thus, ; W 38.6 L O DD diff D 1 A W 0.5 A ) L A (0.4 (0.18) = _0.5_ A RD = _3.6_ k (W/L) = _38.6_
3 Pag3 Probl 3 (1 points) (a) Draw th A schatic circuit of th diffrntial half-circuit for th diffrntial aplifir cll shown idiatly blow. [This aks us of sytry in a DA.] To do this probl w bgin by drawing th schatic quialnt circuit: (b) Dri an xprssion for th diffrntial gain Ad (dfind as od /) as a function of g, RD and brging rsistor R. Nglct th Early ffct (i.., ignor r0). Using sytry, a irtual ground appars at th point of rsistor R (giing two rsistors of alu R / ach). Hnc, od RD grd Ad 1 R gr 1 g (c) Ealuat th diffrntial oltag gain with R = 0?
4 Pag4 For rsistor R 0. od RD RD Ad grd ; as would b xpctd. 1 R 1 g g (d) What is th alu of R (xprss it in trs of 1/g) that rducs th gain calulatd in part (b) abo to on-half of that alu? To rduc th gain to on-half ( i.., A /), w rquir th condition R 1 ; thrfor, R g g d Probl 4 (1 points) onsr th BJT diffrntial aplifir shown blow. nitially assu is ry larg. (a) What is th largst input coon-od signal that can b applid whil th BJTs rain confortably within th acti rgion of opration with B = 0 olt? Writ an xprssion in trs of, currnt and rsistanc R. M ax R (b) f th aailabl powr supply is.0 olts, what is th alu of R that should b chosn to allow a coon-od input signal of 1 olt?
5 Pag5 For olts, M ax ( R ); thrfor W ha R olts (c) Using th R alu you found in part (b), slct alus for and R. Now w assu that th currnt gain = 100. Us th largst possibl alu for currnt subjct to th constraint that th bas currnt of ach transistor (gin that dis qually) should not xcd A (0.00 A). W can writ a rlationship for bas currnt B ( /) 1 μa Gin: = μa uppos w slct = 0.4 A, thn R = A B Probl 5 (3 points) Dsign a BJT diffrntial aplifir to aplify a diffrntial input signal of 0.1 olt and pro a diffrntial output signal of olts. To nsur adquat linarlity it is rquird to liit th signal aplitud across ach bas-ittr junction to a axiu of 5 illiolts. Yt anothr dsign rquirnt is that th diffrntial input rsistanc b at last 100 k. Th BJTs that ar usd in this diffrntial aplifir ha a = 100 (how connint!). lct a circuit configuration and spcify th coponnt alus (.g., powr supply oltag and rsistor alus) for all coponnts. You ay us an al currnt sourc for stting th tail currnt (EE) in th diffrntial aplifir. [Hint: You will probably want to us ittr dgnration rsistors.] nput oltag 100 appars across (r R ). Thus, th signal across ( r R ) is 50. Bcaus th signal across rsistor r is 5 for sall-signal condition, it follows that th signal across rsistor R is (50-5) = 45. Thrfor, R = 9 r
6 Pag6 Th input rsistanc R is R = ( +1)( r + R ) R = 101 ( r + R ) 0 ( r 9 r ) 0 (10 r ) Now to obtain R = 100 k, r TH W gt r 50 ; Fro r E 0.5 A o =, giing = 1 A ; E Th Gain is gin by bcaus alpha is ( 1) 1 W rquir a oltag gain of 0 R 10 k Hnc, to choos f th D oltag drop across R E od R R Gain ( r + R ) r + R and R = 9 r = 450 ; thus 0 R 500, w nd inforation for th M rang. is 5 olts and th collctor oltag swing is liitd to 1 olt, = 10 olts will b adquat.
ES 330 Electronics II Homework # 5 (Fall 2016 Due Wednesday, October 4, 2017)
Pag1 Na olutions E 33 Elctonics II Howok # 5 (Fall 216 Du Wdnsday, Octob 4, 217) Pobl 1 (25 pots) A coon-itt aplifi uss a BJT with cunt ga = 1 whn biasd at I =.5 A. It has a collcto sistanc of = 1 k. (a)
More informationAt the end of this lesson, the students should be able to understand:
Instructional Objctivs: At th nd of this lsson, th studnts should b abl to undrstand: Dsign thod for variabl load Equivalnt strss on shaft Dsign basd on stiffnss and torsional rigidit Critical spd of shaft
More informationExam 1. It is important that you clearly show your work and mark the final answer clearly, closed book, closed notes, no calculator.
Exam N a m : _ S O L U T I O N P U I D : I n s t r u c t i o n s : It is important that you clarly show your work and mark th final answr clarly, closd book, closd nots, no calculator. T i m : h o u r
More informationElectronic Circuits. BJT Amplifiers. Manar Mohaisen Office: F208 Department of EECE
Elctronic Circuits BJT mplifirs Manar Mohaisn Offic: F208 Email: manar.subhi@kut.ac.kr Dpartmnt of EECE viw of th Prcdnt Lctur Explain th DC Oprating Point Explain th Voltag-dividr Bias Othr Bias Mthods
More informationDifferential Equations
UNIT I Diffrntial Equations.0 INTRODUCTION W li in a world of intrrlatd changing ntitis. Th locit of a falling bod changs with distanc, th position of th arth changs with tim, th ara of a circl changs
More informationDifferential Amplifiers (Ch. 10)
Differential Amplifiers (h. 0) 김영석 충북대학교전자정보대학 0.9. Email: kimys@cbu.ac.kr 0- ontents 0. General onsiderations 0. Bipolar Differential Pair 0.3 MOS Differential Pair 0.4 ascode Differential Amplifiers
More information9 Kinetic Theory of Gases
Contnt 9 Kintic hory of Gass By Liw Sau oh 9. Ial gas quation 9. rssur of a gas 9. Molcular kintic nrgy 9.4 h r..s. sp of olculs 9.5 Dgrs of fro an law of quipartition of nrgy 9.6 Intrnal nrgy of an ial
More informationPhysics. X m (cm)
Entranc xa 006-007 Physics Duration: hours I- [ pts] An oscillator A chanical oscillator (C) is ford of a solid (S), of ass, attachd to th xtrity A of a horizontal spring of stiffnss (constant) = 80 N/
More informationSAFE HANDS & IIT-ian's PACE EDT-15 (JEE) SOLUTIONS
It is not possibl to find flu through biggr loop dirctly So w will find cofficint of mutual inductanc btwn two loops and thn find th flu through biggr loop Also rmmbr M = M ( ) ( ) EDT- (JEE) SOLUTIONS
More informationME 300 Exam 1 October 9, :30 p.m. to 7:30 p.m.
CIRCLE YOUR LECTURE BELOW: First Na Last Na 10:0 a.. 1:0 p.. Naik Gor ME 00 Exa 1 Octobr 9, 014 6:0 p.. to 7:0 p.. INSTRUCTIONS 1. This is a closd book and closd nots xaination. You ar providd with an
More informationExperiment #9 BJT Dynamic Circuits
Exprimnt #9 BJT Dynamic Circuits Jonathan Rodrick Hakan Durmus Scott Kilpatrick Burgss Introduction: In th last la, w larnd th point of iasing an analog circuit corrctly is so th activ dvics within th
More informationLecture 28 Field-Effect Transistors
Lecture 8 Field-Effect Transistors Field-Effect Transistors 1. Understand MOSFET operation.. Analyze basic FET amplifiers using the loadline technique. 3. Analyze bias circuits. 4. Use small-signal equialent
More informationProblem Set 4 Solutions Distributed: February 26, 2016 Due: March 4, 2016
Probl St 4 Solutions Distributd: Fbruary 6, 06 Du: March 4, 06 McQuarri Probls 5-9 Ovrlay th two plots using Excl or Mathatica. S additional conts blow. Th final rsult of Exapl 5-3 dfins th forc constant
More informationLecture #15. Bipolar Junction Transistors (BJTs)
ctur #5 OUTN Th iolar Junction Transistor Fundamntals dal Transistor Analysis Rading: hatr 0,. 30 ctur 5, Slid iolar Junction Transistors (JTs Ovr th ast 3 ads, th highr layout dnsity and low-owr advantag
More informationECE 407 Computer Aided Design for Electronic Systems. Instructor: Maria K. Michael. Overview. CAD tools for multi-level logic synthesis:
407 Computr Aidd Dsign for Elctronic Systms Multi-lvl Logic Synthsis Instructor: Maria K. Michal 1 Ovrviw Major Synthsis Phass Logic Synthsis: 2-lvl Multi-lvl FSM CAD tools for multi-lvl logic synthsis:
More informationLast time. Resistors. Circuits. Question. Quick Quiz. Quick Quiz. ( V c. Which bulb is brighter? A. A B. B. C. Both the same
Last tim Bgin circuits Rsistors Circuits Today Rsistor circuits Start rsistor-capacitor circuits Physical layout Schmatic layout Tu. Oct. 13, 2009 Physics 208 Lctur 12 1 Tu. Oct. 13, 2009 Physics 208 Lctur
More informationECE 342 Electronic Circuits. Lecture 6 MOS Transistors
ECE 342 Electronic Circuits Lecture 6 MOS Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu 1 NMOS Transistor Typically L = 0.1 to 3 m, W = 0.2
More informationMaxwellian Collisions
Maxwllian Collisions Maxwll ralizd arly on that th particular typ of collision in which th cross-sction varis at Q rs 1/g offrs drastic siplifications. Intrstingly, this bhavior is physically corrct for
More informationThe Transmission Line Wave Equation
1//5 Th Transmission Lin Wav Equation.doc 1/6 Th Transmission Lin Wav Equation Q: So, what functions I (z) and V (z) do satisfy both tlgraphr s quations?? A: To mak this asir, w will combin th tlgraphr
More informationECE 2210 / 00 Phasor Examples
EE 0 / 00 Phasor Exampls. Add th sinusoidal voltags v ( t ) 4.5. cos( t 30. and v ( t ) 3.. cos( t 5. v ( t) using phasor notation, draw a phasor diagram of th thr phasors, thn convrt back to tim domain
More informationA 1 A 2. a) Find the wavelength of the radio waves. Since c = f, then = c/f = (3x10 8 m/s) / (30x10 6 Hz) = 10m.
1. Young s doubl-slit xprint undrlis th instrunt landing syst at ost airports and is usd to guid aircraft to saf landings whn th visibility is poor. Suppos that a pilot is trying to align hr plan with
More informationECE 344 Microwave Fundamentals
ECE 44 Microwav Fundamntals Lctur 08: Powr Dividrs and Couplrs Part Prpard By Dr. hrif Hkal 4/0/08 Microwav Dvics 4/0/08 Microwav Dvics 4/0/08 Powr Dividrs and Couplrs Powr dividrs, combinrs and dirctional
More informationEE 6882 Statistical Methods for Video Indexing and Analysis
EE 6882 Statistical Mthods for Vido Indxing and Analysis Fall 2004 Prof. Shih-Fu Chang http://www..colubia.du/~sfchang Lctur 3 Part B (9/5/04) Exapl of E-M: Machin Translation Brown t al 993 A translation
More informationCalculus Revision A2 Level
alculus Rvision A Lvl Tabl of drivativs a n sin cos tan d an sc n cos sin Fro AS * NB sc cos sc cos hain rul othrwis known as th function of a function or coposit rul. d d Eapl (i) (ii) Obtain th drivativ
More information1 Input-Output Stability
Inut-Outut Stability Inut-outut stability analysis allows us to analyz th stability of a givn syst without knowing th intrnal stat x of th syst. Bfor going forward, w hav to introduc so inut-outut athatical
More informationGENERATING GAUSSIAN FUNCTIONS USING LOW- VOLTAGE MOS-TRANSLINEAR CIRCUITS
ENERATN AUSSAN FUNCTONS USN O- OTAE MOS-TRANSNEAR CRCUTS SANCHEZ-OPEZ CAROS 1, AZ-SANCHEZ AEJANRO, TEO-CUAUTE ESTEBAN Elctronics partmnt NAOE uis Enriqu Erro no. 1. P.O.Box 51 and 16. 7 MEXCO Abstract:
More informationVoltage, Current, Power, Series Resistance, Parallel Resistance, and Diodes
Lctur 1. oltag, Currnt, Powr, Sris sistanc, Paralll sistanc, and Diods Whn you start to dal with lctronics thr ar thr main concpts to start with: Nam Symbol Unit oltag volt Currnt ampr Powr W watt oltag
More informationAddition of angular momentum
Addition of angular momntum April, 07 Oftn w nd to combin diffrnt sourcs of angular momntum to charactriz th total angular momntum of a systm, or to divid th total angular momntum into parts to valuat
More informationEE 330 Lecture 30. Basic amplifier architectures
33 Lecture 3 asic aplifier architectures asic plifier Structures MOS and ipolar Transistors oth have 3 priary terinals MOS transistor has a fourth terinal that is generally considered a parasitic D terinal
More informationECEN 5004, Spring 2018 Active Microwave Circuits Zoya Popovic, University of Colorado, Boulder LECTURE 2 SOME PASSIVE CIRCUITS
ECEN 54, pring 18 Activ Microwav Circuits Zoya Popovic, Univrsity of Colorado, Bouldr LECTURE OME PAIVE CIRCUIT W hav alrady rviwd atching circuits, which ar -port ntworks. Thy ar passiv and can b rciprocal
More informationLecture 36: MOSFET Common Drain (Source Follower) Amplifier.
Whites, EE 320 Lecture 36 Pae 1 of 10 Lecture 36: MOSFET Coon Drain (Source Follower) Aplifier. The third, and last, discrete-for MOSFET aplifier we ll consider in this course is the coon drain aplifier.
More informationCMOS Analog Circuits
CMOS Analog Circuits L6: Common Source Amplifier-1 (.8.13) B. Mazhari Dept. of EE, IIT Kanpur 19 Problem statement : Design an amplifier which has the following characteristics: + CC O in R L - CC A 100
More informationGeneral Notes About 2007 AP Physics Scoring Guidelines
AP PHYSICS C: ELECTRICITY AND MAGNETISM 2007 SCORING GUIDELINES Gnral Nots About 2007 AP Physics Scoring Guidlins 1. Th solutions contain th most common mthod of solving th fr-rspons qustions and th allocation
More informationLecture 18. Common Source Stage
ecture 8 OUTINE Basic MOSFET amplifier MOSFET biasing MOSFET current sources Common source amplifier eading: Chap. 7. 7.7. EE05 Spring 008 ecture 8, Slide Prof. Wu, UC Berkeley Common Source Stage λ =
More informationLinear-Phase FIR Transfer Functions. Functions. Functions. Functions. Functions. Functions. Let
It is impossibl to dsign an IIR transfr function with an xact linar-phas It is always possibl to dsign an FIR transfr function with an xact linar-phas rspons W now dvlop th forms of th linarphas FIR transfr
More informationAndre Schneider P621
ndr Schnidr P61 Probl St #03 Novbr 6, 009 1 Srdnicki 10.3 Vrtx for L 1 = gχϕ ϕ. Th vrtx factor is ig. ϕ ig χ ϕ igur 1: ynan diagra for L 1 = gχϕ ϕ. Srdnicki 11.1 a) Dcay rat for th raction ig igur : ynan
More informationDesign Guidelines for Quartz Crystal Oscillators. R 1 Motional Resistance L 1 Motional Inductance C 1 Motional Capacitance C 0 Shunt Capacitance
TECHNICAL NTE 30 Dsign Guidlins for Quartz Crystal scillators Introduction A CMS Pirc oscillator circuit is wll known and is widly usd for its xcllnt frquncy stability and th wid rang of frquncis ovr which
More informationSynchronous machines
Synchronous gnrator (altrnator): transorms mchanical nrgy into lctric nrgy; dsignd to gnrat sinusoidal oltags and currnts; usd in most powr plants, or car altrnators, tc. Synchronous motor: transorms lctric
More informationIXTT3N200P3HV IXTH3N200P3HV
Advanc Tchnical Information High Voltag Powr MOSFET S I R S(on) = V = A N-Channl Enhancmnt Mod TO-HV (IXTT) G S (Tab) Symbol Tst Conditions Maximum Ratings S = C to C V V GR = C to C, R GS = M V S Continuous
More informationEXST Regression Techniques Page 1
EXST704 - Rgrssion Tchniqus Pag 1 Masurmnt rrors in X W hav assumd that all variation is in Y. Masurmnt rror in this variabl will not ffct th rsults, as long as thy ar uncorrlatd and unbiasd, sinc thy
More informationy cos x = cos xdx = sin x + c y = tan x + c sec x But, y = 1 when x = 0 giving c = 1. y = tan x + sec x (A1) (C4) OR y cos x = sin x + 1 [8]
DIFF EQ - OPTION. Sol th iffrntial quation tan +, 0
More informationElectrochemical Energy Systems Spring 2014 MIT, M. Z. Bazant. Midterm Exam
10.66 Elctrochmical Enrgy Systms Spring 014 MIT, M. Z. Bazant Midtrm Exam Instructions. This is a tak-hom, opn-book xam du in Lctur. Lat xams will not b accptd. You may consult any books, handouts, or
More informationSECTION where P (cos θ, sin θ) and Q(cos θ, sin θ) are polynomials in cos θ and sin θ, provided Q is never equal to zero.
SETION 6. 57 6. Evaluation of Dfinit Intgrals Exampl 6.6 W hav usd dfinit intgrals to valuat contour intgrals. It may com as a surpris to larn that contour intgrals and rsidus can b usd to valuat crtain
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NMOS Transistor Capacitances: Saturation Region
EE105 Fall 014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 NMOS Transistor Capacitances: Saturation Region Drain no longer connected to channel
More informationDifferentiation of Exponential Functions
Calculus Modul C Diffrntiation of Eponntial Functions Copyright This publication Th Northrn Albrta Institut of Tchnology 007. All Rights Rsrvd. LAST REVISED March, 009 Introduction to Diffrntiation of
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationChapter 6 Folding. Folding
Chaptr 6 Folding Wintr 1 Mokhtar Abolaz Folding Th folding transformation is usd to systmatically dtrmin th control circuits in DSP architctur whr multipl algorithm oprations ar tim-multiplxd to a singl
More informationQuasi-Classical States of the Simple Harmonic Oscillator
Quasi-Classical Stats of th Simpl Harmonic Oscillator (Draft Vrsion) Introduction: Why Look for Eignstats of th Annihilation Oprator? Excpt for th ground stat, th corrspondnc btwn th quantum nrgy ignstats
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date - Dec 16, 013 Duration:.5 hrs ECE331 Electronic Circuits Lecturer - D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationChapter 6. The Discrete Fourier Transform and The Fast Fourier Transform
Pusan ational Univrsity Chaptr 6. Th Discrt Fourir Transform and Th Fast Fourir Transform 6. Introduction Frquncy rsponss of discrt linar tim invariant systms ar rprsntd by Fourir transform or z-transforms.
More informationUNTYPED LAMBDA CALCULUS (II)
1 UNTYPED LAMBDA CALCULUS (II) RECALL: CALL-BY-VALUE O.S. Basic rul Sarch ruls: (\x.) v [v/x] 1 1 1 1 v v CALL-BY-VALUE EVALUATION EXAMPLE (\x. x x) (\y. y) x x [\y. y / x] = (\y. y) (\y. y) y [\y. y /
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130
ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED
More information4.2 Design of Sections for Flexure
4. Dsign of Sctions for Flxur This sction covrs th following topics Prliminary Dsign Final Dsign for Typ 1 Mmbrs Spcial Cas Calculation of Momnt Dmand For simply supportd prstrssd bams, th maximum momnt
More informationP. R. Nelson 1 ECE418 - VLSI. Midterm Exam. Solutions
P. R. Nelson 1 ECE418 - VLSI Midterm Exam Solutions 1. (8 points) Draw the cross-section view for A-A. The cross-section view is as shown below.. ( points) Can you tell which of the metal1 regions is the
More information2.010 Fall 2000 Homework 3 Solution
.00 Fall 000 Howork 3 Solution Probl # Ma drin by controlld-forc actuator a. Clod-loop tranfr function fro rfrnc oltag input to locity output. h firt tp i to forulat a odl. ranlating a: x Actuator: f act
More informationSensors and Actuators Introduction to sensors
Snsrs and Actuatrs Intrductin t snsrs Sandr Stuijk (s.stuijk@tu.nl) Dpartmnt f Elctrical Enginring Elctrnic Systms APAITIVE IUITS (haptr., 7., 9., 0.6,.,.) apaciti snsr capacitanc dpnds n physical prprtis
More informationCollisions between electrons and ions
DRAFT 1 Collisions btwn lctrons and ions Flix I. Parra Rudolf Pirls Cntr for Thortical Physics, Unirsity of Oxford, Oxford OX1 NP, UK This rsion is of 8 May 217 1. Introduction Th Fokkr-Planck collision
More informationClassical Magnetic Dipole
Lctur 18 1 Classical Magntic Dipol In gnral, a particl of mass m and charg q (not ncssarily a point charg), w hav q g L m whr g is calld th gyromagntic ratio, which accounts for th ffcts of non-point charg
More informationHigher order derivatives
Robrto s Nots on Diffrntial Calculus Chaptr 4: Basic diffrntiation ruls Sction 7 Highr ordr drivativs What you nd to know alrady: Basic diffrntiation ruls. What you can larn hr: How to rpat th procss of
More informationProblem Set 6 Solutions
6.04/18.06J Mathmatics for Computr Scinc March 15, 005 Srini Dvadas and Eric Lhman Problm St 6 Solutions Du: Monday, March 8 at 9 PM in Room 3-044 Problm 1. Sammy th Shark is a financial srvic providr
More informationElectronic Circuits. Transistor Bias Circuits. Manar Mohaisen Office: F208 Department of EECE
lectronic ircuits Transistor Bias ircuits Manar Mohaisen Office: F208 mail: manar.subhi@kut.ac.kr Department of Review of the Precedent Lecture Bipolar Junction Transistor (BJT) BJT haracteristics and
More informationThe pn junction: 2 Current vs Voltage (IV) characteristics
Th pn junction: Currnt vs Voltag (V) charactristics Considr a pn junction in quilibrium with no applid xtrnal voltag: o th V E F E F V p-typ Dpltion rgion n-typ Elctron movmnt across th junction: 1. n
More informationEE 330 Lecture 31. Basic amplifier architectures. Common Emitter/Source Common Collector/Drain Common Base/Gate
33 Lecture 3 asic aplifier architectures oon itter/source oon ollector/drain oon ase/gate eview fro arlier Lecture Two-port representation of aplifiers plifiers can be odeled as a two-port y 2 2 y y 22
More information6.1 Integration by Parts and Present Value. Copyright Cengage Learning. All rights reserved.
6.1 Intgration by Parts and Prsnt Valu Copyright Cngag Larning. All rights rsrvd. Warm-Up: Find f () 1. F() = ln(+1). F() = 3 3. F() =. F() = ln ( 1) 5. F() = 6. F() = - Objctivs, Day #1 Studnts will b
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT-3 Department of Electrical and Computer Engineering Winter 2012 1. A common-emitter amplifier that can be represented by the following equivalent circuit,
More informationcycle that does not cross any edges (including its own), then it has at least
W prov th following thorm: Thorm If a K n is drawn in th plan in such a way that it has a hamiltonian cycl that dos not cross any dgs (including its own, thn it has at last n ( 4 48 π + O(n crossings Th
More informationECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION
ECE-343 Test 2: Mar 21, 2012 6:00-8:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationAddition of angular momentum
Addition of angular momntum April, 0 Oftn w nd to combin diffrnt sourcs of angular momntum to charactriz th total angular momntum of a systm, or to divid th total angular momntum into parts to valuat th
More information4. (5a + b) 7 & x 1 = (3x 1)log 10 4 = log (M1) [4] d = 3 [4] T 2 = 5 + = 16 or or 16.
. 7 7 7... 7 7 (n )0 7 (M) 0(n ) 00 n (A) S ((7) 0(0)) (M) (7 00) 8897 (A). (5a b) 7 7... (5a)... (M) 7 5 5 (a b ) 5 5 a b (M)(A) So th cofficint is 75 (A) (C) [] S (7 7) (M) () 8897 (A) (C) [] 5. x.55
More informationMAHALAKSHMI ENGINEERING COLLEGE
MAHALAKSHMI ENGINEERING COLLEGE TIRUCHIRAPALLI - 6. QUESTION WITH ANSWERS DEPARTMENT : CIVIL SEMESTER: V SUB.CODE/ NAME: CE 5 / Strngth of Matrials UNIT 4 STATE OF STRESS IN THREE DIMESIONS PART - A (
More informationNARAYANA I I T / P M T A C A D E M Y. C o m m o n P r a c t i c e T e s t 1 6 XII STD BATCHES [CF] Date: PHYSIS HEMISTRY MTHEMTIS
. (D). (A). (D). (D) 5. (B) 6. (A) 7. (A) 8. (A) 9. (B). (A). (D). (B). (B). (C) 5. (D) NARAYANA I I T / P M T A C A D E M Y C o m m o n P r a c t i c T s t 6 XII STD BATCHES [CF] Dat: 8.8.6 ANSWER PHYSIS
More informationFinal Exam Solutions
CS 2 Advancd Data Structurs and Algorithms Final Exam Solutions Jonathan Turnr /8/20. (0 points) Suppos that r is a root of som tr in a Fionacci hap. Assum that just for a dltmin opration, r has no childrn
More informationNote If the candidate believes that e x = 0 solves to x = 0 or gives an extra solution of x = 0, then withhold the final accuracy mark.
. (a) Eithr y = or ( 0, ) (b) Whn =, y = ( 0 + ) = 0 = 0 ( + ) = 0 ( )( ) = 0 Eithr = (for possibly abov) or = A 3. Not If th candidat blivs that = 0 solvs to = 0 or givs an tra solution of = 0, thn withhold
More informationME 200 Thermodynamics I Spring 2014 Examination 3 Thu 4/10/14 6:30 7:30 PM WTHR 200, CL50 224, PHY 112 LAST NAME FIRST NAME
M 00 hrodynac Sprng 014 xanaton 3 hu 4/10/14 6:30 7:30 PM WHR 00, CL50 4, PHY 11 Crcl your dvon: PHY 11 WHR 00 WHR 00 CL50 4 CL50 4 PHY 11 7:30 Joglkar 9:30 Wagrn 10:30 Gor 1:30 Chn :30 Woodland 4:30 Srcar
More informationBrief Introduction to Statistical Mechanics
Brif Introduction to Statistical Mchanics. Purpos: Ths nots ar intndd to provid a vry quick introduction to Statistical Mchanics. Th fild is of cours far mor vast than could b containd in ths fw pags.
More information10. Limits involving infinity
. Limits involving infinity It is known from th it ruls for fundamntal arithmtic oprations (+,-,, ) that if two functions hav finit its at a (finit or infinit) point, that is, thy ar convrgnt, th it of
More informationLegendre Wavelets for Systems of Fredholm Integral Equations of the Second Kind
World Applid Scincs Journal 9 (9): 8-, ISSN 88-495 IDOSI Publications, Lgndr Wavlts for Systs of Frdhol Intgral Equations of th Scond Kind a,b tb (t)= a, a,b a R, a. J. Biazar and H. Ebrahii Dpartnt of
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2
More informationElements of Statistical Thermodynamics
24 Elmnts of Statistical Thrmodynamics Statistical thrmodynamics is a branch of knowldg that has its own postulats and tchniqus. W do not attmpt to giv hr vn an introduction to th fild. In this chaptr,
More informationA Small-Signal Analysis of a BJT
3/28/2011 A mall ignal Analysis of a BJ lecture 1/12 A mall-ignal Analysis of a BJ he collector current i of a BJ is related to its base-emitter oltage as: i i e Jim tiles he Uni. of Kansas Dept. of EE
More informationINC 693, 481 Dynamics System and Modelling: Linear Graph Modeling II Dr.-Ing. Sudchai Boonto Assistant Professor
INC 69, 48 Dynamics Systm and Modlling: Linar Graph Modling II Dr.-Ing. Sudchai Boonto Assistant Profssor Dpartmnt of Control Systm and Instrumntation Enginring King Mongkut s Unnivrsity of Tchnology Thonuri
More informationLecture 10 OUTLINE. Reading: Chapter EE105 Spring 2008 Lecture 10, Slide 1 Prof. Wu, UC Berkeley
Lecture 0 OUTLIN BJT Aplifiers (3) itter follower (Coon-collector aplifier) Analysis of eitter follower core Ipact of source resistance Ipact of arly effect itter follower with biasin eadin: Chapter 5.3.3-5.4
More informationPower Dissipation. Where Does Power Go in CMOS?
Power Dissipation [Adapted from Chapter 5 of Digital Integrated Circuits, 2003, J. Rabaey et al.] Where Does Power Go in CMOS? Dynamic Power Consumption Charging and Discharging Capacitors Short Circuit
More informationCHAPTER 10. Consider the transmission lines for voltage and current as developed in Chapter 9 from the distributed equivalent circuit shown below.
CHAPTER 1 1. Sinusoidal Stady Stat in Transmission ins 1.1 Phasor Rprsntation of olta and Currnt Wavs Considr th transmission lins for volta and currnt as dvlopd in Chaptr 9 from th distributd quivalnt
More informationEE 434 Lecture 33. Logic Design
EE 434 Lecture 33 Logic Design Review from last time: Ask the inverter how it will interpret logic levels V IN V OUT V H =? V L =? V LARGE V H V L V H Review from last time: The two-inverter loop X Y X
More informationINC 693, 481 Dynamics System and Modelling: The Language of Bound Graphs Dr.-Ing. Sudchai Boonto Assistant Professor
INC 693, 48 Dynamics Systm and Modlling: Th Languag o Bound Graphs Dr.-Ing. Sudchai Boonto Assistant Prossor Dpartmnt o Control Systm and Instrumntation Enginring King Mongkut s Unnivrsity o Tchnology
More informationIXBT22N300HV IXBH22N300HV
High Voltag, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advanc Tchnical Information IXBTNHV IXBHNHV V CS = V = A V C(sat). TO-6HV (IXBT) Symbol Tst Conditions Maximum Ratings V CS = 5 C to
More informationSUMMARY. m = {m i j R Dm ; i = 1..n y, j = 1..n x } (3) d = {d i j R D d ; i = 1..n y, j = 1..n x } (4)
Nonlinar last squars invrsion of rflction cofficints using Baysian rgularization Tor Erik Rabbn and Bjørn Ursin, Norwgian Univrsity of Scinc and Tchnology SUMMARY Invrsion of sisic rflction cofficints
More informationLecture 16: Bipolar Junction Transistors. Large Signal Models.
Whits, EE 322 Ltur 16 Pag 1 of 8 Ltur 16: Bipolar Juntion Transistors. Larg Signal Modls. Transistors prform ky funtions in most ltroni iruits. This is rtainly tru in RF iruits, inluding th NorCal 40A.
More information10. The Discrete-Time Fourier Transform (DTFT)
Th Discrt-Tim Fourir Transform (DTFT Dfinition of th discrt-tim Fourir transform Th Fourir rprsntation of signals plays an important rol in both continuous and discrt signal procssing In this sction w
More informationHardy-Littlewood Conjecture and Exceptional real Zero. JinHua Fei. ChangLing Company of Electronic Technology Baoji Shannxi P.R.
Hardy-Littlwood Conjctur and Excptional ral Zro JinHua Fi ChangLing Company of Elctronic Tchnology Baoji Shannxi P.R.China E-mail: fijinhuayoujian@msn.com Abstract. In this papr, w assum that Hardy-Littlwood
More informationChemical Engineering 412
Chical Enginring 4 Introductory Nuclar Enginring Lctur 6 Nuclar Radiation Typs Ky oints Typs of cay Na roprtis athatical scriptions Cavats cay Charts (KNOW HOW TO USE!) Nuclar Equation for cay -Valus for
More informationChapter 13 Aggregate Supply
Chaptr 13 Aggrgat Supply 0 1 Larning Objctivs thr modls of aggrgat supply in which output dpnds positivly on th pric lvl in th short run th short-run tradoff btwn inflation and unmploymnt known as th Phillips
More informationChapter 3: Capacitors, Inductors, and Complex Impedance
haptr 3: apacitors, Inductors, and omplx Impdanc In this chaptr w introduc th concpt of complx rsistanc, or impdanc, by studying two ractiv circuit lmnts, th capacitor and th inductor. W will study capacitors
More informationThe Matrix Exponential
Th Matrix Exponntial (with xrciss) by Dan Klain Vrsion 28928 Corrctions and commnts ar wlcom Th Matrix Exponntial For ach n n complx matrix A, dfin th xponntial of A to b th matrix () A A k I + A + k!
More informationCramér-Rao Inequality: Let f(x; θ) be a probability density function with continuous parameter
WHEN THE CRAMÉR-RAO INEQUALITY PROVIDES NO INFORMATION STEVEN J. MILLER Abstract. W invstigat a on-paramtr family of probability dnsitis (rlatd to th Parto distribution, which dscribs many natural phnomna)
More informationDUAL P-CHANNEL MATCHED MOSFET PAIR
DVNCD INR DVICS, INC. D1102/D1102B D1102 DU P-CHNN MTCHD MOSFT PIR GNR DSCRIPTION Th D1102 is a monolithic dual P-channl matchd transistor pair intndd for a road rang of analog applications. Ths nhancmntmod
More informationCircuits. L2: MOS Models-2 (1 st Aug. 2013) B. Mazhari Dept. of EE, IIT Kanpur. B. Mazhari, IITK. G-Number
EE610: CMOS Analog Circuits L: MOS Models- (1 st Aug. 013) B. Mazhari Dept. of EE, IIT Kanpur 3 NMOS Models MOS MODEL Above Threshold Subthreshold ( GS > TN ) ( GS < TN ) Saturation ti Ti Triode ( DS >
More informationCS 361 Meeting 12 10/3/18
CS 36 Mting 2 /3/8 Announcmnts. Homwork 4 is du Friday. If Friday is Mountain Day, homwork should b turnd in at my offic or th dpartmnt offic bfor 4. 2. Homwork 5 will b availabl ovr th wknd. 3. Our midtrm
More informationChapter 28: Alternating Current
hapter 8: Alternating urrent Phasors and Alternating urrents Alternating current (A current) urrent which varies sinusoidally in tie is called alternating current (A) as opposed to direct current (D).
More information