DUAL P-CHANNEL MATCHED MOSFET PAIR

Transcription

1 DVNCD INR DVICS, INC. D1102/D1102B D1102 DU P-CHNN MTCHD MOSFT PIR GNR DSCRIPTION Th D1102 is a monolithic dual P-channl matchd transistor pair intndd for a road rang of analog applications. Ths nhancmntmod transistors ar manufacturd with dvancd inar Dvics' nhancd CMOS silicon gat CMOS procss. Th D1102 offrs high input impdanc and ngativ currnt tmpratur cofficint. Th transistor pair is matchd for minimum offst voltag and diffrntial thrmal rspons, and it is dsignd for switching and amplifying applications in +2V to +12V systms whr low input ias currnt, low input capacitanc and fast switching spd ar dsird. Sinc ths ar MOSFT dvics, thy fatur vry larg (almost infinit) currnt gain in a low frquncy, or nar DC, oprating nvironmnt. Whn usd with an D1101, a dual CMOS analog switch can constructd. In addition, th D1102 is intndd as a uilding lock for diffrntial amplifir input stags, transmission gats, and multiplxr applications. PPICTIONS Prcision currnt mirrors Prcision currnt sourcs nalog switchs Chopprs Diffrntial amplifir input stag Voltag comparator Data convrtrs Sampl and Hold nalog invrtr PIN CONFIGURTION Th D1102 is suital for us in prcision applications which rquir vry high currnt gain, ta, such as currnt mirrors and currnt sourcs. Th high input impdanc and th high DC currnt gain of th Fild ffct Transistors rsult in xtrmly low currnt loss through th control gat. Th DC currnt gain is limitd y th gat input lakag currnt, which is spcifid at 50p at room tmpratur. For xampl, DC ta of th dvic at a drain currnt of 5m at 25 C is = 5m/50p = 100,000,000. SOURC 1 GT 1 DRIN 1 IC SUBSTRT SOURC 2 GT 2 DRIN 2 FTURS ow thrshold voltag of 0.7V ow input capacitanc ow Vos grads 2mV, 5mV, 10mV High input impdanc Ω typical ow input and output lakag currnts Ngativ currnt (I DS ) tmpratur cofficint nhancmnt-mod (normally off) DC currnt gain 10 9 RoHS compliant BOCK DIGRM TOP VIW S, P, D PCKGS * IC pin is intrnally connctd. Do not connct xtrnally. ORDRING INFORMTION ( suffix dnots lad-fr (RoHS)) GT 1 (2) Oprating Tmpratur Rang C to +7C C to +7C -55 C to +125 C 8-Pin 8-Pin 8-Pin Small Outlin Plastic Dip CRDIP Packag (SOIC) Packag Packag DRIN 1 (3) DRIN 2 (5) SOURC 1 (1) SUBSTRT (8) SOURC 2 (7) D1102S D1102P D1102BS D1102BP D1102S D1102P D1102D GT 2 (6) * Contact factory for ladd (non-rohs) or high tmpratur vrsions. Rv dvancd inar Dvics, Inc. 415 Tasman Driv, Sunnyval, C Tl: (408) Fax: (408)

2 BSOUT MXIMUM RTINGS Drain-sourc voltag, V DS -10.6V Gat-sourc voltag, V GS -10.6V Powr dissipation 500mW Oprating tmpratur rang S, Ppackags C to +7C D packag -55 C to +125 C Storag tmpratur rang -65 C to +15C ad tmpratur, 10 sconds +26C CUTION: SD Snsitiv Dvic. Us static control procdurs in SD controlld nvironmnt. OPRTING CTRIC CHRCTRISTICS T = 25 C unlss othrwis spcifid B 1102 Tst Paramtr Symol Min Typ Max Min Typ Max Min Typ Max Unit Conditions Gat Thrshold Voltag V T V I DS = -10µ V GS = V DS Offst Voltag V OS mv I DS = -100µ V GS = V DS V GS1 - V GS2 Gat Thrshold TC VT mv/ C Tmpratur Drift On Drain Currnt I DS (ON) m V GS = V DS = -5V Transconductanc G fs mmho V DS = -5V I DS = -10m Mismatch G fs % Output G OS µmho V DS = -5V I DS = -10m Conductanc Drain Sourc R DS(ON) Ω V DS = -0.1V V GS = -5V ON Rsistanc Drain Sourc ON Rsistanc R DS(ON) % V DS = -0.1V V GS = -5V Mismatch Drain Sourc Brakdown BV DSS V I DS = -10µ V GS =0V Voltag Off Drain Currnt I DS(OFF) n V DS =-12V V GS = 0V µ T = 125 C Gat akag I GSS p V DS =0V V GS =-12V Currnt n T = 125 C Input C ISS pf Capacitanc D1102/D1102B/D1102 dvancd inar Dvics 2 of 8

3 TYPIC PRFORMNC CHRCTRISTICS DRIN - SOURC CURRNT (m) OUTPUT CHRCTRISTICS T = 25 C V GS = -12V -10V -8V -6V -4V -2V DRIN-SOURC CURRNT (m) T = 25 C OW VOTG OUTPUT CHRCTRISTICS V GS = -12V -6V -4V -2V DRIN - SOURC VOTG (V) DRIN -SOURC VOTG (mv) FORWRD TRNSCONDUCTNC (µmho) FORWRD TRNSCONDUCTNC vs. DRIN - SOURC VOTG f = 1KHz T = +25 C I DS = -1m I DS = -5m T = +125 C DRIN-SOURC CURRNT (µ) TRNSFR CHRCTRISTIC WITH SUBSTRT BIS 2V 4V 6V 8V 10V 12V V GS = V DS T = 25 C DRIN - SOURC VOTG (V) GT - SOURC VOTG (V) DRIN - SOURC ON RSISTNC (Ω) R DS (ON) vs. GT - SOURC VOTG V DS = 0.4V T = +25 C T = +125 C GT - SOURC VOTG (V) OFF - DRIN SOURC CURRNT () -10X X X10-12 OFF DRIN - CURRNT vs. TMPRTUR V DS = -12V V GS = TMPRTUR ( C) D1102/D1102B/D1102 dvancd inar Dvics 3 of 8

4 TYPIC PPICTIONS CURRNT SOURC MIRROR CURRNT SOURC WITH GT CONTRO D1102, 1/2 D1107, or D1117 D1102, 1/2 D1107, or D1117 RST RST Digital ogic Control of Currnt Sourc Q 2 D1101, 1/2 D1106, or D1116, Q 2 : N - Channl MOSFT, : P - Channl MOSFT = = V+ -Vt = ~ 4 ON OFF 1/2 D1101, 1/4 D1106, or 1/2 D1116 : N - Channl MOSFT, : P - Channl MOSFT DIFFRNTI MPIFIR CURRNT SOURC MUTIPICTION V+ D1102, 1/2 D1107, or D1117 PMOS PIR = x N V IN + Q 2 NMOS PIR V OUT V IN - QST Q 2 QN D1101, 1/2 D1106, or D1116 Currnt Sourc, Q 2 : N - Channl MOSFT, : P - Channl MOSFT Q ST,..Q N : D1101, D1106, or D1116 N - Channl MOSFT D1102/D1102B/D1102 dvancd inar Dvics 4 of 8

5 TYPIC PPICTIONS (cont.) BSIC CURRNT SOURCS N- CHNN CURRNT SOURC P- CHNN CURRNT SOURC 5 Q D1102, 1/2 D1107, or D D1101, 1/2 D1106, or D1116 = = V + - Vt = ~ V = ~ 4, Q 2 : N - Channl MOSFT, : P - Channl MOSFT CSCOD CURRNT SOURCS 2 x D1102 or D1107 Q 2 Q 2 2 x D1101 or D1106 = = V + - 2Vt = ~ 3, Q 2,, : N - Channl MOSFT (D1101 or D1103) Q1, Q2, Q3, Q4: P - Channl MOSFT (D1102 or D1103) D1102/D1102B/D1102 dvancd inar Dvics 5 of 8

6 SOIC-8 PCKG DRWING 8 Pin Plastic SOIC Packag Millimtrs Inchs S (45 ) D Dim C D-8 Min Max Min Max BSC BSC H S S (45 ) H C D1102/D1102B/D1102 dvancd inar Dvics 6 of 8

7 PDIP-8 PCKG DRWING 8 Pin Plastic DIP Packag Millimtrs Inchs 1 Dim Min Max Min Max c S D D S c 1 D1102/D1102B/D1102 dvancd inar Dvics 7 of 8

8 CRDIP-8 PCKG DRWING 8 Pin CRDIP Packag 1 Millimtrs Inchs D Dim Min Max Min Max s C D BSC BSC BSC BSC S Ø C 1 D1102/D1102B/D1102 dvancd inar Dvics 8 of 8