N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

Transcription

1 ,, and Available on commercial versions N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 DESCRIPTION This family of,, and switching transistors are military qualified up to the JANTX level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website FEATURES JEDEC registered,, and number series. JAN, JANTX, and JANTX qualifications are available per MIL-PRF-19500/543. (See part nomenclature for all available options.) RoHS compliant versions available (commercial grade only). Low-profile metal can design. Military and other high-reliability applications. APPLICATIONS / BENEFITS Qualified Levels: JAN, JANTX, and JANTX TO-204AE (TO-3) Package Also available in: TO-254AA package (leaded) T1 & T1 MAXIMUM T A = +25 ºC unless otherwise stated Parameters / Test Conditions Symbol alue Unit Junction & Storage Temperature Range T J & T stg -55 to +150 C Thermal Resistance Junction-to-Case R ӨJC 0.83 o C/W Total Power T A = +25 C T C = +25 C (1) P T 150 W Drain-Source oltage, dc DS Gate-Source oltage, dc GS ± 20 Drain Current, T C = +25 ºC (2) Drain Current, T C = +100 ºC (2) Off-State Current (Peak Total alue) (3) Source Current Notes featured on next page I D I D I DM I S A A A (pk) A MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 1 of 9

2 ,, and NOTES: 1. Derate linearly by 1.2 W/ºC for T C > +25 ºC. 2. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may also be limited by pin diameter: 3. I DM = 4 x I D1 as calculated in note 2. MECHANICAL and PACKAGING CASE: TO-3 metal can. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on commercial grade only. MARKING: Manufacturer's ID, part number, date code. WEIGHT: Approximately 12.7 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTX = JANTX Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt I F R G DD DS GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 2 of 9

3 ,, and ELECTRICAL T A = +25 C, unless otherwise noted Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown oltage GS = 0, I D = 1.0 ma Gate-Source oltage (Threshold) DS GS, I D = 0.25 ma DS GS, I D = 0.25 ma, T J = +125 C DS GS, I D = 0.25 ma, T J = -55 C Gate Current GS = ± 20, DS = 0 GS = ± 20, DS = 0, T J = +125 C Drain Current GS = 0, DS = 80 GS = 0, DS = 160 GS = 0, DS = 320 GS = 0, DS = 400 Drain Current GS = 0, DS = 100, T J = +125 C GS = 0, DS = 200, T J = +125 C GS = 0, DS = 400, T J = +125 C GS = 0, DS = 500, T J = +125 C Drain Current GS = 0, DS = 80, T J = +125 C GS = 0, DS = 160, T J = +125 C GS = 0, DS = 320, T J = +125 C GS = 0, DS = 400, T J = +125 C Static Drain-Source On-State Resistance GS = 10, I D = 24.0 A pulsed GS = 10, I D = 19.0 A pulsed GS = 10, I D = 9.0 A pulsed GS = 10, I D = 7.75 A pulsed Static Drain-Source On-State Resistance GS = 10, I D = 38.0 A pulsed GS = 10, I D = 30.0 A pulsed GS = 10, I D = 14.0 A pulsed GS = 10, I D = 12.0 A pulsed Static Drain-Source On-State Resistance T J = +125 C GS = 10, I D = 24.0 A pulsed GS = 10, I D = 19.0 A pulsed GS = 10, I D = 9.0 A pulsed GS = 10, I D = 7.75 A pulsed Diode Forward oltage GS = 0, I D = 38.0 A pulsed GS = 0, I D = 30.0 A pulsed GS = 0, I D = 14.0 A pulsed GS = 0, I D = 12.0 A pulsed (BR)DSS GS(th)1 GS(th)2 GS(th)3 I GSS1 I GSS ±100 ±200 na I DSS1 25 µa I DSS2 1.0 ma I DSS ma r DS(on)1 r DS(on)2 r DS(on)3 SD Ω Ω Ω T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 3 of 9

4 ,, and ELECTRICAL T A = +25 C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: On-State Gate Charge GS = 10, I D = 38.0 A, DS = 50 GS = 10, I D = 30.0 A, DS = 100 GS = 10, I D = 14.0 A, DS = 200 GS = 10, I D = 12.0 A, DS = 250 Gate to Source Charge GS = 10, I D = 38.0 A, DS = 50 GS = 10, I D = 30.0 A, DS = 100 GS = 10, I D = 14.0 A, DS = 200 GS = 10, I D = 12.0 A, DS = 250 Gate to Drain Charge GS = 10, I D = 38.0 A, DS = 50 GS = 10, I D = 30.0 A, DS = 100 GS = 10, I D = 14.0 A, DS = 200 GS = 10, I D = 12.0 A, DS = 250 Q g(on) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time I D = 38.0 A, GS = 10, R G = 2.35 Ω, DD = 50 I D = 30.0 A, GS = 10, R G = 2.35 Ω, DD = 100 I D = 14.0 A, GS = 10, R G = 2.35 Ω, DD = 200 I D = 12.0 A, GS = 10, R G = 2.35 Ω, DD = 250 Rise time I D = 38.0 A, GS = 10, R G = 2.35 Ω, DD = 50 I D = 30.0 A, GS = 10, R G = 2.35 Ω, DD = 100 I D = 14.0 A, GS = 10, R G = 2.35 Ω, DD = 200 I D = 12.0 A, GS = 10, R G = 2.35 Ω, DD = 250 Turn-off delay time I D = 38.0 A, GS = 10, R G = 2.35 Ω, DD = 50 I D = 30.0 A, GS = 10, R G = 2.35 Ω, DD = 100 I D = 14.0 A, GS = 10, R G = 2.35 Ω, DD = 200 I D = 12.0 A, GS = 10, R G = 2.35 Ω, DD = 250 Fall time I D = 38.0 A, GS = 10, R G = 2.35 Ω, DD = 50 I D = 30.0 A, GS = 10, R G = 2.35 Ω, DD = 100 I D = 14.0 A, GS = 10, R G = 2.35 Ω, DD = 200 I D = 12.0 A, GS = 10, R G = 2.35 Ω, DD = 250 Diode Reverse Recovery Time di/dt = 100 A/µs, DD 30, I D = 38.0 A di/dt = 100 A/µs, DD 30, I D = 30.0 A di/dt = 100 A/µs, DD 30, I D = 14.0 A di/dt = 100 A/µs, DD 30, I D = 12.0 A Q gs Q gd nc nc nc t d(on) 35 ns t r 190 ns t d(off) 170 ns t f 130 ns t rr ns T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 4 of 9

5 ,, and GRAPHS Thermal Response (ZθJC) t 1, Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Response Curves T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 5 of 9

6 ,, and GRAPHS (continued) FIGURE 2 Maximum Drain Current vs Case Temperature Graphs T C CASE TEMPERATURE (ºC) For T C CASE TEMPERATURE (ºC) For T C CASE TEMPERATURE (ºC) For T C CASE TEMPERATURE (ºC) For T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 6 of 9

7 ,, and GRAPHS (continued) FIGURE 3 Maximum Safe Operating Area DS, DRAIN-TO-SOURCE OLTAGE (OLTS) for ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) DS, DRAIN-TO-SOURCE OLTAGE (OLTS) for T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 7 of 9

8 ,, and GRAPHS (continued) DS, DRAIN-TO-SOURCE OLTAGE (OLTS) for DS, DRAIN-TO-SOURCE OLTAGE (OLTS) for T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 8 of 9

9 ,, and PACKAGE DIMENSIONS NOTE: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points.050 inch (1.27 mm) and.055 inch (1.40 mm) below the seating plane. When gauge is not used measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within.001 inch (0.03 mm) concave to.004 inch (0.10 mm) convex inside a.930 inch (23.62 mm) diameter circle on the center of the header and flat within.001 inch (0.03 mm) concave to.006 inch (0.15 mm) convex overall. 5. These dimensions pertain to the and types. 6. These dimensions pertain to the and types. 7. Mounting holes shall be deburred on the seating plane side. 8. Drain is electrically connected to the case. 9. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. DIM INCHES MILLIMETERS MIN MAX MIN MAX NOTES A B C D D (3) E DIA. (5) DIA. (6) F Radius G H J K L Radius M DIA. (7) SCHEMATIC T4-LDS-0101, Rev. 3 (121466) 2012 Microsemi Corporation Page 9 of 9