High Speed MOSFET Drivers
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1 High Speed MOSFET Drivers AS / AS9 FEATURES Latch Up Protected >.A Logic Input Swing Negative ESD k Matched Rise and Fall Times ns APPLICATIONS Motor Controls Switch-Mode Power Supplies Pulse Transformer Driver Class D Switching Amplifiers DESCRIPTION The AS and AS9 family operate over. to 8, can withstand high current peaking of 6A and have matched rise and fall times under ns. The product has been designed utilizing Calogic s rugged CMOS process with protection for latch up and ESD. The product is available in inverting (AS9) and noninverting (AS) configurations. ORDERING INFORMATION Part# Logic Package Temperature Range ASP Noninverting 8-Pin PDIP - C to +8 C o o ASS Noninverting AS9P Inverting AS9S Inverting 8-Pin SOIC - o C to +8 o C 8-Pin PDIP - o C to +8 o C 8-Pin SOIC - o C to +8 o C FUNCTIONAL DIAGRAM AND PIN CONFIGURATIONS DIP SOIC DD 8 DD D D 8 D D NC 7 6 NC 7 6 A-7 A-8 DD ì m.7 AS / AS9 EFFECTIE C = 8pF L- CALOGIC, 7 Whitney Place, Fremont, California 99, Telephone: -66-9, FAX: -6-76
2 AS / AS9 ABSOLUTE MAXIMUM RATINGS Supply oltage Static-sensitive device. Unused devices must be stored in Input oltage to >DD conductive material. Protect devices from static discharge Input Current (IN > DD) ma Power Dissipation, TA < o and static fields. Stresses above those listed under "Absolute C Maximum Ratings" may cause permanent damage to the PDIP W device. These are stress ratings only and functional operation SOIC mw of the device at these or any other conditions above those Derating Factors (To Ambient) PDIP mW/ o C indicated in the operation sections of the specifications is not SOIC mw/ o C implied. Exposure to absolute maximum rating conditions for Storage Temperature Range o C to + o C extended-periods may affect device reliability. Operating Temperature (Chip) o C Operating Temperature Range (Ambient) C ersion o C to +7 o C E ersion o C to +8 o C Lead Temperature (Soldering, sec) o C ELECTRICAL CHARACTERISTICS: TA = + o C with. < DD < 8, unless otherwise specified. SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONS IH IL IN (Max) Logic High Input oltage Logic Low Input oltage Input oltage Range DD+. IIN Input Current - A < IN < DD OH High Output oltage DD-. OL Low Output oltage RO Output Resistance, High RO Output Resistance, Low IPK Peak Output Current A See Figure See Figure IOUT = ma, DD = 8 IOUT = ma, DD = 8 DD = 8 (See Figure ) IRE Latch-Up Protection Withstand Reverse Current >. t A Duty Cycle < % < ìa SWITCHING TIME (Note ) tr Rise Time ns Figure, CL = pf tf Fall Time ns Figure, CL = pf td Delay Time ns Figure td Delay Time ns Figure POWER SUPPLY IS Power Supply Current DD Operating Input oltage. ma A. 8 IN = IN = CALOGIC, 7 Whitney Place, Fremont, California 99, Telephone: -66-9, FAX: -6-76
3 AS / AS9 ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with. ~ DD ~ 8, unless otherwise specified. SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONS IH Logic High Input oltage. IL Logic Low Input oltage.8 IN (Max) Input oltage Range - DD+. IIN Input Current - LA ~ IN ~ S OH High Output oltage DD-. See Figure OL Low Output oltage. See Figure RO Output Resistance, High IOUT = ma, DD = 8 RO Output Resistance, Low. SWITCHING TIME (Note ) Ω I O U T = ma, DD = 8 tr Rise Time 6 ns Figure, CL = pf tf Fall Time 6 ns Figure, CL = pf td Delay Time ns Figure td Delay Time ns Figure POWER SUPPLY IS Power Supply Current 6 ma L IN = IN = DD Operating Input oltage. 8 Note:. Switching times guaranteed by design. FIGURE. SWITCHING TIME TEST CIRCUIT DD = 8.LF + 9%.LF 8.LF. % t D t F t D t R % 9% 7 C L = pf % % : khz, SQUARE WAE, trise = t FALL~ ns A- A-9 CALOGIC, 7 Whitney Place, Fremont, California 99, Telephone: -66-9, FAX: -6-76
4 AS / AS9 TYPICAL CHARACTERISTICS CURES RISE TIME vs SUPPLY OLTAGE FALL TIME vs SUPPLY OLTAGE 8 C L =, pf 8 6 C L =, pf 6 C L = 7 pf C L = pf C L = 7 pf C L = pf 7 9 DD () L- 7 9 DD () L- RISE AND FALL TIMES vs TEMPERATURE CL = pf DD = 8 8 RISE TIME vs CAPACITIE LOAD 6 DD = t FAL t RISE DD = DD= T A ( C) L-6, CAPACITE LOAD (pf) L-7 FALL TIME vs CAPACITIE LOAD 6 PROPAGATION DELAY TIME vs SUPPLY OLTAGE DD = t D DD = DD = 8 t D, CAPACITE LOAD (pf) L-8 SUPPLY OLTAGE () A-6 CALOGIC, 7 Whitney Place, Fremont, California 99, Telephone: -66-9, FAX: -6-76
5 AS / AS9 TYPICAL CHARACTERISTICS CURES (Cont.) PROPAGATION DELAY TIME vs TEMPERATURE CL = pf 8 SUPPLY CURRENT vs CAPACITY LOAD DD = DD = 8 7 t D 6 t D 8 khz -6-6 T A ( C) A-7 khz khz, CAPACITIE LOAD (pf) A-8 SUPPLY CURRENT vs FREQUENCY CL = pf 8 6 THERMAL DERATING CURE 8 DIP 8 SOIC 8 CerDIP 8 6, FREQUENCY (khz) A AMBIENT TEMPERATURE ( C) L-9. LOW-STATE RESISTANCE HIGH-STATE RESISTANCE ma ma ma ma ma. ma DD () A- DD () A- CALOGIC, 7 Whitney Place, Fremont, California 99, Telephone: -66-9, FAX: -6-76
6 AS / AS9 TYPICAL CHARACTERISTICS CURES (Cont.) EFFECT OF AMPLITUDE ON PROPAGATION DELAY LOAD = pf TOTAL na S CROSSOER* AND DD () A SUPPLY OLTAGE () * The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by. A- IN DD DD OUT OUT DIE SIZE 76x77 (mm) CALOGIC, 7 Whitney Place, Fremont, California 99, Telephone: -66-9, FAX: -6-76
9A HIGH-SPEED MOSFET DRIVERS
9A HIGH-SPEED MOSFET DRIVERS 9A HIGH-SPEED MOSFET DRIVERS FEATURES Tough CMOS Construction High Peak Output Current.................. 9A High Continuous Output Current........ 2A Max Fast Rise and Fall
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