NTE4501 Integrated Circuit CMOS, Dual 4 Input NAND Gate, 2 Input NOR/OR Gate, 8 Input AND/NAND Gate
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1 NTE4501 Integrated Circuit CMOS, Dual 4 Input NAND Gate, 2 Input NOR/OR Gate, 8 Input AND/NAND Gate Description: The NTE4501 is a triple gate device in a 16 Lead DIP type package constructed with MOS P Channel and N Channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. Features: Quiescent Current = 0.5nA/package Typ at 5Vdc Noise Immunity = 45% of Typ Diode Protection on All Inputs Supply Voltage Range: 3Vdc to 18Vdc Single Supply Operation Positive or Negative High Fanout > 50 Logic Swing Independent of fanout Capable of Driving Two Low Power TTL Loads, One Low Power Schottky TTL Load or Two HTL Loads Over the Rated Temperature Range Absolute Maximum Ratings: (Voltages referenced to V SS, Note 1) DC Supply Voltage, to +18.0V Input Voltage (All Inputs), V in to to +0.5V DC Current Drain (Per Pin), I... 10mA Operating Temperature Range, T A to +125 C Storage Temperature Range, T stg to +150 C Note 1. Maximum Ratings are those values beyond which damage to the device may occur.
2 Electrical Characteristics: 55 C +25 C +125 C Symbol Vdc Min Max Min Typ Max Min Max Unit Output Voltage 0 Level V OL Vdc V in = or Vdc Vdc 1 Level V OH Vdc V in = 0 or Vdc Vdc Input Voltage (Note 2) 0 Level (V O = 3.6 or 1.4Vdc) V IL Vdc (V O = 7.2 or 2.8Vdc) Vdc (V O = 11.5 or 3.5Vdc) Vdc 1 Level (V O = 1.4 or 3.6Vdc) V IH Vdc (V O = 12.8 or 7.2Vdc) Vdc (V O = 3.5 or 11.5Vdc) Vdc Output Drive Current I OH (V OH = 2.5Vdc) Source madc (V OH = 4.6Vdc) madc (V OH = 9.5Vdc) NAND madc (V OH = 13.5Vdc) madc (V OH = 2.5Vdc) NOR madc (V OH = 4.6Vdc) madc (V OH = 9.5Vdc) madc (V OH = 13.5Vdc) madc (V OH = 2.5Vdc) NOR madc (V OH = 4.6Vdc) madc (V OH = 9.5Vdc) Inverter madc (V OH = 13.5Vdc) madc (V OL = 0.4Vdc) Sink I OL madc (V OL = 0.5Vdc) NAND madc (V OL = 1.5Vdc) madc (V OL = 0.4Vdc) NOR madc (V OL = 0.5Vdc) madc (V OL = 1.5Vdc) madc (V OL = 0.4Vdc) NOR madc (V OL = 0.5Vdc) Inverter madc (V OL = 1.5Vdc) madc Note 2. Noise immunity specified for worse case input combination. Note 4. To calculate total supply current at loads other than 50pF: I T (C L ) = I T (50pF) + 4 x 10 3 (C L 50) /f where: I T is in μa (per package), C L in pf, in Vdc, f in khz is input frequency.
3 Electrical Characteristics (Cont d): 55 C +25 C +125 C Symbol Vdc Min Max Min Typ Max Min Max Unit Input Current I in 15 ±0.1 ± ±0.1 ±0.1 μadc Input Capacitance (V IN = 0) C in pf Quiescent Current I DD μadc (Per Package) μadc Total Supply Current (Dynamic plus Quiescent, Per Package, C L = 50pF on all outputs, all buffers switching, Note 3, Note 4) μadc I T 5.0 I T = (1.2μA/kHz) f + I DD μadc 10 I T = (2.4μA/kHz) f + I DD μadc 15 I T = (3.6μA/kHz) f + I DD μadc Note 2. Noise immunity specified for worse case input combination. Note 4. To calculate total supply current at loads other than 50pF: I T (C L ) = I T (50pF) + 4 x 10 3 (C L 50) /f where: I T is in μa (per package), C L in pf, in Vdc, f in khz is input frequency. Switching Characteristics: (C L = 50pF, T A = +25 C, Note 2, Note 3) Symbol Vdc Min Typ Max Unit Output Rise Time NAND, NOR t TLH = (3.0ns/pf) C L + 30ns t TLH ns t TLH = (1.5ns/pf) C L + 15ns ns t TLH = (1.1ns/pf) C L + 10ns ns Output Fall Time NAND, NOR t THL = (1.5ns/pf) C L + 25ns t THL ns t THL = (0.75ns/pf) C L ns ns t THL = (0.55ns/pf) C L + 9.5ns ns Output Rise Time NOR Inverter t TLH = (1.35ns/pf) C L ns t TLH ns t TLH = (0.60ns/pf) C L + 20ns ns t TLH = (0.40ns/pf) C L + 17ns ns Output Fall Time NOR Inverter t THL = (0.67ns/pf) C L ns t THL ns t THL = (0.45ns/pf) C L ns ns t THL = (0.37ns/pf) C L ns ns Note 2. Data labeled Typ is not to be used for design purposes but is intended as an indication of the device s potential performance.
4 Switching Characteristics (Cont d): (C L = 50pF, T A = +25 C, Note 2, Note 3) Propagation Delay Time t PLH, t PHL = (1.7ns/pf) C L + 45ns Symbol Vdc Min Typ Max Unit t PLH. t PHL ns NAND t PLH, t PHL = (0.66ns/pf) C L + 37ns ns t PLH, t PHL = (0.5ns/pf) C L + 25ns ns ns ns t PLH, t PHL = (1.7ns/pf) C L + 30ns NOR t PLH. t PLH, t PHL = (0.66ns/pf) C L + 32ns t PHL ns t PLH, t PHL = (0.5ns/pf) C L + 20ns ns t PLH, t PHL = (1.7ns/pf) C L + 45ns NOR Inverter t PLH. t PLH, t PHL = (0.66ns/pf) C L + 37ns t PHL ns t PLH, t PHL = (0.5ns/pf) C L + 25ns ns Note 2. Data labeled Typ is not to be used for design purposes but is intended as an indication of the device s potential performance. Logic Diagram AND 15 NAND 10 = Pin16 V SS = Pin8 Use Dotted Connection Externally to Obtain 8 Input AND/NAND Note: Pin14 must not be used as an input to the inverter.
5 (22.0) Max.260 (6.6) Max.200 (5.08) Max.100 (2.54).099 (2.5) Min.700 (17.78)
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