DATA SHEET. BSD22 MOSFET N-channel depletion switching transistor DISCRETE SEMICONDUCTORS
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1 DISCRETE SEMICONDUCTORS DT SHEET MOSFET N-channel depletion switching transistor File under Discrete Semiconductors, SC07 December 1997
2 DESCRIPTION Marking code: M32 Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type.the transistor is sealed in a SOT143 envelope and features a low ON-resistance and low capacitances.the transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. pplications: analog and/or digital switch handbook, halfpage g d b s switch driver Top view MM389 convertor chopper PINNING 1 = substrate (b) 2 = source 3 = drain 4 = gate Fig.1 Simplified outline and symbol. Note 1. Drain and source are interchangeable QUICK REFERENCE DT Drain-source voltage V DS max. 20 V Gate-source voltage V GS max V 40 V Drain current (DC) I D max. 50 m Total power dissipation up to T amb =25 C P tot max. 230 mw Junction temperature T j max. 125 C Drain-source ON-resistance V GS = 10 V; V SB = 0; I D = 1 m R DSon max. 30 Feed-back capacitance V GS =V BS = 5 V; V DS = 10 V; f = 1 MHz C rss typ. 0.6 pf December
3 RTINGS Limiting values in accordance with the bsolute Maximum System (IEC 134) Drain-source voltage V DS max. 20 V Source-drain voltage V SD max. 20 V Drain-substrate voltage V DB max. 25 V Source-substrate voltage V SB max. 25 V Gate-substrate voltage V GB max. ± 15 V Gate-source voltage V GS max V 40 V Drain current (DC) I D max. 50 m Total power dissipation up to T amb =25 C (1) P tot max. 230 mw Storage temperature range T stg 65 to C Junction temperature T j max. 125 C THERML RESISTNCE From junction to ambient in free air (1) R th j-a = 430 K/W Note 1. Device mounted on a ceramic subtrate of 8 mm 10 mm 0.7 mm. CHRCTERISTICS T amb =25 C unless otherwise specified Drain-source breakdown voltage V GS =V BS = 5 V; I S = 10 n V (BR)DSX min. 20 V Source-drain breakdown voltage V GD =V BD = 5 V; I D = 10 n V (BR)SDX min. 20 V Drain-substrate breakdown voltage V GB = 0; I D = 10 n; open source V (BR)DBO min. 25 V Source-substrate breakdown voltage V GB = 0; I S = 10 n; open drain V (BR)SBO min. 25 V Drain-source leakage current V GS =V BS = 5 V; V DS = 10 V I DSoff typ. 1.0 n Source-drain leakage current V GD =V BD = 5 V; V SD = 10 V I SDoff typ. 1.0 n Gate-substrate leakage current V DB =V SB = 0; V GB = ± 15 V I GBS max. 10 n Forward transconductance at f = 1 khz V DS = 10 V; V SB = 0; I D = 20 m min. 10 ms g fs typ. 15 ms Gate-source cut-off voltage V DS = 10 V; V SB =0; I D =10µ V (P)GS max. 2.0 V December
4 Drain-source ON-resistance I D = 1 m; V SB =0; V GS =5 V R DSon typ. max V GS = 10 V R DSon typ. max Capacitances at f = 1 MHz V GS =V BS = 5 V; V DS = 10 V Feed-back capacitance C rss typ. 0.6 pf Input capacitance C iss typ. 1.5 pf Output capacitance C oss typ. 1.0 pf Switching times (see Fig.3) V DD = 10 V; V i = 5 V to + 5 V t on typ. 1.0 ns t off typ. 5.0 ns handbook, halfpage C gd C iss = C gs + C gd + C gb g C bd C bs d b s C oss = C gd + C bd C gb C rss = C gd C gs MBK301 Fig.2 Capacitances model. ge V DD handbook, full pagewidth µf V o INPUT 630 t r t f V i 50 T.U.T OUTPUT t on t off MBK300 MBK296 Fig.3 Switching times and input and output waveforms; R i =50; t r < 0.5 ns; t f < 1.0 ns; t p = 20 ns; δ < December
5 PCKGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E X y v M H E e b p w M B 4 3 Q c b 1 Lp e1 detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT mm max 0.1 b p b c D E e 1.9 e H E L p Q v 0.2 w y OUTLINE VERSION REFERENCES IEC JEDEC EIJ EUROPEN PROJECTION ISSUE DTE SOT143B December
6 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the bsolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. pplication information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT PPLICTIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On February the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT fieldeffect power transistor in a plastic envelope. BUK456 A B The device is intended for use in V DS
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
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