N-Channel Depletion-Mode DMOS FET

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1 Features Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low C ISS ESD gate protection Applications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Ordering Information Device N-Channel Depletion-Mode DMOS FET Package Options TO-AB (SOT-) TO-9 TO-AA (SOT-89) General Description LND The LND is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex s lateral DMOS technology. The gate is ESD protected. The LND is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. BV DSX /BV DGX (V) R DS(ON) (max) (KΩ) LND LNDK-G LNDN-G LNDN8-G.. -G indicates package is RoHS compliant ( Green ) I DSS (min) Pin Configurations Absolute Maximum Ratings Parameter Value Drain-to-source BV DSX Drain-to-gate BV DGX Gate-to-source ±V Operating and storage temperature - O C to + O C Soldering temperature* O C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of.mm from case for seconds. Product Marking NDEW W = Code for Week Sealed = Green Packaging TO-AB (SOT-) (K) SiLN D Y Y W W YY = Year Sealed WW = Week Sealed = Green Packaging TO-9 (N) TO-AB (SOT-) (K) Packages may or may not include the following marks: Si or DRAIN TO-9 (N) LNEW W = Code for Week Sealed = Green Packaging TO-AA (SOT-89) (N8) Bordeaux Drive, Sunnyvale, CA 989 Tel: GATE DRAIN GATE DRAIN GATE TO-AA (SOT-89) (N8)

2 LND Thermal Characteristics Package I D (continuous) Notes: I D (continuous) is limited by max rated T j. Mounted on FR board, mm x mm x.7mm I D (pulsed) Power A = O C (W) θ jc ( O C/W) θ ja ( O C/W) TO-AB (SOT-). TO TO-AA (SOT-89). 78 I DR I DRM Electrical Characteristics (T A = O C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BV DSX Drain-to-source breakdown voltage - - V V GS = -V, I D =.ma V GS(OFF) Gate-to-source off voltage V V GS = V, I D = na ΔV GS(OFF) Change in V GS(OFF) with temperature - -. mv/ O C V GS = V, I D = na I GSS Gate body leakage current - - na V GS = ± V, V DS = V I D(OFF) Drain-to-source leakage current - - na V GS = -V, V DS = V - - µa V DS =.8V Max Rating, V GS = -V, T A = O C I DSS Saturated drain-to-source current. -. ma V GS = V, V DS = V R DS(ON) Static drain-to-source on-state resistance - 8 Ω V GS = V, I D =.ma ΔR DS(ON) Change in R DS(ON) with temperature - -. %/ O C V GS = V, I D =.ma G FS Forward transductance - mmho V DS = V, I D =.ma C ISS Input capacitance - 7. C OSS Common source output capacitance -.. C RSS Reverse transfer capacitance -.. t d(on) Turn-on delay time t r Rise time -. - t d(off) Turn-off delay time -. - Notes:.. t f Fall time -. - pf µs V GS = -V, V DS = V, f =.MHz V DD = V, I D =.ma, R GEN = Ω V SD Diode forward voltage drop V V GS = -V, I SD =.ma t rr Reverse recovery time - - ns V GS = -V, I SD =.ma All D.C. parameters % tested at O C unless otherwise stated. (Pulse test: µs pulse, % duty cycle.) All A.C. parameters sample tested. Switching Waveforms and Test Circuit INPUT V -V % t (ON) 9% t (OFF) PULSE GENERATOR R GEN V DD R L OUTPUT t d(on) t r t d(off) t F OUTPUT V DD % % INPUT D.U.T. V 9% 9% Bordeaux Drive, Sunnyvale, CA 989 Tel:

3 LND Typical Performance Curves Output Characteristics Saturation Characteristics V GS =.V V GS =.V.V V.V V -.V -.V -.V -.V Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature G F S (millisiemens ) 8 V DS = V T A = - C T A = C T A = C P D (watts ) TO-AA TO-9 TO-AB 8 I D (milliamps) 7 T A ( C) Maximum Rated Safe Operating Area. Thermal Response Characteristics TO-9 (DC) T A = C TO-AA (DC) Resistance (normalized).8.. TO-AA T A = C P D =.W. Thermal. TO-9 P D = W T C = C.... t P (seconds) Bordeaux Drive, Sunnyvale, CA 989 Tel:

4 LND Typical Performance Curves (cont.) B V D S S (normalized ).. BV DSS Variation with Temperature V GS = -V... C.8.. I D vs. R I D C LND R.9. - T j ( C). K K R (ohms) K Transfer Characteristics V GS(OFF) and R DS Variation with Temperature.8 V DS = V T A = - C T A = C T A = C V G S(OFF ) (normalized )... R I D = ma....8 R D S(ON ) (normalized ). V na. - V GS (volts).8 - T j ( C) Capacitance vs. Drain-to-Source Voltage V GS = -V Gate Drive Dynamic Characteristics C ISS C (picofarads) V G S (volts ) 8.7pF V DS = V V V C OSS C RSS -... Q C (nanocoulombs) Bordeaux Drive, Sunnyvale, CA 989 Tel:

5 LND -Lead TO-AB (SOT-) Package Outline (K).9x.mm body,.mm height (max),.9mm pitch Top View View B View B Side View View A - A Dimension (mm) Symbol A A A b D E E e e L L θ MIN O.9.9. NOM BSC BSC REF MAX O JEDEC Registration TO-, Variation AB, Issue H, Jan This dimension is a non-jedec dimension. Drawings not to scale. Supertex Doc.#: DSPD-TOABK, Version B78. Bordeaux Drive, Sunnyvale, CA 989 Tel:

6 LND -Lead TO-9 Package Outline (N) D A Seating Plane L b e e Front View c Side View E E Bottom View Dimensions (inches) Symbol A b c D E E e e L MIN NOM MAX * JEDEC Registration TO-9. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-jedec dimension. Drawings not to scale. Supertex Doc.#: DSPD-TO9N, Version D88. Bordeaux Drive, Sunnyvale, CA 989 Tel:

7 LND -Lead TO-AA (SOT-89) Package Outline (N8) b b Dimensions (mm) Symbol A b b C D D E E e e H L MIN NOM BSC BSC - - MAX JEDEC Registration TO-, Variation AA, Issue C, July 98. Drawings not to scale. Supertex Doc. #: DSPD-TOAAN8, Version D798. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http// 9 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-LND A89 7 Bordeaux Drive, Sunnyvale, CA 989 Tel:

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