TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610

Transcription

1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : Yfs = 4.4 S (typ.) Low leakage current : IDSS = 100 µa (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 ma) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain source voltage V DSS 900 V Drain gate voltage (R GS = 20 kω) V DGR 900 V Gate source voltage V GSS ±30 V Drain current DC (Note 1) I D 5 A Pulse (Note 1) I DP 15 Drain power dissipation (Tc = 25 C) P D 150 W 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Single pulse avalanche energy (Note 2) E AS 595 mj Avalanche current I AR 5 A Repetitive avalanche energy (Note 3) E AR 15 mj JEDEC JEITA TOSHIBA SC C1B Channel temperature T ch 150 C Storage temperature range T stg 55~150 C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch c) C / W Thermal resistance, channel to ambient R th (ch a) 50 C / W Note 1: Ensure that the channel temperature does not exceed 150 C. Note 2: V DD = 90 V, T ch = 25 C (initial), L = 43.6 mh, I AR = 5 A, R G = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1

2 Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±30 V, V DS = 0 V ±10 µa Gate source breakdown voltage V (BR) GSS I G = ±10 µa, V DS = 0 V ±30 V Drain cut off current I DSS V DS = 720 V, V GS = 0 V 100 µa Drain source breakdown voltage V (BR) DSS I D = 10 ma, V GS = 0 V 900 V Gate threshold voltage V th V DS = 10 V, I D = 1 ma V Drain source ON resistance R DS (ON) V GS = 10 V, I D = 3.0 A Ω Forward transfer admittance Y fs V DS = 20 V, I D = 3.0 A S Input capacitance C iss 1200 Reverse transfer capacitance C rss V DS = 25 V, V GS = 0 V, f = 1 MHz 20 pf Output capacitance C oss 120 Rise time t r 40 Switching time Turn on time t on 90 Fall time t f 60 ns Turn off time t off 200 Total gate charge (gate source plus gate drain) Q g 45 Gate source charge Q gs V DD 400 V, V GS = 10 V, I D = 5 A 25 Gate drain ( miller ) Charge Q gd 20 nc Source Drain Ratings and Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) I DR 5 A I DRP 15 A Forward voltage (diode) V DSF I DR = 5 A, V GS = 0 V 1.9 V Reverse recovery time t rr I DR = 5 A, V GS = 0 V, di DR / dt = 100 A / µs 1300 ns Reverse recovery charge Q rr 11 µc Marking TOSHIBA K2610 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2

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5 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/rth (ch-c) R G = 25 Ω V DD = 90 V, L = 43.6 mh 1 BVDSS EAS = L I2 2 BVDSS VDD 5

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