IXBT22N300HV IXBH22N300HV

Transcription

1 High Voltag, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advanc Tchnical Information IXBTNHV IXBHNHV V CS = V = A V C(sat). TO-6HV (IXBT) Symbol Tst Conditions Maximum Ratings V CS = 5 C to 5 C V V CGR = 5 C to 5 C, R G = M V V GS Continuous ± V V GM Transint ± V 5 = 5 C 6 A = C A M = 5 C, ms 9 A SSOA V G = 5V, T VJ = 5 C, R G = 5 M = A (RBSOA) Clampd Inductiv Load V CS 5 V T SC V G = 5V, = 5 C, (SCSOA) R G = 5, V C = 5V, Non-Rptitiv μs P C = 5 C 9 W C M 5 C T stg C T L Maximum Lad Tmpratur for Soldring C T SOLD Plastic Body for s 6 C M d Mounting Torqu (TO-7HV)./ Nm/lb.in Wight TO-6HV g TO-7HV 6 g Faturs G High Voltag Packags High Blocking Voltag High Pak Currnt Capability Low Saturation Voltag TO-7HV (IXBH) G C C (Tab) C (Tab) G = Gat C = Collctor = mittr Tab = Collctor Symbol Tst Conditions Charactristic Valus ( = 5 C Unlss Othrwis Spcifid) Min. Typ. Max. BV CS = 5μA, V G = V V V G(th) = 5μA, V C = V G. 5. V S V C = V CS, V G = V 5 μa = 5 C.5 ma I GS V C = V, V G = ± V ± na V C(sat) = 5V, Not..7 V = 5 C.7 V Advantags Low Gat Driv Rquirmnt High Powr Dnsity Applications Switch-Mod and Rsonant-Mod Powr Supplis Unintrruptibl Powr Supplis (UPS) Lasr Gnrators Capacitor Discharg Circuits AC Switchs IXYS CORPORATION, All Rights Rsrvd DS69(6/)

2 Symbol Tst Conditions Charactristic Valus ( = 5 C Unlss Othrwis Spcifid) Min. Typ. Max. g fs = A, V C = V, Not S C is pf C os V C = 5V, V G = V, f = MHz 5 pf C rs pf Q g(on) nc Q g = 5V, V C = 5V nc Q gc 5 nc t d(on) 6 ns Rsistiv Switching Tims, T t J = 5 C r 6 ns I t C = 5V d(off) 5 ns V t C = 96V, R G = 5 f ns t d(on) ns Rsistiv Switching Tims, = 5 C t r 7 ns I t C = 5V d(off) ns V t C = 96V, R G = 5 f 65 ns R thjc. C/W R thcs TO-7HV. C/W TO-6HV Outlin L L IXBTNHV IXBHNHV L D L PINS: - Gat - mittr - Collctor A C A C A H D b D D Rvrs Diod Symbol Tst Conditions Charactristic Valus ( = 5 C Unlss Othrwis Spcifid) Min. Typ. Max TO-7HV Outlin R P A Q S A P V F I F = V, Not.7 V D D t rr I F = A, V G = V, -di F /dt = A/μs. μs I RM V R = V, V G = V A Q RM μc D L L A X A D X c b X PINS: - Gat - mittr, - Collctor b X Not:. Puls tst, t μs, duty cycl, d %. ADVANC TCHNICAL INFORMATION Th product prsntd hrin is undr dvlopmnt. Th Tchnical Spcifications offrd ar drivd from a subjctiv valuation of th dsign, basd upon prior knowldg and xprinc, and constitut a "considrd rflction" of th anticipatd rsult. IXYS rsrvs th right to chang limits, tst conditions, and dimnsions without notic. IXYS Rsrvs th Right to Chang Limits, Tst Conditions and Dimnsions. IXYS MOSFTs and IGBTs ar covrd,5,59,9, 5,9,96 5,7, 6,6,665 6,,65 B 6,6, 6,77,55 7,5,7 B 7,57,B by on or mor of th following U.S. patnts:,6,7 5,7,5 5,6,7 5,,5 6,59, B 6,5, 6,7,5 B 6,759,69 7,6,975 B,,6 5,,796 5,7,7 5,6,75 6,6,7 B 6,5,55 6,7,6 6,77,7 B 7,7,57

3 IXBTNHV IXBHNHV Fig.. Output = Fig.. xtndd Output = 6 6 V G = 5V 5V V 5 5 V G = 5V V 5V V V 5 5V Fig.. Output = V G = 5V 5V V V VC(sat) - Normalizd V G = 5V Fig.. Dpndnc of V C(sat) on Junction Tmpratur = A = A. = A 5V Dgrs Cntigrad 6 Fig. 5. Collctor-to-mittr Voltag vs. Gat-to-mittr Voltag 7 Fig. 6. Input Admittanc 5 = 6 5 VC - Volts = A A A = - ºC V G - Volts V G - Volts IXYS CORPORATION, All Rights Rsrvd

4 IXBTNHV IXBHNHV Fig. 7. Transconductanc Fig.. Gat Charg 6 = - ºC V C = 5V = A I G = ma g f s - Simns 6 VG - Volts Amprs Q G - NanoCoulombs Fig. 9. Forward Voltag Drop of Intrinsic Diod Fig.. Capacitanc 7, 6 T JJ = f = MHz IF - Amprs 5 V G = V Capacitanc - PicoFarads, C is C os V G = 5V C rs V F - Volts Fig.. Rvrs-Bias Saf Oprating Ara Fig.. Maximum Transint Thrmal Impdanc 6. 6 Z(th)JC - ºC / W. = R G = 5Ω dv / dt < V / ns Puls Width - Sconds IXYS Rsrvs th Right to Chang Limits, Tst Conditions and Dimnsions.

5 IXBTNHV IXBHNHV Fig.. Forward-Bias Saf Oprating = Fig.. Forward-Bias Saf Oprating = 75ºC V C(sat) Limit V C(sat) Limit 5µs µs ms 5µs µs ms.. = 5ºC = Singl Puls ms,, DC ms.. = 5ºC = 75ºC Singl Puls ms ms,, DC IXYS CORPORATION, All Rights Rsrvd IXYS RF: B_N(5P) ---A