N-Channel Enhancement-Mode Vertical DMOS FETs

Transcription

1 VN16 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds High input impedance and high gain Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex VN16 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Option TO-9 /BV DGS (V) R DS(ON) (max) (Ω) VN16 VN16N3-G 6. -G indicates package is RoHS compliant ( Green ) Absolute Maximum Ratings Parameter Drain-to-Source voltage Drain-to-Gate voltage Value BV DGS Gate-to-Source voltage ±V Operating and storage temperature Soldering temperature* -55 C to +15 C +3 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of mm from case for 1 seconds. Pin Configuration SOURCE Product Marking SiVN 1 6 Y Y W W DRAIN GATE TO-9 (N3) YY = Year Sealed WW = Week Sealed = Green Packaging Package may or may not include the following marks: Si or TO-9 (N3) 135 Bordeaux Drive, Sunnyvale, CA 989 Tel:

2 Thermal Characteristics Electrical Characteristics (T A = 5 C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions Drain-to-source breakdown voltage V = V, = 1.mA (th) Gate threshold voltage.8 -. V = V DS, = 1.mA Δ(th) Change in (th) with temperature mv/ O C = V DS, = 1.mA I GSS Gate body leakage current na = ±V, V DS = V SS Zero gate voltage drain current µa VN16 = V, V DS = Max Rating V DS =.8 Max Rating, = V, T A = 15 O C (ON) On-state drain current A = 1V, V DS = 5V R DS(ON) Static drain-to-source on-state resistance = 5.V, = 75mA Ω = 1V, = 5mA ΔR DS(ON) Change in R DS(ON) with temperature %/ O C = 1V, = 5mA G FS Forward transconductance 15 - mmho V DS = 5V, = 5mA C ISS Input capacitance C OSS Common source output capacitance C RSS Reverse transfer capacitance t d(on) Turn-on delay time t r Rise time t d(off) Turn-off delay time t f Fall time pf ns = V, V DS = 5V, f = 1.MHz = 5V, = 6mA, R GEN = 5Ω V SD Diode forward voltage drop V = V, I SD = 6mA Notes: 1.. Package (continuous) (ma) (pulsed) (A) Power C = 5 O C (W) θ jc ( O C/W) θ ja ( O C/W) TO Notes: (continuous) is limited by max rated T j. t rr Reverse recovery time - - ns = V, I SD = 6mA All D.C. parameters 1% tested at 5 O C unless otherwise stated. (Pulse test: 3µs pulse, % duty cycle.) All A.C. parameters sample tested. R (ma) RM (A) Switching Waveforms and Test Circuit INPUT 1V V 1% 9% PULSE GENERATOR R L OUTPUT t (ON) t (OFF) R GEN t d(on) t r t d(off) t F OUTPUT 1% 1% INPUT D.U.T. V 9% 9% 135 Bordeaux Drive, Sunnyvale, CA 989 Tel:

3 VN16 Typical Performance Curves. Output Characteristics. Saturation Characteristics = 1V = 1V.8 9V 8V 7V.8 9V 8V 7V V 5V V 3V V 5V V 3V.5 Transconductance vs. Drain Current. Power Dissipation vs. Case Temperature. V DS = 5V G F S (siemens ).3. T A = -55 C 5 C 15 C P D (watts ) 1. TO (amperes) T C ( C) 1 Maximum Rated Safe Operating Area 1. Thermal Response Characteristics 1..1 TO-9 (pulsed) TO-9 (DC) Resistance (normalized) T A = 5 C Thermal. TO-9 P D = 1W T A = 5 C t p (seconds) 135 Bordeaux Drive, Sunnyvale, CA 989 Tel:

4 VN16 Typical Performance Curves (cont.) 1.1 Variation with Temperature 1 On-Resistance vs. Drain Current 8 = 5V B V D S S (normalized ) 1. R D S(ON ) (ohms ) 6 = 1V T j ( C) (amperes). Transfer Characteristics (th) and R DS(ON) Variation with Temperature..8. V DS = 5V T A = -55 C 5 C 15 C V G S(th ) (normalized ) R 1V,.5A 1mA.8. R D S(ON ) (normalized ) (volts) T j ( C) 5 Capacitance vs. Drain-to-Source Voltage 1 Gate Drive Dynamic Characteristics f = 1MHz 8 V DS = 1V C (picofarads) 5 C ISS V G S (volts ) 6 9 pf C OSS C RSS pf V DS = V Q G (nanocoulombs) 135 Bordeaux Drive, Sunnyvale, CA 989 Tel:

5 VN16 3-Lead TO-9 Package Outline (N3) D A Seating Plane 1 3 L b e1 e Front View c Side View E1 1 3 E Bottom View Dimensions (inches) Symbol A b c D E E1 e e1 L MIN NOM MAX * JEDEC Registration TO-9. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-jedec dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO9N3, Version D88. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http// 8 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN16 A Bordeaux Drive, Sunnyvale, CA 989 Tel: