Asymmetric Gate turn-off Thyristor 5SGA 15F2502

Transcription

1 V DRM = 2500 V I GQM = 1500 A I SM = A V 0 = 1.45 V r = 0.90 mw V Dclink = 1400 V Asymmetric Gate turn-off hyristor 5SGA 15F2502 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Doc. No. 5SYA Oct. 06 Blocking Repetitive peak off-state voltage Repetitive peak reverse voltage Permanent DC voltage for 100 FI failure rate V DRM V GR 2 V 2500 V V RRM 17 V V DC-link Ambient cosmic radiation at sea level in open air V Repetitive peak off-state Repetitive peak reverse I DRM V D = V DRM, V GR 2 V 100 ma I RRM V R = V RRM, R GK = Ω 50 ma Mechanical data Mounting force F m kn Pole-piece diameter D p ± 0.1 mm 47 mm Housing thickness H mm Weight m 0.6 kg Surface creepage distance D s Anode to Gate 25 mm Air strike distance D a Anode to Gate 15 mm Note 1 Maximum rated values indicate limits beyond which damage to the device may occur

2 GO Data 5SGA 15F2502 On-state Max. average on-state I (AV)M Half sine wave, C = 85 C 570 A Max. RMS on-state I (RMS) 900 A Max. peak non-repetitive surge Limiting load integral Max. peak non-repetitive surge I SM t p = 10 ms, vj = 125 C, sine wave A After Surge: V D = V R = 0 V I 2 t A 2 s I SM t p = 1 ms, vj = 125 C, sine wave A After Surge: V D = V R = 0 V Limiting load integral I 2 t A 2 s On-state voltage V I = 1500 A, vj = 125 C 2.8 V hreshold voltage V (0) vj = 125 C 1.45 V Slope resistance I = A 0.90 mω r Holding I H vj = 25 C 50 A urn-on switching Critical rate of rise of onstate Critical rate of rise of onstate di /dt cr di /dt cr vj = 125 C, I = 1500 A, I GM = 30 A, di G /dt = 20 A/µs f = 200 Hz f = 1 Hz 400 A/µs 600 A/µs Min. on-time t on V D = 0.5 V DRM, vj = 125 C 80 µs I = 1500 A, di/dt = 100 A/µs, I GM = 30 A, di G /dt = 20 A/µs, C S = 3 µf, R S = 5 Ω urn-on delay time t d V D = 0.5 V DRM, vj = 125 C 2 µs Rise time t I = 1500 A, di/dt = 100 A/µs, r 4 µs I GM = 30 A, di G /dt = 20 A/µs, urn-on energy per pulse E on C S = 3 µf, R S = 5 Ω 0.5 J urn-off switching Max. controllable turn-off I GQM V DM V DRM, di GQ /dt = 30 A/µs, C S = 3 µf, L S 0.3 µh 1500 A Min. off-time t off V D = 0.5 V DRM, vj = 125 C 80 µs V DM V DRM, di GQ /dt = 30 A/µs, I GQ = I GQM, R S = 5 Ω, C S = 3 µf, L S = 0.3 µh Storage time t S V D = 0.5 V DRM, vj = 125 C 15 µs Fall time t V DM V DRM, di GQ /dt = 30 A/µs, f 2 µs I GQ = I GQM, urn-on energy per pulse E off R 2 J S = 5 Ω, C S = 3 µf, L S = 0.3 µh Peak turn-off gate 480 A I GQM Doc. No. 5SYA Oct. 06 page 2 of 9

3 Gate Repetitive peak reverse voltage V GRM 17 V Repetitive peak reverse I GRM 20 ma V GR = V GRM Gate trigger voltage V G vj = 25 C, 1.5 V Gate trigger V D = 24 V, R A = 0.1 Ω 1.5 A I G hermal Junction operating temperature vj C Storage temperature range stg C hermal resistance junction to case hermal resistance case to heatsink (Double side cooled) Analytical function for transient thermal impedance: R th(j-c) Double side cooled 27 K/kW R th(j-c)a Anode side cooled 49 K/kW R th(j-c)c Cathode side cooled 60 K/kW R th(c-h) Single side cooled 16 K/kW R th(c-h) Double side cooled 8 K/kW Z th(j - c) (t) = n i= 1 R(1- i e -t/ τ i ) i R i (K/kW) τ i (s) Fig. 1 ransient thermal impedance, junction to case Doc. No. 5SYA Oct. 06 page 3 of 9

4 Max. on-state characteristic model: V 25 = A + B I + C ln( I + 1) + D Valid for i = A I Max. on-state characteristic model: V 125 = A + B I + C ln( I + 1) + D Valid for i = A I A 25 B 25 C 25 D 25 A 125 B 125 C 125 D Fig. 2 On-state characteristics Fig. 3 Surge and fusing integral vs. pulse width Fig. 4 Forward blocking voltage vs. gate-cathode resistance Doc. No. 5SYA Oct. 06 page 4 of 9

5 Fig. 5 Static dv/dt capability; forward blocking voltage vs. neg. gate voltage or gate cathode resistance Fig. 6 Forward gate vs. forward gate voltage Fig. 7 Gate trigger vs. junction temperature Doc. No. 5SYA Oct. 06 page 5 of 9

6 Fig. 8 urn-on energy per pulse vs. on-state and turn-on voltage Fig. 9 urn-on energy per pulse vs. on-state and rise rate Common est conditions: di G /dt = 20 A/µs C S = 3 µf R S = 5 Ω j = 125 C Definition of urn-on energy: E on 20 µ s = V 0 D Idt Definition of urn-off energy: (t = 0, IG = 0.1 I GM ) E off 40 µ s = V 0 D Idt ( t = 0, I = 0.9 I GQ ) Fig. 10 urn-on energy per pulse vs. on-state and turn-on voltage Doc. No. 5SYA Oct. 06 page 6 of 9

7 Fig. 11 urn-off energy per pulse vs. turn-off and peak turn-off voltage, extracted gate charge vs. turn-off Fig. 12 urn-off energy per pulse vs. turn-off and snubber capacitance Fig. 13 Required snubber capacitor vs. max allowable turn-off Fig. 14 urn-off energy per pulse, storage time and peak turn-off gate vs. junction temperature Fig. 15 Storage time and peak turn-off gate vs. neg. gate rise rate Fig. 16 Storage time and peak turn-off gate vs. neg. gate rise rate Doc. No. 5SYA Oct. 06 page 7 of 9

8 Fig. 17 General and voltage waveforms with GO-specific symbols Fig. 18 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Doc. No. 5SYA Oct. 06 page 8 of 9

9 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GO reverse voltage V R may exceed the rate value V RRM due to stray inductance and diode turn-on voltage spike at high di/dt. he GO is then driven into reverse avalanche. his condition is not dangerous for the GO provided avalanche time and are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : V GR = V. Related documents: 5SYA SYA SZK SZK 9105 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Cosmic Ray Specification of enviromental class for pressure contact GO, SORAGE available on request, please contact factory Specification of enviromental class for pressure contact GO, RANSPORAION available on request, please contact factory Please refer to for version of documents. ABB Switzerland Ltd Doc. No. 5SYA Oct. 06 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet