ABB HiPak. IGBT Module 5SNE 0800G VCE = 4500 V IC = 800 A

Transcription

1 VCE = 45 V IC = 8 A ABB HiPak IGBT Module 5SNE 8G453 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Improved high reliability package Recognized under UL557, File E96689 Doc. No. 5SYA Maximum rated values ) Parameter Symbol Conditio min max Unit Collector-emitter voltage VCES VGE = V 45 V DC collector current IC Tc = 85 C 8 A Peak collector current ICM tp = ms, Tc = 85 C 6 A Gate-emitter voltage VGES -2 2 V Total power dissipation Ptot Tc = 25 C, per switch (IGBT) 72 W DC forward current IF 8 A Peak forward current IFRM 6 A Surge current I FSM V R = V,, t p = ms, half-sinewave IGBT short circuit SOA t psc V CC = 34 V, V CEM CHIP 45 V VGE 5 V, Tvj 25 C 6 A µs Isolation voltage Visol min, f = 5 Hz 2 V Junction temperature Tvj 5 C Junction operating temperature Tvj(op) C Case temperature Tc C Storage temperature Tstg C Mounting torques 2) M t Main terminals, M8 screws 8 M s Base-heatsink, M6 screws 4 6 M t2 Auxiliary terminals, M4 screws 2 3 ) Maximum rated values indicate limits beyond which damage to the device may occur per IEC ) For detailed mounting itructio refer to ABB Document No. 5SYA239 Nm

2 5SNE 8G453 IGBT characteristic values 3) Parameter Symbol Conditio min typ max Unit Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage V (BR)CES V GE = V, I C = ma, 45 V VCE sat IC = 8 A, VGE = 5 V Collector cut-off current ICES VCE = 45 V, VGE = V Tvj = 25 C V Tvj = 25 C V Tvj = 25 C 8 ma Tvj = 25 C 8 ma Gate leakage current IGES VCE = V, VGE = 2 V, Tvj = 25 C -5 5 na Gate-emitter threshold voltage V GE(TO) I C = 6 ma, V CE = V GE, V Gate charge Q ge IC = 8 A, VCE = 28 V, V GE = -5 V.. 5 V Input capacitance C ies 8 Output capacitance C oes V CE = 25 V, V GE = V, f = MHz, 4. Reverse trafer capacitance C res µc Internal gate resistance R Gint.75 Ω VCC = 28 V, 87 Turn-on delay time t d(on) I C = 8 A, 86 R G = 2.2 W, C GE = 5 nf, V GE = 5 V, 5 Rise time t r L s = 5 nh, inductive load 7 V CC = 28 V, 27 Turn-off delay time t d(off) IC = 8 A, 222 R G = 2.2 W, C GE = 5 nf, V GE = 5 V, 5 Fall time t f L s = 5 nh, inductive load 6 Turn-on switching energy Turn-off switching energy E on E off V CC = 28 V, IC = 8 A, R G = 2.2 W, C GE = 5 nf, V GE = 5 V, L s = 5 nh, inductive load V CC = 28 V, I C = 8 A, R G = 2.2 W, C GE = 5 nf, V GE = 5 V, L s = 5 nh, inductive load Short circuit current I SC t psc μs, V GE = 5 V,, V CC = 34 V, V CEM CHIP 45 V nf mj mj 35 A Module stray inductance Ls CE 27 nh Resistance, terminal-chip RCC +EE 3) Characteristic values according to IEC ) Collector-emitter saturation voltage is given at chip level T C = 25 C. TC = 25 C.5 mω Doc. No. 5SYA SYA42-3 Feb 6 page 2 of 9

3 5SNE 8G453 Diode characteristic values 5) Parameter Symbol Conditio min typ max Unit Forward voltage 6) V F I F = 8 A Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy I rr Q rr t rr E rec I F = 8 A, R G = 2.2 W, inductive load V CC = 28 V, V GE = 5 V, C GE = 5 nf, L s = 5 nh 65 5) Characteristic values according to IEC ) Forward voltage is given at chip level V A µc mj Package properties 7) Parameter Symbol Conditio min typ max Unit IGBT thermal resistance junction to case Diode thermal resistance junction to case Rth(j-c)IGBT.4 K/W R th(j-c)diode.28 K/W IGBT thermal resistance 2) case to heatsink R th(c-s)igbt IGBT per switch, l grease = W/m x K.3 K/W Diode thermal resistance 7) case to heatsink Partial discharge extinction voltage Rth(c-s)DIODE Diode per switch, l grease = W/m x K.27 K/W V e f = 5 Hz, QPD pc (acc. to IEC 6287) 5 V Comparative tracking index CTI 6 2) For detailed mounting itructio refer to ABB Document No. 5SYA239 Mechanical properties 7) Parameter Symbol Conditio min typ max Unit Dimeio L x W x H Typical, see outline drawing 3 x 4 x 48 mm Clearance distance in air d a according to IEC and EN 524- Surface creepage distance d s according to IEC and EN 524- Term. to base: 4 Term. to term: 26 Term. to base: 64 Term. to term: 56 Mass m g 7) Package and mechanical properties according to IEC mm mm Doc. No. 5SYA page 3 of 9

4 5SNE 8G453 Electrical configuration Outline drawing 2) Note: all dimeio are shown in mm 2) For detailed mounting itructio refer to ABB Document No. 5SYA239 This is an electrostatic seitive device, please observe the international standard IEC 6747-, chap. IX. This product has been designed and qualified for Industrial Level. Doc. No. 5SYA SYA42-3 Feb 6 page 4 of 9

5 5SNE 8G V CE = 2 V 2 25 C 2 IC [A] C IC [A] C C 2 2 V GE = 5V V CE [V] V GE [V] Fig. Typical on-state characteristics, chip level Fig. 2 Typical trafer characteristics, chip level 6 7 V 6 7 V 4 5 V 4 5 V 2 3 V 2 3 V V V IC [A] 8 IC [A] V 4 9 V V CEsat [V] V CEsat [V] Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level Doc. No. 5SYA page 5 of 9

6 5SNE 8G V CC = 28 V V GE = ±5 V R G = 2.2 ohm C GE = 5 nf L s = 5 nh E off E on Eon, Eoff [J] 4 E on Eon, Eoff [J] 4 E off 3 2 E sw [J] = 3.9 x -6 x I C x -3 x I C V CC = 28 V I C = 8 A V GE = ±5 V C GE = 5 nf L s = 5 nh I C [A] R G [ohm] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor t d(off) t d(off) t d(on) td(on), tr, td(off), tf [µs].. t f t d(on) t r V CC = 28 V V GE = ±5 V R G = 2.2 ohm C GE = 5 nf L s = 5 nh td(on), tr, td(off), tf [µs] t f t r V CC = 28 V I C = 8 A V GE = ±5 V C GE = 5 nf L s = 5 nh I C [A] R G [ohm] Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor Doc. No. 5SYA SYA42-3 Feb 6 page 6 of 9

7 5SNE 8G453 2 V GE = V f OSC = MHz V OSC = 5 mv 5 V CC = 28 V C ies V CC = 36 V C [nf] VGE [V] C oes 5 C res V CE [V] Q g [µc] I C = 8 A Fig. 9 Typical capacitances vs collector-emitter voltage Fig. Typical gate charge characteristics 2.5 V CC 34 V,, V GE = ±5 V R G = 2.2 ohm, C GE = 5 nf, L s 5 nh 2.5 ICpulse / IC.5 Chip Module V CE [V] Fig. Turn-off safe operating area (RBSOA) Doc. No. 5SYA page 7 of 9

8 5SNE 8G453 Erec [mj], Irr [A], Qrr [µc] V CC = 28 V V GE = ±5 V R G = 2.2 ohm C GE = 5 nf L s = 5 nh Erec [mj] = -7 x -4 x IF x IF E rec Q rr I rr Erec [mj], Irr [A], Qrr [µc] V CC = 28 V I F = 8 A V GE = ±5 V C GE = 5 nf L s = 5 nh RG = ohm RG = 6.8 ohm RG = 4.7 ohm RG = 3.3 ohm E rec Q rr RG = 2.2 ohm RG =.5 ohm I rr RG = ohm I F [A] di/dt [A/µs] Fig. 2 Typical reverse recovery characteristics vs forward current Fig. 3 Typical reverse recovery characteristics vs di/dt C V CC 34 V di/dt 44 A/µs L σ 5 nh IF [A] 8 25 C I R [A] V F [V] V R [V] Fig. 4 Typical diode forward characteristics, chip level Fig. 5 Safe operating area diode (SOA) Doc. No. 5SYA SYA42-3 Feb 6 page 8 of 9

9 5SNE 8G453 Zth(j-c) [K/W] IGBT, DIODE... Z th(j-c) Diode Z th(j-c) IGBT IGBT Analytical function for traient thermal impedance: Z th (j-c) (t) = n i= R i (- e -t/ t i i R i(k/kw) t i(ms) ) DIODE R i(k/kw) t i(ms) t [s] Fig. 6 Thermal impedance vs time Related documents: 5SYA 242 Failure rates of HiPak modules due to cosmic rays 5SYA 243 Load cycle capability of HiPaks 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 258 Surge currents for IGBT diodes 5SYA 293 Thermal design of IGBT modules 5SYA 298 Paralleling of IGBT modules 5SZK 9 Specification of environmental class for HiPak Storage 5SZK 92 Specification of environmental class for HiPak Traportation 5SZK 93 Specification of environmental class for HiPak Operation (Industry) 5SZK 92 Specification of environmental class for HiPak We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written coent is forbidden. Any liability for use of our products contrary to the itructio in this document is excluded. ABB Switzerland Ltd Doc. No. 5SYA Semiconductors Fabrikstrasse 3 CH-56 Lenzburg, Switzerland Telephone +4 () Fax +4 () abbsem@ch.abb.com Internet