ST733C..L SERIES 940A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25188 rev. A 04/00. case style TO-200AC (B-PUK)
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1 ST733C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 940A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-AC (B-PUK) Major Ratings and Characteristics Parameters ST733C..L Units I T(AV) 940 T hs 55 C I T(RMS) 1900 T hs 25 C I Hz 0 60Hz 209 A I 2 Hz KA2 60Hz 1820 KA 2 s V DRM /V RRM to 800 V t q range 10 to 20 µs T J - 40 to 125 C 1
2 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum V RSM, maximum I DRM /I RRM Type number Code repetitive peak voltage non-repetitive peak T J V V ma 04 0 ST733C..L Current Carrying Capability Frequency I TM I TM I TM Units 180 o el 180 o el µs Hz Hz Hz A Hz Recovery voltage Vr Voltage before turn-on Vd V DRM V DRM V DRM V Rise of on-state current di/dt A/µs Heatsink temperature C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction I T(AV) Max. average on-state current 940 (3) A conduction, half sine Heatsink temperature 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 0 t = 10ms No voltage non-repetitive surge current 209 A t = 8.3ms reapplied t = 10ms % V RRM t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing t = 10ms No voltage Initial T J max 1820 t = 8.3ms reapplied 1410 KA 2 s t = 10ms % V RRM 1290 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 0 KA 2 s t = 0.1 to 10ms, no voltage reapplied 2
3 On-state Conduction V TM Max. peak on-state voltage 1.63 I TM = 1700A, T J max, t p = 10ms sine wave pulse V T(TO)1 Low level value of threshold 1.09 (16.7% x π x I voltage T(AV) < I < π x I T(AV) ), T J V V T(TO)2 High level value of threshold 1.20 (I > π x I voltage T(AV) ), T J r Low level value of forward t (16.7% x π x I slope resistance T(AV) < I < π x I T(AV) ), T J mω r t2 High level value of forward 0.29 (I > π x I slope resistance T(AV) ), T J I H Maximum holding current 600 T J = 25 C, I T > 30A ma I L Typical latching current 0 T J = 25 C, V A = 12V, Ra = 6Ω, I G = 1A Switching di/dt Max. non-repetitive rate of rise T J max, V DRM = rated V DRM, I TM = 2 x di/dt 0 A/µs of turned-on current Gate pulse: 20V 20Ω, 10µs 0.5µs rise time T J = 25 C, V DM = rated V DRM, I TM = A DC, t p = 1µs t Typical delay time 1.5 d Resistive load, Gate pulse: 10V, 5Ω source µs Min Max T J max, I TM = 5A, commutating di/dt = -40A/µs t Max. turn-off time q V R = V, t p = 0µs, dv/dt: see table in device code Blocking dv/dt Maximum critical rate of rise of T J linear to 80% V DRM, higher value 0 V/µs off-state voltage available on request I RRM Max. peak reverse and off-state 75 ma T I DRM leakage current J max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power 60 P G(AV) Maximum average gate power 10 W T J, f = Hz, d% = I GM Max. peak positive gate current 10 A T J max, t p 5ms +V GM Maximum peak positive gate voltage 20 -V GM V T J max, t p 5ms Maximum peak negative 5 gate voltage I GT Max. DC gate current required to trigger I GD Max. DC gate current not to trigger ma 20 ma V GT Max. DC gate voltage required to trigger V GD 3 Max. DC gate voltage not to trigger V 0.25 V T J = 25 C, V A = 12V, Ra = 6Ω T J max, rated V DRM applied 3
4 Thermal and Mechanical Specification T J Max. operating temperature range -40 to 125 T stg Max. storage temperature range -40 to 1 C R thj-hs Max. thermal resistance, DC operation single side cooled K/W junction to heatsink DC operation double side cooled R thc-hs Max. thermal resistance, K/W DC operation single side cooled case to heatsink DC operation double side cooled F Mounting force, ± 10% N () (Kg) wt Approximate weight 255 g Case style TO - AC (B-PUK) See Outline Table R thj-hs Conduction (The following table shows the increment of thermal resistence R thj-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side K/W T J Ordering Information Table Device Code ST 73 3 C 08 L H K Thyristor 2 - Essential part number 3-3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - L = Puk Case TO-AC (B-PUK) 7 - Reapplied dv/dt code (for t q test condition) 8 -t q code 9-0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 0V/µsec (Standard value) L = 0V/µsec (Special selection) dv/dt - t q combinations available dv/dt (V/µs) CN DN EN CM DM EM FM * -- t q (µs) 15 CL DL EL FL * HL 18 CP DP EP FP HP 20 CK DK EK FK H * Standard part number. All other types available only on request. 4
5 Outline Table 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. TWO PLACES 27 (1.06) MAX. PIN RECEPTACLE AMP (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN (2.3 ) D IA. M A X. 4.7 (0.18) 20 ± 5 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE (1.430) MIN. STRIKE DISTANCE (0.686) MIN (1.44) Case Style TO-AC (B-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) M aximum Allow able Heatsink Tem perature ( C) 130 ST 733C..L Series 120 (Single Side Cooled) 110 R thj-hs (DC ) = K/W 90 Cond uction Angle Maximum Allow able Heatsink Temperature ( C ) (Single Side C ooled) 110 R thj-hs (DC ) = K/W Conduction Period DC Average On-state Current (A) A verag e O n-state C urrent (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5
6 Maximum Allowable Heatsink Temperature ( C ) ST7 33C..L Se rie s (Double Side Cooled) 110 R thj-h s (DC ) = K/W Conduction Angle M axim um Allow able Heatsink Tem perature ( C ) (Double Side C ooled) 110 R thj-hs (D C ) = K/W Conduction Period DC Av erag e O n-state C urre nt (A ) Fig. 3 - Current Ratings Characteristics Average On-state Current (A) Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 0 RMS Limit Conduction Angle 0 T J = 125 C Maxim um Average O n-state Power Loss (W ) 0 0 RM S Lim it Conduction Angle T = 125 C J Average On-state Current (A) Av erag e O n-state C urre nt (A ) Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V Applie d Following Surge. RRM Initial T J = Hz Hz 0.0 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6 Peak Half Sine W ave On -state C u rrent (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of C o nd uc tion M a y No t Be Ma intaine d. Initial T J = 125 C No Voltag e Rea pplie d Rated V Reapplie d RRM P ulse Tra in D ura tio n ( s)
7 Instantaneous On-state Current (A) 00 0 T J = 25 C T J = 125 C Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transie nt Th erm al Im pedanc e Z (K/W ) th J -hs Steady State V alue R thj-hs = K/W (Single Side Cooled) R thj-hs = K/W (D ouble Side C ooled) (D C O p era t io n ) Square Wave Pulse Duration (s) Fig Thermal Impedance Z thjc Characteristic M axim um Rev erse Rec ove ry C harg e - Q rr (µc) ST7 33C..L Se rie s T = 125 C J I TM = A 0 A 0 A Rate O f Fall Of O n-state C urren t - di/dt (A/µs) M axim um Reve rse Rec o very C urrent - Irr (A ) 2 1 I TM = A 0 A 0 A T = 125 C J Rate Of Fall Of Forward Current - di/dt (A/µs) Fig Reverse Recovered Charge Characteristics Fig Reverse Recovery Current Characteristics Pe ak O n -state C urre nt (A ) 1E5 1E4 1E Snubber circuit R s = 10 ohm s C s = 0.47 µ F V D = 80% VDRM Hz Sinusoidal pulse T = 40 C C 0 00 Snubber circuit R s = 10 ohm s V D = 80% VDRM Hz Sinuso idal pulse T = 55 C C 1E2 1E1 1E2 1E3 1E4 1E41E1 1E1 1E2 1E3 1E4 Pulse Base w idth (µs) Pulse Basew idth (µs) Fig Frequency Characteristics 7
8 1E 5 S nubbe r circuit R s = 10 o hms V D = 80% V DR M S T 733C..L S eries T rape zoidal puls e T C = 4 0 C di/dt = A/µs S nubber circuit R s = 10 ohms V D = 80% V DR M S T 733C..L S eries T rapezoidal pulse T C = 55 C di/ dt = A/µs 1E 4 1E Hz 0 0 Hz 1E 2 1E 1 1E 2 1E 3 1E 1E 4 41E1E1 1 1E 2 1E 3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig Frequency Characteristics 1E 5 S nubbe r circuit R s = 10 o hms V D = 80% V DRM S T 733C..L S eries T rape zoidal puls e T C = 4 0 C di/dt = A/µs S nubber circuit R s = 10 ohms V D = 80% V DR M S T 733C..L S eries T rapezoidal pulse T C = 55 C di/dt = A/µs 1E 4 H z H z E E 2 1E 1 1E 2 1E 3 1E 1E 4 41E1E1 1 1E 2 1E 3 1E 4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig Frequency Characteristics Peak On -state C urrent (A) 1E5 1E4 1E3 1E2 ST733C..L Serie s Sinusoidal pulse joules per pulse 10 ST733C..L Serie s Rectangular pulse di/dt = A/µs jo ule s p er pu lse E1 1E1 1E2 1E 3 1E4 1E41E1 1E1 1E2 1E3 1E4 Pulse Base w idth (µs) Pulse Base w idth (µs) Fig Maximum On-state Energy Power Loss Characteristics 8
9 10 R ectangular gate puls e a) Recommended load line for rated di/dt : 20V, 10ohms ; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (a) (1) P GM = 10W, = 20ms (2) P GM = 20W, = 10ms (3) P GM = 40W, = 5ms (4) P GM = 60W, = 3.3ms (b ) 1 (1) (2) (3) (4) VGD IGD Device: Frequency Limited by PG(AV) Ins tantaneous Gate Current (A) Fig Gate Characteristics 9
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