30 to 35 ma G. Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 80 C 20 A I T(AV)

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1 Sxx20x & Sxx25x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes of current at less than 1.5V potential. Features & Benefits RoHS compliant Glass passivated junctions Voltage capability up to 0 V Surge capability up to 350 gency pproval gency Main Features gency File Number L Package: E71639 pplications Typical applications are C solid-state switches, industrial power tools, exercise equipment, white goods and commercial appliances. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. Schematic Symbol Symbol Value Unit I T(RMS) 20 & 25 RM /V RRM 400 to 0 V K I GT 30 to 35 m G dditional Information Datasheet Resources Samples bsolute Maximum Ratings 20 SCR Symbol Parameter Test Conditions Value Unit I T(RMS) RMS on-state current T C = 80 C 20 I T(V) verage on-state current Sxx20x & T C = 80 C 12.8 I TSM Peak non-repetitive surge current single half cycle; f = 50Hz; (initial) = 25 C single half cycle; f = 60Hz; (initial) = 25 C I 2 t I 2 t Value for fusing t p = 8.3 ms s di/dt Critical rate of rise of on-state current f = 60Hz ; = C /μs I GM Peak gate current = C 3 P G(V) verage gate power dissipation = C 0.6 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to C

2 bsolute Maximum Ratings 25 SCR Symbol Parameter Test Conditions Value Unit I T(RMS) I T(V) I TSM RMS on-state current verage on-state current Peak non-repetitive surge current : T C =75 C /: T C = C T C = 75 C / T C = C single half cycle; f = 50Hz; (initial) = 25 C single half cycle; f = 60Hz; (initial) = 25 C I 2 t I 2 t Value for fusing t p = 8.3 ms 5 2 s di/dt Critical rate of rise of on-state current f = 60Hz ; = C 150 /μs I GM Peak gate current = C 3.5 P G(V) verage gate power dissipation = C 0.8 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to C Electrical Characteristics ( = 25 C, unless otherwise specified) Value Symbol Test Conditions Sxx25x Unit I GT = 12V R L = 30 Ω MX MIN. 1 1 V GT = 12V R L = 30 Ω MX. 1.5 V dv/dt = RM ; gate open; = C = RM ; gate open; = C 400V V V 400 0V MIN V V V 300 V GD = RM R L = 3.3 kω = C MIN. 0.2 V I H I T = 400m (initial) MX m t q (1) MX. 35 μs t gt I G = 2 x I GT PW = 15µs I T = 40 TYP. 2 μs Note: xx = voltage, x = package (1) I T =2; t p =50μs; dv/dt=5v/μs; di/dt=-30/μs m V/μs

3 Static Characteristics Symbol Test Conditions Value Unit V TM 20 Device I T = 40; t p = 380μs 25 Device I T = 50; t p = 380μs MX. 1.6 V = 25 C V 800 0V V 500 I DRM / I RRM RM / V RRM = C 800V MX. 0 μ 0V 3000 = C V 0 800V 2000 Thermal Resistances Symbol Parameter Value Unit / R θ(j-c) Junction to case (C) C/W / R θ(j-) Junction to ambient C/W 50 / Note: xx = voltage Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature Figure 2: Normalized DC Gate Trigger Voltage vs. Junction Temperature Ratio of I GT / I GT ( = 25ºC) Ratio of V GT / V GT ( = 25ºC) Junction Temperature ( ) (ºC) Junction Temperature ( ) (ºC)

4 Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: On-State Current vs. On-State Voltage (Typical) Ratio of I H / I H ( = 25ºC) Intantaneous On-state Current (i T ) mps = 25 C Junction Temperature ( ) (ºC) Instantaneous On-state Voltage (v T ) Volts Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum llowable Case Temperature vs. RMS On-State Current verage On-State Power Dissipation [P D(V) ] - (Watts) RMS On-State Current [I T(RMS) ] - (mps) Maximum llowable Case Temperature (T C ) - C CURRENT WVEFORM: Sinusoidal 75 LOD: Resistive or Inductive CONDUCTION NGLE: RMS On-State Current [I T(RMS) ] - mps Figure 7: Maximum llowable Case Temperature vs. verage On-State Current Figure 8: Maximum llowable mbient Temperature vs. RMS On-State Current Maximum llowable Case Temperature (T C ) - C CURRENT WVEFORM: Sinusoidal 75 LOD: Resistive or Inductive CONDUCTION NGLE: Maximum llowable mbient Temperature (T ) - ºC CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 FREE IR RTING verage On-State Current [I T(VE) ] - mps RMS On-State Current [I T(RMS) ] - mps

5 Figure 9: Maximum llowable mbient Temperature vs. verage On-State Current Maximum llowable mbient Temperature (T ) - ºC CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 FREE IR RTING verage On-State Current [I T(VE) ] - mps Note: xx = voltage Figure : Peak Capacitor Discharge Current Figure 11: Peak Capacitor Discharge Current Derating Peak Discharge Current (I TM ) - mps 0 I TRM Normalized Peak Current t W Pulse Current Duration (t W ) - ms Case Temperature (T C ) - ºC Figure 12: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive)On-state Current (I TSM ) mps 0 SUPPLY FREQUENCY: 60 Hz Sinusoidal LOD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. 1 0 Surge Current Duration -- Full Cycles

6 Temperature Teccor brand Thyristors Soldering Parameters Reflow Condition - Temperature Min (T s(min) ) 150 C Pb Free assembly T P Ramp-up t P Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) seconds Peak Temperature (T P ) /-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations % Matte Tin-plated UL recognized epoxy meeting flammability classification 94V-0 Copper lloy Careful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-40, Cond pplied Peak C C for 8 hours MIL-STD-750, M-51, cycles; -40 C to +150 C; 15-min dwell-time EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-31, 8 hours; 150 C 8 hours; -40 C MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 Cond E

7 Dimensions TO-220B (R-Package) Non-Isolated Mounting Tab Common with Center Lead E B C D NODE T C MESURING POINT O P RE (REF.) 0.17 IN Dimension Inches Millimeters Min Max Min Max B C D E G F L H R NOTCH IN GTE LED TO ID. NON-ISOLTED TB F G H J CTHODE NODE K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). K L M N O P R Dimensions TO-220B (L-Package) Isolated Mounting Tab E T C MESURING POINT RE (REF.) 0.17 IN 2 O P Dimension Inches Millimeters Min Max Min Max B C D B C D E F F G L H R G H J CTHODE NODE K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). K L M N O P R

8 Dimensions TO- 263B (N-package) D 2 -Pak Surface Mount B NODE V T C MESURING POINT C E RE: 0.11 in 2 Dimension Inches Millimeters Min Max Min Max W CTHODE G GTE D F S K H U J B C D E F G H J K S V U W Product Selector Voltage Part Number 400V 600V 800V 0V Gate Sensitivity Type Package X X X X 30m Standard SCR TO-220L X X X X 35m Standard SCR TO-220L X X X X 35m Standard SCR TO-220R X X X X 35m Standard SCR TO-263 Note: xx = Voltage Packing Options Part Number Marking Weight Packing Mode Base Quantity TP 2.2g Tube 500 (50 per tube) TP 2.2g Tube 500 (50 per tube) TP 2.2g Tube 500 (50 per tube) TP 1.6g Tube 500 (50 per tube) RP 1.6g Embossed Carrier 500 Note: xx = Voltage

9 Teccor brand Thyristors TO-263 Embossed Carrier Reel Pack (RP) Specifications Meets all EI Standards 0.63 (16.0) (4.0) DI (1.5) Gate Cathode (24.0) (2) * * Cover tape node (13.0) rbor Hole Dia (330.0) Dimensions are in inches (and millimeters). 1 (25.7) Direction of Feed Part Numbering System DEVICE TYPE S: SCR VOLTGE RTING 40: 400V 60: 600V 80: 800V K0: 0V CURRENT RTING 20: 20 25: 25 S L 56 LED FORM DIMENSIONS xx: Lead Form Option SENSITIVITY & TYPE (blank): = 30m Sxx25x = 35m PCKGE TYPE L: TO-220 Isolated R: TO-220 Non-Isolated N: TO-263 (D 2 -Pak) Part Marking System TO-220 B - (L and R Package) TO-263 B - (N Package) S6020R YM Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code