Obsolete Product(s) - Obsolete Product(s) A
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1 STT812D/D/G TURBOSWTCH ULTR-FST HGH VOLTGE DODE MN PRODUCT CHRCTERSTCS F(V) V RRM rr (yp) FETURES ND BENEFTS ULTR-FST, SOFT RECOVERY. VERY LOW OVERLL POWER LOSSES N BOTH THE DODE ND THE COMPNON TRNSSTOR. HGH FREQUENCY ND/OR HGH PULSED CURRENT OPERTON. HGH REVERSE VOLTGE CPBLTY NSULTED PCKGE : TO-220C ns. Elecrical insulaion : 2500V RMS Capaciance : 7pF. DESCRPTON V 50ns V F (max) 2.0V TURBOSWTCH 1200V drasically cus losses in all high volage operaions which require exremely fas, sof and noise-free power diodes. Due o heir opimized swiching performances hey also highly decrease power losses in any associaed swiching GBT or MOSFET in all freewheel mode operaions. BSOLUTE RTNGS (limiing values) They are paricularly suiable in moor conrol circuiries, or in he primary of SMPS as snubber, clamping or demagneizing diodes. They are also suiable for secondary of SMPS as high volage recifier diodes. Symbol Parameer Value Uni V RRM Repeiive peak reverse volage 1200 V V RSM Non repeiive peak reverse volage 1200 V F(RMS) RMS forward curren TO-220C/ D 2 PK 30 TO-220C ns. 20 FRM Repeiive peak forward curren p = 5 µs F = 5kHz square 110 FSM Surge non repeiive forward curren p = 10ms sinusoidal 70 T sg Sorage emperaure range - 65 o C T j Maximum operaing juncion emperaure 150 C K K TO-220C STT812D K NC D 2 PK STT812G K TO-220C ns. STT812D TURBOSWTCH is a rademark of STMicroelecronics. May Ed: 5C 1/10
2 THERML ND POWER DT Symbol Parameer Condiions Value Uni R h(j-c) P 1 P max Juncion o case hermal resisance Conducion power dissipaion F(V) =8 δ=0.5 Toal power dissipaion Pmax=P1+P3 (P3=10% P1) STTC ELECTRCL CHRCTERSTCS Tj = 25 C Symbol Parameer Tes condiions Min Typ Max Uni V F * Forward volage drop F =8 Tj = 25 C 2.2 V Tj = 125 C V R** Reverse leakage curren V R =0.8 x 100 µ V RRM Tj = 125 C m Vo Threshold volage p < 3. V Tj = 125 C 1.57 V rd Dynamic parameer 54 mω Tes pulses : * p = 380 µs, δ <2% **p=5ms,δ<2% TO-220C/D 2 PK TO-220C ns. TO-220C/D 2 PK TO-220C ns. TO-220C/D 2 PK TO-220C ns. To evaluae he maximum conducion losses use he following equaion : P=V o x F(V) +rdx 2 F (RMS) DYNMC ELECTRCL CHRCTERSTCS TURN-OFF SWTCHNG Tc= 105 C Tc= 85 C Tc= 100 C Tc= 79 C C/W 19.5 W 21.5 W Symbol Parameer Tes condiions Min Typ Max Uni rr Reverse recovery Tj = 25 C ns ime F = 0.5 R = 1 rr = F =1 d F /d =-50/µs V R =30V 100 RM Maximum reverse recovery curren Tj = 125 C VR = 600V F =8 d F /d = -64 /µs d F /d = -500 /µs 25 S facor Sofness facor Tj = 125 C V R = 600V F =8 d F /d = -500 /µs 1.2 TURN-ON SWTCHNG Symbol Parameer Tes condiions Min Typ Max Uni fr Forward recovery ime Tj = 25 C F =8, d F /d=64/µs measured a 1.1 V F max 900 ns V Fp Peak forward volage Tj = 25 C F =8, d F /d=64/µs F =40, d F /d = 500 /µs V 2/10
3 Fig. 1: Conducion losses versus average curren. Fig. 2: Forward volage drop versus forward curren (maximum values). P1(W) δ = 0.1 δ = 0.2 δ = δ = F(av) () Fig. 3: Relaive variaion of hermal impedance juncion o case versus pulse duraion Zh(j-c)/Rh(j-c) δ = 0.5 δ = δ = 0.1 Single pulse p(s) 0.0 1E-4 1E-3 1E-2 1E-1 1E+0 Fig. 5: Reverse recovery ime versus d F /d (90% confidence). rr(ns) VR=600V F=2*F(av) 300 F=F(av) F=0.5*F(av) 50 df/d(/µs) VFM(V) FM() Fig. 4: Peak reverse recovery curren versus d F /d (90% confidence) RM() VR=600V 10 df/d(/µs) Fig. 6: Sofness facor (b/a) versus d F /d (ypical values). S facor F=2*F(av) F=F(av) F=0.5*F(av) VR=600V F<2*F(av) df/d(/µs) /10
4 Fig. 7: Relaive variaion of dynamic parameers versus juncion emperaure (reference ). Fig.8: Transien peak forward volage versus d F /d (90% confidence) S facor RM Tj( C) Fig. 9: Forward recovery ime versus d F /d (90% confidence) fr(ns) VFR=1.1*VF max. F=F(av) 200 df/d(/µs) df/d(/µs) VFP(V) F=F(av) 4/10
5 PPLCTON DT The 1200V TURBOSWTCH series has been designed o provide he lowes overall power losses in all high frequency or high pulsed curren operaions. n such applicaions (Fig o D),he way of calculaing he power losses is given below : CONDUCTON LOSSES in he diode Fig. : FREEWHEEL MODE. TOTL LOSSES due o he diode P = P1+ P2+ P3+ P4+ P5 REVERSE LOSSES in he diode SWTCHNG TRNSSTOR Was SWTCHNG LOSSES in he diode DODE: TURBOSWTCH SWTCHNG LOSSES in he ansisor due o he diode V R T L F=1/T =/T LOD 5/10
6 Fig. B: SNUBBER DODE. Fig. C: DEMGNETZNG DODE. PWM T F = 1/T = /T Fig. D: RECTFER DODE. STTC & DYNMC CHRCTERSTCS. POWER LOSSES. Fig. E: STTC CHRCTERSTCS F Rd V VO V F R VR Conducion losses : P1=V 0. F(V) +R d. 2 F (RMS) Reverse losses : P2=V R. R.(1-δ) 6/10
7 PPLCTON DT (Con d) Fig. F: TURN-OFF CHRCTERSTCS V V V Fig. G: TURN-ON CHRCTERSTCS F Turn-on losses : (in he ransisor, due o he diode) P5 = V S F R 2 ( ) RM 6 xdf d VR RM L ( S + 2 ) F + 2 xd d Turn-off losses (in he diode) : P3 = V S F R 2 RM 6 xd d Turn-off losses : (wih non negligible serial inducance) P3 = V S F R 2 RM + 6 xdf d L 2 RM F 2 P3,P3 and P5 are suiable for power MOSFET and GBT 0 V Fp d F/d RM d F /d V F d F /d = V R /L RM rr = a + b S=b/a a a b rr = a + b b d R/d RECTFER OPERTON Fmax L TRNSSTOR d R/d DODE S = b / a VR V R Turn-on losses : P4 = 0.4 (V FP -V F ). Fmax. fr.f F F 1.1V F V F 0 fr 7/10
8 PCKGE DT TO-220C ns. l4 b1 B e Cooling mehod: by conducion (C) Recommended orque value: 0.8 m.n Maximum orque value: 1.0 m.n l2 a1 L a2 b2 c2 M C c1 DMENSONS REF. Millimeers nches Min. Typ. Max. Min. Typ. Max a a B b b C c c e F L l M F 8/10
9 PCKGE DT D 2 PK L DMENSONS REF. Millimeers nches Min. Max. Min. Max. E C2 L L3 G B2 B 1 M C 2 * R V2 * FLT ZONE NO LESS THN 2mm FOOTPRNT DMENSONS (in millimeers) B B C C D E G L L L M R 0.40 yp yp. V D 9/10
10 PCKGE DT TO-220C (JEDEC ouline) L2 F H2 G Ø Cooling mehod: by conducion (C) Recommended orque value: 0.55 m.n Maximum orque value: 0.7 m.n F1 L5 L9 L6 L4 C D M E DMENSONS REF. Millimeers nches Min. Max. Min. Max C D E F F G H L yp yp. L L L L L M 2.6 yp yp. Diam Ordering ype Marking Package Weigh Base qy Delivery mode STT812D STT812D TO-220C 1.86g 50 Tube STT812D STT812D TO-220C ns. 1.86g 250 Bulk STT812G STT812G D 2 PK 1.48g 50 Tube STT812G-TR STT812G D 2 PK 1.48g 500 Tape & reel Epoxy mees UL94,V0 L7 nformaion furnished is believed o be accurae and reliable. However, STMicroelecronics assumes no responsibiliy for he consequences of use of such informaion nor for any infringemen of paens or oher righs of hird paries which may resul from is use. No license is graned by implicaion or oherwise under any paen or paen righs of STMicroelecronics. Specificaions menioned in his publicaion are subjec o change wihou noice. This publicaion supersedes and replaces all informaion previously supplied. STMicroelecronics producs are no auhorized for use as criical componens in life suppor devices or sysems wihou express wrien approval of STMicroelecronics. The ST logo is a regisered rademark of STMicroelecronics 2002 STMicroelecronics - Prined in aly - ll righs reserved. STMicroelecronics GROUP OF COMPNES usralia - Brazil - Canada - China - Finland - France - Germany Hong Kong - ndia - srael - aly - Japan - Malaysia - Mala - Morocco - Singapore Spain - Sweden - Swizerland - Unied Kingdom - Unied Saes. hp:// 10/10
STTB3006P(I) TURBOSWITCH B. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 30A IF(AV) V RRM 600V. trr (typ) 60ns. VF (max) 1.
STTB3006P() TURBOSWTCH B. ULTR-FST HGH OLTGE DODE MN PRODUCTS CHRCTERSTCS F() RRM 30 600 rr (yp) 60ns F (max) 1.3 K PRELMNRY DT FETURES ND BENEFTS SPECFC TO THE FOLLOWNG OPER- TONS: Snubbing or clamping,
STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 8A 300 V I RM (typ.) Tj (max) 175 C TO-220AC STTH8R03D
STTH8R3G/D 3V HYPERFST RECTIFIER MJOR PRODUCT CHRCTERISTICS I F(V) V RRM 8 3 V I RM (typ.) 4 Tj (max) 175 C V F (max) 1.3 V trr (max) 3 ns FETURES ND BENEFITS Designed for high frequency applications.
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH8L6D/FP TURBO 2 ULTRFST HIGH VOLTGE RECTIFIER MIN PRODUCT CHRCTERISTICS I F(V) V RRM 8 6 V I R (max) 2 µ Tj (max) 75 C V F (max).5 V trr (max) 5 ns FETURES ND BENEFITS Ultrafast switching Low reverse
AN603 APPLICATION NOTE
AN603 APPLICAION NOE URBOSWICH IN A PFC BOOS CONVERER INRODUCION SMicroelecronics offers wo families of 600V ulrafas diodes (URBOSWICH"A" and "B" ) having differen compromises beween he forward characerisics
STTH6004W. Ultrafast high voltage rectifier. Table 1: Main product characteristics I F(AV) 60 A V RRM. 400 V T j (max) 175 C V F (typ)
STTH64W Ultrafast high voltage rectifier Table 1: Main product characteristics I F(AV) 6 A V RRM 4 V T j (max) 175 C V F (typ).83 V t rr (max) 5 ns Features and benefits Ultrafast switching Low reverse
STPS41L45CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER. MAIN PRODUCTS CHARACTERISTICS 2x20A 45 V Tj (max) 150 C
STPS41L45CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER MIN PRODUCTS CHRCTERISTICS I F(V) V RRM 2x2 45 V Tj (max) 15 C V F (max).47 V 2 K FETURES ND BENEFITS VERY SMLL CONDUCTION LOSSES NEGLIGIBLE SWITCHING
Obsolete Product(s) - Obsolete Product(s)
STTH124TV1 Ultrafast high voltage rectifier Table 1: Main product characteristics I F(AV) 2 x 6 A V RRM 4 V T j (max) 15 C V F (typ) t rr (max) Features and benefits Ultrafast switching Low reverse current
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH TURBO ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM FEATURES AND BENEFITS Ultrafast switching Low reverse recovery current A V Tj (max) 7 C V F (max) trr (max). V ns
BAT60J SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP
BA60J SMALL SIGNAL SCHOKY DIODE FEAURES AND BENEFIS VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES LOW FORWARD VOLAGE DROP A 60 K EXREMELY FAS SWICHING SURFACE MOUNED DEVICE DESCRIPION Schottky
STPS10L60D/FP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 10 A 60 V Tj (max) 150 C TO-220FPAC STPS10L60FP
SPSL6D/FP POWER SCHOKY RECIFIER MIN PRODUC CHRCERISICS I F(V) V RRM 6 V j (max) 5 C V F (max).56 V FEURES ND BENEFIS LOW FORWRD VOLGE DROP NEGLIGIBLE SWICHING LOSSES LOW HERML RESISNCE VLNCHE CPBILIY SPECIFIED
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH5R6 TURBO 2 ULTRST HIGH VOLTGE RECTIIER Table 1: Main Product Characteristics I (V) 5 V RRM 6 V T j 175 C V (typ) 1.4 V t rr (max) 4 ns ETURES ND BENEITS Ultrafast switching Low reverse recovery current
Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel
Small Signal Fas Swiching Diode Feaures These diodes are also available in oher case syles including he DO- case wih he ype designaion N8, he MiniMELF case wih he ype designaion LL8, and he SOT- case wih
STTH212RL. High voltage ultrafast diode. Main product characteristics. Features and benefits. Order codes. Description DO-201AD STTH212
High voltage ultrafast diode Main product characteristics I F(AV) 2 A A K V RRM 12 V T j 175 C V F (typ) 1. V t rr (max) Features and benefits Low forward voltage drop High reliability High surge current
STPS2030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS. 2x10A 30 V Tj (max) 150 C
STPS23CT/CG/CR LOW DROP POWER SCHOTTY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I F(AV) V RRM 2xA 3 V Tj (max) 5 C V F (max).4 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES
BAR42FILM BAR43FILM SMALL SIGNAL SCHOTTKY DIODE. Table 1: Main Product Characteristics I F(AV) 0.1 A V RRM. 30 V T j 150 C 0.33 and 0.
BR42FILM BR43FILM SMLL SIGNL SCHOTTY DIODE Table 1: Main Product Characteristics I F(V) 0.1 V RRM 30 V T j 150 C V F (max) 0.33 and 0.40 V FETURES ND BENEFITS Very small conduction losses Negligible switching
p h a s e - o u t Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VVZB 135 = 1600 V = 135 A Recommended replacement:
VVZB 5 Three Phase Recifier Bridge wih IGBT and Fas Recovery Diode for Braking Sysem V RRM I dvm = 6 V = 5 V RRM Type + 6 5 4 NTC 9 + V 6 VVZB 5-6 NO 6+7 4+5 + Symbol Condiions Maximum Raings V RRM 6 V
ULTRAFAST RECTIFIER PDP ENERGY RECOVERY
STTH40P03S ULTRST RECTIIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics I (V) 40 V RRM 300 V V P (typ) 2.5 V I RM (typ) 5 T j 175 C V (typ) 0.9 V ETURES ND BENEITS Ultrafast recovery allowing
Power MOSFET Stage for Boost Converters
UM 33-5N Power MOSFET Sage for Boos Converers Module for Power Facor Correcion 5 = 7 DSS = 5 R DS(on) =. Ω RRM (Diode) DSS Type 5 3 7 3 5 UM 33-5N 5 7 Symbol Condiions Maximum Raings DSS T J = 5 C o 5
ULTRAFAST RECTIFIER PDP ENERGY RECOVERY
ULTRST RECTIIER PP ENERGY RECOVERY Table 1: Main Product Characteristics I (V) V RRM V P (typ) I RM (typ) 6 3 V 2.5 V 6 T j 175 C V (typ).9 V K ETURES N BENEITS Ultrafast recovery allowing High Sustain
STPS3L60/Q/U POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 60 V Tj (max) 150 C DO-15 STPS3L60Q DO-201AD STPS3L60
SPS3L6/Q/U POWER SCHOKY RECIFIER MAIN PRODUC CHARACERISICS I F(AV) V RRM 3A 6 V j (max) 5 C V F (max).6 V FEAURES AND BENEFIS NEGLIGIBLE SWICHING LOSSES LOW HERMAL RESISANCE AVALANCHE CAPABILIY SPECIFIED
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER Main product characteristics
STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP
Ultrafast recovery - high voltage diode Main product characteristics I F(AV) V RRM T j V F (typ) t rr (typ) Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER Table 1: Main Product Characteristics I (AV) Up to 2 x A V RRM 6 V T j 175 C V (typ).95 V t rr (max) 55 ns EATURES AND BENEITS Ultrafast switching Low reverse current
STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1
STTH61R4TV Ultrafast recovery diode Main product characteristics I F(AV) 2 x 3 A V RRM 4 V T j V F (typ) 15 C.95 V t rr (typ) 24 ns Features and benefits Ultrafast Very low switching losses High frequency
STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes
STTH6R4 Ultrafast recovery diode Main product characteristics I F(AV) 6 A V RRM T j 4 V 175 C A K V F (typ).95 V t rr (typ) 31 ns Features and benefits Very low switching losses High frequency and/or high
STTH1210G. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Description. Order codes K TO-220AC STTH1210D
STTH12 Ultrafast recovery - high voltage diode Main product characteristics I F(V) 12 K V RRM V T j 175 C V F (typ) 1.3 V t rr (typ) 48 ns Features and benefits Ultrafast, soft recovery Very low conduction
STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB
Ultrafast recovery diode Main product characteristics I F(AV) 2 X 8 A A1 A2 K V RRM 4 V T j 175 C V F (typ) t rr (typ).9 V 25 ns A1 K A2 A1 A2 K Features and benefits TO-22AB T TO-22FPAB FP Very low switching
IXGH48N60C3D1. GenX3 TM 600V IGBT with Diode V CES = 600V I C110. = 48A V CE(sat) 2.5V t fi(typ) = 38ns. High speed PT IGBT for kHz Switching
GenX3 TM 6V IGBT wih Diode High speed PT IGBT for 4-1kHz Swiching IXGH48N6C3D1 V CES = 6V 11 = 48A V CE(sa) 2.V fi(yp) = 38ns TO-247 Symbol Tes Condiions Maximum Raings V CES = C o C 6 V V CGR = C o C,
STPS1L40M LOW DROP POWER SCHOTTKY RECTIFIER. Table 1: Main Product Characteristics I F(AV) V RRM. 1 A 40 V T j (max) 150 C V F (max) 0.
LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics I F(AV) V RRM 1 A 40 V T j (max) 150 C V F (max) 0 V C A FEATURES AND BENEFITS Very small conduction losses Negligible switching
STTH3002. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes K DOP3I STTH3002PI DO-247 STTH3002W
Ultrafast recovery diode Main product characteristics I F(V) 3 K V RRM 2 V T j (max) 175 C V F (typ).77 V t rr (typ) 22 ns Features and benefits Very low conduction losses Negligible switching losses K
Features / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C2 = 16 = 2.2 CE(sa) Boos Chopper + free wheeling Diode Par number MID14-123 Backside: isolaed 1 3 4 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low sauraion
Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 150 V I F(RMS) RMS forward voltage 15 A
Power Schottky rectifier Main product characteristics I F(AV) V RRM j (max) V F (max) 3 A 15 V 175 C.67 V Description 15 V Power Schottky rectifier are suited for switch mode power supplies on up to 24
1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS. 1 A 40 V Tj 150 C
N8x LOW DROP POWER SCHOKY RECIFIER MAJOR PRODUCS CHARACERISICS IF(AV) VRRM A 4 V j C VF (max) V FEAURES AND BENEFIS VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES EXREMELY FAS SWICHING LOW FORWARD
DO-15 DO-201AD STTH3R04Q STTH3R04
STTH3R4 Ultrafast recovery diode Features Negligible switching losses Low forward and reverse recovery times High junction temperature Description The STTH3R4 series uses ST's new 4 V planar Pt doping
FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD
1N582x LOW DROP POWER SCHOKY RECIFIER MAJOR PRODUCS CHARACERISICS IF(AV) VRRM 3 A 4 V j 15 C VF (max).475 V FEAURES AND BENEFIS VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES EXREMELY FAS SWICHING
Features / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C25 = 16 = 2.2 CE(sa) Buck Chopper + free wheeling Diode Par number MDI145-123 Backside: isolaed 1 7 6 3 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low
Converter - Brake - Inverter Module (CBI2)
MUBW 5-6 7 Converer - Brake - Inverer Module (CBI2) 2 22 D D3 D5 2 3 7 D7 6 5 T D T3 D3 T5 D5 8 2 6 7 5 9 4 D2 D4 D6 T7 T2 D2 T4 D4 T6 D6 23 4 24 2 3 NTC 8 9 Three Phase Brake Chopper Three Phase Recifier
Silicon Diffused Power Transistor
Philips Semiconducors Silicon Diffused Power Transisor Produc specificaion GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper
Features / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = x 1 I C = 9 =. CE(sa) Phase leg Par number MII7-13 1 Backside: isolaed 7 3 Feaures / dvanages: pplicaions: Package: Y NPT IGBT echnology low sauraion volage low swiching losses
Silicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision
STTH506TTI. Tandem 600V HYPERFAST RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I F(AV) 5A 600 V (in series) Tj (max) 150 C
Tandem V HYPERAT RECTIIER MAJOR PRODUCT CHARACTERITIC I (AV) V RRM 5A V (in series) Tj (max) 15 C V (max). V I RM (typ.) 3. A EATURE AND BENEIT EPECIALLY UITED A BOOT DIODE IN CONTINUOU MODE POWER ACTOR
V DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2
3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
April 996 NP45L / NB45L N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These logic level N-Channel enhancemen mode power field effec ransisors are produced using
Converter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D1 1 2 3 7 D7 16 1 T1 D1 T3 D3 T D 18 2 6 17 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 1 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
Silicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high-speed swiching npn ransisors in a fully isolaed SOT99 envelope, primarily for use in horizonal deflecion circuis of colour elevision receivers. QUICK REFERENCE DATA
Top View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.
V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC /20 NTC. Features / Advantages: Applications: Package: E2-Pack
ZB3-6ioX hyrisor Module M = 6 I = D FSM = 7 I 3~ ecifier Brake hopper ES = 2 I = 2 2 E(sa) =,8 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni + N Par number ZB3-6ioX Backside: isolaed / 3 2
5STF 11F3010 Old part no. TR Fast Thyristor
5STF 11F31 5STF 11F31 Old par no. TR 918-111-3 Fas Thyrisor Properies Key Parameers Amplifying gae V DRM, V RRM = 3 V High operaional capabiliy I TAV = 1 11 A Opimized urn-off parameers I TSM = 1. ka V
Silicon Diffused Power Transistor
PHE39 GENERAL DESCRIPTION The PHE39 is a silicon npn power swiching ransisor in he TO22AB envelope inended for use in high frequency elecronic lighing ballas applicaions, converers, inverers, swiching
Type Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2
SMBT94...MMBT94 NPN Silicon Swiching Transisors High D curren gain:. ma o ma Low collecoremier sauraion volage For SMBT94S: Two (galvanic) inernal isolaed ransisors wih good maching in one package omplemenary
CoolMOS 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode
IXKF 4N6SCD1 CoolMOS 1) Power MOSFET wih Series Schoky Diode and Ulra Fas niparallel Diode in High olage ISOPLUS i4-pc S = 6 2 = 41 yp. = 6 mω rr = 7 ISOPLUS i4-pc Preliminary daa 1 D S T D F 1 2 E72873
STTH3R06RL TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER. Table 1: Main Product Characteristics I F(AV) V RRM
STTH3R6 TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER Table 1: Main Product Characteristics I (AV) V RRM 3 A 6 V I R (max) 1 µa T j 175 C V (typ) 1. V t rr (typ) 35 ns A K EATURES AND BENEITS Ultrafast switching
STTH312B. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Description. Order codes
STTH31 Ultrafast recovery - 1 V diode Main product characteristics I (AV) 3 A V RRM 1 V T j 175 C V (typ) 1.15 V t rr (typ) 55 ns K A K eatures and benefits Ultrafast, soft recovery Very low conduction
Silicon Diffused Power Transistor
GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved RBSOA performance
Silicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision
Converter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D15 1 2 3 7 D7 16 15 T1 D1 T3 D3 T5 D5 18 6 17 5 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
5STF 28H2060. Fast Thyristor. VDRM, VRRM = V High operational capability. ITAV = A Optimized turn-off parameters
5STF 28H26 5STF 28H26 Fas Thyrisor Properies Key Parameers Amplifying gae VDRM, VRRM = 2 V High operaional capabiliy ITAV = 2 667 A Opimized urn-off parameers ITSM = 46.5 ka VTO = 1.198 V Applicaions rt
5STF 07T1414 Old part no. TR 907FC
5STF 7T1414 Medium Frequency Thyrisor Properies 5STF 7T1414 Old par no. TR 97FC-74-14 Key Parameers Amplifying gae V DRM, V RRM = 1 4 V High operaional capabiliy I TAV = 736 A Opimized urn-on and urn-off
AO V Complementary Enhancement Mode Field Effect Transistor
AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used
Top View. Top View S2 G2 S1 G1
AO49 3V Complemenary MOSFET General Descripion AO49 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. This complemenary N and P channel MOSFET configuraion is ideal for low
Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit I T(RMS)
TYN61M 1 SCR Table 1: Main Features Symbol Value Unit I T(RMS) 1 V DRM /V RRM 6 V I T (min./max.) 1.5 / 5 m K DESCRIPTION The TYN61M SCR is suitable to fit modes of control found in applications such as
XPT IGBT Module MIXA450PF1200TSF. Phase leg + free wheeling Diodes + NTC MIXA450PF1200TSF. Part number
XPT IGBT Module CS 2x 12 I C25 1.8 C(sa) Phase leg + free wheeling Diodes + NTC Par number Backside: isolaed 5 2 1 8 7 9 3 4 /11 Feaures / dvanages: pplicaions: Package: SimBus F High level of inegraion
TrenchMV TM Power MOSFET
Preliminary Technical Informaion TrenchMV TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed V DSS = V I D25 = A R DS(on) 7. mω TO-263 (IXTA) Symbol Tes Condiions Maximum Raings V DSS = 25 C o 175
Silicon Diffused Power Transistor
GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved
S G V DS V GS Pulsed Drain Current B -15 Schottky reverse voltage Continuous Forward Current A F I DM V KA
ON473 2V PChannel MOSFET wih Schoky Diode General Descripion The ON473 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. Schoky diode is provided o faciliae he implemenaion
Converter - Brake - Inverter Module (CBI3)
MUBW 35-12 8 Converer - Brake - Inverer Module (CBI3) 21 22 D11 D13 D15 1 2 3 7 D7 1 15 T1 D1 T3 D3 T5 D5 18 2 17 5 19 4 D12 D14 D1 23 14 24 T7 11 1 T2 D2 T4 D4 T D 12 13 See ouline drawing for pin arrangemen
Silicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high speed swiching npn ransisor in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers. Feaures excepional olerance
Silicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high-speed swiching npn ransisor wih inegraed damper diode in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers.
ABSOLUTE MAXIMUM RATINGS (TC=25 ) Item Symbol Unit MBL400E33D. DC IC 400 A 1ms ICp. 800 Forward Current. DC IF 400 A 1ms IFM
IGBT MODULE Spec.No.IGBT-SP-68 R4 P1/7 MBL4E33D Silicon N-channel IGBT FEATURES High hermal faigue durabiliy.(dela Tc=7,N>3,cycles) High speed, low loss IGBT module. Low noise due o buil-in free-wheeling
IXFK120N65X2 IXFX120N65X2
X2-Class HiPerFET TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic iode Preliminary Technical Informaion IXFK2N65X2 IXFX2N65X2 V SS = 6 I 25 = 2A R S(on) 24m TO-264 (IXFK) Symbol Tes
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 3A - 600 D 2 PAK Power MESH IGBT TYPE CES CE(sat) I c STGB3NB60SD 600
MBL1000E33E2-B Silicon N-channel IGBT 3300V E2 version
MBL1E33E2-B Silicon N-channel IGBT 33V E2 version Spec.No.IGBT-SP-113 R1 P1 FEATURES Sof swiching behavior & low conducion loss: Sof low-injecion punch-hrough High conduciviy IGBT. Low driving power due
ABSOLUTE MAXIMUM RATINGS (Tc=25 o C) Item Symbol Unit MDM500H65E2. 6,500 VRRM Voltage
MDM5H65E2 FEATURES Low noise recovery: Ulra sof fas recovery diode. High reverse recovery capabiliy: Super HiRC Srucure. High reliabiliy, high durabiliy diodes. Isolaed hea sink (erminal o base). Spec.No.SR2-SP-97
Features / Advantages: Applications: Package: SMPD
X0PLB XP GB x CES C CE(sa). SOPLUS Surface Moun Power Device Phase leg SCR / GB Par number X0PLB Backside: isolaed E664 6 4 Feaures / dvanages: pplicaions: Package: SMPD XP GB - low sauraion volage - posiive
Disribued by: www.jameco.com -800-83-44 The conen and copyrighs of he aached maerial are he propery of is owner. Preferred Device Schoky Barrier Diodes These Schoky barrier diodes are designed for high
STPS1545. Power Schottky rectifier. Main product characteristics. Features and Benefits. Description 15 A 45 V
Power Schottky rectifier Main product characteristics I F(V) V RRM T j (max) V F (max) Features and Benefits Very small conduction losses Negligible switching losses Extremely fast switching Insulated
STTH1506DPI. Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS I F(AV) 15 A 600 V Tj (max) 150 C
TTH156DPI Tandem 6V HYPERAT BOOT DIODE MAJOR PRODUCT CHARACTERITIC I (AV) V RRM 15 A 6 V Tj (max) 15 C V (max).4 V I RM (typ.) 4.8 A t rr (typ.) 16 ns EATURE AND BENEIT EPECIALLY UITED A BOOT DIODE IN
TN12, TS12 and TYNx12 Series
TN12, TS12 and TYNx12 Series SENSITIVE & STNDRD 12 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 12 V DRM /V RRM 600 to 1000 V K I T 0.2 to 15 m DESCRIPTION vailable either in sensitive (TS12) or standard
FEATURES SYMBOL QUICK REFERENCE DATA GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
FEAURES SYMBOL QUICK REFERENCE DAA Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Low thermal resistance k a 2 V R = 300 V/ 400 V/ 500 V V F.03 V I F(AV)
IXTA96P085T IXTP96P085T IXTH96P085T
TrenchP TM Power MOSFETs P-Channel Enhancemen Mode Avalanche Raed IXTA96P85T IXTP96P85T V DSS = - 85V I D25 = - 96A R DS(on) 13mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Tes Condiions Maximum Raings V DSS
TN8, TS8 and TYNx08 Series
SENSITIVE & STNDRD 8 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 8 K V DRM /V RRM 600 to 1000 V I T 0.2 to 15 m DESCRIPTION vailable either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels,
Standard Rectifier Module
UB2-6NOX Sandard ecifier Module M = 6 I = 8 D 3~ ecifier I SM = Brake hopper ES = 2 I = 8 25 E(sa) =.7 3~ ecifier Bridge + Brake Uni Par number UB2-6NOX M/O S Backside: isolaed ~6 ~E6 ~K6 U/ W M/O W U
MBN1200E33D. DC I C 1,200 A 1ms I Cp. 2,400 Forward Current. DC I F 1,200 A 1ms I FM. 2,400 Junction Temperature. o C -40 ~ +125
IGBT MODULE Spec.No.IGBT-SP-25 R8 P1/6 MBN12E33D Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas recovery
T4 Series 4A TRIACS. Table 1: Main Features Symbol Value Unit I T(RMS) 4 A. V DRM /V RRM 600 to 800 V. I GT (Q1 ) 5 to 35 ma
T4 Series SNUBBERLESS & LOIC LEVEL 4A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 4 A V DRM /V RRM 600 to 800 V I T (Q1 ) 5 to 35 ma DESCRIPTION Based on ST s Snubberless / Logic level technology
NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 996 NS356P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's
STTH6006W. Turbo 2 ultrafast - high voltage rectifier. Features and benefits. Description. Main product characteristics
Turbo 2 ultrafast - high voltage rectifier Table 1. Main product characteristics I (AV) 6 A A K V RRM 6 V T j 175 C V (typ) 1.1 V t rr (max) 6 ns A eatures and benefits Ultrafast switching Low reverse
STTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features
STTH6SW3C Turbo 2 ultrafast high voltage rectifier A1 A2 K Description Datasheet production data The STTH6SW3C uses ST Turbo 2 3 V technology. It is especially suited to be used for DC/DC and DC/AC converters
BTA12, BTB12 and T12 Series
BTA12, BTB12 and T12 Series SNUBBERLESS, LOIC LEVEL & STANDARD 12A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 12 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 to 5 ma A1 DESCRIPTION Available either
Item Symbol Unit MBN800E33D Collector Emitter Voltage V CES V 3,300 Gate Emitter Voltage V GES V ±20 Collector Current. DC I C 800 A 1ms I Cp
IGBT MODULE Spec.No.IGBT-SP-312 R4 P1 Silicon N-channel IGBT OUTLINE DRAWING FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas
STTH5L06. Turbo 2 ultrafast high voltage rectifier. Description. Features
Turbo 2 ultrafast high voltage rectifier Description Datasheet - production data The STTH5L06 is developed using St's Turbo 2 600 V technology. It is well-suited as a boost diode, especially for use in
Item Symbol Unit MBM1200E17D Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V ±20 Collector Current. DC I C 1,200 A 1ms I Cp
MBM1E17D Silicon N-channel IGBT 1. FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas recovery diode. High reliabiliy, high durabiliy
BTA/BTB24, BTA25, BTA26 and T25 Series
BTA/BTB24, BT5, BT6 and T25 Series SNUBBERLESS & STANDARD 25A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 25 A V DRM /V RRM 6 and 8 V I T (Q1 ) 35 to 5 ma DESCRIPTION Available either in through-hole
p h a s e - o u t Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM X2
GWM 18-4X2 Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 4 V 25 = 18 R DSon yp. = 1.9 mw Preliminary daa G1 G3 G5 L+ S1 G2 S3 G4 S5 G6 L1 L2 L3 Sraigh leads Surface
NDS8434A Single P-Channel Enhancement Mode Field Effect Transistor
March 997 NS8434A Single P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures SO-8 P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
STPS340U/S/B POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 3A 40 V Tj (max) 150 C FEATURES AND BENEFITS
SPS4U/S/B POWER SCHOKY RECIFIER MAIN PRODUC CHARACERISICS FEAURES AND BENEFIS I F(AV) V RRM A 4 V j (max) 15 C V F (max).57 V VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES LOW FORWARD VOLAGE DROP
NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor
January 997 NS3AN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -3 N-Channel logic level enhancemen mode power field effec ransisors are produced using
STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features
STTH1LCD6 Turbo 2 ultrafast - high voltage rectifier for flat panel displays Description Datasheet - production data The STTH1LCD6 uses ST Turbo 2 technology. This device is suited for power applications
V DS. 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The AO4449 uses advanced rench echnology o provide excellen R(ON), and ulralow low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
BTA/BTB16 and T16 Series
BTA/BTB16 and T16 Series SNUBBERLESS, LOIC LEVEL & STANDARD 16A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 16 A V DRM /V RRM 6, 7 and 8 V I T (Q1 ) 1 to 5 ma DESCRIPTION Available either in through-hole