STPS1545. Power Schottky rectifier. Main product characteristics. Features and Benefits. Description 15 A 45 V
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1 Power Schottky rectifier Main product characteristics I F(V) V RRM T j (max) V F (max) Features and Benefits Very small conduction losses Negligible switching losses Extremely fast switching Insulated package: TO-22FPC insulating voltage = 2V DC capacitance = 12 pf valanche capability specified Description V 175 C.57 V Single chip Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-22C, TO-22FPC, I 2 PK or D 2 PK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. K TO-22C STPS1545D I 2 PK STPS1545R K TO-22FPC STPS1545FP K NC K D 2 PK STPS1545G March 27 Rev 6 1/1 1
2 Characteristics STPS Characteristics Table 1. bsolute Ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) RMS forward voltage 3 I F(V) I FSM verage forward current δ =.5 Surge non repetitive forward current TO-22C I 2 PK, D 2 PK TO-22FPC t p = 1 ms Sinusoidal T c = 155 C T c = 13 C t I RRM Peak repetitive reverse current p = 2 µs square 1 F = 1 khz I RSM Non repetitive peak reverse current t p = 1 µs square 3 P RM Repetitive peak avalanche power t p = 1 µs T j = 25 C 6 W T stg Storage temperature range -65 to C T j Maximum operating junction temperature (1) 175 C dv/dt Critical rate of rise of reverse voltage 1 V/µs dptot < 1 thermal runaway condition for a diode on its own heatsink dtj Rth ( j a) Table 2. Thermal resistances Symbol Parameter Value Unit R th(j-c) Junction to case TO-22C, I 2 PK, D 2 PK 1.6 TO-22FPC 4. C/W Table 3. Static electrical characteristics (per diode) Symbol Parameter Test Conditions Min. Typ. Max. Unit I R (1) V F (1) Reverse leakage current Forward voltage drop T j = 25 C 2 µ V R = V RRM T j = 125 C 11 4 m T j = 125 C I F = T j = 25 C I F = 3.84 V T j = 125 C I F = Pulse test: tp = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: P =.42 x I F(V) +.1 I F 2 (RMS) 2/1
3 Characteristics Figure 1. verage forward power dissipation versus average forward current Figure 2. verage forward current versus ambient temperature (δ =.5) P F(V) (W) δ =.5 δ =.1 δ =.2 δ =.5 δ = I F(V) () R th(j-a) =15 C/W R =R th(j-a) th(j-c) TO-22C TO-22FPC 4 T 2 I F(V) () δ=tp/t tp T 4 2 δ=tp/t tp T amb( C) Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 1 P RM(t p) P RM(1µs) 1.2 P RM(t p) P RM(25 C) t p(µs) T ( C) j Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values) (TO-22C, I 2 PK D 2 PK) Figure 6. Non repetitive surge peak forward current versus overload duration (maximum values) ( TO-22FPC) I M() T C=75 C 1 8 T C=1 C 6 T C=125 C 4 IM 2 t t(s) δ=.5 1E-3 1E-2 1E-1 1E I () M IM t δ=.5 t(s) T C=75 C T C=1 C T C=125 C 1E-3 1E-2 1E-1 1E+ 3/1
4 Characteristics STPS1545 Figure 7. Relative variation of thermal impedance junction to case versus pulse duration (TO-22C, I 2 PK D 2 PK) Figure 8. Relative variation of thermal impedance junction to case versus pulse duration ( TO-22FPC) 1. Z th(j-c) /Rth(j-c) 1. Z th(j-c) /Rth(j-c) δ =.5.6 δ =.5.4 δ =.2 T δ =.1.2 t p(s) Single pulse δ=tp/t tp. 1E-4 1E-3 1E-2 1E-1 1E+.4 δ =.2 T δ =.1.2 t p(s) Single pulse δ=tp/t tp. 1E-3 1E-2 1E-1 1E+ 1E+1 Figure 9. Reverse leakage current versus reverse voltage applied (typical values) Figure 1. Junction capacitance versus reverse voltage applied (typical values) 5E+4 1E+4 I (µ) R T j=15 C T j=125 C 2 1 C(pF) F=1MHz V OSC=3mVRMS T j=25 C 1E+3 T j=1 C T j=75 C 5 1E+2 T j=5 C 1E+1 T j=25 C 2 V R(V) 1E V R(V) Figure 11. I FM() 1. Forward voltage drop versus forward current (maximum values) T j=125 C (typical values) Figure R th(j-a) ( C/W) Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, Cu=35 µm) (D 2 PK) 1. T j=125 C T j=25 C V FM(V) S(Cu)(cm²) /1
5 Package Information 2 Package Information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.55 Nm Maximum torque value:.7 Nm Table 4. TO-22FPC dimensions Ref Millimeters Dimensions Inches H B Min. Max. Min. Max B D Dia E F L6 F L2 L7 F L3 L4 F1 L5 D G G H L2 16 Typ..63 Typ. G1 G F E L L L L L Dia /1
6 Package Information STPS1545 Table 5. I 2 PK dimensions Dimensions Ref Millimeters Inches Min. Max. Min. Max. L2 E c b b D b c L1 1 c L b1 D e e e1 b c E L L L /1
7 Package Information Table 6. D 2 PK Package dimensions Dimensions Ref Millimeters Inches Min. Max. Min. Max L2 E C L L3 1 D B B C G B2 B C 2 R C D E G M * V2 * FLT ZONE NO LESS THN 2mm L L L M R.4 typ..16 typ. Figure 13. Footprint (dimensions in millimeters) /1
8 Package Information STPS1545 Table 7. TO-22C dimensions Dimensions Ref Millimeters Inches Min. Max. Min. Max H2 Ø I C C D L5 L7 E F L6 F L2 F F1 L9 D G G L4 H F G M E L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam In order to meet environmental requirements, ST offers these devices in ECOPCK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPCK is an ST trademark. ECOPCK specifications are available at: 8/1
9 Ordering Information 3 Ordering Information Ordering type Marking Package Weight Base qty Delivery mode STPS1545D STPS1545D TO-22C 1.86 g 5 Tube STPS1545FP STPS1545FP TO-22FPC 1.9 g 5 Tube STPS1545R STPS1545R I 2 PK 1.7 g 5 Tube STPS1545G STPS1545G D 2 PK 1.48 g 5 Tube STPS1545G-TR STPS1545G D 2 PK 1.48 g 1 Tape & Reel 4 Revision history Date Revision Description of Changes Jul-23 5F Last release. 21-Mar-27 6 Removed ISOWTT package. 9/1
10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY N UTHORIZED ST REPRESENTTIVE, ST PRODUCTS RE NOT RECOMMENDED, UTHORIZED OR WRRNTED FOR USE IN MILITRY, IR CRFT, SPCE, LIFE SVING, OR LIFE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FILURE OR MLFUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. ST PRODUCTS WHICH RE NOT SPECIFIED S "UTOMOTIVE GRDE" MY ONLY BE USED IN UTOMOTIVE PPLICTIONS T USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners. 27 STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica 1/1
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