STTH1R04. Ultrafast recovery diode. Description. Features
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1 STTH1R4 Ultrafast recovery diode Datasheet - production data DO-41 STTH1R4 A K DO-15 STTH1R4Q Band indicates cathode side. Description The STTH1R4 series uses ST's new 4 V planar Pt doping technology. The STTH1R4 is specially suited for switching mode base drive and transistor circuits. Packaged in axial and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Table 1. Device summary SMA STTH1R4A SMB STTH1R4U I F(AV) V RRM 1 A 4 V T j (max) 175 Features Negligible switching losses Low forward and reverse recovery times High junction temperature V F (typ) t rr (typ).9 V 14 ns November 15 DocID14749 Rev 2 1/ This is information on a product in full production.
2 haracteristics STTH1R4 1 haracteristics Table 2. Absolute ratings (limiting values at 25, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V DO-41 T lead = I F(AV) Average forward current, δ =.5 DO-15 T lead = 5 SMA T lead = A SMB T lead = 14 I FSM Surge non repetitive forward current t p = ms Sinusoidal 3 A T stg Storage temperature range -65 to +175 T j Maximum operating junction temperature (1) On infinite heatsink with mm lead length Table 3. Thermal parameters Symbol Parameter Value Unit R th(j-l) R th(j-l) Junction to lead Junction to lead Lead length = mm on infinite heatsink DO DO-15 5 SMA 35 SMB 25 /W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit I R (1) Reverse leakage current T j = 25 5 V R = V RRM T j = µa T j = V F (2) Forward voltage drop T j = I F = 1. A V T j = Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P =.9 x I F(AV) +.25 x I F 2 (RMS) 2/ DocID14749 Rev 2
3 STTH1R4 haracteristics Table 5. Dynamic characteristics (T j = 25 unless otherwise stated) Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery time I F = 1 A, di F /dt = -5 A/µs, V R = 3 V, T j = 25 I F = 1 A, di F /dt = - A/µs, V R = 3 V, T j = ns I RM Reverse recovery current I F = 1 A, di F /dt = - A/µs, V R = 3 V, T j = A t fr Forward recovery time I F = 1 A di F /dt = A/µs V FR = 1.1 x V Fmax, T j = 25 5 ns V FP Forward recovery voltage I F = 1 A di F /dt = A/µs 3.5 V 1.6 P(W) Figure 1. onduction losses versus average forward current Figure 2. Forward voltage drop versus forward current 5 I FM (A) 1.4 δ=.5 δ=.1 δ=.2 δ=.5 δ= T J =15 (Maximum values) IF(AV) (A) δ=tp/t tp T T J =15 (Typical values) T J =25 (Maximum values) V FM (V) Figure 3. Relative variation of thermal impedance junction to lead versus pulse duration (DO-41) Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration (DO-15) 1..9 Z th(j-a) /R th(j-a) DO-41 L leads =mm 1..9 Z th(j -a) /R th(j -a) DO-1 5 L leads =mm Single pulse t P (s). 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3.2 Single pulse.1 t P (s). 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 DocID14749 Rev 2 3/
4 haracteristics STTH1R4 Figure 5. Relative variation of thermal impedance junction to lead versus pulse duration, SMA Figure 6. Relative variation of thermal impedance junction to lead versus pulse duration, SMB Z th(j-a) /R th(j-a) 1. SMA.9 S cu=1cm Single pulse.1 t P (s). 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Z th(j-a) /R th(j-a) 1. SMB.9 S cu =1cm² Single pulse.1 t P (s). 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Figure 7. Junction capacitance versus reverse voltage applied (typical values) Figure 8. Reverse recovery charges versus di F /dt (typical values) (pf) F=1MHz V OS =3mV RMS T j = Q RR (n) I F = 1 A V R =3 V T j =125 1 V R (V) 1 8 T j =25 4 di F /dt(a/µs) Figure 9. Reverse recovery time versus di F /dt (typical values) t RR (ns) T j =125 T j =25 di F /dt(a/µs) I F = 1 A V R =3 V Figure. Peak reverse recovery current versus di F /dt (typical values) I RM (A) I F = 1 A V R =3 V T j =125 T j =25 di F /dt(a/µs) 4/ DocID14749 Rev 2
5 STTH1R4 haracteristics Figure 11. Relative variations of dynamic parameters versus junction temperature Figure 12. Transient peak forward voltage versus di F /dt (typical values) Q RR ;I RM [T j ]/Q j RR ;I RM [T j =125 ] j I F = 1 A V R =3 V I RM Q RR V Fp (V) I F =1 A T j =125.2 T j ( ) di F /dt(a/µs) Figure 13. Forward recovery time versus di F /dt (typical values) t FR (ns) di F /dt(a/µs) I F =1 A T j = Figure 14. Thermal resistance versus lead length (DO-41) R th ( /W) R th(j-a) R th(j-l) L leads (mm) DO Figure 15. Thermal resistance junction to ambient versus lead length, DO-15 Figure 16. Thermal resistance junction to ambient versus copper surface under each lead, SMA, SMB, (epoxy FR4, copper thickness = 35 µm) 1 R th(j-a) ( /W) DO-15 1 R th(j-a) ( /W) SMA SMB 4 4 L leads (mm) S U (cm²) DocID14749 Rev 2 5/
6 Package information STTH1R4 2 Package information Epoxy meets UL94, V ooling method: by conduction () In order to meet environmental requirements, ST offers these devices in different grades of EOPAK packages, depending on their level of environmental compliance. EOPAK specifications, grade definitions and product status are available at: EOPAK is an ST trademark. 2.1 DO-14 (plastic) package information Table 6. DO-41 (plastic) dimensions Dimensions Ref. Millimeters Inches ØD ØB Min. Max. Min. Max. A A B D DO-15 package information Table 7. DO-15 dimensions Dimensions A Ref. Millimeters Inches D B Min. Max. Min. Max. A B D / DocID14749 Rev 2
7 STTH1R4 Package information 2.3 SMA package information Table 8. SMA dimensions E1 Ref. Dimensions Millimeters Inches Min. Max. Min. Max. D A A E b c A1 D L A2 b E E L Figure 17. Footprint, dimensions in mm (inches) (.55) (.3) (.55) 1.64 (.64) 5.43 (.214) DocID14749 Rev 2 7/
8 Package information STTH1R4 2.4 SMB package information Table 9. SMB dimensions E1 Ref. Dimensions Millimeters Inches Min. Max. Min. Max. D A E L A1 A2 b A b c D E E L Figure 18. Footprint, dimensions in mm (inches) (.64) (.2) 1.62 (.64) 2.18 (.86) 5.84 (.3) 8/ DocID14749 Rev 2
9 STTH1R4 Ordering information 3 Ordering information Table. Ordering information Order code Marking Package Weight Base qty Delivery mode STTH1R4 STTH1R4 DO g Ammopack STTH1R4RL STTH1R4 DO g 5 Tape and reel STTH1R4Q STTH1R4Q DO-15.4 g Ammopack STTH1R4QRL STTH1R4Q DO-15.4 g 6 Tape and reel STTH1R4A HR4 SMA.68 g 5 Tape and reel STTH1R4U BR4 SMB.12 g 25 Tape and reel 4 Revision history Table 11. Document revision history Date Revision Description of changes 3-May-8 1 First issue 12-Nov-15 2 Updated Figure 3, Figure 4, Figure 5 and Figure 6. Minor text changes. DocID14749 Rev 2 9/
10 STTH1R4 IMPORTANT NOTIE PLEASE READ AREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 15 STMicroelectronics All rights reserved / DocID14749 Rev 2
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