STTH1R04. Ultrafast recovery diode. Description. Features

Size: px
Start display at page:

Download "STTH1R04. Ultrafast recovery diode. Description. Features"

Transcription

1 STTH1R4 Ultrafast recovery diode Datasheet - production data DO-41 STTH1R4 A K DO-15 STTH1R4Q Band indicates cathode side. Description The STTH1R4 series uses ST's new 4 V planar Pt doping technology. The STTH1R4 is specially suited for switching mode base drive and transistor circuits. Packaged in axial and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Table 1. Device summary SMA STTH1R4A SMB STTH1R4U I F(AV) V RRM 1 A 4 V T j (max) 175 Features Negligible switching losses Low forward and reverse recovery times High junction temperature V F (typ) t rr (typ).9 V 14 ns November 15 DocID14749 Rev 2 1/ This is information on a product in full production.

2 haracteristics STTH1R4 1 haracteristics Table 2. Absolute ratings (limiting values at 25, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V DO-41 T lead = I F(AV) Average forward current, δ =.5 DO-15 T lead = 5 SMA T lead = A SMB T lead = 14 I FSM Surge non repetitive forward current t p = ms Sinusoidal 3 A T stg Storage temperature range -65 to +175 T j Maximum operating junction temperature (1) On infinite heatsink with mm lead length Table 3. Thermal parameters Symbol Parameter Value Unit R th(j-l) R th(j-l) Junction to lead Junction to lead Lead length = mm on infinite heatsink DO DO-15 5 SMA 35 SMB 25 /W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit I R (1) Reverse leakage current T j = 25 5 V R = V RRM T j = µa T j = V F (2) Forward voltage drop T j = I F = 1. A V T j = Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P =.9 x I F(AV) +.25 x I F 2 (RMS) 2/ DocID14749 Rev 2

3 STTH1R4 haracteristics Table 5. Dynamic characteristics (T j = 25 unless otherwise stated) Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery time I F = 1 A, di F /dt = -5 A/µs, V R = 3 V, T j = 25 I F = 1 A, di F /dt = - A/µs, V R = 3 V, T j = ns I RM Reverse recovery current I F = 1 A, di F /dt = - A/µs, V R = 3 V, T j = A t fr Forward recovery time I F = 1 A di F /dt = A/µs V FR = 1.1 x V Fmax, T j = 25 5 ns V FP Forward recovery voltage I F = 1 A di F /dt = A/µs 3.5 V 1.6 P(W) Figure 1. onduction losses versus average forward current Figure 2. Forward voltage drop versus forward current 5 I FM (A) 1.4 δ=.5 δ=.1 δ=.2 δ=.5 δ= T J =15 (Maximum values) IF(AV) (A) δ=tp/t tp T T J =15 (Typical values) T J =25 (Maximum values) V FM (V) Figure 3. Relative variation of thermal impedance junction to lead versus pulse duration (DO-41) Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration (DO-15) 1..9 Z th(j-a) /R th(j-a) DO-41 L leads =mm 1..9 Z th(j -a) /R th(j -a) DO-1 5 L leads =mm Single pulse t P (s). 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3.2 Single pulse.1 t P (s). 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 DocID14749 Rev 2 3/

4 haracteristics STTH1R4 Figure 5. Relative variation of thermal impedance junction to lead versus pulse duration, SMA Figure 6. Relative variation of thermal impedance junction to lead versus pulse duration, SMB Z th(j-a) /R th(j-a) 1. SMA.9 S cu=1cm Single pulse.1 t P (s). 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Z th(j-a) /R th(j-a) 1. SMB.9 S cu =1cm² Single pulse.1 t P (s). 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Figure 7. Junction capacitance versus reverse voltage applied (typical values) Figure 8. Reverse recovery charges versus di F /dt (typical values) (pf) F=1MHz V OS =3mV RMS T j = Q RR (n) I F = 1 A V R =3 V T j =125 1 V R (V) 1 8 T j =25 4 di F /dt(a/µs) Figure 9. Reverse recovery time versus di F /dt (typical values) t RR (ns) T j =125 T j =25 di F /dt(a/µs) I F = 1 A V R =3 V Figure. Peak reverse recovery current versus di F /dt (typical values) I RM (A) I F = 1 A V R =3 V T j =125 T j =25 di F /dt(a/µs) 4/ DocID14749 Rev 2

5 STTH1R4 haracteristics Figure 11. Relative variations of dynamic parameters versus junction temperature Figure 12. Transient peak forward voltage versus di F /dt (typical values) Q RR ;I RM [T j ]/Q j RR ;I RM [T j =125 ] j I F = 1 A V R =3 V I RM Q RR V Fp (V) I F =1 A T j =125.2 T j ( ) di F /dt(a/µs) Figure 13. Forward recovery time versus di F /dt (typical values) t FR (ns) di F /dt(a/µs) I F =1 A T j = Figure 14. Thermal resistance versus lead length (DO-41) R th ( /W) R th(j-a) R th(j-l) L leads (mm) DO Figure 15. Thermal resistance junction to ambient versus lead length, DO-15 Figure 16. Thermal resistance junction to ambient versus copper surface under each lead, SMA, SMB, (epoxy FR4, copper thickness = 35 µm) 1 R th(j-a) ( /W) DO-15 1 R th(j-a) ( /W) SMA SMB 4 4 L leads (mm) S U (cm²) DocID14749 Rev 2 5/

6 Package information STTH1R4 2 Package information Epoxy meets UL94, V ooling method: by conduction () In order to meet environmental requirements, ST offers these devices in different grades of EOPAK packages, depending on their level of environmental compliance. EOPAK specifications, grade definitions and product status are available at: EOPAK is an ST trademark. 2.1 DO-14 (plastic) package information Table 6. DO-41 (plastic) dimensions Dimensions Ref. Millimeters Inches ØD ØB Min. Max. Min. Max. A A B D DO-15 package information Table 7. DO-15 dimensions Dimensions A Ref. Millimeters Inches D B Min. Max. Min. Max. A B D / DocID14749 Rev 2

7 STTH1R4 Package information 2.3 SMA package information Table 8. SMA dimensions E1 Ref. Dimensions Millimeters Inches Min. Max. Min. Max. D A A E b c A1 D L A2 b E E L Figure 17. Footprint, dimensions in mm (inches) (.55) (.3) (.55) 1.64 (.64) 5.43 (.214) DocID14749 Rev 2 7/

8 Package information STTH1R4 2.4 SMB package information Table 9. SMB dimensions E1 Ref. Dimensions Millimeters Inches Min. Max. Min. Max. D A E L A1 A2 b A b c D E E L Figure 18. Footprint, dimensions in mm (inches) (.64) (.2) 1.62 (.64) 2.18 (.86) 5.84 (.3) 8/ DocID14749 Rev 2

9 STTH1R4 Ordering information 3 Ordering information Table. Ordering information Order code Marking Package Weight Base qty Delivery mode STTH1R4 STTH1R4 DO g Ammopack STTH1R4RL STTH1R4 DO g 5 Tape and reel STTH1R4Q STTH1R4Q DO-15.4 g Ammopack STTH1R4QRL STTH1R4Q DO-15.4 g 6 Tape and reel STTH1R4A HR4 SMA.68 g 5 Tape and reel STTH1R4U BR4 SMB.12 g 25 Tape and reel 4 Revision history Table 11. Document revision history Date Revision Description of changes 3-May-8 1 First issue 12-Nov-15 2 Updated Figure 3, Figure 4, Figure 5 and Figure 6. Minor text changes. DocID14749 Rev 2 9/

10 STTH1R4 IMPORTANT NOTIE PLEASE READ AREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 15 STMicroelectronics All rights reserved / DocID14749 Rev 2

DO-15 DO-201AD STTH3R04Q STTH3R04

DO-15 DO-201AD STTH3R04Q STTH3R04 STTH3R4 Ultrafast recovery diode Features Negligible switching losses Low forward and reverse recovery times High junction temperature Description The STTH3R4 series uses ST's new 4 V planar Pt doping

More information

STTH5L06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH5L06. Turbo 2 ultrafast high voltage rectifier. Description. Features Turbo 2 ultrafast high voltage rectifier Description Datasheet - production data The STTH5L06 is developed using St's Turbo 2 600 V technology. It is well-suited as a boost diode, especially for use in

More information

STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features

STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features STTH1LCD6 Turbo 2 ultrafast - high voltage rectifier for flat panel displays Description Datasheet - production data The STTH1LCD6 uses ST Turbo 2 technology. This device is suited for power applications

More information

STTH8R06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH8R06. Turbo 2 ultrafast high voltage rectifier. Description. Features Turbo 2 ultrafast high voltage rectifier Description Datasheet - production data The STTH8R06, which uses ST Turbo 2 600 V technology, is specially suited as boost diode in continuous mode power factor

More information

STTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features STTH6SW3C Turbo 2 ultrafast high voltage rectifier A1 A2 K Description Datasheet production data The STTH6SW3C uses ST Turbo 2 3 V technology. It is especially suited to be used for DC/DC and DC/AC converters

More information

STTH10R04. High efficiency rectifier. Description. Features

STTH10R04. High efficiency rectifier. Description. Features STTH1R4 High efficiency rectifier Datasheet - production data Features K A A NC D 2 PAK K Ultrafast recovery Low power losses High surge capability Low leakage current High junction temperature ECOPACK

More information

STPS1045B. Power Schottky rectifier. Description. Features

STPS1045B. Power Schottky rectifier. Description. Features Power Schottky rectifier Datasheet production data Description High voltage Schottky rectifier suited for switch mode power supply and other power converters. Packaged in DPAK, this device is intended

More information

STPS2H V power Schottky rectifier. Datasheet. Features. Description. Negligible switching losses

STPS2H V power Schottky rectifier. Datasheet. Features. Description. Negligible switching losses Datasheet 100 V power Schottky rectifier Features A Negligible switching losses A High junction temperature capability Low leakage current K SMA K SMB Good trade-off between leakage current and forward

More information

STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB

STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB Ultrafast recovery diode Main product characteristics I F(AV) 2 X 8 A A1 A2 K V RRM 4 V T j 175 C V F (typ) t rr (typ).9 V 25 ns A1 K A2 A1 A2 K Features and benefits TO-22AB T TO-22FPAB FP Very low switching

More information

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes STTH6R4 Ultrafast recovery diode Main product characteristics I F(AV) 6 A V RRM T j 4 V 175 C A K V F (typ).95 V t rr (typ) 31 ns Features and benefits Very low switching losses High frequency and/or high

More information

STTH16L06C-Y. Automotive turbo 2 ultrafast high voltage rectifier. Description. Features

STTH16L06C-Y. Automotive turbo 2 ultrafast high voltage rectifier. Description. Features STTH16L6C-Y Automotive turbo 2 ultrafast high voltage rectifier Description Datasheet - production data A1 A2 K The STTH16L6C-Y is developed using ST s Turbo 2 6 V technology. It s specially suited for

More information

STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1

STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1 STTH61R4TV Ultrafast recovery diode Main product characteristics I F(AV) 2 x 3 A V RRM 4 V T j V F (typ) 15 C.95 V t rr (typ) 24 ns Features and benefits Ultrafast Very low switching losses High frequency

More information

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C

More information

Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant

Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant Datasheet 60 V - 1 power Schottky rectifier K Features Negligible switching losses K SM K DO-41 Low forward voltage drop Surface mount miniature packages valanche rated ECOPCK 2 compliant K STmite flat

More information

Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant Datasheet 100 V, 30 A power Schottky rectifier Features Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

More information

STTH212RL. High voltage ultrafast diode. Main product characteristics. Features and benefits. Order codes. Description DO-201AD STTH212

STTH212RL. High voltage ultrafast diode. Main product characteristics. Features and benefits. Order codes. Description DO-201AD STTH212 High voltage ultrafast diode Main product characteristics I F(AV) 2 A A K V RRM 12 V T j 175 C V F (typ) 1. V t rr (max) Features and benefits Low forward voltage drop High reliability High surge current

More information

STTH3R06RL TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER. Table 1: Main Product Characteristics I F(AV) V RRM

STTH3R06RL TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER. Table 1: Main Product Characteristics I F(AV) V RRM STTH3R6 TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER Table 1: Main Product Characteristics I (AV) V RRM 3 A 6 V I R (max) 1 µa T j 175 C V (typ) 1. V t rr (typ) 35 ns A K EATURES AND BENEITS Ultrafast switching

More information

STTH3002. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes K DOP3I STTH3002PI DO-247 STTH3002W

STTH3002. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes K DOP3I STTH3002PI DO-247 STTH3002W Ultrafast recovery diode Main product characteristics I F(V) 3 K V RRM 2 V T j (max) 175 C V F (typ).77 V t rr (typ) 22 ns Features and benefits Very low conduction losses Negligible switching losses K

More information

STTH15L06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH15L06. Turbo 2 ultrafast high voltage rectifier. Description. Features STTH15L6 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description K A K A The STTH15L6, which is using ST Turbo 2 6 V technology, is specially suited for use in switching power

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER Main product characteristics

More information

Description. Table 1. Device summary (1) Lead finish

Description. Table 1. Device summary (1) Lead finish Aerospace 45 V power Schottky rectifier Datasheet - production data Description A K K his power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products.

More information

STTH6006W. Turbo 2 ultrafast - high voltage rectifier. Features and benefits. Description. Main product characteristics

STTH6006W. Turbo 2 ultrafast - high voltage rectifier. Features and benefits. Description. Main product characteristics Turbo 2 ultrafast - high voltage rectifier Table 1. Main product characteristics I (AV) 6 A A K V RRM 6 V T j 175 C V (typ) 1.1 V t rr (max) 6 ns A eatures and benefits Ultrafast switching Low reverse

More information

STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP

STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP Ultrafast recovery - high voltage diode Main product characteristics I F(AV) V RRM T j V F (typ) t rr (typ) Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High

More information

T610T-8FP. 6 A logic level Triac. Description. Features. Applications

T610T-8FP. 6 A logic level Triac. Description. Features. Applications 6 A logic level Triac Description Datasheet production data Available in through-hole fullpack package, the Triac can be used for the on/off or phase angle control function in general purpose AC switching.

More information

STTH312B. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Description. Order codes

STTH312B. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Description. Order codes STTH31 Ultrafast recovery - 1 V diode Main product characteristics I (AV) 3 A V RRM 1 V T j 175 C V (typ) 1.15 V t rr (typ) 55 ns K A K eatures and benefits Ultrafast, soft recovery Very low conduction

More information

STTH6004W. Ultrafast high voltage rectifier. Table 1: Main product characteristics I F(AV) 60 A V RRM. 400 V T j (max) 175 C V F (typ)

STTH6004W. Ultrafast high voltage rectifier. Table 1: Main product characteristics I F(AV) 60 A V RRM. 400 V T j (max) 175 C V F (typ) STTH64W Ultrafast high voltage rectifier Table 1: Main product characteristics I F(AV) 6 A V RRM 4 V T j (max) 175 C V F (typ).83 V t rr (max) 5 ns Features and benefits Ultrafast switching Low reverse

More information

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D Datasheet Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package TAB Features Order code V DS R DS(on) max. I D 1 H2PAK-7 7 SCTH90N65G2V-7 650 V 25 mω 90 A Very high operating

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) STTH124TV1 Ultrafast high voltage rectifier Table 1: Main product characteristics I F(AV) 2 x 6 A V RRM 4 V T j (max) 15 C V F (typ) t rr (max) Features and benefits Ultrafast switching Low reverse current

More information

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER STTH TURBO ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM FEATURES AND BENEFITS Ultrafast switching Low reverse recovery current A V Tj (max) 7 C V F (max) trr (max). V ns

More information

Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 150 V I F(RMS) RMS forward voltage 15 A

Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 150 V I F(RMS) RMS forward voltage 15 A Power Schottky rectifier Main product characteristics I F(AV) V RRM j (max) V F (max) 3 A 15 V 175 C.67 V Description 15 V Power Schottky rectifier are suited for switch mode power supplies on up to 24

More information

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications. Datasheet Silicon carbide Power MOSFET 12 V, 12 A, 52 mω (typ., T J = 15 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature

More information

BAR42FILM BAR43FILM SMALL SIGNAL SCHOTTKY DIODE. Table 1: Main Product Characteristics I F(AV) 0.1 A V RRM. 30 V T j 150 C 0.33 and 0.

BAR42FILM BAR43FILM SMALL SIGNAL SCHOTTKY DIODE. Table 1: Main Product Characteristics I F(AV) 0.1 A V RRM. 30 V T j 150 C 0.33 and 0. BR42FILM BR43FILM SMLL SIGNL SCHOTTY DIODE Table 1: Main Product Characteristics I F(V) 0.1 V RRM 30 V T j 150 C V F (max) 0.33 and 0.40 V FETURES ND BENEFITS Very small conduction losses Negligible switching

More information

STTH5L06RL. Turbo 2 ultrafast high voltage rectifier. Main product characteristics. Features and benefits. Order codes.

STTH5L06RL. Turbo 2 ultrafast high voltage rectifier. Main product characteristics. Features and benefits. Order codes. STTH5L6 Turbo 2 ultrafast high voltage rectifier Main product characteristics K I (V) 5 V RRM 6 V I R (max) 125 µ / 15 µ T j (max) 175 C V (max) 1.5 V K TO-22C STTH5L6D K TO-22PC STTH5L6P t rr (max) 95

More information

STTH12R06. Turbo 2 ultrafast high voltage rectifier. Features. Description

STTH12R06. Turbo 2 ultrafast high voltage rectifier. Features. Description STTH12R6 Turbo 2 ultrafast high voltage rectifier eatures Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching losses Package insulation voltage: TO22C ins: 25 V RMS

More information

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features. Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 V(typ.) @ I C = 4 A Co-packaged

More information

STPS1L40M LOW DROP POWER SCHOTTKY RECTIFIER. Table 1: Main Product Characteristics I F(AV) V RRM. 1 A 40 V T j (max) 150 C V F (max) 0.

STPS1L40M LOW DROP POWER SCHOTTKY RECTIFIER. Table 1: Main Product Characteristics I F(AV) V RRM. 1 A 40 V T j (max) 150 C V F (max) 0. LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics I F(AV) V RRM 1 A 40 V T j (max) 150 C V F (max) 0 V C A FEATURES AND BENEFITS Very small conduction losses Negligible switching

More information

STPS20M60S. Power Schottky rectifier. Features. Description. High current capability Avalanche rated Low forward voltage drop High frequency operation

STPS20M60S. Power Schottky rectifier. Features. Description. High current capability Avalanche rated Low forward voltage drop High frequency operation Power Schottky rectifier Features High current capability valanche rated Low forward voltage drop High frequency operation Description The is a single Schottky diode, suited for high frequency switch mode

More information

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER STTH5R6 TURBO 2 ULTRST HIGH VOLTGE RECTIIER Table 1: Main Product Characteristics I (V) 5 V RRM 6 V T j 175 C V (typ) 1.4 V t rr (max) 4 ns ETURES ND BENEITS Ultrafast switching Low reverse recovery current

More information

STTH1210G. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Description. Order codes K TO-220AC STTH1210D

STTH1210G. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Description. Order codes K TO-220AC STTH1210D STTH12 Ultrafast recovery - high voltage diode Main product characteristics I F(V) 12 K V RRM V T j 175 C V F (typ) 1.3 V t rr (typ) 48 ns Features and benefits Ultrafast, soft recovery Very low conduction

More information

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj Features TAB D 2 PAK 2 1 3 TAB 2 1 DPAK 3 AEC-Q101 qualified SCIS energy of 320 mj @ T J = 25 C Parts

More information

Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel

Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel Automotive-grade 390 V internally clamped IGBT E SCIS 180 mj Features Datasheet - production data TAB DPAK 1 3 AEC-Q101 qualified 180 mj of avalanche energy @ T C = 150 C, L = 3 mh ESD gate-emitter protection

More information

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER Table 1: Main Product Characteristics I (AV) Up to 2 x A V RRM 6 V T j 175 C V (typ).95 V t rr (max) 55 ns EATURES AND BENEITS Ultrafast switching Low reverse current

More information

ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications

ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications Very low quiescent current dual voltage regulator Description Datasheet - production data Features DFN8 (5x6 mm) V O1 : fixed V O2 : adjustable from 1.25 to V I - V DROP Guaranteed current of output 1:

More information

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 2 ACPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology

More information

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACEPACK 2 converter inverter brake, 12 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake

More information

T810H. High temperature 8 A sensitive TRIACs. Features. Applications. Description. Medium current TRIAC

T810H. High temperature 8 A sensitive TRIACs. Features. Applications. Description. Medium current TRIAC T8H High temperature 8 A sensitive TRIACs Features Medium current TRIAC Logic level sensitive TRIAC 5 C max. T j turn-off commutation G Clip bounding A RoHS (22/95/EC) compliant packages Applications The

More information

STPS1545. Power Schottky rectifier. Main product characteristics. Features and Benefits. Description 15 A 45 V

STPS1545. Power Schottky rectifier. Main product characteristics. Features and Benefits. Description 15 A 45 V Power Schottky rectifier Main product characteristics I F(V) V RRM T j (max) V F (max) Features and Benefits Very small conduction losses Negligible switching losses Extremely fast switching Insulated

More information

ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACEPACK 2 converter inverter brake, 12 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK TM 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Converter inverter brake

More information

A1P50S65M2. ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC. Datasheet. Features.

A1P50S65M2. ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC. Datasheet. Features. Datasheet ACPACK 1 sixpack topology, 65 V, 5 A trench gate field-stop IGBT M series, soft diode and NTC Features ACPACK 1 ACPACK 1 power module DBC Cu Al 2 O 3 Cu Sixpack topology 65 V, 5 A IGBTs and diodes

More information

ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC

ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC Datasheet ACEPACK 1 converter inverter brake, 12 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 1 ACEPACK 1 power module DBC Cu Al 2 O 3 Cu Converter inverter brake topology

More information

STPS2030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS. 2x10A 30 V Tj (max) 150 C

STPS2030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS. 2x10A 30 V Tj (max) 150 C STPS23CT/CG/CR LOW DROP POWER SCHOTTY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I F(AV) V RRM 2xA 3 V Tj (max) 5 C V F (max).4 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES

More information

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50

More information

FEATURES. Heatsink. 1 2 Pin 1 Pin 2

FEATURES. Heatsink. 1 2 Pin 1 Pin 2 Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low

More information

Hyperfast Rectifier, 8 A FRED Pt

Hyperfast Rectifier, 8 A FRED Pt Hyperfast Rectifier, 8 A FRED Pt L TO-0 FullPAK Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 8 A V R 600 V V F at I F.3 V t rr typ. 8 ns T J max. 75 C Package L TO-0 FullPAK Circuit configuration Single

More information

Description. Part numbers. AB version C version Output voltage LD2980ABM30TR LD2980ABM33TR LD2980CM33TR 3.3 V LD2980ABM50TR LD2980CM50TR 5.

Description. Part numbers. AB version C version Output voltage LD2980ABM30TR LD2980ABM33TR LD2980CM33TR 3.3 V LD2980ABM50TR LD2980CM50TR 5. Features SOT23-5L Stable with low ESR ceramic capacitors Ultra low dropout voltage (0.12 V typ. at 50 ma load, 7 mv typ. at 1 ma load) Very low quiescent current (80 µa typ. at no load in on mode; max

More information

STPS3L60/Q/U POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 60 V Tj (max) 150 C DO-15 STPS3L60Q DO-201AD STPS3L60

STPS3L60/Q/U POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 60 V Tj (max) 150 C DO-15 STPS3L60Q DO-201AD STPS3L60 SPS3L6/Q/U POWER SCHOKY RECIFIER MAIN PRODUC CHARACERISICS I F(AV) V RRM 3A 6 V j (max) 5 C V F (max).6 V FEAURES AND BENEFIS NEGLIGIBLE SWICHING LOSSES LOW HERMAL RESISANCE AVALANCHE CAPABILIY SPECIFIED

More information

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at I F = 5.0 A 2 TMBS esmp Series SMPD (TO-263AC) Top View PIN PIN 2 K K Bottom View HEATSINK FEATURES Trench MOS Schottky technology

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER STTH8L6D/FP TURBO 2 ULTRFST HIGH VOLTGE RECTIFIER MIN PRODUCT CHRCTERISTICS I F(V) V RRM 8 6 V I R (max) 2 µ Tj (max) 75 C V F (max).5 V trr (max) 5 ns FETURES ND BENEFITS Ultrafast switching Low reverse

More information

Small Signal Fast Switching Diode FEATURES

Small Signal Fast Switching Diode FEATURES Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching

More information

STPS41L45CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER. MAIN PRODUCTS CHARACTERISTICS 2x20A 45 V Tj (max) 150 C

STPS41L45CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER. MAIN PRODUCTS CHARACTERISTICS 2x20A 45 V Tj (max) 150 C STPS41L45CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER MIN PRODUCTS CHRCTERISTICS I F(V) V RRM 2x2 45 V Tj (max) 15 C V F (max).47 V 2 K FETURES ND BENEFITS VERY SMLL CONDUCTION LOSSES NEGLIGIBLE SWITCHING

More information

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High

More information

Dual rugged ultrafast rectifier diode, 20 A, 150 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.

Dual rugged ultrafast rectifier diode, 20 A, 150 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. Rev. 04 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High reverse

More information

Hyperfast Rectifier, 1 A FRED Pt

Hyperfast Rectifier, 1 A FRED Pt Hyperfast Rectifier, 1 A FRED Pt SMF (DO-219AB) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 17 C maximum operating junction temperature Low forward voltage drop Low

More information

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY ULTRST RECTIIER PP ENERGY RECOVERY Table 1: Main Product Characteristics I (V) V RRM V P (typ) I RM (typ) 6 3 V 2.5 V 6 T j 175 C V (typ).9 V K ETURES N BENEITS Ultrafast recovery allowing High Sustain

More information

STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 8A 300 V I RM (typ.) Tj (max) 175 C TO-220AC STTH8R03D

STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 8A 300 V I RM (typ.) Tj (max) 175 C TO-220AC STTH8R03D STTH8R3G/D 3V HYPERFST RECTIFIER MJOR PRODUCT CHRCTERISTICS I F(V) V RRM 8 3 V I RM (typ.) 4 Tj (max) 175 C V F (max) 1.3 V trr (max) 3 ns FETURES ND BENEFITS Designed for high frequency applications.

More information

STPS30SM100S. Power Schottky rectifier. Features. Description

STPS30SM100S. Power Schottky rectifier. Features. Description Power Schottky rectifier Features High current capability valanche rated Low forward voltage drop current High frequency operation Insulated package: Insulation voltage 2000 V rms Package capacitance =

More information

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BYV34 300 400

More information

PINNING - SOT199 PIN CONFIGURATION SYMBOL. case a1

PINNING - SOT199 PIN CONFIGURATION SYMBOL. case a1 GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency, SYMBOL PARAMETER MAX. MAX. MAX. UNIT dual, rectifier diodes in a full pack, plastic envelope, featuring low BYV72F 5 2 forward

More information

PINNING - SOT186 PIN CONFIGURATION SYMBOL

PINNING - SOT186 PIN CONFIGURATION SYMBOL GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency, SYMBOL PARAMETER MAX. MAX. MAX. UNIT dual, rectifier diodes in a full pack, plastic envelope, featuring low BYV32F- 0 50 200

More information

LD A high PSRR ultra low drop linear regulator with reverse current protection. Datasheet. Features. Applications.

LD A high PSRR ultra low drop linear regulator with reverse current protection. Datasheet. Features. Applications. Datasheet 2 A high PSRR ultra low drop linear regulator with reverse current protection Features Input voltage from 1.25 V to 6. V Ultra low drop: 13 mv (typ.) at 2 A load 1 % output accuracy at 25 C,

More information

PINNING - TO220AC PIN CONFIGURATION SYMBOL. tab

PINNING - TO220AC PIN CONFIGURATION SYMBOL. tab GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope, featuring low forward voltage drop, BYV79-0 50 200

More information

8ETU04 8ETU04S 8ETU04-1

8ETU04 8ETU04S 8ETU04-1 8ETU04 8ETU04S 8ETU04- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 60ns I F(AV) = 8Amp V R = 400V Description/

More information

thinq! SiC Schottky Diode

thinq! SiC Schottky Diode SDT12S6 Silicon Carbide Schottky Diode Worlds first 6V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the

More information

PINNING - SOD100 PIN CONFIGURATION SYMBOL. case

PINNING - SOD100 PIN CONFIGURATION SYMBOL. case F-15 GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope, featuring fast forward V RRM Repetitive peak reverse

More information

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline MURD60CT Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications

More information

VNH9013Y. Automotive integrated H-bridge. Description. Features

VNH9013Y. Automotive integrated H-bridge. Description. Features Automotive integrated H-bridge Features PowerSSO-36 TP Description Datasheet - production data The device is an automotive integrated H-bridge intended for a wide range of automotive applications driving

More information

Surface Mount ESD Capability Rectifiers

Surface Mount ESD Capability Rectifiers Surface Mount ESD Capability Rectifiers Top View esmp TM Series MicroSMP Bottom View PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 00 V, 200 V, 400 V, 600 V I FSM 20 A V F at I F =.0 A 0.925 V I R µa T J max.

More information

LDL212. High PSRR, low drop linear regulator IC. Datasheet. Features. Applications. Description

LDL212. High PSRR, low drop linear regulator IC. Datasheet. Features. Applications. Description Datasheet High PSRR, low drop linear regulator IC Features Input voltage from 2.5 V to 18 V 2 V AMR Any fixed output voltages, from 1.2 V to 12 V in 1 mv steps (from 1.2 V to 6.6 V in 5 mv steps) available

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

Surge non repetitive forward current I FSM 78 I FRM 47. P tot Operating and storage temperature T j, T stg

Surge non repetitive forward current I FSM 78 I FRM 47. P tot Operating and storage temperature T j, T stg Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 18 A V F 1.65 V

More information

IDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C

IDB30E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM

More information

VNL5090N3-E, VNL5090S5-E

VNL5090N3-E, VNL5090S5-E OMNIFET III fully protected low-side driver Datasheet - production data 2 Features Type V clamp R DS(on) I D VNL5090N3-E VNL5090S5-E 1 2 SOT-223 3 SO-8 41 V 90 mω 13 A Automotive qualified Drain current:

More information

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7

More information

K G. Order code 400 V 600 V Min. Max. P0111MA 1AA3 X 4 µa 25 µa TO-92. P0111MN 5AA4 X 4 µa 25 µa SOT-223. P0115DA 5AL3 X 15 µa 50 µa TO-92

K G. Order code 400 V 600 V Min. Max. P0111MA 1AA3 X 4 µa 25 µa TO-92. P0111MN 5AA4 X 4 µa 25 µa SOT-223. P0115DA 5AL3 X 15 µa 50 µa TO-92 Sensitive high immunity SCRs up to.8 Features I T(RMS) up to.8 V DRM /V RRM and 6 V I GT from.5 to 5 µ G K Description Thanks to highly sensitive triggering levels, the P11xx SCR series is suitable for

More information

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY STTH40P03S ULTRST RECTIIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics I (V) 40 V RRM 300 V V P (typ) 2.5 V I RM (typ) 5 T j 175 C V (typ) 0.9 V ETURES ND BENEITS Ultrafast recovery allowing

More information

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3   High Voltage Trench MOS Barrier Schottky Rectifier V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier VP0 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height

More information

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3   High Voltage Trench MOS Barrier Schottky Rectifier V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward

More information

MUR1620CT MURB1620CT MURB1620CT-1

MUR1620CT MURB1620CT MURB1620CT-1 Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature MUR60CT MURB60CT MURB60CT- t rr = 5ns I F(AV) = 6Amp V R = 00V Description/

More information

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT rugged dual rectifier diodes in a plastic envelope, featuring low BYV32E- 0 200 forward voltage

More information

ESDAULC5-1BF4. Low clamping and ultra low capacitance single line bidirectional ESD protection. Applications. Description.

ESDAULC5-1BF4. Low clamping and ultra low capacitance single line bidirectional ESD protection. Applications. Description. Low clamping and ultra low capacitance single line bidirectional ESD protection Applications Datasheet - production data Where transient over voltage protection in ESD sensitive equipment is required,

More information

PINNING - TO220AC PIN CONFIGURATION SYMBOL. tab

PINNING - TO220AC PIN CONFIGURATION SYMBOL. tab BY359-15 GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a plastic envelope featuring low forward voltage drop, V RRM Repetitive

More information

30ETH06 30ETH06S 30ETH06-1

30ETH06 30ETH06S 30ETH06-1 Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Dual Diode Center Tap 30ETH06 30ETH06S 30ETH06- t rr = 8ns typ.

More information

PINNING - TO220AC PIN CONFIGURATION SYMBOL. tab

PINNING - TO220AC PIN CONFIGURATION SYMBOL. tab -5 GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a plastic envelope, featuring fast forward recovery and V RRM Repetitive peak

More information

MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline

MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline Ultrafast Rectifier MUR300WT Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature BASE COMMON CATHODE 3 ANODE COMMON ANODE CATHODE t rr = 35ns

More information

Part Ordering code Type Marking Remarks 1N4148 1N4148-TAP or 1N4148-TR V4148 Ammopack/tape and reel

Part Ordering code Type Marking Remarks 1N4148 1N4148-TAP or 1N4148-TR V4148 Ammopack/tape and reel Small Signal Fast Switching Diodes Features Silicon epitaxial planar diodes Electrically equivalent diodes: e2 N448 - N94 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

More information

High Voltage Trench MOS Barrier Schottky Rectifier

High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00

More information