STTH3002. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes K DOP3I STTH3002PI DO-247 STTH3002W
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1 Ultrafast recovery diode Main product characteristics I F(V) 3 K V RRM 2 V T j (max) 175 C V F (typ).77 V t rr (typ) 22 ns Features and benefits Very low conduction losses Negligible switching losses K DO-247 W K DOP3I PI Low forward and reverse recovery time High junction temperature Description K The uses ST's new 2 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in DO-247, DOP3I, and D²PK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. NC DPK 2 G Order codes Part Number W PI G G-TR Marking May 26 Rev 1 1/1
2 Characteristics 1 Characteristics Table 1. bsolute ratings (limiting values at T j = 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 2 V I F(RMS) RMS forward current 5 DO-247 T c = 135 C I F(V) verage forward current, δ =.5 DOP3I T c = 115 C D 2 PK T c = 135 C 3 I FSM Surge non repetitive forward current t p = 1 ms Sinusoidal 3 T stg Storage temperature range -65 to C T j Maximum operating junction temperature 175 C Table 2. Thermal parameters Symbol Parameter Value Unit DO R th(j-c) Junction to case DOP3I 1.8 C/W D 2 PK 1.2 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 25 C 2 V R = V RRM T j = 15 C 2 2 µ T j = 125 C I F = V F (2) Forward voltage drop T j = 25 C 1.5 I F = 3 T j = 15 C.8.88 V 1. Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % To evaluate the conduction losses use the following equation: P =.67 x I F(V) +.7 I F 2 (RMS) 2/1
3 Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time I F = 1, di F /dt = -2 /µs, V R = 3 V, T j = 25 C I F = 1, di F /dt = -5 /µs, V R = 3 V, T j = 25 C ns I RM Reverse recovery current I F = 3, di F /dt = 2 /µs, V R = 16 V, T j = 125 C t fr Forward recovery time I F = 3, di F /dt = 2 /µs V FR = 1.1 x V Fmax, T j = 25 C 14 ns V FP Forward recovery voltage I F = 3, di F /dt = 2 /µs, V FR = 1.1 x V Fmax, T j = 25 C 2.5 V Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus forward current (typical values) I M () 2 T 2 18 I M d=tp/t δ=tp/t tp P = 2 W P = 1 W 6 P = 5 W 6 T j =15 C T j =25 C δ 2 V FM(V) I FM () Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration I FM () 1. Z th(j-c) /R th(j-c) Single pulse D²PK T j =15 C T j =25 C 2 V FM(V) tp(s).1 1.E-3 1.E-2 1.E-1 1.E+ 3/1
4 Characteristics Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Reverse recovery charges versus di F /dt (typical values) 1 C(pF) F=1 MHz V osc =3 mv RMS T j =25 C Q RR (nc) I F = 3 V R = 16 V 2 T j =125 C 15 1 V R(V) T j =25 C di F/dt(/µs) Figure 7. Reverse recovery time versus di F /dt (typical values) Figure 8. Peak reverse recovery current versus di F /dt (typical values) 8 7 t RR (ns) I F =3 V R =16 V I RM () I F = 3 V R = 16 V 6 5 T j = 125 C T j = 25 C 8 6 T j =125 C di F/dt(/µs) T j =25 C di F/dt(/µs) Figure 9. Dynamic parameters versus junction temperature Figure 1. Thermal resistance, junction to ambient, versus copper surface under tab (Epoxy printed circuit board FR4, e cu = 35 µm) Q RR ;I RM [T j ]/Q RR ;I RM [T j =125 C] I F =3 V R = 16 V 8 7 R th(j-a) ( C/W) D²PK I RM Q RR T j( C) S CU(cm²) /1
5 Ordering information scheme 2 Ordering information scheme STTH 3 2 XXX Ultrafast switching diode verage forward current 3 = 3 Repetitive peak reverse voltage 2 = 2 V Package W = DO-247 in Tube PI = DOP3I in Tube G = D2PK in Tube G-TR = D2PK in Tape and reel 5/1
6 Package information 3 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.8 Nm Maximum torque value: 1. Nm Table 5. DO-247 dimensions DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max V D E V Dia F F H F L L5 F2 L2 L1 L4 G H L L L3 V2 F3 D L G F M E L L L M V 5 5 V2 6 6 Dia /1
7 Package information Table 6. DOP3I dimensions DIMENSIONS REF Millimeters Inches E Min. Max. Min. Max. R E1 ØP c b c G D Y c D E E L e G e b Q c1 L P Q R 4.6 typ..181 typ. Y /1
8 Package information Table 7. D 2 PK dimensions DIMENSIONS REF. Millimeters Inches Min. Max Min. Max L2 E C B L L3 1 D B C C B2 B C R D G E mm min. FLT ZONE 2 G L V2 L L M R.4 typ..16 typ. V2 8 8 Figure 11. D 2 PK footprint (dimensions in mm) In order to meet environmental requirements, ST offers these devices in ECOPCK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPCK is an ST trademark. ECOPCK specifications are available at: 8/1
9 Ordering information 4 Ordering information Part Number Marking Package Weight Base qty Delivery mode W DO g 3 Tube PI DOP3I 4.46 g 3 Tube G D 2 PK 1.48 g 5 Tube G-TR D 2 PK 1.48 g 1 Tape and reel 5 Revision history Date Revision Description of Changes 3-May-26 1 First issue 9/1
10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY N UTHORIZE REPRESENTTIVE OF ST, ST PRODUCTS RE NOT DESIGNED, UTHORIZED OR WRRNTED FOR USE IN MILITRY, IR CRFT, SPCE, LIFE SVING, OR LIFE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FILURE OR MLFUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners. 26 STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica 1/1
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