AN603 APPLICATION NOTE
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- Bridget Ryan
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1 AN603 APPLICAION NOE URBOSWICH IN A PFC BOOS CONVERER INRODUCION SMicroelecronics offers wo families of 600V ulrafas diodes (URBOSWICH"A" and "B" ) having differen compromises beween he forward characerisics and he reverse recovery characerisics. his paper explains why URBOSWICH"B" is a suiable family for PFC boos converers working in disconinuous mode, and why he URBOSWICH"A" should be used for PFC s working in coninuous mode. In his kind of applicaion, he main concern for he designer is o evaluae he power losses. For ha, S proposes a very powerful ool. A program has been developed in order o calculae he losses in he diode and in he ransisor in a PFC working in coninuous mode a a consan frequency. his applicaion noe describes how he calculaions are performed. his sofware deermines clearly ha here is an opimum MOSFE urn on di/d o increase he efficiency of he design and reduce EMI. PARAMEERS DEFINIION he basic circui of he Figure 1 shows he curren, volage and frequencies noaions used in his paper. Lis of he parameers: Vm: mains volage V M : peak value of he mains volage I L : curren in he coil I D : curren in he diode I : curren in he ransisor I P : peak curren in he coil δ D : duy cycle of he diode F C : swiching frequency V O : oupu volage F: mains frequency June 004 REV. 1/13
2 AN603 APPLICAION NOE Figure 1. Boos PFC converer noaions IL =1/F IP IL D ID L I Vm Vc C VO Vm =1/F Vc c=1/fc VM D c URBOSWICH IN A PFC BOOS CONVERER WORKING IN DISCONINUOUS MODE he disconinuous mode is used for power below W. In his mode, he curren in he diode before reaching zero A decreases very slowly (less han 1A/µs). he slope is fixed by he coil and is equal o (Vm V O )/L. he low value of his slope generaes low values of reverse recovery curren (I RM ) and herefore low swich-off losses. For his reason he forward volage (V F ) of he diode becomes he mos imporan parameer. he bes choice is o use a URBOSWICH"B" 1-A/600V. he major par of he losses is he conducion losses (P COND ). hey can be calculaed wih a good approximaion by: P COND = V F (I F(AV) ) x I F(AV) he average curren in he diode is equal o he oupu power (P OU ) divided by he oupu volage V O : I F(AV) = P OU / V O URBOSWICH IN PFC BOOS CONVERER WORKING IN CONINUOUS MODE In coninuous mode (oupu power higher han W) he curren in he diode decreases very quickly. he (di F /d) OFF of he diode is fixed by he MOS ransisor conrol and is equal o a few hundred A/µs ((di F / d) OFF of he diode is equal o he (di F /d) ON of he ransisor). he reverse recovery curren of he diode when he ransisor swiches on flows in he ransisor and generaes high urn-on losses in he ransisor. For his reason he mos imporan parameer of he diode is he I RM. he URBOSWICH"A" family represens he opimum in erm of V F /I RM compromise for his ype of applicaion and is recommended. he calculaions of he average curren, RMS curren and power losses in he diode and in he ransisor are very complex. his is why S has developed a sofware which performs calculaions and proposes he bes URBOSWICH for he applicaion. he boos converer is assumed o work in a coninuous mode /13
3 AN603 APPLICAION NOE and a a consan frequency. his developmen ool, he PFC diskee, is available in a 5¼ inches forma. he following paragraph explains how he calculaions are performed. Resuls concerning he diode Conducion losses. he curren waveform in he diode is a succession of rapezoids. he duy cycle δ Dn and he ampliude of he laer are varying as a funcion of he inpu mains volage. Figure shows he curren in he diode beween he ime nc and (n+1)c. Figure. Curren in he diode beween nc and (n+1)c IL IP n=o nc (n+1)c n=/c Il In slope:(vm-vo)/l ID I x nc (n+1- Dn)c (n+1)c δ Dn = Vmn Vo Vmn=V M sin ( Π (n+1)c ) I L = In = Ip sin ( Π (n+1)c ) x = (n+1 δ Dn )c Average curren and RMS curren in he diode he program calculaes he average and RMS curren in he diode wih he ieraive formulæ: I DAV ( ) = -- A --- CδDn ( n + δ n ) + B C δ Dn 3/13
4 AN603 APPLICAION NOE I DRMS ( ) = -- ( Cn + Dn) 1 -- wih: A N Vmn V = O L = c B In A n 1 δ = Dn c Cn = A c 3 δ 3 Dn [ 3nn ( ( + δ Dn ) + 1 δ Dn ) + δ Dn ] Dn = ABc δ Dn ( n + δ Dn ) + B cδ Dn Conducion losses in he diode he conducion losses in he diode are calculaed wih he maximum value of V O and Rd (respecively he hreshold volage and he dynamic resisance of he forward characerisic). I mus be poined ou ha hese power losses correspond o a wors case siuaion. P COND = V O I D(AV) + Rd I D(RMS) urn-on losses in he diode. hese losses are esimaed wih he formula P ON = 0.4 (V FP V F )I. F. FR F V FP : Peak forward volage FR : forward recovery ime his formula provides only an esimae, which is sufficien because urn ON losses are low wih regard o conducion losses. he program inerpolaes daa of he curve V FP and FR versus (di F /d) ON of he diode (see Figure 3). hese daa have been sored on he disk for each par number. Figure 3. V FP versus di F /d. (SA806D) 15 VFP(V) 14 90% CONFIDENCE j=15 o C 13 IF=8A dif/d(a/ s) /13
5 AN603 APPLICAION NOE Figure 4. FR versus di F /d. (SA806D) 500 fr(ns) % CONFIDENCE j=15 o C VFr=1.1*VF max. IF=8A 50 dif/d(a/ s) urn-off losses in he diode. Figure 5 shows he heorical waveform of he curren and he volage when he diode swiches off. Figure 5. Curren and volage waveform during diodes swich OFF In = IF = IL V (dif/d)off of he diode S=a/b a b IRM VO In a PFC working in a coninuous mode, he (di F /d) OFF of he diode is fixed. Bu curren (I F = I L ) acs as a funcion of he ime, as do he sofness facors and he curren I RM (see Figure 6). hese daa were also sored for each individual par number. 1 P OFF = -- VoI RMnSn di ( F d) OFF I RM n and Sn are respecively he reverse curren and sofness facor corresponding o he (di F /d) OFF of he applicaion and a he ime nc when Π( n + 1)c IF = In = Ip sin hese losses are calculaed wih daa (S, I RM ) a 90% confidence. 5/13
6 AN603 APPLICAION NOE Figure 6. I RM and S versus di F /d. (SA806D) IRM(A) % CONFIDENCE j= o C 7.5 VR=400V 5.0 IF=16A IF=8A IF=4A dif/d(a/ s) Sfacor ypical values j=15 o C IF<16A VR=400V 0. dif/d(a/ s) urn-on losses in he ransisor due o he diode. When he ransisor urns on he reverse recovery curren flows in he ransisor (see Figure 7). urn-on losses in he ransisor due o he diode are calculaed wih he same daa as he urn-off losses in he diode. he formula used is: wih: Mn I RMn( 3 + Sn) = di ( F d) OFF In I Gn RMn ( + Sn) = di ( F d) OFF P ON = Vo ( Mn + Gn) 6/13
7 AN603 APPLICAION NOE Figure 7. Curren and volage waveform during ransisor urn-on In+IRM VO In = IL = IF V I dif/don of he ransisor Juncion emperaure of he diode. S facor and I RM depend on he emperaure (see Figure 8). his program akes ino accoun hese variaions o calculae he juncion emperaure. wo opions are available: Ener case (case emperaure) or, Ener amb (ambien emperaure) and Rh (c-a) (case ambien hermal resisance). Figure 8. Relaive variaion of dynamic parameers versus juncion emperaure (SA806D) Sfacor IRM 0.6 j(oc) Resuls concerning he ransisor Conducion losses. he curren waveform in he ransisor is also a succession of N rapezoids and he duy cycle of he ransisor, and he ampliude of which varies as a funcion of he inpu main volage. Figure 9 shows he curren in he ransisor beween he ime nc and (n+1)c. 7/13
8 AN603 APPLICAION NOE Figure 9. Curren in he ransisor beween c and (n+1)c I In-1 slope:(vmn/l) I ID nc (n+1- Dn )C (n+1)c δ Dn = Vmn Vo Vmn=V M sin ( Π (n+1)c ) I n 1 = Ip sin ( Π nc ) y = (n+1 δ Dn )c y he program calculaes he average and RMS curren in he ransisor wih he formulæ. I AV ( ) = -- A( ( n+ 1 Dn ) n )c Ln I RMS ( ) = -- [ In + Jn] 1 -- wih: Vmn A = L B I n 1 A n + 1 δ Dn = c Ln = Bc( 1 δ Dn ) A In = c 3 (( n + 1 δ 3 Dn ) 3 + n 3 ) Jn = ABc (( n+ 1 δ Dn ) n ) + B c( 1 δ Dn ) 8/13
9 Conducion losses We have: P COND = rds ON I (RMS) AN603 APPLICAION NOE rds ON : rds ON of he ransisor oal urn-on losses in he ransisor. he principle of he calculaion is he same as he calculaion of urn-off losses in he diode. he formula used is: wih: P ON R ( ) = Vo Kn di [ ( F d) OFF ] ( In + I Kn RMn ) Sn I RMn Sn I RMn = In 3 EXAMPLE OF SIMULAION Daa enered in he sofware: Diode: SA006P (di F /d) OFF of he diode = 500A/µs (di/d) ON of he diode = 500A/µs F = 50Hz F C = 50kHz V M = 300V V O = 400V L = 100mH I P =0A Rds ON = 0.1W case = 60 C Resuls Diode resuls I D(AV) = 7.5A I D(RMS) = 11.8A P ON = 0.5W P OFF = 1W P COND = 11W j = 76 C P ON R(D) = 18.6W ransisor resuls I (AV) = 5.A I (RMS) = 9.1A P ON ( R ) =.6W P COND ( R ) = 8.3W 9/13
10 AN603 APPLICAION NOE OPIMUM MOSFE URN ON di/d P OFF in he diode and P ON ( R ) are he only losses depending on he (di/d) ON of he ransisor ((di/d) of he diode)). he sofware allows you o draw he curve P ON ( R ) + P OFF(D) versus he (di/d) ON of he he ransisor ((di/ d) OFF of he diode). Example: he curve in Figure 10 shows he variaion of P OFF (D) + P ON ( R ) versus he (di F /d) OFF of he diodes. We ener in he program he following daa: Diode: SA006P F = 50Hz F C = 50kHz V M = 300V V O = 400V L = 100mH C = 80 C I P = 1A his curve shows ha in order o opimize he efficiency, he designer has o fix he (di F /d) ON of he ransisor a 500A/µs. When he swiching ime decreases in he area of di/d < 500A/µs, P OFF + P ON ( R ) decreases. Bu for di F /d > 500A/µs, he increasing of I RM akes over he influence of he swiching ime and P OFF + P ON ( R ) increases. he reverse recovery of he diode produces EMI ha increases wih he di F /d. In his applicaion he bes compromise o reduce he noise and have he bes efficiency is o fix di F /d 350A/µs (P OFF (D) + P ON ( R )) a 350A/µs (P OFF (D) + P ON ( R )) a 500A/µs. Anoher way o reduce EMI produced by he diode is o overdimension he diode. Indeed he noise generaed by he diode decreases as a funcion of he juncion emperaure. CONCLUSION his paper explains why URBOSWICH"A" and URBOSWICH"B" are he righ choices of diodes respecively for PFC working in coninuous and disconinuous mode. he sofware described in he applicaion noe is now available. I can help he designer o evaluae he influence of he differen parameers (swiching frequency, coil, (di F /d) ON of he ransisor...) on he power losses in he diode and in he ransisor. his program is especially ineresing o deermine he opimum (di/d) ON of he ransisor. his will increase he efficiency of he converer and decrease noise. 10/13
11 AN603 APPLICAION NOE Figure 10. OFF losses (D) + ON losses ( R ) versus (di F /d) ON of he ransisor POFF(D)+PON(R) (W) DIODE:SA006P (FC=50kHz VM=300V VO=400V C=80 oc F=50Hz IP=1A) dif/d (A/us) 11/13
12 AN603 APPLICAION NOE REVISION HISORY able 1. Revision Hisory Dae Revision Descripion of Changes Oc Firs Issue 7-June-004 Syleshee updae. No conen change. 1/13
13 AN603 APPLICAION NOE Informaion furnished is believed o be accurae and reliable. However, SMicroelecronics assumes no responsibiliy for he consequences of use of such informaion nor for any infringemen of paens or oher righs of hird paries which may resul from is use. No license is graned by implicaion or oherwise under any paen or paen righs of SMicroelecronics. Specificaions menioned in his publicaion are subjec o change wihou noice. his publicaion supersedes and replaces all informaion previously supplied. SMicroelecronics producs are no auhorized for use as criical componens in life suppor devices or sysems wihou express wrien approval of SMicroelecronics. he S logo is a regisered rademark of SMicroelecronics. All oher names are he propery of heir respecive owners 004 SMicroelecronics - All righs reserved SMicroelecronics GROUP OF COMPANIES Ausralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Ialy - Japan - Malaysia - Mala - Morocco - Singapore - Spain - Sweden - Swizerland - Unied Kingdom - Unied Saes 13/13
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