DACO SEMICONDUCTOR CO., LTD.

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1 Nhannel Enhancement Mode MOSFET Features V SS = 9V Preliminary SOT227 S R S(ON) < 2 S Fully valanche Rated Pb Free & RoHS ompliant S solation Type Package Electrically solation base plate pplications P Backlighting Power onverters H Synchronous Rectifiers M K bsolute Maximum Ratings (Tc= unless otherwise noted) N Parameter Symbol Ratings Unit E O F rainsource Voltage V S 9 V B Q atesource Voltage V S ± V J T = rain T = rain = Note M Maximum Power issipation P W Storage Temperature Range T ST to + Operating Junction Temperature Range TJ to + Thermal Resistance, Junctiontoase R J. /W solation Voltage (.. minute) Viso V Mounting torque (M4 Screw) M d.3 Nm 38 M B E F H J K L M N O P MENSONS NHES MM MN MX MN MX Q M4*

2 Electrical TJ = (unless otherwise specified) OFF haracteristics Parameter Symbol onditions Min. Typ. Max. Unit rainsource Breakdown Voltage BV SS V S=V S=3m 9 V Zero ate Voltage rain urrent SS V S=V V S=9V u atebody Leakage SS V S=±V V S=V ± n ON haracteristics ate Threshold Voltage V TH V S=V S S=8m V rainsource OnState Resistance R S(on) V S= S=9 2 ate Resistance R Forward Transconductance g fs V S =3. =2 8 S ynamic haracteristics nput apacitance iss V S=V 268 Output apacitance oss V S=V 97 pf Reverse Transfer apacitance Switching haracteristics rss Freq.=MHz 69 TurnOn elay Time td(on) V S=4V 76 Rise Time t r V S= TurnOff elay Time td(off) S=9 7 ns Fall Time t f R = 9 Total ate harge at Q g V S=4V 4 ate to Source harge Q gs V S= S=9 ate to rain harge R = 74. Q gd n Reverse iode haracteristics rainsource iode Forward Voltage V F T J = F=38.6 V iode ontinuous Forward urrent F iode Pulsed urrent Note F,pulse Reverse Recovery time T RR F=.V R=. RR =. ns Notes:. Pulse Test: Pulse Width s, uty ycle > 2%.

3 Typical haracteristics Fig.. Maximum rain urrent vs. ase Temperature Fig. 2. Output T J = o V S = V mperes mperes 7 T egrees entigrade 7V V S Volts 9 Fig. 3. Extended Output T J = o V S = V V Fig. 4. Output T J = o V S = V mperes mperes 7V T J = o V S Volts V S Volts 6V Fig.. R S(on) Normalized to = 9 Value vs. rain urrent Fig 6. Typ. drainsource on resistance RS(on)=f(); Tj= ;parameter: VS RS(on) RS(on) mperes mperes

4 Typical haracteristics Fig. 7. nput dmittance Fig. 8. Transconductance 6 6 T J = o 4 mperes T J = o o o g f s Siemens o o V S Volts mperes Fig. 9. Forward Voltage rop of ntrinsic iode Fig.. ate harge V S = 4V = 9 = m S mperes 6 VS Volts 8 6 T J = o 4 T J = o V S Volts 4 Q Nanooulombs, Fig.. apacitance Fig. 2. ForwardBias Safe Operating rea apacitance PicoFarads,, iss oss rss mperes R S(on) Limit T J = o ms ms ms s s f = MHz T = o Single Pulse., V S Volts V S Volts

5 mp[] mp[] Typical haracteristics Fig 3. Forward derating curve of reverse diode Fig 4. Peak forward surge current of reverse diode T [ ] Fig. Maximum Transient Thermal mpedance ycles Number Of ycles t 6Hz Z(th)J K / W Pulse Width Seconds