KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description
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1 SIUTR TI T 26P//2 S I T TRSISTR eneral escription 26P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. TURS V SS = 6V, I = 2. rain-source Resistance : R S() S = 1V g(typ.) = 1.9n XIU RTI (Tc=25 ) I P 1. T 2. RI 3. SUR I I P IITRS 9.9 +_ X / _ _ _ / _ _ _ _ _ _ _.2 RTRISTI SY 26P * : rain current limited by maximum junction temperature. RTI rain-source Voltage V SS 6 V ate-source Voltage V SS 3 V rain urrent Single Pulsed valanche nergy (ote 2) Repetitive valanche nergy (ote 1) Peak iode Recovery dv/dt (ote 3) rain Power =25 I 2. = * Pulsed (ote1) I P 8. 8.* UIT S 12 m R 5.4 m dv/dt 5.5 V/ns Tc=25 P W erate above W/ aximum unction Temperature T j 15 Storage Temperature Range T stg Thermal haracteristics Thermal Resistance, unction-to-ase R th /W Thermal Resistance, ase-to-sink R ths.5 - /W Thermal Resistance, unction-to- mbient PI TI R th /W S T-22 R 1. T 2. RI 3. SUR T-22IS (1) P R 1. T 2. RI 3. SUR I R IITRS _ _ _.2.8 +_ _ _ _.2.5 +_ X _ X 1.47 X _ _ _ _.2 I IITRS 1. +_ _ _ /-.5 Φ3.2 +_ _ _ / _ _ / / _.1 P 6.8 +_ _.2 R 2.6 +_.2 S.5 Typ S T-22IS 1/7
2 26P//2 TRI RTRISTIS (Tc=25 ) Static RTRISTI SY TST ITI I. TYP. X. UIT rain-source reakdown Voltage V SS I =25, V S =V V reakdown Voltage Temperature oefficient V SS / T j I =25, Referenced to V/ rain ut-off urrent I SS V S =6V, V S =V, ate Threshold Voltage V th V S =V S, I = V ate eakage urrent I SS V S = 3V, V S =V n rain-source Resistance R S() V S =1V, I = ynamic Total ate harge g V S =48V, I =2. ate-source harge gs V S =1V (ote4,5) ate-rain harge gd Turn-on elay time t d(on) V Turn-on Rise time t =3V r R =15 Turn-off elay time t d(off) R =25 (ote4,5) Turn-off all time t f Input apacitance iss Reverse Transfer apacitance rss VS=25V, VS=V, f=1.z utput apacitance oss Source-rain iode Ratings ontinuous Source urrent I S V S <V th Pulsed Source urrent I SP iode orward Voltage V S I S =2., V S =V V Reverse Recovery Time t rr IS =2., V S =V, ns Reverse Recovery harge rr dis/dt=1/ s ote 1) Repetivity rating : Pulse width limited by junction temperature. ote 2) = 55m, I S = 2., V =5V, R =25, Starting T j = 25. ote 3) I S 2., di/dt 3/, V V SS, Starting T j = 25. ote 4) Pulse Test : Pulse width 3, uty ycle 2%. ote 5) ssentially independent of operating temperature. n ns p 2/7
3 26P//2 ig1. I - V S ig2. I - V S rain urrent I () V S TP : 15. V 1. V 8. V 7. V 6. V 5.5 V 5. V ottom : 4.5V rain urrent I () rain - Source Voltage V S (V) ate - Source Voltage V S (V) ig3. V SS - Tj ig4. R S() - I ormalized reakdown Voltage VSS V S = V I S = n - Resistance R S() (Ω) V S = 1V V S = 2V unction Temperature Tj ( ) rain urrent I () ig5. I S - V S ig6. R S() - Tj Reverse rain urrent I S () ormalized n Resistance V S = 1V I S = Source - rain Voltage V S (V) unction Temperture Tj ( ) 3/7
4 26P//2 ig7. - V S ig8. g - V S apacitance (p) 7 6 iss 5 4 oss 3 2 rss 1 requency = 1z ate - Source Voltage V S (V) I =2. V S = 12V V S = 3V V S = 48V rain - Source Voltage V S (V) ate - harge g (n) ig9. Safe peration rea ig1. Safe peration rea (26P) (26,262) rain urrent I () peration in this area is limited by R S() 1µs 1ms 1ms T c = 25 T j = 15 Single nonrepetitive pulse rain urrent I () T c = 25 T j = 15 Single nonrepetitive pulse peration in this area is limited by R S() 1 ms 1 ms 1 µs 1ms rain - Source Voltage V S (V) rain - Source Voltage V S (V) ig11. I - T j 2. rain urrent I () unction Temperature Tj ( ) 4/7
5 26P//2 ig12. Transient Thermal Response urve ormalized Transient Thermal Resistance uty= Single Pulse (26P) - uty actor, = t 1 /t 2 - Rth j-c= P t 1 t 2 TI (sec) ig13. Transient Thermal Response urve ormalized Transient Thermal Resistance uty= Single Pulse (25/2) P t 1 t 2 - uty actor, = t 1 /t 2 - Rth j-c= 5.5 TI (sec) 5/7
6 26P//2 ig14. ate harge VS I ast Recovery iode 1 V.8 V SS I 1. m V S gs gd g VS ig15. Single Pulsed valanche nergy 1 S = I 2 2 S V SS V SS - V V SS I S.5 V SS 25Ω V S I (t) 1 V VS V V S (t) ig16. Resistive oad Switching t p Time V S 9% R.5 V SS V 1% S 25 Ω V S t d(on) t r t d(off) t f 1V VS t on t off 6/7
7 26P//2 ig17. Source - rain iode Reverse Recovery and dv /dt I UT VS I S (UT) ody iode orword urrent di/dt IR IS ody iode Reverse urrent.8 V SS driver VS (UT) V S ody iode Recovery dv/dt V 1V VS ody iode orword Voltage drop 7/7
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pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters l LeadFree HEXFET Power MOSFET
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