StrongIRFET IRL7472L1TRPbF

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I, rain Current () trongirfet pplication Brushed Motor drive applications BLC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies ynchronous rectifier

1 I, rain Current () trongirfet pplication Brushed Motor drive applications BLC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies ynchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches C/C and C/C converters C/C Inverters Benefits Optimized for Logic Level rive Improved Gate, valanche and ynamic dv/dt Ruggedness Fully Characterized Capacitance and valanche O Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoH Compliant irectfet N-Channel Power MOFET V R (on) typ. V G = V R (on) typ. V G = 4.5V I (Package Limited) 40V 0.34m 0.45m 0.52m 0.70m 375 G L8 irectfet IOMETRIC tandard Pack Base part number Package Type Form Quantity Orderable Part Number IRL7472L1PbF irect FET Large Can (L8) Tape and Reel 4000 R (on), rain-to -ource On Resistance (m ) I = Limited by package T J = 125 C T J = 25 C V G, Gate -to -ource Voltage (V) T C, Case Temperature ( C) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum rain Current vs. Case Temperature

Notes: Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Used double sided cooling, mounting pad with large heatsink.

Units I @ T C = 25 C Continuous rain Current, V G @ V (ilicon Limited) 645 I @ T C = C Continuous rain Current, V G @ V (ilicon Limited) 456 I @ T = 25 C Continuous rain Current, V G @ V (ilicon

2 Notes: Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Used double sided cooling, mounting pad with large heatsink. bsolute Maximum Ratings ymbol Parameter Max. Units T C = 25 C Continuous rain Current, V V (ilicon Limited) 645 T C = C Continuous rain Current, V V (ilicon Limited) 456 T = 25 C Continuous rain Current, V V (ilicon Limited) 68 T C = 25 C Continuous rain Current, V V (Package Limited) 375 I M Pulsed rain Current 1500 C = 25 C Maximum Power issipation 341 = 25 C Maximum Power issipation 3.8 W Linear erating Factor W/ C V G Gate-to-ource Voltage ± 20 V T J Operating Junction and -55 to torage Temperature Range C T TG valanche Characteristics E (Thermally limited) ingle Pulse valanche Energy 308 mj E (Thermally limited) ingle Pulse valanche Energy 765 I R valanche Current ee Fig.15,16, 23a, 23b E R Repetitive valanche Energy mj Thermal Resistance ymbol Parameter Typ. Max. Units R J Junction-to-mbient 40 R J Junction-to-mbient 12.5 R J Junction-to-mbient 20 C/W R JC Junction-to-Case 0.44 R J-PCB Junction-to-PCB Mounted 1.0 T J = 25 C (unless otherwise specified) ymbol Parameter Min. Typ. Max. Units Conditions V (BR) rain-to-ource Breakdown Voltage 40 V V G = 0V, I = 250µ V (BR) / T J Breakdown Voltage Temp. Coefficient 30 mv/ C Reference to 25 C, I = 5.0m R (on) tatic rain-to-ource On-Resistance m V G = V, I = V G = 4.5V, I = 98 V G(th) Gate Threshold Voltage V V = V G, I = 250µ I rain-to-ource Leakage Current 1.0 V = 40V, V G = 0V µ 150 V = 40V, V G = 0V, T J = 125 C I G Gate-to-ource Forward Leakage V G = 20V n Gate-to-ource Reverse Leakage - V G = -20V R G Internal Gate Resistance 1.0 TC measured with thermocouple mounted to top (rain) of part. urface mounted on 1 in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)

3 T J = 25 C (unless otherwise specified) ymbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 232 V = V, I = 195 Q g Total Gate Charge I = 195 Q gs Gate-to-ource Charge 95 V nc = 20V Q gd Gate-to-rain ("Miller") Charge 87 V G = 4.5V Q sync Total Gate Charge ync. (Q g - Q gd ) 133 I = 195, V =0V, V G = 4.5V t d(on) Turn-On elay Time 68 V = 20V t r Rise Time 176 I ns = 30 t d(off) Turn-Off elay Time 174 R G = 2.7 t f Fall Time 137 V G = 4.5V C iss Input Capacitance V G = 0V C oss Output Capacitance 2436 V = 25V C rss Reverse Transfer Capacitance 1594 pf ƒ = khz C oss eff. (ER) Effective Output Capacitance (Energy Related) 2855 V G = 0V, V = 0V to 32V C oss eff. (TR) Effective Output Capacitance (Time Related) 3544 V G = 0V, V = 0V to 32V iode Characteristics ymbol Parameter Min. Typ. Max. Units Conditions I Continuous ource Current MOFET symbol 341 (Body iode) showing the G I M Pulsed ource Current integral reverse 1500 (Body iode) p-n junction diode. V iode Forward Voltage 1.2 V T J = 25 C, I =195, V G = 0V dv/dt Peak iode Recovery 1.3 V/ns T J =175 C, I =195, V = 40V t rr Reverse Recovery Time 57 T J = 25 C V R = 34V, ns 58 T J = 125 C I F = 195 Q rr Reverse Recovery Charge 3 T J = 25 C di/dt = /µs nc 114 T J = 125 C I RRM Reverse Recovery Current 3.1 T J = 25 C Notes: Package limit current based on source connection technology Repetitive rating; pulse width limited by max. junction temperature. Limited by T J max, starting T J = 25 C, L = 0.016mH, R G = 50, I = 195, V G =V. I 195, di/dt 984/µs, V V( BR), T J 175 C. Pulse width 400µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V is rising from 0 to 80% V. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V is rising from 0 to 80% V. R is measured at T J approximately 90 C. Limited by T J max, starting T J = 25 C, L = 1.0mH, R G = 50, I = 39, V G =V. ilicon limit current based on maximum allowable junction temperature T Jmax

4 C, Capacitance (pf) V G, Gate-to-ource Voltage (V) I, rain-to-ource Current () R (on), rain-to-ource On Resistance (Normalized) I, rain-to-ource Current () I, rain-to-ource Current () VG TOP 15V V 6.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 0 VG TOP 15V V 6.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 3.0V 60µs PULE WITH Tj = 25 C V, rain-to-ource Voltage (V) Fig 3. Typical Output Characteristics 60µs PULE WITH Tj = 175 C V, rain-to-ource Voltage (V) Fig 4. Typical Output Characteristics I = 195 V G = V T J = 175 C T J = 25 C V = V 60µs PULE WITH V G, Gate-to-ource Voltage (V) T J, Junction Temperature ( C) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature 000 V G = 0V, f = KHZ C iss = C gs + C gd, C ds HORTE 14 I = 195 C rss = C gd C oss = C ds + C gd C iss 12 V = 32V V = 20V 00 C oss 8 6 C rss V, rain-to-ource Voltage (V) Q G, Total Gate Charge (nc) Fig 7. Typical Capacitance vs. rain-to-ource Voltage Fig 8. Typical Gate Charge vs. Gate-to-ource Voltage

5 V (BR), Energy (µj) I, Reverse rain Current () I, rain-to-ource Current () 00 OPERTION IN THI RE LIMITE BY R (on) 0 0 µsec T J = 175 C T J = 25 C Limited by Package 1msec V G = 0V V, ource-to-rain Voltage (V) Fig 9. Typical ource-rain iode Forward Voltage 1 Tc = 25 C Tj = 175 C ingle Pulse msec C V, rain-to-ource Voltage (V) Fig. Maximum afe Operating rea rain-to-ource Breakdown Voltage (V) Id = 5.0m T J, Temperature ( C ) Fig 11. rain-to-ource Breakdown Voltage V, rain-to-ource Voltage (V) Fig 12. Typical C oss tored Energy R (on), rain-to -ource On Resistance (m ) Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.5V Vgs = 6.0V Vgs = 8.0V Vgs = V I, rain Current () Fig 13. Typical On-Resistance vs. rain Current

6 E R, valanche Energy (mj) 1 Thermal Response ( Z thjc ) C/W = INGLE PULE ( THERML REPONE ) Notes: 1. uty Factor = t1/t2 2. Peak Tj = P dm x Zthjc + Tc E-006 1E t 1, Rectangular Pulse uration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0 valanche Current () llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125 C and Tstart =25 C (ingle Pulse) llowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 125 C E E E E E E-01 tav (sec) TOP ingle Pulse BOTTOM 1.0% uty Cycle I = tarting T J, Junction Temperature ( C) Fig 16. Maximum valanche Energy vs. Temperature Fig 15. valanche Current vs. Pulse Width Notes on Repetitive valanche Curves, Figures 15, 16: (For further info, see N-5 ) 1.valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. afe operation in valanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = llowable avalanche current. 7. T = llowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 14, 15). t av = verage time in avalanche. = uty cycle in avalanche = tav f Z thjc (, t av ) = Transient thermal resistance, see Figures 13) P (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2 T/ [1.3 BV Z th ] E (R) = P (ave) t av

7 Q RR (nc) I RRM () Q RR (nc) V G(th), Gate threshold Voltage (V) I RRM () I F = 117 V R = 34V T J = 25 C T J = 125 C 1.0 I = 250µ I = 1.0m I = T J, Temperature ( C ) di F /dt (/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt I F = 195 V R = 34V 16 T J = 25 C 14 T J = 125 C di F /dt (/µs) I F = 117 V R = 34V 800 T J = 25 C 700 T J = 125 C di F /dt (/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical tored Charge vs. dif/dt I F = 195 V R = 34V T J = 25 C T J = 125 C di F /dt (/µs) Fig 21. Typical tored Charge vs. dif/dt

Fig 22. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOFETs V (BR) 15V tp V L RIVER R G 20V tp.u.t I 0.01 + - V I Fig 23a. Unclamped Inductive Test Circuit Fig 23b.

8 Fig 22. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOFETs V (BR) 15V tp V L RIVER R G 20V tp.u.t I V I Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. witching Time Test Circuit Fig 24b. witching Time Waveforms Vds Id Vgs V Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform

9 irectfet Board Footprint, L8 Outline (Large ize Can, 8-ource Pads) Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G = GTE = RIN = OURCE G Note: For the most current drawing please refer to website at

10 irectfet Outline imension, L8 Outline (Large ize Can, 8-ource Pads) Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE B C E F G H J K L M P R IMENION METRIC IMPERIL MIN MX MIN MX L irectfet Part Marking GTE MRKING + LOGO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to website at

11 irectfet Tape & Reel imension (howing component orientation). LOE TPE FEE IRECTION + NOTE: Controlling dimensions in mm td reel quantity is 4000 parts. Order as IRF7472L1TRPBF). COE B C E F G H REEL IMENION TNR OPTION (QTY 4000) METRIC MIN MX IMPERIL MX MIN NOTE: CONTROLLING IMENION IN MM COE B C E F G H IMENION METRIC MIN MX IMPERIL MIN MX Note: For the most current drawing please refer to website at Qualification Information Qualification Level Industrial * (per JEEC JE47F guidelines) Moisture ensitivity Level RoH Compliant irectfet (Large -Can) Yes ML1 (per JEEC J-T-020 ) pplicable version of JEEC standard at the time of product release. * Industrial qualification standards except autoclave test conditions

12 Revision History ate 08/09/2016 Comments Changed datasheet with Infineon logo - all pages. Changed max V/4.5V from 0.59m /0.97m " to 0.45m " / 0.7m " - on pages 1 & 2. Changed TC 25C/C from 564/399 to 645/456 - on pages 1 & 2. Changed T 25C from 59 to 68 - on pages 1 & 2. Changed Fig.2 -on page 2. /14/2016 Corrected Outline imension, L8 Outline on page. Trademarks of Infineon Technologies G µhvic, µipm, µpfc, U-ConvertIR, URIX, C166, CanPK, CIPO, CIPURE, CoolP, CoolGaN, COOLiR, CoolMO, CoolET, CooliC, VE, I-POL, irectfet, rblade, EasyPIM, EconoBRIGE, EconoUL, EconoPCK, EconoPIM, EiceRIVER, eupec, FCO, GaNpowIR, HEXFET, HITFET, HybridPCK, imotion, IRM, IOFCE, IsoPCK, LErivIR, LITIX, MIPQ, ModTCK, my-d, NovalithIC, OPTIG, OptiMO, ORIG, PowIRaudio, PowIRtage, PrimePCK, PrimeTCK, PROFET, PRO-IL, RIC, REL3, martlewi, OLI FLH, POC, trongirfet, upirbuck, TEMPFET, TRENCHTOP, TriCore, UHVIC, XHP, XMC Trademarks updated November 2015 Other Trademarks ll referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies G Munich, Germany 2016 Infineon Technologies G. ll Rights Reserved. o you have a question about this document? erratum@infineon.com ocument reference ifx1 IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( Please note that this product is not qualified according to the EC Q or EC Q1 documents of the utomotive Electronics Council. WRNING ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury

IR MOSFET StrongIRFET IRF40DM229

IR MOSFET StrongIRFET IRF40DM229 I, rain Current (A) IR MOFET trongirfet IRF40M229 Application Brushed Motor drive applications BLC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies ynchronous rectifier