Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/5A, R DS(ON) = 10V = V GS. = 65mW(max.
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1 N-Chnnel Enhncement Mode MOSFET Fetures 50V/5, R DS(ON) = V GS = 0V R DS(ON) = V GS = 5V Relible nd Rugged Led Free nd Green Devices vilble (RoHS Complint) Pin Description D D D D S S S G Top View of SOP-8 ( 5,6,7,8 ) D D DD pplictions (4) G DC-DC converter switching for Networkong Generl purpose switching S S S (, 2, 3) N-Chnnel MOSFET Ordering nd Mrking Informtion SMF03NS SMF03NS K : F03 XXXXX ssembly Mteril Hndling Code Temperture Rnge Pckge Code Pckge Code K : SOP-8 Operting Junction Temperture Rnge C : -55 to 50 o C Hndling Code TR : Tpe & Reel (2500e/reel) ssembly Mteril G : Hlogen nd Led Free Device XXXXX - Lot Code Note : SINOPOWER led-free products contin molding compounds/die ttch mterils nd 00% mtte tin plte termintion finish; which re fully complint with RoHS. SINOPOWER led-free products meet or exceed the ledfree requirements of IPC/JEDEC J-STD-020D for MSL clssifiction t led-free pek reflow temperture. SINOPOWER defines Green to men led-free (RoHS complint) nd hlogen free (Br or Cl does not exceed 900ppm by weight in homogeneous mteril nd totl of Br nd Cl does not exceed 500ppm by weight). SINOPOWER reserves the right to mke chnges to improve relibility or mnufcturbility without notice, nd dvise customers to obtin the ltest version of relevnt informtion to verify before plcing orders.
2 bsolute Mximum Rtings (T = 25 C Unless Otherwise Noted) Symbol Prmeter Rting Unit V DSS Drin-Source Voltge 50 V GSS Gte-Source Voltge ±25 I D I DM I S Continuous Drin Current (V GS =0V) T =25 C 5 T =70 C 4 300ms Pulsed Drin Current (V GS =0V) 20 Diode Continuous Forwrd Current 5 T J Mximum Junction Temperture 50 T STG Storge Temperture Rnge -55 to 50 P D R qj,b Mximum Power Dissiption Therml Resistnce-Junction to mbient T =25 C 3.5 T =70 C 2.3 t 0s 35 Stedy Stte 65 R qjl Therml Resistnce-Junction to Led Stedy Stte 20 Note :Surfce Mounted on in 2 pd re, t 0sec. Note b:mximum under Stedy Stte conditions is 75 C/W. V C W C/W Electricl Chrcteristics (T = 25 C Unless Otherwise Noted) SMF03NSK Symbol Prmeter Test Conditions Unit Min. Typ. Mx. Sttic Chrcteristics BV DSS Drin-Source Brekdown Voltge V GS =0V, I DS =250m V I DSS V DS =20V, V GS =0V - - Zero Gte Voltge Drin Current m T J =85 C V GS(th) Gte Threshold Voltge V DS =V GS, I DS =250m V I GSS Gte Lekge Current V GS =±25V, V DS =0V - - ±00 n R DS(ON) V GS =0V, I DS = Drin-Source On-stte Resistnce mw V GS =5V, I DS = Diode Chrcteristics V SD b t rr b Q rr Diode Forwrd Voltge I SD =5, V GS =0V V Reverse Recovery Time ns I SD =5, dl SD /dt=00/ms Reverse Recovery Chrge nc 2
3 Electricl Chrcteristics (Cont.) (T = 25 C Unless Otherwise Noted) Symbol Prmeter Test Conditions Dynmic Chrcteristics b SMF03NSK Min. Typ. Mx. C iss Input Cpcitnce V GS =0V, C oss Output Cpcitnce V DS =30V, Reverse Trnsfer Cpcitnce Frequency=.0MHz C rss t d(on) Turn-on Dely Time t r Turn-on Rise Time V DD =30V, R L =30W, I DS =, V GEN =0V, t d(off) Turn-off Dely Time R G =6W Turn-off Fll Time t f Gte Chrge Chrcteristics b Q g Totl Gte Chrge Q gs Gte-Source Chrge V DS =30V, V GS =0V, I DS =5-7 - Gte-Drin Chrge Q gd Note : Pulse test ; pulse width 300 ms, duty cycle 2%. Note b : Gurnteed by design, not subject to production testing. Unit pf ns 3
4 Typicl Operting Chrcteristics Power Dissiption Drin Current Ptot - Power (W) T C =25 o C Tj - Junction Temperture ( C) ID - Drin Current () C =25o C,V G =0V Tj - Junction Temperture ( C) 00 Sfe Opertion re 2 Therml Trnsient Impednce ID - Drin Current () 0 0. Rds(on) Limit 300ms ms 0ms 00ms s DC T C =25 o C Normlized Trnsient Therml Resistnce Single Pulse 0.2 Duty = 0.5 Mounted on in 2 pd R qj : 35 o C/W E-3 E-4 E VDS - Drin - Source Voltge (V) Squre Wve Pulse Durtion (sec) 4
5 Typicl Operting Chrcteristics (Cont.) Output Chrcteristics Drin-Source On Resistnce 20 V GS =5,6,7,8,9,0V 90 ID - Drin Current () V RDS(ON) - On - Resistnce (mw) V GS =5V V GS =0V 4V VDS - Drin - Source Voltge (V) ID - Drin Current () Gte-Source On Resistnce Gte Threshold Voltge 00 I DS =5.6 I DS =250m RDS(ON) - On - Resistnce (mw) Normlized Threshold Voltge VGS - Gte - Source Voltge (V) Tj - Junction Temperture ( C) 5
6 Typicl Operting Chrcteristics (Cont.) Drin-Source On Resistnce Source-Drin Diode Forwrd V GS = 0V I DS = Normlized On Resistnce IS - Source Current () T j =50 o C T j =25 o C R j =25 o C: 52mW Tj - Junction Temperture ( C) VSD - Source - Drin Voltge (V) Cpcitnce Gte Chrge Frequency=MHz 0 9 V DS = 30V I DS = 5 C - Cpcitnce (pf) Crss Coss Ciss VGS - Gte-source Voltge (V) VDS - Drin - Source Voltge (V) QG - Gte Chrge (nc) 6
7 vlnche Test Circuit nd Wveforms VDS L tp VDSX(SUS) DUT IS VDS RG VDD VDD tp IL 0.0W ES tv Switching Time Test Circuit nd Wveforms VDS DUT RD VDS 90% RG VGS VDD tp 0% VGS td(on) tr td(off) tf 7
8 Pckge Informtion SOP-8 D -T- SETING PLNE < 4 mils SEE VIEW E E h X 45 e b c 2 VIEW L 0.25 GUGE PLNE SETING PLNE S Y M B MILLIMETERS O L MIN. MX..75 c D E E e h L b SOP-8.27 BSC BSC MIN INCHES MX Note:. Follow JEDEC MS Dimension D does not include mold flsh, protrusions or gte burrs. Mold flsh, protrusion or gte burrs shll not exceed 6 mil per side. 3. Dimension E does not include inter-led flsh or protrusions. Inter-led flsh nd protrusions shll not exceed 0 mil per side. RECOMMENDED LND PTTERN UNIT: mm 8
9 Crrier Tpe & Reel Dimensions OD0 P0 P2 P H E OD B T B0 W F K0 B 0 SECTION - SECTION B-B d T ppliction H T C d D W E F 330.0± MIN MIN MIN. 2.0± ± ±0.05 SOP-8 P0 P P2 D0 D T 0 B0 K0 4.0± ± ± MIN ± ± ± (mm) 9
10 Tping Direction Informtion SOP-8 USER DIRECTION OF FEED Clssifiction Profile 0
11 Clssifiction Reflow Profiles Profile Feture Sn-Pb Eutectic ssembly Pb-Free ssembly Prehet & Sok Temperture min (T smin ) Temperture mx (T smx ) Time (T smin to T smx ) (t s ) 00 C 50 C seconds 50 C 200 C seconds verge rmp-up rte (T smx to T P ) 3 C/second mx. 3 C/second mx. Liquidous temperture (T L ) Time t liquidous (t L ) Pek pckge body Temperture (T p )* Time (t P )** within 5 C of the specified clssifiction temperture (T c ) 83 C seconds 27 C seconds See Clssifiction Temp in tble See Clssifiction Temp in tble 2 20** seconds 30** seconds verge rmp-down rte (T p to T smx ) 6 C/second mx. 6 C/second mx. Time 25 C to pek temperture 6 minutes mx. 8 minutes mx. * Tolernce for pek profile Temperture (T p ) is defined s supplier minimum nd user mximum. ** Tolernce for time t pek profile temperture (t p ) is defined s supplier minimum nd user mximum. Tble. SnPb Eutectic Process Clssifiction Tempertures (Tc) Pckge Volume mm 3 Thickness <350 Tble 2. Pb-free Process Clssifiction Tempertures (Tc) Volume mm <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Pckge Thickness Volume mm 3 <350 Volume mm Volume mm 3 >2000 <.6 mm 260 C 260 C 260 C.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Relibility Test Progrm Test item Method Description SOLDERBILITY JESD-22, B02 5 Sec, 245 C HTRB JESD-22, Hrs, 80% of VDS Tjmx HTGB JESD-22, Hrs, 00% of VGS Tjmx PCT JESD-22, Hrs, 00%RH, 2tm, 2 C TCT JESD-22, Cycles, -65 C~50 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Prk, Hsinchu, 30078, Tiwn TEL: Fx:
Package Code. K : SOP-8 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel (2500ea/reel)
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P - 95308 SMPS MOSFET IRF7460PbF pplications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor
PowerMOS transistor PINNING - SOT428 PIN CONFIGURATION SYMBOL. tab
PHDE GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT fieldeffect power transistor in a plastic envelope suitable for surface V DS Drainsource voltage 6 V mounting
Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator VOUT V OUT GND
Ultra-Low-Noise, High PSRR, Low-Dropout, 300m Linear Regulator Features General Description Wide Operating Voltage: 2.5~6V Low Dropout Voltage: 290mV @ 3V/300m Fixed Output Voltages: 1.2~3.7V with Step
(Preliminary version) Operating Junction and Storage Temperature Range SSP4060NL. N-Channel Enhancement Mode MOSFET FEATURES TO-220.
Nhnnel Enhncement Mde MOFET D () 6 FETURE Prduct ummry TO ID () RD(ON) (mω) Mx @ = 5 @ = 5 D uper high density cell design fr lw RD(ON). Rugged nd relible. TO pckge. Pb free. BOLUTE MXIMUM RTIN (T = 5
NTSB40200CTG, NTSJ40200CTG. Very Low Forward Voltage Trench-based Schottky Rectifier. Exceptionally Low V F = 0.53 V at I F = 5 A
NTSBCTG, NTSJCTG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low V F =.3 V at I F = Features Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and
N-Channel ENHANCEMENT MODE POWER MOSFET 0V
PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION
IXTH80N65X2 V DSS. X2-Class Power MOSFET = 650V I D25. = 80A 38m. R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D S
X2-Class Power MOSFET V DSS = 6V I D25 = A 38m R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V DSS = 25 C to 1 C 6 V V DGR = 25 C to 1 C, R GS = 1M 6
Features. R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q2 Q1 Units
Dual Notebook Power Supply N-Channel PowerTrench SyncFet September General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide
Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J
P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise
TrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information IXTA182N55T IXTP182N55T V DSS = 55 V I D25 = 182 A R DS(on) 5. m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings
SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description
Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity
Rev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT-223 4 2 3 VPS563 Type Package Tape
IXFT100N30X3HV IXFH100N30X3
X3-Class HiPerFET TM Power MOSFET Advance Technical Information IXFTN3X3HV IXFHN3X3 V DSS = 3V I D25 = A R DS(on) 13.5m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Symbol Test Conditions
VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY
HEXFRED Ultrafast Soft Recovery Diode, 8 2, 4 FETURES Ultrafast recovery time Ultrasoft recovery Very low I RRM 3 TO-252 (D-PK) N/C node PRODUCT SUMMRY Package TO-252 (D-PK) I F(V) 8 V R 600 V V F at I
BSL211SP. Rev 2.0. Product Summary V DS -20 V R DS(on) 67 mω I D -4.7 A. Type Package Tape and reel BSL211SP P-TSOP6-6 H6327: 3000pcs/r.
OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Pb-free lead plating; RoHS compliant Qualified
AON V N-Channel MOSFET
AON66 V NChannel MOSFET General Description The AON66 utilize advanced trench MOSFET technology in small DFN. x.6 package. This device is ideal for load switch applications. Product Summary V DS V I D
500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPW47N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 I D 47 Ultra low gate charge Periodic avalanche rated
N- & P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel
TrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information V DSS = 55 V I D25 = A R DS(on) 8.8 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS = 25 C to 175
Characteristic Symbol Value Units V GSS
NEW PROUCT Features Low On-Resistance: R S(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair lso vailable in Lead Free Version Mechanical
D Series Power MOSFET
D Series Power MOSFET SiHUND PRODUCT SUMMRY (V) at T J max. R DS(on) max. () at 2 C V GS = V.2 Q g max. (nc) 2 Q gs (nc) 2 Q gd (nc) Configuration Single D IPK (TO2) G D S ORDERING INFORMTION Package Lead
E Series Power MOSFET
E Series Power MOSFET SiHB33N6E PRODUCT SUMMRY (V) at T J max. 6 R DS(on) max. () at 2 C V GS = V.99 Q g max. (nc) Q gs (nc) 24 Q gd (nc) 42 Configuration Single D D 2 PK (TO263) G G D S S NChannel MOSFET
AON V Common-Drain Dual N-Channel MOSFET
2V CommonDrain Dual NChannel MOSFET General Description Low R DS(ON) With ESD Protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and HalogenFree
IXFH42N60P3. Polar3 TM HiperFET TM Power MOSFET. = 600V = 42A 185m. Preliminary Technical Information. R DS(on)
Polar3 TM HiperFET TM Power MOSFET Preliminary Technical Information V DSS I D2 R DS(on) = V = 42A 8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum
NGTB30N65IHL2WG IGBT. 30 A, 650 V V CEsat = 1.6 V E off = 0.2 mj
NGTB3N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications,
V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
AONR V P-Channel MOSFET
3V PChannel MOSFET General Description Latest Advanced Trench Technology Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary V DS 3V I D (at V GS =V) A R DS(ON) (at V GS
-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel
YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A
SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
pplications Reset Switch for ctive Clamp Reset C-C converters Lead-Free l l SMPS MOSFET P - 95293 IRF626PbF HEXFET Power MOSFET V SS R S(on) max I -50V 0.240W@V GS =-V -2.2 Benefits l Low Gate to rain
P-channel enhancement mode MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = 2 V Fast switching Logic level compatible I D =.2 A Subminiature surface mount g package R DS(ON). Ω (V GS =. V) GENERAL DESCRIPTION
TrenchT2 TM Power MOSFET
Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N4T2-7 V DSS = V I D = 3A 2.5mΩ R DS(on) TO-263 (7-lead) Symbol Test Conditions Maximum Ratings
SSF7NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche
PPM3T60V2 P-Channel MOSFET
P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 0.11 @ V GS =-10V -60 0.13 @ V GS =-4.5V
AOP605 Complementary Enhancement Mode Field Effect Transistor
AOP65 Complementary Enhancement Mode Field Effect Transistor General Description The AOP65/L uses advanced trench technology to provide excellent and low gate charge. The complementary MOSFETs form a highspeed
CM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack
IC... 1 CES... 1 Insulated Type -elements in a pack PPLICTION UPS & General purpose inverters, etc OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm,b HOUSING Type (J. S. T. Mfg. Co. Ltd) : HR-N B : HR-N
V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
30V GS = 10V 6.2nC
pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)
AON4605 Complementary Enhancement Mode Field Effect Transistor
AON5 Complementary Enhancement Mode Field Effect Transistor General Description The AON5 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form
N-channel TrenchMOS transistor
PSMN2-5W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal resistance g d s V DSS = 5 V I D = 73 A R DS(ON) 2 mω GENERAL DESCRIPTION PINNING
SGM Ω, High Speed, Low Voltage Analog Switch/Multiplexer
.5Ω, High Speed, Low Voltage nalog Switch/Multiplexer GENERL DESCRIPTION The SGM4782 is high-speed, low-voltage, low on-resistance, CMOS analog multiplexer/switch that configured as two 4-channel multiplexers.
V DS. I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-1.8V) 100% UIS Tested 100% R g Tested. DFN 3x3_EP D
AON747 V PChannel MOSFET General Description The AON747 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
IXFH400N075T2 IXFT400N075T2
Advance Technical Information TrenchT2 TM HiperFET TM Power MOSFET IXFH4N75T2 IXFT4N75T2 V DSS I D25 R DS(on) = 75V = 4A 2.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH)