SSM9435. P-Channel Enhancement Mode MOSFET FEATURES. Product Summary SO-8. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

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1 Phnnel Enhncement Mde MOSFET Prduct Summry SO DS () ID () RDS(ON) (mω) Mx = =. D (,, 7, ) FETURES Super high density cell design fr lw RDS(ON). Rugged nd relible. SO pckge. Pb free. G () S(,, ) BSOLUTE MXIMUM RTINGS (T = unless therwise nted) Prmeter Symbl Limit Unit DrinSurce ltge DS GteSurce ltge GS + Drin TJ = ID. Pulsed b IDM 7 DrinSurce Dide Frwrd urrent IS.7 Mximum Pwer Dissiptin PD. W Operting Junctin nd Strge Temperture Rnge TJ, TSTG t THERML HRTERISTIS Therml Resistnce, Junctintmbient R J /W Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (Rev.)

2 Phnnel Electricl hrcteristics (T = unless therwise nted) c Prmeter Symbl nditin Min Typ Mx Unit DrinSurce Brekdwn ltge BDSS GS=, ID= Zer Gte ltge Drin urrent IDSS DS=, GS= GteBdy Lekge IGSS GS=, DS= n Gte Threshld ltge GS(th) DS=GS ID=.. DrinSurce OnStte Resistnce RDS(ON) GS=, ID=. GS=., ID=. 9 m OnStte Drin urrent ID(ON) DS=, GS= Frwrd Trnscnductnce gfs DS=, ID=. S Input pcitnce ISS DS= Output pcitnce OSS GS= PF Reverse Trnsfer pcitnce RSS f=.mhz TurnOn Dely Time Rise Time TurnOff Dely Time td(on) tr td(off) DD=, ID=, GEN=, RGEN=, ns Fll Time tf RL= Ttl Gte hrge GteSurce hrge GteDrin hrge Qg Qgs Qgd DS=, ID=., GS= DS=, ID=., GS= Dide Frwrd ltge SD GS=, ID=.7.. Ntes. Surfce Munted n FR Brd, t < sec. b. Pulse Test Pulse Width < s, Duty ycle < %. c. Gurnteed by design, nt subject t prductin testing. DS=, ID=., GS=.. n Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (Rev.)

3 I D, Drin urrent ( ) GS =.~. GS =. I D, Drin u rrent ( ) Tj = GS = ~. DS, DrintSurce ltge () GS, GtetSurce ltge () Figure. Output hrcteristics Figure. Trnsfer hrcteristics pcitnce (pf), 7 ss iss D S(ON) e OnResistnc rmlized ( N ) R, GS = ID =. rss DS, DrintSurce ltge () Figure. pcitnce. 7 Tj, Junctin Tempertture ( ) Figure. OnResistnce ritin with Temperture O th, Nrmlized GteSurce Threshld ltge DS = GS ID =. 7 Tj, Junctin Temperture ( ) B S, Nrmlize D rinsurce Brekdwn ltg e D S d ID = 7 Tj, Junctin Temperture ( ) Figure. Gte Threshld ritin with Temperture Figure. Brekdwn ltge ritin with Temperture Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (Rev.)

4 F S ) Trnscnductnce (S g, DS = IDS, DrinSurce urrent () Figure 7. Trnscnductnce ritin with Drin urrent I S, SurceDrin urrent ( ).... TJ = O SD, Bdy Dide Frwrd ltge () Figure. Bdy Dide Frwrd ltge ritin with Surce urrent G ) ltge ( Surce Gte t, S DS = ID =. Qg, Ttl Gte hrge (n) ID ) ( Drin urrent,.. RDS(ON) Limit GS = Single Pulse T = D. SD, DrintSurce ltge () s ms ms Figure 9. Gte hrge Figure. Mximum Sfe Operting re Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (Rev.)

5 DD tn tff GS RGEN IN G D RL OUT td(n) OUT % tr 9% td(ff) 9% % 9% tf S IN % % % INERTED PULSE WIDTH Figure. Switching Test ircuit Figure. Switching Wvefrms Duty ycle =. (t), Nrmlized Effectiv Trnsient Therml Impednce r e Single Pulse PDM t t. R J(t) = r(t)*r J. R J = see dtsheet. TJM T = PDM*R J(t). Duty ycle, D = t/t Squre Wve Pulse Durtin (sec) Figure. Nrmlized Therml Trnsient Impednce urve Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (Rev.)