SMG2305L. P-Channel Enhancement Mode Power Mos.FET WILLAS ELECTRONIC CORP. Description. Features. Applications. Absolute Maximum Ratings

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER. VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes VRRM VRMS VDC IFSM

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 t CURRENT Amperes RSM THRU RS7M FEATURES * Lw leakage * Lw frward vltage * Munting psitin : Any * Surge verlad rating: Amperes peak

N-Channel ENHANCEMENT MODE POWER MOSFET 0V

PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Rating and characteristic curves... 2 2~3 4 Pinning infrmatin... 5 Marking... Suggested slder pad layut... 5 5 Packing

DISCRETE SEMICONDUCTORS DATA SHEET. BF996S N-channel dual-gate MOS-FET. Product specification File under Discrete Semiconductors, SC07

DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semicnductrs, SC7 April 1991 FEATURES Prtected against excessive input vltage surges by integrated back-t-back dides between gates and surce. DESCRIPTION

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

l l l l l Advanced Prcess Technlgy Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Descriptin Fifth Generatin HEXFETs frm Internatinal Rectifier utilize advanced prcessing

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

l Advanced Prcess Technlgy l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Descriptin Fifth Generatin HEXFETs frm Internatinal Rectifier utilize

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

l l l l l l Advanced Prcess Technlgy Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Descriptin Fifth Generatin HEXFET Pwer MOSFETs frm Internatinal Rectifier

SSM9435. P-Channel Enhancement Mode MOSFET FEATURES. Product Summary SO-8. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

Phnnel Enhncement Mde MOSFET Prduct Summry SO DS () ID () RDS(ON) (mω) Mx 7. @GS = 9 @GS =. D (,, 7, ) FETURES Super high density cell design fr lw RDS(ON). Rugged nd relible. SO pckge. Pb free. G () S(,,

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... Rating and characteristic curves...

List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Electrical characteristics... Rating and characteristic curves... 2 2 3 4 Pinning infrmatin... 5 Marking... Suggested

BF908; BF908R IMPORTANT NOTICE. use

Rev. 3 14 Nvember 27 Prduct data sheet IMPORTANT NOTICE Dear custmer, As frm Octber 1st, 26 Philips Semicnductrs has a new trade name - NXP Semicnductrs, which will be used in future data sheets tgether

T0521SB. Applications. Features. Mechanical Characteristics. Circuit Diagram I/O_1. Description. Pin Configuration

Features Transient prtectin fr high-speed data lines IEC 61000-4-2 (ESD) ±25kV (Air) ±20kV (Cntact) IEC 61000-4-2 (EFT)40A(5/50 ns) Cable Discharge Event (CDE) Package ptimized fr high-speed lines Ultra-small

400V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID. Features. Ordering Information 400V 0.55Ω 10.5A. This Power MOSFET is produced using

400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... 3~4

List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3~4 Switching time equivalent test circuits... Rating and characteristic curves...

List... Package outline... Features Mechanical data... Maximum ratings and Electrical characteristics Rating and characteristic curves...

Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... 2 Maximum ratings and Electrical characteristics... 2 Rating and characteristic curves... 3 Pinning infrmatin... 4 Marking...

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

SMD Switching Dide V9WS THRU VWS rmsa MS List List... Package utline... eatures... Mechanical data... Maximum ratings... Rating and characteristic curves... 3 Pinning infrmatin... 4 Marking... Suggested

List... Package outline... Features Mechanical data... Maximum ratings... Switching time equivalent test circuits...

SMD NPN Transistr Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Switching time equivalent test circuits... Rating and characteristic curves... 2 2~3 4

Photocoupler Product Data Sheet LTV (M, S, S-TA, S-TA1, S-TP) Series Spec No.: DS Effective Date: 06/28/2011 LITE-ON DCC

Phtcupler Prduct Data Sheet LTV-814 824 844 (M, S, S-TA, S-TA1, S-TP) Series Spec N.: DS-7-96-13 Effective Date: 6/28/211 Revisin: F LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technlgy Crp. / Optelectrnics

PPM3T60V2 P-Channel MOSFET

P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 0.11 @ V GS =-10V -60 0.13 @ V GS =-4.5V

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation

Features. T A =25 o C unless otherwise noted

NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class

Battery Disconnect Switch

New Product Battery Disconnect Switch Solution for Bi-Directional Blocking Bi-Directional Conduction Switch 6- to 30-V Operation Ground Referenced Logic Level Inputs Integrated Low r DS(on) MOSFET Level-Shifted

PDM6UT20V08E N-Channel and P-Channel,20V,Small signal MOSFET

N-Channel and P-Channel,2V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D1 G2 S2 MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A).3@

P-channel enhancement mode MOS transistor

FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = 2 V Fast switching Logic level compatible I D =.2 A Subminiature surface mount g package R DS(ON). Ω (V GS =. V) GENERAL DESCRIPTION

PowerMOS transistor PINNING - SOT428 PIN CONFIGURATION SYMBOL. tab

PHDE GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT fieldeffect power transistor in a plastic envelope suitable for surface V DS Drainsource voltage 6 V mounting

1/11. Photocoupler LTV-354T series 1. DESCRIPTION. 1.1 Features. 1.2 Applications

Phtcupler 1. DESCRIPTION 1.1 Features AC input respnse Current transfer rati ( CTR : MIN. 2% at I F = ±1mA, V CE = 5V ) Current transfer rati ( CTR : 1% ~ 3% at I F = ±1mA, V CE = 5V ) High input-utput

Property of LITE-ON Only

Prperty f LITE-ON Only FEATURES * Current transfer rati ( CTR : MIN. 5% at IF = 5mA, VCE = 5V ) * High input-utput islatin vltage ( Vis = 3,75Vrms ) * High cllectr-emitter vltage ( VCEO = 8V ) * Emplys

BAW56TB,BAV70TB,BAV99TB,BAL99TB

SURFACE MUNT SWITCHING DIDES LTAGE olt PWER 200mWatt ST-523 Unit: inch(mm) FEATURES Fast switching speed. Surface mount package Ideally Suited for Automatic insertion Electrically Identical to Standard

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Photocoupler Product Data Sheet 4N35/ 4N37 (M, S, S-TA1) Spec No.: DS Effective Date: 12/13/2011 LITE-ON DCC RELEASE

Phtcupler Prduct Data Sheet 4N3/ 4N37 (M, S, S-TA1) Spec N.: DS-7-99-12 Effective Date: 12/13/211 Revisin: C LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technlgy Crp. / Optelectrnics N.9,Chien 1 Rad, Chung

List... Package outline... Features Mechanical data Maximum ratings... Electrical characteristics... 2

List List... Package utline... 1 2 Features... 2 Mechanical data... 2 Maximum ratings... 2 Electrical characteristics... 2 Rating and characteristic curves... 3 Pinning infrmatin... 4 Marking... Suggested

Distributed by: www.jamec.cm 1-8-831-4242 The cntent and cpyrights f the attached material are the prperty f its wner. FEATURES * Current transfer rati ( CTR : MIN. 5% at IF = 5mA, VCE = 5V ) * High input-utput

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 5 @ V GS = V.5 SD3DE-.5 5 @ V

EPC2108 Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap

EPC8 Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap V DSS, 6 V R DS(on), m I D,.7 A EFFICIENT POWER CONVERSION HAL EPC8 Gallium Nitride is grown on Silicon Wafers

N-channel TrenchMOS logic level FET

M3D315 Rev. 3 23 January 24 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features Low on-state resistance Fast switching

BSS123. Rev K/W. R thja

Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thj - - 35 K/W Electrical Characteristics, at T j = 25

List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

SMD Small Signal Schttky Dide Frmsa MS List List... Package utline... 1 Features... Mechanical data... Maximum ratings... Rating and characteristic curves... 3 Pinning infrmatin... 4 Marking... Suggested

DF452. Fast Recovery Diode DF452 APPLICATIONS KEY PARAMETERS V RRM 1600V I F(AV) 540A I FSM. 5000A Q r t rr FEATURES VOLTAGE RATINGS

Fast Recvery Dide Replaces January 2000 versin, DS4213-4.0 DS4213-5.0 June 2004 APPLICATIONS Inductin Heating A.C. Mtr Drives Inverters And Chppers Welding High Frequency Rectificatin UPS KEY PARAMETERS

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... 3

Dual NPN Epitaxial Planar Transistr Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3 Switching time equivalent test circuits...

Type Package Pb-free Tape and Reel Information SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel SN7002N

SN72N SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to EC Q Halogen-free according to IEC6249-2-2 Gate pin Product Summary V DS 6 V R DS(on)

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 5 @ V GS = V.5 SDDE-.5 5 @ V GS

Preliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current

Cool MOS =Power Transistor Feature =New revolutionary high voltage technology Ultra low gate charge =Periodic avalanche rated Extreme dv/dt rated =Ultra low effective capacitances SPW47N6C3 Product Summary

C unless otherwise noted) CONDITIONS. 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) f=1mhz and applied 4V DC reverse voltage

rwnp Technlgy 1. Surface Munt Fast Recvery Rectifiers--1V Features atch prcess design, excellent pwer dissipatin ffers better reverse leakage current and thermal resistance. Lw prfile surface munted applicatin

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.

FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored

BAS70W / BAS70W-04 / BAS70W-05 / BAS70W-06. List... Package outline... Features Mechanical data... Maximum ratings...

SMD Small Signal Schttky Dide Frmsa MS S7W / S7W-4 / S7W-5 / S7W-6 List List... Package utline... Features... Mechanical data... Maximum ratings... Rating and characteristic curves... 3 Pinning infrmatin...

FEATURES SYMBOL QUICK REFERENCE DATA

FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching d g s V DSS = 2 V I D = 7.6 A R DS(ON) 23 mω GENERAL DESCRIPTION N-channel enhancement mode field-effect power

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A

PMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.

M3D88 Rev. 2 24 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

Dual N-/Dual P-Channel 3-V (D-S) MOSFETs V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) N-Channel 3 @ V GS = 2 V.8 to 2.5.85 P-Channel 3 2 @ V GS = 2 V 2 to 4.5.6 Low On-Resistance:.8/.6 Low Threshold:.5/

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

List... Package outline... Features Mechanical data... Maximum ratings... Switching time equivalent test circuits...

Dual NPN Epitaxial Planar Transistr Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Switching time equivalent test circuits... Rating and characteristic

Data Sheet. ACPL-8x7 Multi-Channel Full-Pitch Phototransistor Optocoupler. Description. Features. ACPL-827 pin layout.

ACPL-8x7 Multi-Channel ull-pitch Phttransistr Optcupler Data Sheet Lead (Pb) ree RHS 6 fully cmpliant RHS 6 fully cmpliant ptins available; -xxxe dentes a lead-free prduct Descriptin The ACPL-827 is a

Photocoupler Product Data Sheet LTV-817/ 827/ 847 ( M, S, S-TA, S-TA1, S-TP ) Series Spec No.: DS Effective Date: 03/04/2010 LITE-ON DCC

Phtcupler Prduct Data Sheet LTV-817/ 827/ 847 ( M, S, S-TA, S-TA1, S-TP ) Series Spec N.: DS-7-96-16 Effective Date: 3/4/2 Revisin: K LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technlgy Crp. / Optelectrnics

PMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.

M3D88 Rev. 1 5 August 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT23.

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...

SMD Transient Vltage Suppressr Fr ESD Prtectin Frmsa MS List List... Package utline... 1 Features... Mechanical data... imum ratings... Electrical characteristics... Rating and characteristic curves...

Technical Data Sheet Super Oval Type with Wide Angle LED

Features High luminus intensity utput Oval Shape Well defined spatial radiatin Wide viewing angle (2θ 1/2 ) : 7 / 4 The prduct itself will remain within RHS cmpliant versin ESD-withstand vltage: up t 4KV

TrenchMOS ultra low level FET

M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.

PMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET

M3D32 Rev. 1 13 November 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.

PRELIMINARY. TO-220 FULLPAK standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

l dvanced Prcess Technlgy l Islated Package l High Vltage Islatin = 2.5KVRMS l Sink t Lead Creepage Dist. = 4.8mm l Fully valanche Rated Descriptin Fifth Generatin HEXFETs frm Internatinal Rectifier utilize

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits

List... Package outline... Features Mechanical data... Rating and characteristic curves... Pinning information Marking...

Glass Sealed SMD Switching Dide Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... 2 Maximum ratings and Electrical characteristics... 2 Rating and characteristic curves... 3

FEATURES SYMBOL QUICK REFERENCE DATA

FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching Low thermal resistance g d s V DSS = V I D = 8 A R DS(ON) 9 mω GENERAL DESCRIPTION N-channel enhancement mode

2SJ332(L), 2SJ332(S)

Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from V source Suitable

Matched N-Channel JFET Pairs

Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip

Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

SPW47N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 I D 47 Ultra low gate charge Periodic avalanche rated

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

N-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)

M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise

BSS 223PW. ESD Class; JESD22-A114-HBM Class 0. Product Summary V DS -20 V R DS(on) 1.2 Ω I D A. Qualified according to AEC Q101

OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS -2 V R DS(on).2 Ω I D -.39

BSL211SP. Rev 2.0. Product Summary V DS -20 V R DS(on) 67 mω I D -4.7 A. Type Package Tape and reel BSL211SP P-TSOP6-6 H6327: 3000pcs/r.

OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Pb-free lead plating; RoHS compliant Qualified

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current

List... Package outline... Features Mechanical data Maximum ratings... Electrical Characteristics... 3

SMD Switching Dide Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... 2 Maximum ratings... 2 Thermal haracteristics... 3 Electrical haracteristics... 3 Rating and characteristic

LITE-ON TECHNOLOGY CORPORATION

FEATURES 1. This specificatin shall be applied t phtcupler. Mdel N. LTV-816 as an ptin. 2. Applicable Mdels (Business dealing name) * Dual-in-line package : LTV816-V : 1-channel type / LTV826-V : 2-channel

N-Channel Lateral DMOS FETs

N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) SDDE-/DE- Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 5 @ V GS = V.5 SDDE-.5

Rev 1.2. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D.

SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT-223 4 2 3 VPS563 Type Package Tape

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View

Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2. Description

SPN03N60C3. Cool MOS Power Transistor V T jmax 650 V

SPNN6C Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances R DS(on). Ω I D.7 A SOT-

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary

PHP7NQ60E; PHX7NQ60E

Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m

NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features

OptiMOS -5 Power-Transistor

IPCN4S5L-R9 OptiMOS -5 Power-Transistor Product Summary V DS 4 V R DS(on),max.9 mw Features OptiMOS - power MOSFET for automotive applications I D A PG-TDSON-8-34 N-channel - Enhancement mode - Logic Level

Maximum Ratings, at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current E AS. P tot 0.36 W

SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Type Package Tape and Reel Marking 1

BSS84P. SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated. Class 0

SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level valanche rated dv/dt rated Product Summary V DS -6 V R DS(on) 8 W I D -.17 PG-SOT-3 3 Qualified according to EC Q11 Halogen-free

Symbol Parameter Value Unit. Tstg Storage and operating junction temperature range - 40, T j - 40, + 125

SxH SENSTVE GATE SCR FEATURES T(RMS) =A V DRM = V t V Lw GT < µa K A G DESCRPTON The SxH series f SCRs uses a high perfrmance MESA GLASS PNPN technlgy. These parts are intended fr general purpse applicatins

Monolithic N-Channel JFET Dual

SST Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) Min (ms) I G Typ (pa) V GS V GS Max (mv) to 6. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.

M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in

2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

2N441 TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM:.6 W(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 6 V * Operating and storage junction

N-channel TrenchMOS transistor

PSMN2-5W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal resistance g d s V DSS = 5 V I D = 73 A R DS(ON) 2 mω GENERAL DESCRIPTION PINNING

LITE-ON TECHNOLOGY CORPORATION

Prperty f LITE-ON Only FEATURES * AC input respnse * High input-utput islatin vltage ( Vis = 5,Vrms ) * Lw cllectr dark current ( ICEO : MAX. 1-7 A at VCE = 2V ) * Current transfer rati ( CTR : MIN. 2%

Preliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 -

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List... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...

SMD NPN Transistr Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... Rating and characteristic curves... 2 2~3 4~6 Pinning infrmatin... 7 Marking... Suggested

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SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Gate pin1 Product Summary V DS 1 V R DS(on) 6 Ω I D.17 Drain pin 3 Source pin 2 PG-SOT23 3 1 2 VPS5161 Type Package

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IR Emitter and Detector Product Data Sheet LTE-C9306 Spec No.: DS Effective Date: 04/20/2007 LITE-ON DCC RELEASE

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NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are