Package Code. K : SOP-8 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel (2500ea/reel)

Transcription

1 N-Chnnel Enhncement Mode MOSFET Fetures 30V/A, R DS(ON) = V GS = V R DS(ON) = V GS = 4.5V Relible nd Rugged Led Free nd Green Devices Avilble (RoHS Complint) 0% UIS Tested Pin Description D D D D S S S G Top View of SOP-8 ( 5,6,7,8 ) D D D D Applictions Power Mngement in Notebook Computer, Portble Equipment nd Bttery Powered Systems. (4) G S S S (1, 2, 3) N-Chnnel MOSFET Ordering nd Mrking Informtion SM4838NS SM4838NS K : SM4838 XXXXX Assembly Mteril Hndling Code Temperture Rnge Pckge Code Pckge Code K : SOP-8 Operting Junction Temperture Rnge C : -55 to 150 o C Hndling Code TR : Tpe & Reel (2500e/reel) Assembly Mteril G : Hlogen nd Led Free Device XXXXX - Lot Code Note : SINOPOWER led-free products contin molding compounds/die ttch mterils nd 0% mtte tin plte termintion finish; which re fully complint with RoHS. SINOPOWER led-free products meet or exceed the ledfree requirements of IPC/JEDEC J-STD-020D for MSL clssifiction t led-free pek reflow temperture. SINOPOWER defines Green to men led-free (RoHS complint) nd hlogen free (Br or Cl does not exceed 900ppm by weight in homogeneous mteril nd totl of Br nd Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to mke chnges to improve relibility or mnufcturbility without notice, nd dvise customers to obtin the ltest version of relevnt informtion to verify before plcing orders. 1

2 Absolute Mximum Rtings (T A = 25 C Unless Otherwise Noted) Symbol Prmeter Rting Unit V DSS Drin-Source Voltge 30 V GSS Gte-Source Voltge ±20 I D I DM I S I AS b E AS b Continuous Drin Current (V GS =V) T A =25 C T A =70 C 8 300ms Pulsed Drin Current (V GS =V) 40 Diode Continuous Forwrd Current 1 Avlnche Current (Single Pulse) 9 Avlnche Energy, Single Pulse (L=0.5mH) 20 mj T J Mximum Junction Temperture 150 T STG Storge Temperture Rnge -55 to 150 P D R qja Mximum Power Dissiption Therml Resistnce-Junction to Ambient T A =25 C 3.1 T A =70 C 2.0 t s 32 Stedy Stte 65 R qjl Therml Resistnce-Junction to Led Stedy Stte 20 Note :Surfce Mounted on 1in 2 pd re, t sec. Mximum Power dissiption is clculted from R qja (worst) =40 C/W under t s. Note b:uis tested nd pulse width limited by mximum junction temperture 150 o C (initil temperture Tj=25 o C). V A C W C/W Electricl Chrcteristics (T A = 25 C Unless Otherwise Noted) Symbol Prmeter Test Conditions SM4838NSK Min. Typ. Mx. Unit Sttic Chrcteristics BV DSS Drin-Source Brekdown Voltge V GS =0V, I DS =250mA V I DSS V DS =24V, V GS =0V Zero Gte Voltge Drin Current ma T J =85 C V GS(th) Gte Threshold Voltge V DS =V GS, I DS =250mA V I GSS Gte Lekge Current V GS =±20V, V DS =0V - - ±0 na R DS(ON) V GS =V, I DS =8A Drin-Source On-stte Resistnce mw V GS =4.5V, I DS =8A Gfs Forwrd Trnsconductnce V DS =5V, I DS =8A S Diode Chrcteristics V SD Diode Forwrd Voltge I SD =1A, V GS =0V V trr b Reverse Recovery Time ns I Qrr b SD =8A, dl SD /dt=0a/ms Reverse Recovery Chrge nc 2

3 Electricl Chrcteristics (Cont.) (T A = 25 C Unless Otherwise Noted) Symbol Prmeter Test Conditions Dynmic Chrcteristics b SM4838NSK Min. Typ. Mx. R G Gte Resistnce V GS =0V,V DS =0V,F=1MHz W C iss Input Cpcitnce V GS =0V, C oss Output Cpcitnce V DS =15V, Reverse Trnsfer Cpcitnce Frequency=1.0MHz C rss t d(on) Turn-on Dely Time t r Turn-on Rise Time V DD =15V, R L =15W, - 17 I DS =1A, V GEN =V, t d(off) Turn-off Dely Time R G =6W Turn-off Fll Time t f Gte Chrge Chrcteristics b Q g Totl Gte Chrge V DS =15V, V GS =V, I DS =8A Totl Gte Chrge Q gth Threshold Gte Chrge V DS =15V, V GS =4.5V, Q gs Gte-Source Chrge I DS =8A Q gd Gte-Drin Chrge Note : Pulse test ; pulse width 300 ms, duty cycle 2%. Note b : Gurnteed by design, not subject to production testing Unit pf ns nc 3

4 Typicl Operting Chrcteristics Power Dissiption Drin Current Ptot - Power (W) ID - Drin Current (A) T A =25 o C T A =25 o C,V G =V Tj - Junction Temperture ( C) Tj - Junction Temperture Sfe Opertion Are Therml Trnsient Impednce ID - Drin Current (A) Rds(on) Limit 300ms 1ms ms 0ms 1s DC T A =25 o C Normlized Trnsient Therml Resistnce Single Pulse 0.2 Duty = 0.5 Mounted on 1in 2 pd R qja : 50 o C/W E-4 1E VDS - Drin - Source Voltge (V) Squre Wve Pulse Durtion (sec) 4

5 Typicl Operting Chrcteristics (Cont.) Output Chrcteristics Drin-Source On Resistnce V GS =4,4.5,5,6,7,8,9,V 24 ID - Drin Current (A) V V 5 2.5V RDS(ON) - On - Resistnce (mw) V GS =4.5V V GS =V VDS - Drin - Source Voltge (V) ID - Drin Current (A) Gte-Source On Resistnce Gte Threshold Voltge 40 I DS =8A 1.6 I DS =250mA RDS(ON) - On - Resistnce (mw) Normlized Threshold Voltge VGS - Gte - Source Voltge (V) Tj - Junction Temperture ( C) 5

6 Typicl Operting Chrcteristics (Cont.) Drin-Source On Resistnce Source-Drin Diode Forwrd V GS = V I DS = 8A 40 Normlized On Resistnce IS - Source Current (A) 1 T j =150 o C T j =25 o C 0.4 R j =25 o C: 13.5mW Tj - Junction Temperture ( C) VSD - Source - Drin Voltge (V) Cpcitnce Gte Chrge Frequency=1MHz 9 V DS =15V I DS =8A C - Cpcitnce (pf) Crss Coss Ciss VGS - Gte-source Voltge (V) VDS - Drin-Source Voltge (V) QG - Gte Chrge (nc) 6

7 Typicl Operting Chrcteristics (Cont.) 60 Trnsfer Chrcteristics 50 I D - Drin Current (A) T j =125 o C T j =25 o C T j =-55 o C V GS - Gte-Source Voltge (V) 7

8 Avlnche Test Circuit nd Wveforms VDS L tp VDSX(SUS) DUT IAS VDS RG VDD VDD tp IL 0.01W EAS tav Switching Time Test Circuit nd Wveforms VDS DUT RD VDS 90% RG VGS VDD tp % VGS td(on) tr td(off) tf 8

9 Pckge Informtion SOP-8 D -T- SEATING PLANE < 4 mils SEE VIEW A E1 E h X 45 e b c A1 A2 A VIEW A L 0.25 GAUGE PLANE SEATING PLANE S Y M B MILLIMETERS O L MIN. MAX. A A1 c D E E1 e h L b SOP BSC BSC MIN INCHES MAX. A Note: 1. Follow JEDEC MS-012 AA. 2. Dimension D does not include mold flsh, protrusions or gte burrs. Mold flsh, protrusion or gte burrs shll not exceed 6 mil per side. 3. Dimension E does not include inter-led flsh or protrusions. Inter-led flsh nd protrusions shll not exceed mil per side. - RECOMMENDED LAND PATTERN UNIT: mm 9

10 Crrier Tpe & Reel Dimensions OD0 P0 P2 P1 A H A E1 OD1 B A T B0 W F K0 B A0 SECTION A-A SECTION B-B d T1 Appliction A H T1 C d D W E1 F 330.0± MIN MIN MIN. 12.0± ±0. 5.5±0.05 SOP-8 P0 P1 P2 D0 D1 T A0 B0 K0 4.0±0. 8.0±0. 2.0± MIN ± ± ± (mm)

11 Tping Direction Informtion SOP-8 USER DIRECTION OF FEED Clssifiction Profile 11

12 Clssifiction Reflow Profiles Profile Feture Sn-Pb Eutectic Assembly Pb-Free Assembly Prehet & Sok Temperture min (T smin ) Temperture mx (T smx ) Time (T smin to T smx ) (t s ) 0 C 150 C seconds 150 C 200 C seconds Averge rmp-up rte (T smx to T P ) 3 C/second mx. 3 C/second mx. Liquidous temperture (T L ) Time t liquidous (t L ) Pek pckge body Temperture (T p )* Time (t P )** within 5 C of the specified clssifiction temperture (T c ) 183 C seconds 217 C seconds See Clssifiction Temp in tble 1 See Clssifiction Temp in tble 2 20** seconds 30** seconds Averge rmp-down rte (T p to T smx ) 6 C/second mx. 6 C/second mx. Time 25 C to pek temperture 6 minutes mx. 8 minutes mx. * Tolernce for pek profile Temperture (T p ) is defined s supplier minimum nd user mximum. ** Tolernce for time t pek profile temperture (t p ) is defined s supplier minimum nd user mximum. Tble 1. SnPb Eutectic Process Clssifiction Tempertures (Tc) Pckge Volume mm 3 Thickness <350 Tble 2. Pb-free Process Clssifiction Tempertures (Tc) Volume mm <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Pckge Thickness Volume mm 3 <350 Volume mm Volume mm 3 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Relibility Test Progrm Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 00 Hrs, 80% of VDS Tjmx HTGB JESD-22, A8 00 Hrs, 0% of VGS Tjmx PCT JESD-22, A2 168 Hrs, 0%RH, 2tm, 121 C TCT JESD-22, A4 500 Cycles, -65 C~150 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Prk, Hsinchu, 30078, Tiwn TEL: Fx: