CM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack

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1 IC... 1 CES... 1 Insulated Type -elements in a pack PPLICTION UPS & General purpose inverters, etc OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm,b HOUSING Type (J. S. T. Mfg. Co. Ltd) : HR-N B : HR-N Tc measured point (The side of Cu base plate) ± Tc measured point (The side of Cu base plate) C CE ±. ±. B -f6. MOUNTING HOLES PPS G E E E1 G ±. ±. ±. 9-M6 NUTS ± LBEL.1 C CE1 E CIRCUIT DIGRM G1 E1 E G Mar.

2 MXIMUM RTINGS ( = C) Symbol CES GES IC ICM IE (Note 1) IEM (Note 1) PC (Note ) Tstg iso Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight Parameter Collector current Emitter current Torque strength Conditions G-E Short C-E Short TC = C Pulse (Note ) TC = C Pulse (Note ) TC = C Main terminal to base plate, C 1 min. Main Terminal M6 Mounting holes M6 Typical value Ratings 1 ± ~ +1 ~ +1. ~.. ~. 1 Unit W C C N m N m g ELECTRICL CHRCTERISTICS ( = C) Symbol Parameter Test conditions ICES Collector cutoff current CE = CES, GE = Min. Limits Typ. Max. 1 Unit m GE(th) Gate-emitter threshold voltage IC = 1m, CE = 1 6 Gate leakage current GE = CES, CE = Collector-emitter saturation voltage = C = 1 C IC = 1, GE = 1 Module lead resistance Ic = 1, terminal-chip Input capacitance CE = 1 Output capacitance GE = Reverse transfer capacitance Total gate charge CC = 6, IC = 1, GE = 1 Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time CC = 6, IC = 1 GE1 = GE = 1 RG =.Ω, switching operation IE = 1 Reverse recovery charge Emitter-collector voltage Thermal resistance *1 Contact thermal resistance Thermal resistance IE = 1, GE = IGBT part (1/ module) FWDi part (1/ module) Case to fin, Thermal compound applied * (1/ module) Tc measured point is just under the chips (IGBT part) Tc measured point is just under the chips (FWDi part) External gate resistance Note 1. IE, EC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).. Pulse width and repetition rate should be such that the device junction temp. () does not exceed max rating.. Junction temperature () should not increase beyond 1 C. * 1 : Tc measured point is indicated in OUTLINE DRWING. * : Typical value is measured by using Shin-etsu Silicone G-6. : If you use this value, Rth(f-a) should be measured just under the chips. * IGES CE(sat) R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) EC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c )Q Rth(j-c )R RG *. *. µ mω nf nc ns ns µc C/W Ω Mar.

3 PERFORMNCE CURES COLLECTOR CURRENT IC () 1 1 OUTPUT CHRCTERISTICS (TYPICL) GE = 1 = C COLLECTOR-EMITTER OLTGE CE () COLLECTOR CURRENT () 1 TRNSFER CHRCTERISTICS (TYPICL) CE = 1 = C = 1 C 1 16 GTE-EMITTER OLTGE GE () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () 1 COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTICS (TYPICL) GE = 1 = C = 1 C 1 COLLECTOR-EMITTER STURTION OLTGE CE (sat) () 1 6 COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTICS (TYPICL) = C IC = 1 IC = IC = COLLECTOR CURRENT IC () GTE-EMITTER OLTGE GE () EMITTER CURRENT IE () 1 1 FREE-WHEEL DIODE FORWRD CHRCTERISTICS (TYPICL) = C = 1 C 1 1 CPCITNCE Cies, Coes, Cres (nf) CPCITNCE CE CHRCTERISTICS (TYPICL) Cies Coes GE = Cres EMITTER-COLLECTOR OLTGE EC () COLLECTOR-EMITTER OLTGE CE () Mar.

4 SWITCHING TIMES (ns) 1 1 HLF-BRIDGE SWITCHING CHRCTERISTICS (TYPICL) tf td(off) td(on) 1 CC = 6 GE = ±1 tr RG =.Ω = 1 C REERSE RECOERY TIME trr (ns) REERSE RECOERY CURRENT lrr () REERSE RECOERY CHRCTERISTICS OF FREE-WHEEL DIODE (TYPICL) 1 1 CC = 6 GE = ±1 RG =.Ω = 1 C Irr trr COLLECTOR CURRENT IC () EMITTER CURRENT IE () NORMLIZED TRNSIENT THERML IMPEDNCE Zth (j c) ( C/W) TRNSIENT THERML IMPEDNCE CHRCTERISTICS (IGBT part & FWDi part) IGBT part: Per unit base = Rth(j c) =. C/W FWDi part: Per unit base = Rth(j c) =. C/W Single Pulse TC = C GTE-EMITTER OLTGE GE () 16 1 IC = 1 GTE CHRGE CHRCTERISTICS (TYPICL) CC = CC = 6 6 TMIE (s) GTE CHRGE QG (nc) IC-ESW (TYPICL) 1 Esw(off) Esw(on) CC = 6 GE = ±1 = 1 C RG =.Ω RG-ESW (TYPICL) Esw(off) Esw(on) CC = 6 GE = ±1 = 1 C IC = IC () RG (Ω) Mar.

5 Err (mj/pulse) 1 IC-Err (TYPICL) Err 1 CC = 6 GE = ±1 = 1 C RG =.Ω RG-Err (TYPICL) Err CC = 6 GE = ±1 = 1 C IC = IE () RG (Ω) Mar.