CM75MX-12A. APPLICATION General purpose Inverters, Servo Amplifiers CM75MX-12A
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1 CMMX- CMMX-... CS...6 CIB (-phase Converter + -phase Inverter + Brake) Flatbase Type / Insulated Package / Copper base plate RoHS Directive compliant PPLTION General purpose Inverters, Servo mplifiers OUTLIN DRWING & CIRCUIT DIGRM. 8. ± φ. MOUNTING HOLS. (.8)..6 Dimensions in mm (.4). TRMINL t = ± φ4. φ. φ. SCTION.8 (.) () Pin positions with tolerance φ.. LBL P(~) (4~) TH(9) GuP(49) GvP(44) GwP(9) TH(8) up(48) vp(4) wp(8) R(~) S(~6) T(9~) B(4~) U(~4) (~8) W(~) GB() N(~8) N(6~6) GuN(4) GvN() GwN() () * Use both terminals (R/S/T/P/N//B/N/U//W) to the external connection. CIRCUIT DIGRM NTC Division of Dimension Tolerance. to ±. over to 6 ±. over 6 to ±. over to ±.8 over to 4 ±. Jan. 9
2 CMMX- BSOLUT MXIMUM RTINGS (Tj = C, unless otherwise specified) INRTR PRT Rating CS GS RM PC I (Note.) IRM(Note.) Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation mitter current (Free wheeling diode forward current) G- Short C- Short DC, TC = C Pulse TC = C TC = C Pulse (Note. 4) (Note., ) (Note. 4) 6 ± 8 W BRK PRT CS GS Collector-emitter voltage Gate-emitter voltage G- Short C- Short DC, TC = 9 C Collector current RM Pulse PC RRM(Note.) Maximum collector dissipation Repetitive peak reverse voltage TC = C IF (Note.) TC = C Forward current IFRM(Note.) Pulse (Note. 4) (Note., ) (Note. 4) Rating 6 ± 8 6 W CONRTR PRT RRM a IO IFSM I t Repetitive peak reverse voltage Recommended C input voltage DC output current Surge forward current Current square time -phase full wave rectifying, TC = 4 C The sine half wave cycle peak value, f = 6Hz, non-repetitive alue for one cycle of surge current Rating 8 4 rms S MODUL Tj Tstg iso Junction temperature Storage temperature Isolation voltage Base plate flatness Terminals to base plate, f = 6Hz, C minute On the centerline X, Y (Note. 8) Torque strength Mounting M screw Weight (Typical) Note. 8: The base plate flatness measurement points are in the following figure. Rating 4 ~ + 4 ~ + ± ~ +. ~. C rms μm N m g Jan. 9
3 CMMX- LCTRL CHRCTRISTS (Tj = C, unless otherwise specified) INRTR PRT S G(th) IGS C(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.) Qrr (Note.) C(Note.) Rth(j-c)Q Rth(j-c)R RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge mitter-collector voltage Thermal resistance (Junction to case) Internal gate resistance xternal gate resistance C = CS, G = =.m, C = ±G = GS, C = =, G = =, G = C = G = CC =, =, G = CC =, = G = ±, RG = 8.Ω (I = ) I =, G = I =, G = per IGBT per free wheeling diode TC = C, per switch Tj = C Tj = C Chip Tj = C Tj = C Chip m μ nf nc ns μc K/W Ω BRK PRT S G(th) IGS C(sat) Cies Coes Cres QG IRRM(Note.) FM(Note.) Rth(j-c)Q Rth(j-c)R RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current Forward voltage drop Thermal resistance (Junction to case) Internal gate resistance xternal gate resistance C = CS, G = = m, C = ±G = GS, C = =, G = =, G = C = G = CC =, =, G = R = RRM IF = IF = per IGBT per Clamp diode TC = C Tj = C Tj = C Chip Tj = C Tj = C Chip m μ nf nc m K/W Ω CONRTR PRT IRRM F Rth(j-c) Repetitive peak reverse current Forward voltage drop Thermal resistance (Junction to case) R = RRM, Tj = C IF = per Diode..6.4 m K/W Jan. 9
4 CMMX- NTC THRMISTOR PRT R ΔR/R B(/) P Zero power resistance Deviation of resistance B constant Power dissipation TC = C TC = C, R = 49Ω pproximate by equation TC = C (Note. ) kω % K mw MODUL Rth(c-f) Contact thermal resistance (Case to fin) Thermal grease applied per module (Note. ). K/W Note.: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) : Typical value is measured by using thermally conductive grease of λ =.9W/(m K). : I, IRM, C, trr, Qrr and rr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, F, RRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. : Junction temperature (Tj) should not increase beyond C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for C(sat) and C) R : B(/) = In( )/( ) R T T R: resistance at absolute temperature T [K]; T = [ C]+. = 98. [K] R: resistance at absolute temperature T [K]; T = [ C]+. =. [K] Chip Location (Top view) (.) () Dimensions in mm (tolerance: ±mm) (6) () C R R N C R R P T B r CR CR SN TN T r T D i UP r T P B r WP r Th D UP i T D i D UN r T WP i TW r P N r N CR CR DU i D i D i SP TP N N WN (Tr/UP, Tr/P, Tr/WP, Th).6 (Di/Br).6 (Tr/WN) 4. (Di/UP, Di/P, Di/WP). (Tr/UN, Tr/N) 4. (Di/WN) 4. (Di/UN, Di/N) LBL SID ach mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor Jan. 9 4
5 MITSUBISHI IGBT MODULS CMMX- G = GuP G = GuP up up U U B G = GuN G = GuN G = GB N N N P side Inverter part Tr (example of U arm) G** = (GvP-vP, GwP-wP, GvN-, GwN-, GB-) N side Inverter part Tr (example of U arm) G** = (GvP-vP, GwP-wP, GvN-, GwN-, GB-) C(sat) test circuit Br Tr G** = (GuP-uP, GvP-vP, GwP-wP, GuN-, GvN-, GwN-) G = GuP I G = GuP IF up U up U B G = GuN G = GuN I G = GB N N N P side Inverter part Di (example of U arm) G** = (GvP-vP, GwP-wP, GvN-, GwN-, GB-) N side Inverter part Di (example of U arm) G** = (GvP-vP, GwP-wP, GvN-, GwN-, GB-) C/FM test circuit Br Di G** = (GuP-uP, GvP-vP, GwP-wP, GuN-, GvN-, GwN-) rm I G 9% % I trr G Load + CC 9% t +G G RG G C td(on) tr td(off) tf % Irr / Irr Qrr = / Irr trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 9
6 CMMX- PRFORMNC CURS COLLCTOR CURRNT () G = OUTPUT CHRCTRISTS Tj = C COLLCTOR-MITTR STURTION OLTG C(sat) ()... COLLCTOR-MITTR STURTION OLTG CHRCTRISTS G =. Tj = C Tj = C COLLCTOR-MITTR OLTG C () COLLCTOR CURRNT () COLLCTOR-MITTR STURTION OLTG C(sat) () COLLCTOR-MITTR STURTION OLTG CHRCTRISTS Tj = C = = = MITTR CURRNT I () FR WHLING DIOD FORWRD CHRCTRISTS Tj = C Tj = C GT-MITTR OLTG G () MITTR-COLLCTOR OLTG C () CPCITNC (nf) CPCITNC CHRCTRISTS Cies Coes Cres G = SWITCHING TIM (ns) HLF-BRIDG SWITCHING CHRCTRISTS 4 tf td(off) td(on) Conditions: CC = G = ± tr RG = 8.Ω Tj = C COLLCTOR-MITTR OLTG C () COLLCTOR CURRNT () Jan. 9 6
7 CMMX- SWITCHING TIM (ns) HLF-BRIDG SWITCHING CHRCTRISTS tf td(off) td(on) Conditions: tr CC = G = ± = Tj = C SWITCHING LOSS (mj/pulse) HLF-BRIDG SWITCHING CHRCTRISTS Conditions: CC = G = ± RG = 8.Ω Tj = C off rr on GT RSISTNC RG (Ω) COLLCTOR CURRNT () MITTR CURRNT I () SWITCHING LOSS (mj/pulse) HLF-BRIDG SWITCHING CHRCTRISTS Conditions: CC = G = ±, I = Tj = C off on rr lrr (), trr (ns) RRS RCORY CHRCTRISTS OF FR WHLING DIOD Conditions: CC = G = ± RG = 8.Ω Tj = C trr Irr GT RSISTNC RG (Ω) MITTR CURRNT I () GT-MITTR OLTG G () GT CHRG CHRCTRISTS = CC = CC = NORMLIZD TRNSINT THRML IMPDNC Zth(j c) Single pulse TC = C TRNSINT THRML IMPDNC CHRCTRISTS Inverter IGBT part : Per unit base = Rth(j c) =.44K/W Inverter FWDi part : Per unit base = Rth(j c) =.8K/W Converter-Di part : Per unit base = Rth(j c) =.4K/W Brake IGBT part : Per unit base = Rth(j c) =.44K/W Brake Clamp-Di part : Per unit base = Rth(j c) =.8K/W 4 GT CHRG QG (nc) TIM (s) Jan. 9
8 CMMX- FORWRD CURRNT lf () RCTIFIR DIOD FORWRD CHRCTRISTS (TYPL) Converter part Tj = C Tj = C.... COLLCTOR-MITTR STURTION OLTG C(sat) ()... COLLCTOR-MITTR STURTION OLTG CHRCTRISTS (TYPL) Brake part G =. Tj = C Tj = C FORWRD OLTG F () COLLCTOR CURRNT () FORWRD CURRNT IF () CLMP DIOD FORWRD CHRCTRISTS (TYPL) Brake part Tj = C Tj = C FORWRD OLTG F () Jan. 9 8
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