not Recommend for New Design TM55DZ/CZ-M,-H MEDIUM POWER GENERAL USE

Transcription

1 PPLICTION DC motor control, NC equipment, C motor control, Contactless switches, E lectric furnace temperature control, Light dimmers OUTLINE DRWING & CIRCUIT DIGRM 9. K G K M G1 φ Tab#, t= IT () verage on-state current... RRM Repetitive peak reverse voltage... 0/0 DRM Repetitive peak off-state voltage... 0/0 DOUBLE RMS Insulated Type UL Recognized Yellow Card No. E6 (N) File No. E1 (DZ) 1K CR1 K1 LBEL (CZ) 1 CR1 K1K CR CR Dimensions in mm K G K1 G1 K G K1 G1

2 BSOLUTE MXIMUM RTINGS RRM RSM R (DC) DRM DSM D (DC) IT (RMS) IT () ITSM I t di/dt PGM PG () FGM RGM IFGM Tj Tstg iso Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage RMS on-state current verage on-state current Surge (non-repetitive) on-state current I t for fusing Critical rate of rise of on-state current Peak gate power dissipation verage gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current M Conditions Single-phase, half-wave 1 conduction, TC=86 C One half cycle at Hz, peak value alue for one cycle of surge current D=1/DRM, IG=1.0, Tj=1 C Charged part to case Main terminal screw M Mounting screw M6 Typical value H Ratings Junction temperature ~+1 Storage temperature ~+1 Isolation voltage Mounting torque Weight ELECTRICL CHRCTERISTICS IRRM IDRM TM dv/dt GT GD oltage class ~1.96 1~0 1.96~.94 IGT Gate trigger current Tj= C, D=6, RL=Ω 1 Rth (j-c) Rth (c-f) Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=1 C, RRM applied Tj=1 C, DRM applied Test conditions Tj=1 C, ITM=16, instantaneous meas. Tj=1 C, D=/DRM Tj= C, D=6, RL=Ω Tj=1 C, D=1/DRM Junction to case (per 1/ module) 0~0 1 Limits Case to fin, conductive grease applied (per 1/ module) Measured with a 00 megohmmeter between main terminal and case Min Typ. Max s /µs W W C C N m kg cm N m kg cm g m m /µs m C/W C/W MΩ

3 PERFORMNCE CURES () GTE OLTGE () ERGE ON-STTE POWER DISSIPTION (W) FGM= Tj=1 C 1 PGM=.0W GT=.0 PG()= 0.0W 0 IGT= m Tj= C 1 GD= MXIMUM ON-STTE CHRCTERISTIC ON-STTE OLTGE () GTE CHRCTERISTICS GTE CURRENT (m) =0 1 IFGM=.0 MXIMUM ERGE ON-STTE POWER DISSIPTION (SINGLE PHSE HLFWE) RESISTIE, INDUCTIE SURGE (NON-REPETITIE) () TRNSIENT THERML IMPEDNCE ( C/W) MXIMUM TRNSIENT THERML IMPEDNCE (JUNCTION TO CSE) RTED SURGE (NON-REPETITIE) CONDUCTION TIME (CYCLES T Hz) TIME (s) 1 =0 1 0 LIMITING LUE OF THE ERGE (SINGLE PHSE HLFWE) ERGE () RESISTIE, INDUCTIE ERGE ()

4 ERGE ON-STTE POWER DISSIPTION (W) ERGE ON-STTE POWER DISSIPTION (W) ON-STTE POWER DISSIPTION (W) ( MODULE) MXIMUM ERGE ON-STTE POWER DISSIPTION (RECTNGULR WE) DC 0 1 =0 0 RESISTIE, INDUCTIE = ERGE () MXIMUM ERGE ON-STTE POWER DISSIPTION (SINGLE PHSE FULLWE C) RESISTIE, INDUCTIE =0 MODULE RMS () MXIMUM ON-STTE POWER DISSIPTION (SINGLE PHSE FULLWE RECTIFIED) 1 RESISTIE, INDUCTIE ( MODULE) 0 =0 1 0 DC LIMITING LUE OF THE RMS (SINGLE PHSE FULLWE C) 1 11 MODULE =0 9 RESISTIE, 1 8 INDUCTIE LIMITING LUE OF THE DC OUTPUT CURRENT (SINGLE PHSE FULLWE RECTIFIED) LIMITING LUE OF THE ERGE (RECTNGULR WE) RESISTIE, INDUCTIE ERGE () RMS () =0 1 RESISTIE, INDUCTIE (PER TWO MODULES) (PER TWO MODULES)

5 ON-STTE POWER DISSIPTION (W) ( MODULE) MXIMUM ON-STTE POWER DISSIPTION (THREE PHSE FULLWE RECTIFIED) 1 1 =0 0 RESISTIE, INDUCTIE (PER THREE MODULES) ( MODULE) LIMITING LUE OF THE DC OUTPUT CURRENT (THREE PHSE FULLWE RECTIFIED) 0 RESISTIE, INDUCTIE = (PER THREE MODULES)