Thyristors. Sxx10xSx & Sxx10x Series. 10 Amp Sensitive & Standard SCRs. Description
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1 Sxx10xSx & Sxx10x Series RoHS Description This Sxx10x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive discharge ignitions. These SCRs have a low gate current trigger level of 0.2 to 15 m at approximately 1.5V, with a sensitive version of this series having a gate trigger current less than 500µ. The sensitive gate SCR version is easily triggered by sense coils, proximity switches, and microprocessors. Features & Benefits Main Features Symbol Value Unit I T(RMS) 10 V DRM /V RRM 400 to 0 V I GT 0.2 to 15 m Halogen free and RoHS compliant Glass passivated junctions pplications Voltage capability up to 0 V Surge capability up to at 60 Hz half cycle dditional Information Datasheet Resources Samples Typical applications includes capacitive discharge system for motorcycle engine CDI, portable generator engine ignition, strobe lights and nailers, as well as generic rectifiers, battery voltage regulators and converters. lso C control & rectification for power tools, home/brown goods, white goods appliances and 2-wheeler rectifier/ battery regulators. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. Schematic Symbol K G
2 bsolute Maximum Ratings Sensitive SCRs Symbol Parameter Test Conditions Value Unit Sxx10LSy = 80 C I T(RMS) RMS on-state current Sxx10RSy /Sxx10NSy Sxx10DSy = 95 C 10 Sxx10VSy Sxx10LSy = 80 C I T(V) verage on-state current Sxx10RSy /Sxx10NSy Sxx10DSy Sxx10VSy = 95 C 6.4 I TSM Peak non-repetitive surge current single half cycle; f = 50Hz; (initial) = 25 C 83 single half cycle; f = 60Hz; (initial) = 25 C I 2 t I 2 t Value for fusing t p = 8.3 ms 41 2 s di/dt Critical rate of rise of on-state current f = 60 Hz ; = 110 C /μs I GM Peak gate current = 110 C 1 P G(V) verage gate power dissipation = 110 C 0.1 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to 110 C Note: xx = voltage, y = sensitivity bsolute Maximum Ratings Standard SCRs Symbol Parameter Test Conditions Value Unit Sxx10L = 95 C I T(RMS) RMS on-state current Sxx10R / Sxx10N 10 Sxx10D = 105 C Sxx10V Sxx10L = 95 C I T(V) verage on-state current Sxx10R / Sxx10N 6.4 Sxx10D = 105 C Sxx10V I TSM Peak non-repetitive surge current single half cycle; f = 50Hz; (initial) = 25 C 83 single half cycle; f = 60Hz; (initial) = 25 C I 2 t I 2 t Value for fusing t p = 8.3 ms 41 2 s di/dt Critical rate-of-rise of on-state current f = 60 Hz = 125 C /μs I GM Peak gate current = 125 C 2 P G(V) verage gate power dissipation = 125 C 0.5 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to 125 C Note: xx = voltage
3 Electrical Characteristics ( = 25 C, unless otherwise specified) Sensitive SCRs Symbol Test Conditions Sxx10xS2 Value Sxx10xS3 I GT V D = 6V R L = Ω MX μ V GT V D = 6V R L = Ω MX. 0.8 V dv/dt V D = V DRM ; R GK = 1kΩ ; = 110 C TYP. 8 V/μs V GD V D = V DRM ; R L = 3.3 kω; = 110 C MIN. 0.2 V V GRM I GR = 10μ MIN. 6 V I H I T = 20m (initial) MX. 6 8 m t q (1) MX μs t gt I G = 2 x I GT ; PW = 15µs; I T = 12 TYP. 4 5 μs NOTE: xx = voltage, x = package (1) I T =2; t p =50µs; dv/dt=5v/µs; di/dt=-30/µs Unit Electrical Characteristics ( = 25 C, unless otherwise specified) Standard SCRs Symbol Test Conditions Value Sxx10x Unit I GT V D = 12V R L = 60 Ω MX. 15 m V GT V D = 12V R L = 60 Ω MX. 1.5 V 400V 350 V D = V DRM ; gate open; = C 600V V 250 dv/dt 0V MIN. V/μs 400V 250 V D = V DRM ; gate open; = 125 C 600V V 200 V GD V D = V DRM ; R L = 3.3 kω; = 125 C MIN. 0.2 V I H I T = 200m (initial) MX. 30 m t q (1) MX. 35 μs t gt I G = 2 x I GT ; PW = 15µs; I T = 20 TYP. 2 μs NOTE: xx = voltage, x = package (1) I T =2; t p =50µs; dv/dt=5v/µs; di/dt=-30/µs Static Characteristics Symbol Test Conditions Value Unit V TM I T = 20; t p = 380 µs MX. 1.6 V Sxx10xyy = 25 C V 5 = 110 C V 250 I DRM / I RRM V DRM / V RRM = 25 C V 10 0V MX. 20 μ Sxx10x = C V 200 0V 3000 = 125 C V 500 Note: xx = voltage, x = package, yy = sensitivity
4 Thermal Resistances Symbol Parameter Value Unit Sxx10RSy / Sxx10NSy 1.6 Sxx10LSy 3.0 Sxx10VSy 1.7 R θ(j-c) Junction to case (C) Sxx10DSy 1.45 Sxx10R / Sxx10N 1.6 C/W Sxx10L 3.0 Sxx10V 1.7 Sxx10D 1.45 Sxx10RSy 40 Sxx10LSy 65 R θ(j-) Junction to ambient Sxx10VSy 85 Sxx10R 40 C/W Sxx10L 50 Sxx10V 70 Note: xx = voltage, y = sensitivity Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature (Sensitive SCR) Figure 2: Normalized DC Gate Trigger Current vs. Junction Temperature (Standard SCR) Ratio of I GT / I GT ( = 25 C) Ratio of I GT / I GT ( = 25 C) Junction Temperature ( ) -- ( C) Junction Temperature ( ) -- ( C) 125
5 Figure 3: Normalized DC Gate Trigger Voltage vs. Junction Temperature Figure 4: Normalized DC Holding Current vs. Junction Temperature Ratio of V GT / V GT ( = 25 C) Ratio of I H / I H ( = 25 C) Junction Temperature ( ) -- ( C) Junction Temperature ( ) -- ( C) Figure 5: On-State Current vs. On-State Voltage (Typical) Figure 6: Power Dissipation (Typical) vs. RMS On-State Current Instantaneous On-state Current (i T ) mps = 25ºC verage On-State Power Dissipation [P D(V) ] -- (Watts) Instantaneous On-state Voltage (v T ) Volts RMS On-State Current [I T(RMS) ] -- (mps) Figure 7: Maximum llowable Case Temperature vs. RMS On-State Current Figure 8: Maximum llowable Case Temperature vs. verage On-State Current Maximum llowable Case Temperature ( ) - C Sxx10L 105 Sxx10RSy/ Sxx10NSy Sxx10RSy Sxx10DSy 95 Sxx10VSy 90 Sxx10LSy CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive 75 CONDUCTION NGLE: 180 FREE IR RTING RMS On-State Current [I T(RMS) ] - mps Sxx10R Sxx10D Sxx10V Maximum llowable Case Temperature ( ) - C Sxx10L Sxx10R/ Sxx10N Sxx10R Sxx10D Sxx10V Sxx10RSy/ Sxx10RSy Sxx10NSy 95 Sxx10DSy Sxx10VSy 90 Sxx10LSy 85 CURRENT WVEFORM: Sinusoidal 80 LOD: Resistive or Inductive 75 CONDUCTION NGLE: 180 FREE IR RTING verage On-State Current [I T(VE) ] - mps
6 Figure 9: Maximum llowable mbient Temperature vs. RMS On-State Current Figure 10: Maximum llowable mbient Temperature vs. verage On-State Current Maximum llowable Case Temperature ( ) - C Sxx10RSy Sxx10LSy Sxx10VSy Sxx10R Sxx10L CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 FREE IR RTING Sxx10V Maximum llowable mbient Temperature (T ) - C Sxx10RSy Sxx10LSy Sxx10VSy Sxx10R CURRENT WVEFORM: Sinusoidal LOD: Resistive or Inductive CONDUCTION NGLE: 180 FREE IR RTING Sxx10L Sxx10V verage On-State Current [I T(RMS) ] - mps verage On-State Current [I T(VE) ] - mps Note: xx = voltage, y = sensitivity Figure 11: Peak Capacitor Discharge Current Figure 12: Peak Capacitor Discharge Current Derating Peak Discharge Current (I TM ) - mps I TRM Normalized Peak Current Sensitive SCR Standard SCR t W Pulse Current Duration (t W ) - ms Case Temperature ( ) - C Figure 13-1: Typical DC Holding Current with R GK vs. Junction Temperature for S60010xS2 Figure 13-1: Typical DC Holding Current with R GK vs. Junction Temperature for S60010xS3
7 Figure 14-1: Typical DC Holding Current with R GK vs. Junction Temperature for S60010xS2 Figure 14-2: Typical DC Holding Current with R GK vs. Junction Temperature for S60010xS3 Figure 15-1: Typical Static dv/dt with R GK vs. Junction Temperature for S60010xS2 Figure 15-2: Typical Static dv/dt with R GK vs. Junction Temperature for S60010xS3 Figure 16-1: Typical turn off time with R GK vs. Junction Temperature for S60010xS2 Figure 16-2: Typical DC Gate Trigger Current with R GK vs. Junction Temperature for S60010xS3
8 Temperature Thyristors Figure 17: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (I TSM ) mps 0 10 SUPPLY FREQUENCY: 60 Hz Sinusoidal LOD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration -- Full Cycles Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 150 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) seconds Peak Temperature (T P ) /-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C
9 Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations % Matte Tin-plated UL recognized epoxy meeting flammability rating 94V-0 Copper lloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-1040, Cond pplied Peak C 125 C for 8 hours MIL-STD-750, M-1051, cycles; -40 C to +150 C; 15-min dwell-time EI / JEDEC, JESD hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-1031, 8 hours; 150 C 8 hours; -40 C MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 Cond E
10 Product Selector Voltage Part Number 400V 600V 800V 0V Gate Sensitivity Type Package Sxx10RS2 X X 0.2m Sensitive SCR TO-220R Sxx10LS2 X X 0.2m Sensitive SCR TO-220L Sxx10VS2 X X 0.2m Sensitive SCR TO-251 Sxx10DS2 X X 0.2m Sensitive SCR TO-252 Sxx10RS3 X X 0.5m Sensitive SCR TO-220R Sxx10LS3 X X 0.5m Sensitive SCR TO-220L Sxx10VS3 X X 0.5m Sensitive SCR TO-251 Sxx10DS3 X X 0.5m Sensitive SCR TO-252 Sxx10R X X X X 15m Standard SCR TO-220R Sxx10L X X X X 15m Standard SCR TO-220L Sxx10V X X X X 15m Standard SCR TO-251 Sxx10D X X X X 15m Standard SCR TO-252 Sxx10NS2 X X 15m Sensitive SCR TO-263 Sxx10NS3 X X 15m Sensitive SCR TO-263 Sxx10N X X X X 15m Standard SCR TO-263 Note: xx = Voltage/10 Dimensions TO-251 (V/I-Package) V/I-PK Through Hole node E D MESURING POINT H J RE: IN Inches Millimeters Dimension Min Typ Max Min Typ Max B B C D E C P Q R S K F G H I J Cathode node GTE I G F L K L P Q R S
11 Dimensions TO-252 (D-Package) D-PK Surface Mount node B E D MESURING POINT Dimension Inches Millimeters Min Typ Max Min Typ Max B C Cathode node I G P Q GTE F O L N RE: IN 2 M K J H C D E F G H I J K L M N O P Q Dimensions TO-263 (N-Package) D 2 PK Surface Mount Dimension Inches Millimeters Min Max Min Max B C D E F G H J K S V U W
12 Dimensions TO-220B (R-Package) Non-Isolated Mounting Tab Common with Center Lead E B C D NODE MESURING POINT O P RE (REF.) 0.17 IN Dimension Inches Millimeters Min Max Min Max B C D E G F L H R NOTCH IN GTE LED TO ID. NON-ISOLTED TB F G H J CTHODE NODE K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). K L M N O P R Dimensions TO-220B (L-Package) Isolated Mounting Tab E MESURING POINT RE (REF.) 0.17 IN 2 O P Dimension Inches Millimeters Min Max Min Max B C D B C D E F F G L H R G H J CTHODE NODE K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). K L M N O P R
13 Thyristors Packing Options Part Number Marking Weight Packing Mode Base Quantity Sxx10L/RyyTP Sxx10L/Ryy 2.2 g Tube 500 (50 per tube) Sxx10DyyTP Sxx10Dyy 0.3 g Tube 750 (75 per tube) Sxx10DyyRP Sxx10Dyy 0.3 g Embossed Carrier 2500 Sxx10VyyTP Sxx10Vyy 0.4 g Tube 750 (75 per tube) Sxx10L/RTP Sxx10L/R 2.2 g Tube 500 (50 per tube) Sxx10DTP Sxx10D 0.3 g Tube 750 (75 per tube) Sxx10DRP Sxx10D 0.3 g Embossed Carrier 2500 Sxx10VTP Sxx10V 0.4 g Tube 750 (75 per tube) Sxx10NSyTP Sxx10NSy 1.6 g Tube 500 (50 per tube) Sxx10NSyRP Sxx10NSy 1.6 g Embossed Carrie 500 Sxx10NTP Sxx10N 1.6 g Tube 500 (50 per tube) Sxx10NRP Sxx10N 1.6 g Embossed Carrier 500 Note: xx = Voltage/10; yy = Sensitivity TO-252 Embossed Carrier Reel Pack (RP) Specifications Meets all EI Standards (4.0) Gate Dia (1.5) Cathode 0.63 (16.0) (13.3) * XXXXXX XX DC XXXXXX XX DC XXXXXX XX DC XXXXXX * Cover tape (8.0) node (13.0) rbor Hole Dia (330.0) Dimensions are in inches (and millimeters) (16.3) Direction of Feed Part Numbering System COMPONENT DEVICE TYPE S : SCR VOLTGE RTING 40 : 400V 60 : 600V 80 : 800V K0 : 0V CURRENT 10: 10 S L S2 56 LED FORM DIMENSIONS xx : Lead Form Option SENSITIVITY & TYPE Sensitive SCR: S2: 200µ S3: 500µ Standard SCR: (blank): 15m PCKGE TYPE L:TO-220 Isolated R : TO-220 Non-Isolated V:TO-251 (VPK) D:TO-252 (DPK) N: TO-263 (D 2 PK) Part Marking System Sxx10DS3 YMLDD Date Code Marking Y:Year Code M: Month Code L: Location Code DD: Calendar Code TO (V Package) TO (D Package) Sxx10DS3 YMLDD TO-263 (N Package) TO-220 B - (L and R Package) Sxx10R YM Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code
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