EV Series 1.5 Amp Sensitive SCRs. Description. Features. Surge capability > 15Amps Blocking voltage (V DRM / V RRM.

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1 Sx02xS Series RoHS Description New mp sensitive gate SR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SR s junctions are glasspassivated to ensure long term reliability and parametric stability. eatures Main eatures Symbol Value Unit I T(RMS) V DRM /V RRM 400 or 600 V I T 200 µ Surge capability > 15mps Blocking voltage (V DRM / V RRM ) capability up to 600V High dv/dt noise immunity Improved turn-off time (tq) < 35 μsec. Schematic Symbol Sensitive gate for direct microprocessor interface Thru hole and surface mount packages RoHS compliant and Halogen-ree pplications The Sx02xS EV series is specifically designed for solenoid drive often seen in I and similar safety cut-off devices. K bsolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) TO-92 T = 65 SOT-89 T = 80 SOT-223 T L = 95 TO-92 T = 65 I T(V) verage on-state current SOT-89 T = SOT-223 T = 95 I TSM Non repetitive surge peak on-state current (Single cycle, initial = 25 ) TO-92 SOT-89 SOT-223 = 50 Hz 12.5 = 60 Hz 15.0 I 2 t I 2 t Value for fusing t p = 10 ms = 50 Hz 0.78 t p = 8.3 ms = 60 Hz s di/dt ritical rate of rise of on-state current I = 10m TO-92 SOT-89 SOT-223 = /μs I M Peak gate current t p = 10 μs = P (V) verage gate power dissipation = W T stg Storage junction temperature range -40 to 150 Operating junction temperature range -40 to 125

2 Electrical haracteristics ( = 25, unless otherwise specified) Symbol Description Test onditions Sx02xS Sx02xS1 Min Max Min Max Unit I T D Trigger urrent V D = 12V; R L = 60 Ω µ V T D Trigger Voltage V D = 12V; R L = 60 Ω V V RM Peak Reverse Voltage I R = 10μ 5 5 V I H Holding urrent = 1 kω 5 3 m (dv/dt)s ritical Rate-of-Rise of Off-State Voltage = 125 V D = V DRM / V RRM Exponential Waveform = 1 kω V/μs t q Turn-Off Time = 600 V = 1 kω μs t gt Turn-On Time I = 10m PW = 15μsec I T = 3.0 (pk) 3 3 μs Static haracteristics ( = 25, unless otherwise specified) Symbol Description Test onditions Min Value Max Unit V TM Peak On-State Voltage I TM = 3.0 (pk) 1.70 V I DRM Off-State urrent, Peak Repetitive = V D = V DRM = 1 kω = V D = V DRM = 1 kω 5 μ 500 μ Thermal Resistances Symbol Parameter Value Unit R θ(j-) Junction to case () = 1 T (RMS) R θ(j-) Junction to ambient I T = (RMS) Hz resistive load condition, 100% conduction. TO SOT SOT TO SOT SOT /W /W dditional Information Datasheet Resources Samples

3 igure 1: Normalized D Trigger urrent vs. Junction Temperature igure 2: Normalized D Holding urrent vs. Junction Temperature Normalized : Trigger urrent I T j / I 25º Normalized Holding urrent (I / I ) Junction Temperature ( ) Junction Temperature ( ) igure 3: Normalized D Trigger Voltage vs. Junction Temperature igure 4: On-State urrent vs. On-State Voltage (Typical) Normalized : Trigger Voltage (V T j / V 25º) Junction Temperature ( ) Instantaneous On-state urrent (IT) mps Instantaneous On-state Voltage (VT) Volts igure 5: Power Dissipation (Typical) vs. RMS On-State urrent igure 6: Maximum llowable ase Temperature vs. On-State urrent verage Power Dissipation, P D (Watts) 1.0 URRENT WVEORM: Sinusoidal LOD: Resistive or Inductive ONDUTION NLE: 180 o RMS On-state urrent [I T(RMS) ] (mps) Max llowable ase Temperature, T (elsius) TO-92 URRENT WVEORM: Sinusoidal LOD: Resistive or Inductive ONDUTION NLE: 180 o SE TEMPERTURE: Measured as shown on dimensional drawings SOT RMS On-state urrent [I T (RMS) ] (mps) SOT-89

4 igure 7: Typical D Trigger urrent with vs. Junction Temperature for Sx02xS 100 igure 8: Typical D Holding urrent with vs. Junction Temperature for Sx02xS 100 Trigger urrent IT (m) =100Ω =10Ω =470Ω =1KΩ No Holding urrent IH (m) 10 1 =10Ω =100Ω =470Ω =1KΩ No Junction Temperature ( ) -- ( ) Junction Temperature ( ) -- ( ) igure 9: Typical Static dv/dt with vs. Junction Temperature for Sx02xS igure 10: Typical turn off time with vs. Junction Temperature for Sx02xS =10Ω 28 =1KΩ Static dv/dt (V/μs) =220Ω =470Ω =1KΩ Turn off time Tq (µs) =470Ω =100Ω =10Ω Junction Temperature ( ) -- ( ) Junction Temperature () -- ( ) igure 11: Surge Peak On-State urrent vs. Number of ycles Peak Surge (Non-repetitive) On-State urrent (I TSM ) mps Devices Supply requency: 60Hz Sinusoidal Load: Resistive RMS On-State urrent [I T(RMS) ]: Max Rated Value at Specific ase Temperature Notes: 1. control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge urrent Duration ull ycle

5 Temperature Thyristors Soldering Parameters Reflow ondition Pb ree assembly T P t P - Temperature Min (T s(min) ) 150 Ramp-up Pre Heat - Temperature Max (T s(max) ) Time (min to max) (t s ) secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 /second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 /second max t S - Temperature (T L ) (Liquidus) 217 Reflow - Time (min to max) (t s ) seconds Peak Temperature (T P ) /-5 25 time to peak temperature Time Time within 5 of actual peak Temperature (t p ) seconds Ramp-down Rate 5 /second max Time 25 to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 Physical Specifications Environmental Specifications Terminal inish Body Material Lead Material Design onsiderations 100% Matte Tin-plated. UL recognized epoxy meeting flammability rating V-0. opper lloy areful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. ood design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. orrect mounting, soldering, and forming of the leads also help protect against component damage. Test Blocking Temperature ycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and onditions MIL-STD-750, M-1040, ond pplied Peak 125 for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40 to +150 ; 15-min dwell-time EI / JEDE, JESD hours; 160V - D: 85 ; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; hours; -40 MIL-STD-750 Method 2031 NSI/J-STD-002, category 3, Test MIL-STD-750, M-2036 ond E

6 Dimensions TO-92 (E Package) T MESURIN POINT Dimensions Inches Millimeters Min Max Min Max B B SETIN PLNE TE D E THODE H I D NODE H I J E J Dimensions SOT-223 Dimensions Inches Millimeters Min Typ Max Min Typ Max (0.059 ) (0.059 ) Pad Layout for SOT (0.047 ) (3x) 3.3 (0.130 ) 2.3 (0.091 ) 4.6 (0.181 ) Dimensions in Millimeters (Inches) Recommended Soldering ootprint for SOT (0.252 ) B D E H I J K 10 MX

7 J J Tc Measuring Point B D E Dimensions SOT-89 J B J Tc Measuring Point D B Tc Measuring Point E D H B D E H E H Dimension Inches Millimeters c Min Typ Max Min Typ g Max Pad Layout for SOT-89 H (2.21).087 (1.12).044 (3.91).154 (1.19) c.047 (0.91) g.036 (1.63) (1.63) Dimensions in Millimeters (Inches) f d a e g f c d a B c g f 1.60 D E e 0.89 a f d b e H I b J d a b e b Product Selector Voltage Part Number 400V 600V Sensitivity Package S402ES X µ TO-92 S602ES -- X 200µ TO-92 S402TS X µ SOT-223 S602TS -- X 200µ SOT-223 Sx02ES1 X X 100µ TO-92 Sx02BS1 X X 100µ SOT-89 Sx02BS X X 200µ SOT-89 Sx02TS1 X X 100µ SOT-223 Note: x = voltage/10

8 Packing Options Part Number Marking Weight Packing Mode Base Quantity Sx02ES Sx02ES g Bulk 2500 Sx02ESP Sx02ES g mmo Pack 2000 Sx02ESRP Sx02ES g Tape & Reel 2000 Sx02TSRP Sx02TS g Tape & Reel 1000 Sx02ES1 Sx02ES g Bulk 2500 Sx02ES1P Sx02ES g mmo Pack 2000 Sx02ES1RP Sx02ES g Tape & Reel 2000 Sx02TS1RP Sx02TS g Tape & Reel 1000 Sx02BSRP Sx02BS g Tape & Reel 1000 Sx02BS1RP Sx02BS g Tape & Reel 1000 TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EI-468- Standards 1.6 (41.0) (6.0) 0.02 () (2.5) MX 1.26 (32.0) (18.0) (9.0) (12.7) 0.1 (2.54) 14.17(360.0) 0.2 (5.08) DI (4.0) lat up 1.97 (50.0) Direction of eed Dimensions are in inches (and millimeters).

9 TO-92 (3-lead) mmo Pack (P) Radial Leaded Specifications Meets all EI-468- Standards 1.62 (41.2) (18.0) (6.0) (9.0) 0.02 () (2.5) MX 1.27 (32.2) (12.7) 0.1 (2.54) 0.2 (5.08) DI (4.0) Directionof eed lat down 25 Devices per fold 1.85 (47.0) 12.2 (310.0) 1.85 (47.0) Dimensions are in inches (and millimeters) (338.0) SOT-223 Reel Pack (RP) Specifications mm 4 mm 8 mm 2 mm 1.75 mm 12 mm 5.5 mm K TE 180 mm 13 mm bor Hole Diameter 13.4 mm

10 Part Numbering System Part Marking System Sx 02 x xx xx SR SERIES VOLTE 4: 400V 6: 600V URRENT 02: PKIN TYPE Blank: Bulk RP: Reel Pack (TO-92) : Embossed arrier Pack (SOT-223) P: mmo Pack (TO-92) SENSITIVITY S: 200µ Sensitive SR S1: 100µ Sensitive SR PKE TYPE E: TO-92 T: SOT-223 B: SOT-89 SOT89 TO-92 SOT223 Line1 = Littelfuse Part Number Line2 = continuation Littelfuse Part Number Y = Last Digit of alendar Year M = Letter Month ode (-L for Jan-Dec) L = Location ode DD = alendar Date Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at