SDP Biased Series - SOT23-6
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- Evelyn Dalton
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1 SDP Biased Series - SOT23-6 RoHS Description Features & Benefits Agency Approvals Agency Agency File Number Pinout Designation & Schematic Symbol (30MHz Applicable Global Standards P =8/20μs 3 4 Absolute Maximum Ratings between pin1 and pin 3, Ta= 25ºC (Unless otherwise noted Part Number Marking ºC Maximum Junction Temperature Storage Temperature Range I pp 8/20μs ºC ºC A Max Electrical Characteristics between pin 1 and pin 3, Ta = 25 C Part Number Marking V DRM =100nA I DRM =19V V I H I S Co@f=1MHz,2V Delta Co@ Line Bias = 1 V to 19 V V min pa typ V max ma typ ma min pf max pf max
2 V-I: Characteristics Typical capacitance against line voltage (without external bias 2.0 Capacitance (pf Voltage (Volt Surge Ratings I PP Series 1.2/50μs 1 / 8/20μs 2 A min 30 PP Thermal Information Parameter S ra e Te era re a e Ma i J i Te era re Ma i ead Te era re (S deri 10s Rating Units 496 2
3 Normalized V S Change vs. Junction Temperature Normalized Holding Current vs. Case Temperature Percent of VS Change % Junction Temperature (TJ C Normalized I H Case Temperature ºC Soldering Parameters Reflow Condition - Temperature Min (T s(min Pre Heat - Temperature Max (T s(max - Time (Min to Max (t s Average ramp up rate (Liquidus Temp (T L to peak T S(max to T L - Ramp-up Rate Reflow - Temperature (T L (Liquidus - Temperature (t L Peak Temp (T P Time within 5 C of actual Peak Temp (t p Ramp-down Rate Time 25 C to Peak Temp (T P Do not exceed 497 3
4 Physical Specifications Environmental Specifications Lead Plating Lead Material Lead Coplanarity Subsitute Material Body Material Flammability Temp Cycling Bias Humidity Pressure Cooker High Temp Storage HTRB Thermal Shock C-SAM Wet Humidity (Tin only Dimensions - SOT23-6 P Recommended Solder Pad Layout O R M Dimensions Inches Millimeters Min Max Min Max D e e M O P
5 Part Numbering Part Marking SDP T023 G 6 RP Type SIDACtor DSL Protector Nominal Working voltage: Reel Pack Number of pins Surge Ipp rating 6 5 P24 4 Part Marking Code Construction variable: 0=single chip Package Type Packing Options Package Type Description Quantity SOT Embossed Carrier Tape & Reel Specification - SOT23-6 ACCESS HOLE 14.4mm 1.5mm DIA. HOLE 4.0mm 2.0mm 1.75mm 13mm 8mm C L 4.0mm 180mm 60mm SOT-23 (8mm POCKET PITCH 8.4mm USER DIRECTION OF FEED PIN 1 GENERAL INFORMATION PIECES PER REEL. 2. ORDER IN MULTIPLES OF FULL REELS ONLY. 3. MEETS EIA-481 REVISION "A" SPECIFICATIONS. COVER TAPE 499 5
6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Littelfuse: SDP0240T023G6RP
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V V I H. T Part Number Marking
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V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low
Spezifikation für Freigabe / specification for release
Artikelnummer / part number : 82541300 Datum / Date : 31.07.06 description : HIGH SURGE 1206 SMD VARISTOR Lead Free SMD size: 1206 ROHS Compliant A Mechanische Abmessungen / dimensions : SIZE SIZE W L
Produkt Information. Ultra Low Ohm (Metal Strip) Chip Resistor (LR Series) Scope. Features. Applications. Construction
Scope Ultra Low Ohm (Metal Strip) Chip Resistor (LR Series) -This specification applies to all sizes of rectangular-type fixed chip resistors with alloy as mater. Features -High power rating up to 3 Watts
T C = 25 C, t P = 10 ms 2
Silicon Carbide Power Schottky Diode Features Industry s leading low leakage currents 175 C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of V F Fast switching
WP132XSEC/J4-AMT T-1 (3mm) Solid State Lamp
T-1 (3mm) Solid State Lamp DESCRIPTIONS The Orange source color devices are made with AlGaInP Light Emitting Diode Electrostatic discharge and power surge could damage the LEDs It is recommended to use
SDT800-STR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information
Description The consists of two phototransistors, each optically coupled to a light emitting diode for DC input operation. Optical coupling between the input IR LED and output phototransistor allows for