Low Power Use Non-Insulated Type,Glass Passivation Type CR08AS VRRM V VRSM V VR(DC) V VDRM V

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1 Low Power Use Non-Insulated Type,Glass Passivation Type CR8S Features 1..1 IT(V) :.8 VDRM :4V/6V IGT : GTE.NODE.CTHODE bsolute Maximum Ratings Ta = Parameter Symbol CR8S-8 CR8S-1 Repetitive peak reverse voltage VRRM 4 6 V Non-repetitive peak reverse voltage VRSM V DC reverse voltage VR(DC) 48 V Repetitive peak off-state voltage *1 VDRM 4 6 V DC off-state voltage *1 VD(DC) 48 V RMS on-state current IT(RMS) verage on-state current IT(V).8 Surge on-state current ITSM 1 I t for fusing I t.4 Peak gate power dissipation PGM. W verage gate power dissipation PG(V).1 W Peak gate forward voltage VFGM 6 V Peak gate reverse voltage VRGM 6 V Peak gate forward current IFGM. Junction temperature Storage temperature *1 With Gate-to-cathode resistance RGK=1k Tj Tstg -4 to +1-4 to +1 Unit s 1

2 CR8S Electrical Characteristics Ta = Parameter Symbol Testconditi ons Repetitive peak reverse current IRRM Tj=1, VRRM applied,rgk=1k. m Repetitive peak off-state current IDRM Tj=1, VDRM applied, RGK=1k. m On-state voltage VTM Ta=, ITM=., instantaneous value 1. V Gate trigger voltage VGT Ta=, VD=6V, IT=.1*1.8 V Gate non-trigger voltage VGD Tj=1, VD=1/VDRM, RGK=1k. V Gate trigger current IGT Tj=, VD=6V, IT=.1 *1 1 1 * Holding current IH Tj=, VD=1V, RGK=1k 1. m Thermal resistance Rth (j-a) Junction to ambient 6 Min Typ. Max Unit W *1 IGT, VGT measurement circuit. * If special values of IGT are required, choose at least two items from those listed in the table below. Item B C IGT ( ) 1 to to 4 to 1 Marking NO. CRO8S-8 CRO8S-1 Marking D F ON-STTE CURRENT () MXIMUM ON-STTE CHRCTERISTICS Ta = C SURGE ON-STTE CURRENT () RTED SURGE ON-STTE CURRENT ON-STTE VOLTGE (V) CONDUCTION TIME (CYCLES T 6Hz)

3 CR8S GTE VOLTGE (V) GTE CHRCTERISTICS VFGM = 6V PGM =.W PG(V) =.1W 1 VGT =.8V IGT = 1µ (Tj = C) 1 1 VGD =.V IFGM = (%) GTE TRIGGER CURRENT (Tj = t C) GTE TRIGGER CURRENT (Tj = C) GTE TRIGGER CURRENT VS GTE CURRENT (m) GTE TRIGGER VOLTGE (V) GTE TRIGGER VOLTGE VS. DISTRIBUTION TRNSIENT THERML IMPEDNCE ( C/W) MXIMUM TRNSIENT THERML IMPEDNCE CHRCTERISTICS (JUNCTION TO MBIENT) t. LUMINUM BORD TIME (s) VERGE POWER DISSIPTION (W) MXIMUM VERGE POWER DISSIPTION (SINGLE-PHSE HLF WVE) = LODS MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE VS. VERGE ON-STTE CURRENT (SINGLE-PHSE HLF WVE) t. LUMINUM BORD = LODS NTURL

4 CR8S MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE VS. VERGE ON-STTE CURRENT (SINGLE-PHSE HLF WVE) LODS 6 NTURL = 18 Rth(j a) = C/W 9 C/W 6 C/W VERGE POWER DISSIPTION (W) MXIMUM VERGE POWER DISSIPTION (SINGLE-PHSE FULL WVE) = RESISTIVE LODS MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE VS. VERGE ON-STTE CURRENT (SINGLE-PHSE FULL WVE) t. LUMINUM BORD RESISTIVE LODS NTURL 6 1 = 9 18 VERGE POWER DISSIPTION (W) MXIMUM VERGE POWER DISSIPTION (RECTNGULR WVE) 9 18 = DC LODS MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE VS. VERGE ON-STTE CURRENT (RECTNGULR WVE) t. LUMINUM BORD = LODS NTURL DC 1 (%) BREKOVER VOLTGE (Tj = t C) BREKOVER VOLTGE (Tj = C) BREKOVER VOLTGE VS. RGK = 1kΩ

5 CR8S 1 (%) BREKOVER VOLTGE (RGK = rkω) BREKOVER VOLTGE (RGK = 1kΩ) BREKOVER VOLTGE VS. GTE TO CTHODE RESISTNCE Tj = 1 C (%) BREKOVER VOLTGE (dv/dt = vv/µs) BREKOVER VOLTGE (dv/dt = 1V/µs) BREKOVER VOLTGE VS. RTE OF RISE OF OFF-STTE VOLTGE 16 Tj = 1 C 14 RGK = 1kΩ GTE TO CTHODE RESISTNCE (kω) RTE OF RISE OF OFF-STTE VOLTGE (V/µs) HOLDING CURRENT (m) HOLDING CURRENT VS. DISTRIBUTION IGT ( C) = µ RGK = 1kΩ (%) HOLDING CURRENT (RGK = rkω) HOLDING CURRENT (RGK = 1kΩ) 4 1 HOLDING CURRENT VS. GTE TO CTHODE RESISTNCE IGT ( C) IH (1kΩ) # 1 µ.9m # 1 Tj = C GTE TO CTHODE RESISTNCE (kω) HOLDING CURRENT (m) HOLDING CURRENT VS. GTE TRIGGER CURRENT Tj = C TURN-ON TIME (µs) TURN-ON TIME VS. GTE CURRENT VD = 1V RL = 4Ω RGK = 1kΩ Ta = C GTE TRIGGER CURRENT (µ) GTE CURRENT (m)

6 CR8S TURN-OFF TIME (µs) TURN-OFF TIME VS. VD = V, VR = V IT =, RGK = 1kΩ DISTRIBUTION (%) REPETITIVE PEK REVERSE VOLTGE (Tj = t C) REPETITIVE PEK REVERSE VOLTGE (Tj = C) REPETITIVE PEK REVERSE VOLTGE VS (%) GTE TRIGGER CURRENT (tw) GTE TRIGGER CURRENT (DC) GTE TRIGGER CURRENT VS. GTE CURRENT PULSE WIDTH Tj = C IGT (DC) # 1 1µ # 1 # 6µ # THERML IMPEDNCE ( C/W) THERML IMPEDNCE VS. BORD DIMENSIONS WITHOUT EPOXY PLTE 1 1 EPOXY PLTE WITH COPPER FOIL t. LUMINUM BORD GTE CURRENT PULSE WIDTH (µs) BORD DIMENSIONS (mm) REGULR SQURE ONE SIDE 6

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