Symbol Parameter Test condition Value Unit V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20 V

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1 FEATURES 1200V,100A,V CE(sat) GE =15V IGBT CHIP: Trench + Field Stop technology Fast switching and short tail current Low switching losses RoHS Compliant APPLICATIONS Electric welding machine General converter UPS MAXIMUM RATINGS (at T j = 25 o C, unless otherwise specified) Symbol Parameter Test condition Value Unit V CES CollectorEmitter Voltage 1200 V V GES GateEmitter Voltage ±20 V I C Continuous Collector Current T C= A Continuous Collector Current T C= A I CM Pulse Collector Current t p=1ms 200 A P D Power Dissipation Per IGBT T C=25,T j= W t scwt Short Circuit Withstand Time V GE 15V, V CC=600V 10 μs V RRM Diode Repetitive Peak Reverse Voltage 1200 V I F Diode Continuous DC Forward Current T C= A I FRM Diode Maximum Forward Current t p=1ms 200 A T j Operating Junction Temperature 40 to +150 THERMAL CHARACTERISTICS Symbol Parameter Typ. Max. Unit RΘJC(IGBT) Thermal Resistance, JunctiontoCase 0.31 /W RΘJC(DIODE) Thermal Resistance, JunctiontoCase 0.27 /W RΘCS Thermal Resistance, CasetoSink 0.1 /W 1 / 6 Website: www. Leadingenergytec.com

2 MODULES Symbol Parameter Test condition Value Unit T STG Storage Temperature Range 40 to +125 V ISOL Isolation test Voltage RMS, f=50hz, t=1min 2500 V M Mounting Torque for Module Mounting Screw M5 2.5~5.0 N m M Mounting Torque for Electrodes Screw M6 3.0~5.0 N m W Weight 155 g ELECTRICAL CHARACTERISTICS OF IGBT (at T j = 25 o C, unless otherwise specified) Symbol Parameter Test conditio Min. Typ. Max. Units Characterization of static parameters BV CES CollectorEmitter Breakdown Voltage V GE =0, I C =1mA 1200 V V GE(th) Gate Threshold Voltage I C =1mA,V CE =V GE V V CE(sat) V GE =15V, I C =100A, T j= V CollectorEmitter Saturation Voltage V GE =15V, I C =100A,T j= V I CES Collector Cutoff Current V CE= 1200V, V GE= 0 1 ma I GES GateEmitter Leakage Current V CE= 0V, V GE= 20V 100 na Dynamic Characteristics C ies Input Capacitance V CE=25V,V GE=0V,f=1MHZ 10.0 nf C oes Output Capacitance 0.28 nf Q G Gate Charge V CE=600V,I C=100A,VGE=15V 0.42 μc t d(on) Turnon Delay Time 80 t r t d(off) t f E on E off Rise Time Turnoff Delay Time Fall Time Turnon Switching Loss Turnoff Switching Loss V CC=600V V GE=±15V I C=100A R G=15Ω T j= E total Total Switching Loss 22 t d(on) Turnon Delay Time 75 t r t d(off) t f E on E off Rise Time Turnoff Delay Time Fall Time Turnon Switching Loss Turnoff Switching Loss V CC=600V, V GE=±15V, I C=100A R G=15Ω T j = 125 o C E total Total Switching Loss / 6 Website: www. Leadingenergytec.com

3 ELECTRICAL CHARACTERISTICS OF DIODE (at T j = 25 o C unless otherwise specified) Symbol Parameter Test conditio Min Typ Max Unit V F I F=100A, V GE=0V, T j = 25 o C 2.00 V Diode Forward Voltage I F=100A, V GE=0V, T j = 125 o C 1.65 V I rr Diode Peak Reverse Recovery Current V R=600V, I F=100A, 35 A Q rr Diode Reverse Recovery Charge V GE=15V, di/dt=800 A/us 6.4 uc E rec Diode Reverse Recovery Charge T j = 25 o C 2.1 I rr Diode Peak Reverse Recovery Current V R=600V, I F=100A, 65 A Q rr Diode Reverse Recovery Energy V GE=15V, di/dt=800 A/us 17.7 uc E rec Diode Reverse Recovery Energy T j =125 o C / 6 Website: www. Leadingenergytec.com

4 Fig.1 output characteristic IGBT Inverter (typical) Fig.2 output characteristic IGBT Inverter (typical) Fig.3 trafer characteristic IGBT Inverter (typical) Fig.4 forward characteristic of Diode, Inverter (typical) Fig.5 switching losses IGBT Inverter (typical) Fig.6 switching Losses vs. Gate Resistance (typical) 4 / 6 Website: www. Leadingenergytec.com

5 Fig.7 Traient thermal impedance (IGBT) Fig.8 Traient thermal impedance (Diode) Fig.9 Reverse Bias Safe Operation Area (RBSOA) 5 / 6 Website: www. Leadingenergytec.com

6 CIRCUIT_DIAGRAM_HEADLINE PACKAGE OUTLINES: ( Unit:mm ) DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE 6 / 6 Website: www. Leadingenergytec.com