Values / / 360 ± (125) /125/ / / ,5 4,5 5, ,3 1,9 18 4,3 3,6

Transcription

1 bsolute Maximum Ratings Symbol Conditio ) CES CGR M GES P tot T j, (T stg ) T cop isol humidity climate R GE = kω T HS = 5/7 C T HS = 5/7 C; t p = ms per IGBT, T HS = 5 C max. case operating temperature C, min. IEC-EN IEC 68 T. Inverse Diode I F = T HS = 5/7 C I FM = M T HS = 5/7 C; t p = ms I FSM t p = ms; sin.; T j = C I t t p = ms; T j = C alues 35 / 7 / 36 ± (5) 5 /5/56 3 / 6 / 36 Units W C C s SKiM IGBT Modules Preliminary Data Characteristics Symbol Conditio ) min. typ. max. Units (BR)CES GE(th) ES CES,5 5,5 6,5 I GES CEsat ) C ies C oes C res L CE R CC + EE t d(on) t d(off) Inverse Diode 8) F = EC F = EC TO r T I RRM Q rr GE =, = m GE = CE, = m GE = CE = CES GE =, CE = = GE = 5 ; T j = 5 C GE = CE = 5 f = MHz resistance, terminal-chip; T HS = 5 C CC = 6 GE = +5 / 5 3) =, ind. load R Gon = R Goff = 5 Ω I F = GE = ; I F = T j = 5 (5) C I F = ; T j = 5 (5) C ) I F = ; T j = 5 (5) C ) Thermal Characteristics 5) R thjh R thjhd R thjc R thjcd per IGBT per diode per IGBT per diode Temperature Seor R TS T = 5 C / C tolerance T = 5 C / C 5,9,3 3,6,5 5 7,3 (,),8 (,, 5 TBD TBD, /,67 3, /,,3,6,,85,7,5 m n nh mω mω µc kω % Features GD N channel, homogeneous planar IGBT Silicon structure with n+ buffer layer in SPT (soft punch through) technology Low inductance case Fast & soft inverse CL diodes 8) Isolated by DCB (Direct Copper Bonded) ceramic plate Pressure contact technology for thermal contacts Spring contact system to attach driver PCB to the control terminals Integrated temperature seor Typical pplicatio Switched mode power supplies Three phase inverters for C motor speed control Switching (noor linear use) ) T HS = 5 C, unless otherwise specified ) TBD 3) Use GEoff = ) Measured at chip level 5) See mounting itructio Corresponding value. This value cannot be measured. It is only given for comparison. 8) CL = Controlled xial Lifetime Technology by SEMIKRON 7 B 35

2 6 SKiM GD8D.xls - CE = 6 GE = + 5 R G = 5 Ω 6 SKiM GD8D.xls - CE = 6 GE = + 5 = 3 3 E 3 E R G Ω )LJTurn-on /-off energy = f ( ) Fig. Turn-on /-off energy = f (R G ) SKiM GD8D.xls - 3 t p =µs µs pulse T HS = 5 C T j C,5 SKiM GD8D.xls - GE = ± 5 R Goff = 5 Ω CC = = ms,5 ms,5 puls /, CE Fig. 3 Maximum safe operating area (SO) = f ( CE ) 6 8 CE Fig. Turn-off safe operating area (RBSO) 8 6 SKiM GD8D.xls - 5 GE = ± 5 t sc = µs L < 5 nh CC = 9 N = SKiM GD8D.xls - 6 T j = C 9 *( 9 allowed numbers of short circuits: < time between short circuits: >s SC / 6 8 CE Ths C Fig. 5 Safe operating area at short circuit = f ( CE ) Fig. 6 Rated current vs. temperature = f (T HS ) B 36 7 by SEMIKRON

3 SKiM GD8D.xls - 7 SKiM GD8D.xls CE 3 CE )LJTyp. output characteristic, t p = 8 µs; 5 C Fig. 8 Typ. output characteristic, t p = 8 µs; 5 C 3 SKiM GD8D.xls - 3 Fig. 9 6DWXUDWLRQ KDUD WHULWL,*%7 &DO XODWLRQHOHPHQWDQGHTXDWLRQ 6 8 G Fig. 7\SWUDQIHU KDUD WHULWL W S 9 &( 9 6 SKiM GD8D.xls puls = SKiM GD8D.xls - C ies GE = f = MHz 8 C oes 6 C C res GE Q Gate nc Fig. Typ. gate charge characteristic CE Fig. Typ. capacitances vs. CE by SEMIKRON 7 B 37

4 SKiM GD8D.xls - 3 t doff t don CE = 6 GE = + 5 R Gon = R Goff = 5 Ω ind. load SKiM GD8D.xls - t doff CE = 6 GE = + 5 = ind. load t don t t R G Ω Fig. 3 Typ. switch times vs. Fig. Typ. switch times vs. gate resistor R G SKiM GD8D.xls T j =5 C, typ. T j =5 C, typ. I F 3 F Fig. 5 Typ. CL diode forward characteristic )LJ'LRGHWXUQRIIHQHUJ\GLLSDWLRQSHUSXOH SKiM GD8D.xls - 7 SKiM GD8D.xls - K/W K/W,,,, Z thjhs single pulse D=,,,,5,,,, Z thjhs single pulse D=,5,,,5,,,,, t p,,, s )LJ7UDQLHQWWKHUPDOLPSHGDQ HRI,*%7 = WK-+6 IW S ' W S W W S ÂI,,,,,, t p s )LJ7UDQLHQWWKHUPDOLPSHGDQ HRI LQYHUH&$/GLRGH= WK-+6 IW S ' W S W W S ÂI B 38 7 by SEMIKRON

5 SKiM Dimeio in mm Case outline and circuit diagram Mechanical Data Symbol Conditio alues Units min. typ. max. M to heatsink, SI Units (M5) 3 Nm M to heatsink, US Units for terminals, SI Units (M 6 5 lb.in. Nm a w for terminals, US Units 35 5x9,8 3 lb.in. m/s g This is an electrostatic discharge seitive device (ESDS). Please observe the international standard IEC 77-, Chapter IX. 7KLWH KQL DOLQIRUPDWLRQSH LILHHPL RQGX WRUGHYL HEXWSURPLHQR KDUD WHULWL RZDUUDQW\RUJXDUDQWHHH[SUHHGRU LPSOLHGLPDGHUHJDUGLQJGHOLYHU\SHUIRUPDQ HRUXLWDELOLW\ by SEMIKRON 7 B 39