IGBT V CES T j =25 C 1200 V I C T c =25 C 114 A T j = 175 C T c =80 C 87 A I Cnom 75 A I CRM I CRM = 3xI Cnom 225 A V GES

Transcription

1 SEMITRANS 2 Features V-IT = 6. Generation Trench V-IT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt Typical Applications* AC inverter drives UPS Electronic welders Remarks Case temperature limited to T c = 125 C max, recomm. T op = C, product rel. results valid for T j = 150 Absolute Maximum Ratings Symbol Conditions Values Unit IT V CES T j =25 C 1200 V I C T c =25 C 114 A T j = 175 C T c =80 C 87 A I Cnom 75 A I CRM I CRM = 3xI Cnom 225 A V GES V t psc V CC = 720 V V GE 20 V T j =125 C 10 µs V CES 1200 V T j C Inverse diode I F T c =25 C 97 A T j = 175 C T c =80 C 73 A I Fnom 75 A I FRM I FRM = 3xI Fnom 225 A I FSM t p = 10 ms, sin 180, T j =25 C 430 A T j C Module I t(rms) T terminal =80 C 200 A T stg C V isol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IT V CE(sat) I C =75A T j =25 C V V GE =15V chiplevel T j =150 C V V CE0 T j =25 C V T j =150 C V r CE T j =25 C m V GE =15V T j =150 C m V GE(th) V GE =V CE, I C = 3 ma V I CES V GE =0V T j =25 C ma V CE = 1200 V T j =150 C ma C ies f=1mhz 4.5 nf V CE =25V C oes f=1mhz 0.44 nf V GE =0V C res f=1mhz nf Q G V GE = - 8 V V 830 nc R Gint 10.0 t d(on) V CC = 600 V T j =150 C 258 ns t I C =75A r T j =150 C 32 ns V GE =±15V E on T R G on =1.3 j =150 C 6.7 mj t d(off) R G off =1.3 T j =150 C 388 ns t f di/dt on = 3900 A/µs T j =150 C 62 ns E off di/dt off =1020A/µs du/dt off = 9000 V/ µs T j =150 C 7.1 mj R th(j-c) per IT 0.38 K/W by SEMIKRON Rev

2 SEMITRANS 2 Features V-IT = 6. Generation Trench V-IT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt Typical Applications* AC inverter drives UPS Electronic welders Remarks Case temperature limited to T c = 125 C max, recomm. T op = C, product rel. results valid for T j = 150 Characteristics Symbol Conditions min. typ. max. Unit Inverse diode V F = V EC I F =75A T j =25 C V V GE =0V chip T j =150 C V V F0 T j =25 C V T j =150 C V r F T j =25 C m T j =150 C m I RRM I F =75A T j =150 C 85 A Q rr di/dt off =2950A/µs V GE =±15V T j =150 C 10 µc E rr V CC = 600 V T j =150 C 4.2 mj R th(j-c) per diode 0.58 K/W Module L CE 30 nh R CC'+EE' T C =25 C 0.65 m terminal-chip T C =125 C 1 m R th(c-s) per module K/W M s to heat sink M6 3 5 Nm M t to terminals M Nm Nm w 160 g 2 Rev by SEMIKRON

3 Fig. 1: Typ. output characteristic, inclusive R CC'+ EE' Fig. 2: Rated current vs. temperature I C = f (T C ) Fig. 3: Typ. turn-on /-off energy = f (I C ) Fig. 4: Typ. turn-on /-off energy = f (R G ) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic by SEMIKRON Rev

4 Fig. 7: Typ. switching times vs. I C Fig. 8: Typ. switching times vs. gate resistor R G Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R CC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev by SEMIKRON

5 SEMITRANS 2 This is an electrostatic discharge sensitive device (ESDS), international standard IEC , Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. by SEMIKRON Rev