SKiiP 2403 GB172-4DL V3
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- Albert Cox
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1 SKiiP 3 2-pack-integrated intelligent Power System SKiiP 2403 GB172-4DL V3 Features SKiiP technology inside Trench IGBTs CAL diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink UL recognized File no. E63532 Typical Applications* Renewable energies Traction Elevators Industrial drives Footnotes 1) With assembly of suitable MKP capacitor per terminal Absolute Maximum Ratings T s = 25 C unless otherwise specified Symbol Conditions Values Unit System V CC 1) Operating DC link voltage 1200 V V isol DC, t = 1 s, main terminals to heat sink 5600 V I t(rms) per AC terminal, T terminal <115 C 400 A I FSM T j = 150 C, t p = 10 ms, sin A I²t T j = 150 C, t p =10ms, diode 911 ka²s f out fundamental output frequency 1 khz T stg storage temperature C IGBT V CES T j =25 C 1700 V I C T j = 150 C T s =25 C 2282 A T s =70 C 1760 A I Cnom 2400 A T j junction temperature C Diode V RRM T j =25 C 1700 V I F T j = 150 C T s =25 C 1921 A T s =70 C 1467 A I Fnom 1800 A T j junction temperature C Driver V s power supply V V ih input signal voltage (high) V V isolpd QPD <= 10pC, PRIM to POWER 1500 V dv/dt secondary to primary side 75 kv/µs f sw switching frequency 7 khz Characteristics T s = 25 C unless otherwise specified Symbol Conditions min. typ. max. Unit IGBT V CE(sat) I C = 1200 A T j =25 C V T j =125 C 2.2 V V CE0 T j =25 C V r CE E on + E off I C = 1200 A T j = 125 C T j =125 C V T j =25 C mω T j =125 C mω V CC = 900 V 780 mj V CC = 1200 V 1150 mj R th(j-s) per IGBT switch K/W R th(j-r) per IGBT switch K/W S43 by SEMIKRON Rev
2 SKiiP 3 2-pack-integrated intelligent Power System SKiiP 2403 GB172-4DL V3 Features SKiiP technology inside Trench IGBTs CAL diode technology Integrated current sensor Integrated temperature sensor Integrated heat sink UL recognized File no. E63532 Typical Applications* Renewable energies Traction Elevators Industrial drives Footnotes 1) With assembly of suitable MKP capacitor per terminal Characteristics T s = 25 C unless otherwise specified Symbol Conditions min. typ. max. Unit Diode V F = V EC I F = 1200 A T j =25 C V T j =125 C 1.80 V V F0 T j =25 C V r F E rr I F = 1200 A T j = 125 C T j =125 C V T j =25 C mω T j =125 C mω V R =900V 144 mj V R = 1200 V 171 mj R th(j-s) per diode switch K/W R th(j-r) per diode switch K/W Driver V s supply voltage non stabilized V I S0 bias s =24V, f sw = 0, I AC = ma I s k 1 =55mA/kHz, k 2 = ma/a 2 = k 1 * f sw + k 2 * I AC 2 ma V IT+ input threshold voltage (HIGH) 12.3 V V IT- input threshold voltage (LOW) 4.6 V R IN input resistance 10 kω C IN input capacitance 1 nf t preset error memory reset time ms t TD top / bottom switch interlock time 3 µs t jitter jitter clock time 125 ns t SIS short pulse suppression time µs I TRIPSC over current trip level A PEAK T trip over temperature trip level C V DCtrip over voltage trip level, not impl. V input-output turn-on 1.4 µs propagation time t d(on)io t d(off)io System R th(r-a) V CC = 1200 V I C = 1200 A T j =25 C input-output turn-off propagation time flow rate=390m 3 /h, T a =25 C, 500m above sea level 1.4 µs K/W R CC'+EE' terminals to chip, T s =25 C 0.13 mω L CE commutation inductance 3 nh C CHC per phase, AC-side 4 nf I CES + I RD V GE =0V, V CE = 1700 V, T j =25 C 4.8 ma M dc DC terminals, SI Units 6 8 Nm M ac AC terminals, SI Units Nm w SKiiP System w/o heat sink 3.1 kg w h heat sink 8 kg S43 2 Rev by SEMIKRON
3 by SEMIKRON Rev
4 Fig. 1: Typical IGBT output characteristic Fig. 2: Typical diode output characteristics Fig. 3: Typical energy losses E = f(i c, V cc ) Fig. 4: Typical energy losses E = f(i c, V cc ) Fig. 5: Pressure drop Δp versus flow rate V Fig. 6: Transient thermal impedance Zth(j-r) 4 Rev by SEMIKRON
5 Fig. 7: Transient thermal impedance Zth(r-a) Fig. 8: Coefficients of thermal impedances Fig. 9: Thermal resistance Rth(r-a) versus flow rate V by SEMIKRON Rev
6 Heat sink 6 Rev by SEMIKRON
7 System This is an electrostatic discharge sensitive device (ESDS), international standard IEC , Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. by SEMIKRON Rev
I C T s =25 C 389 A V CC = 800 V. T s =70 C 285 A I C T s =25 C 440 A T s =70 C 345 A V CC = 360 V. V GE 15 V T j =150 C 10 µs
IGBT 1 V CES T j =25 C 1200 V I C T s =25 C 473 A T j = 150 C T s =70 C 358 A I C T s =25 C 529 A T j = 175 C T s =70 C 425 A I Cnom 600 A I CRM I CRM = 3 x I Cnom 1800 A V GES -20... 20 V t psc V CC =
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More informationT s =25 C 18 A T s =70 C 18 A I Cnom 15 A I CRM I CRM = 3 x I Cnom 45 A V GES V V CC = 800 V. T s =25 C 23 A I C =15A
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