T s =25 C 43 A T s =70 C 33 A T s =25 C 48 A T s =70 C 39 A I Cnom 35 A I CRM I CRM = 3 x I Cnom 105 A V GES V. T j = 175 C V CC = 800 V
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1 MiniSKiiP 2 Features Trench 4 IGBT s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connectio UL recognised file no. E63532 Typical Applicatio* Inverter up to 22 kva Typical motor power 11 kw Remarks V CEsat, V F = chip level value Case temp. limited to T C = 125 C max. (for baseplateless modules T C = T S ) product rel. results valid for T j 150 (recomm. T op = C) Absolute Maximum Ratings Symbol Conditio Values Unit Inverter - IGBT V CES T j =25 C 1200 V T s =25 C 43 A T s =70 C 33 A T s =25 C 48 A T s =70 C 39 A nom 35 A RM RM = 3 x nom 105 A V GES V t psc V CC = 800 V V GE 15 V 10 µs V CES 1200 V Chopper - IGBT V CES T j =25 C 1200 V T s =25 C 43 A T s =70 C 33 A T s =25 C 48 A T s =70 C 39 A nom 35 A RM RM = 3 x nom 105 A V GES V t psc V CC = 800 V V GE 15 V 10 µs V CES 1200 V Inverse - Diode V RRM T j =25 C 1200 V T s =25 C 39 A T s =70 C 30 A T s =25 C 44 A T s =70 C 35 A nom 35 A RM RM = 3 x nom 105 A SM t p = 10 ms, sin 180, 170 A Freewheeling - Diode V RRM T j =25 C 1200 V T s =25 C 39 A T s =70 C 30 A T s =25 C 44 A T s =70 C 35 A nom 35 A RM RM = 3 x nom 105 A SM t p = 10 ms, sin 180, 170 A NAB by SEMIKRON Rev
2 MiniSKiiP 2 Features Trench 4 IGBT s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connectio UL recognised file no. E63532 Typical Applicatio* Inverter up to 22 kva Typical motor power 11 kw Remarks V CEsat, V F = chip level value Case temp. limited to T C = 125 C max. (for baseplateless modules T C = T S ) product rel. results valid for T j 150 (recomm. T op = C) Absolute Maximum Ratings Symbol Conditio Values Unit Rectifier - Diode V RRM T j =25 C 1600 V T s =25 C, 52 A nom 13 A SM I 2 t 10 ms sin ms sin 180 T j =25 C 370 A 270 A T j =25 C 685 A 2 s 365 A 2 s T j C Module I t(rms) T terminal = 80 C, 20A per spring 40 A T stg C V isol AC sinus 50Hz, 1 min 2500 V Characteristics Symbol Conditio min. typ. max. Unit Inverter - IGBT V CE(sat) =35A T j =25 C V V V CE0 T j =25 C V r CE V T j =25 C m m V GE(th) V GE =V CE V, =1mA V ES V CE = 1200 V T j =25 C ma C ies f=1mhz 1.95 nf V CE =25V C oes f=1mhz 0.16 nf C res f=1mhz 0.12 nf Q G - 8 V V 200 nc R Gint T j =25 C 0.00 t d(on) t r V CC = 600 V =35A R G on =18 E on 4.3 mj R G off =18 t d(off) 300 t f 55 E off V GE = +15/-15 V 3.25 mj R th(j-s) per IGBT 1 K/W Chopper - IGBT V CE(sat) =35A T j =25 C V V V CE0 T j =25 C V r CE V ma T j =25 C m m V GE(th) V GE =V CE V, =1mA V ES V CE = 1200 V T j =25 C ma Q G - 8 V V 200 nc R Gint T j =25 C 0.00 ma NAB 2 Rev by SEMIKRON
3 MiniSKiiP 2 Features Trench 4 IGBT s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connectio UL recognised file no. E63532 Typical Applicatio* Inverter up to 22 kva Typical motor power 11 kw Remarks V CEsat, V F = chip level value Case temp. limited to T C = 125 C max. (for baseplateless modules T C = T S ) product rel. results valid for T j 150 (recomm. T op = C) Characteristics Symbol Conditio min. typ. max. Unit Chopper - IGBT t d(on) t r V CC = 600 V =35A R G on =18 E on 4.3 mj R G off =18 t d(off) 300 t f 55 E off V GE = +15/-15 V 3.25 mj R th(j-s) per IGBT 1 K/W Inverse - Diode V F = V EC =35A T j =25 C V V V F0 T j =25 C V V r F T j =25 C m m I RRM =35A 34 A Q rr di/dt off =1250A/µs V GE =-15V 5.6 µc E rr V CC = 600 V 2.4 mj R th(j-s) per Diode 1.2 K/W Freewheeling - Diode V F = V EC =35A T j =25 C V V V F0 T j =25 C V V r F T j =25 C m m I RRM =35A 34 A Q rr di/dt off =1250A/µs V GE =-15V 5.6 µc E rr V CC = 600 V 2.4 mj R th(j-s) per Diode 1.2 K/W Rectifier - Diode V F = V EC =13A T j =25 C V T j =125 C 1.1 V V F0 T j =25 C 1.0 V T j =125 C 0.8 V r F T j =25 C m T j =125 C 21 m R th(j-s) per Diode 1.25 K/W Module M s to heat sink Nm w 65 g Temperatur Seor R 100 R(T) T r =100 C, tolerance=3% R(T)=1000 [1+A(T-25 C)+B(T-25 C) 2 ], A = 7.635*10-3 C -1, B = 1.731*10-5 C ± 3% NAB by SEMIKRON Rev
4 Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature = f(t S ) Fig. 3: Typ. turn-on /-off energy = f ( ) Fig. 4: Typ. turn-on /-off energy = f (R G ) Fig. 5: Typ. trafer characteristic Fig. 6: Typ. gate charge characteristic 4 Rev by SEMIKRON
5 Fig. 7: Typ. switching times vs. Fig. 8: Typ. switching times vs. gate resistor R G Fig. 9: Traient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic by SEMIKRON Rev
6 pinout, dimeio pinout This is an electrostatic discharge seitive device (ESDS), international standard IEC , Chapter IX * The specificatio of our components may not be coidered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior coultation of our staff. 6 Rev by SEMIKRON
T s =25 C 18 A T s =70 C 18 A I Cnom 15 A I CRM I CRM = 3 x I Cnom 45 A V GES V V CC = 800 V. T s =25 C 23 A I C =15A
MiniSKiiP 1 Features Trench 4 IGBT s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised file no. E63532 Typical Applications*
More informationT s =25 C 116 A T s =70 C 87 A I Cnom 105 A I CRM I CRM = 2 x I Cnom 210 A V GES V V CC = 900 V V GE 20.
MiniSKiiP 2 SKiiP 28AHB16V4 Target Data Features Fast Trench IGBTs Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised file no.
More informationV CC = 800 V. T j = 175 C T s =70 C 77 A I C =70A. T j =25 C V V GE =15V chiplevel. T j =150 C V V CE0
MiniSKiiP 2 SKiiP 26AC12T4V1 Features Trench 4 IGBTs Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised: File no. E63532 Typical
More informationλ paste =0.8 W/(mK) T j = 150 C λ paste =2.5 W/(mK)
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More informationIGBT V CES T j =25 C 1200 V I C T c =25 C 114 A T j = 175 C T c =80 C 87 A I Cnom 75 A I CRM I CRM = 3xI Cnom 225 A V GES
SEMITRANS 2 Features V-IT = 6. Generation Trench V-IT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no.
More informationIGBT V CES T j =25 C 1200 V I C T c =25 C 311 A T j = 175 C T c =80 C 237 A I Cnom 200 A I CRM I CRM = 3xI Cnom 600 A V GES
SEMITRANS 3 Features V-IT = 6. Generation Trench V-IT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no.
More informationI C T s =25 C 389 A V CC = 800 V. T s =70 C 285 A I C T s =25 C 440 A T s =70 C 345 A V CC = 360 V. V GE 15 V T j =150 C 10 µs
IGBT 1 V CES T j =25 C 1200 V I C T s =25 C 473 A T j = 150 C T s =70 C 358 A I C T s =25 C 529 A T j = 175 C T s =70 C 425 A I Cnom 600 A I CRM I CRM = 3 x I Cnom 1800 A V GES -20... 20 V t psc V CC =
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