λ paste =0.8 W/(mK) T j = 150 C λ paste =2.5 W/(mK)

Transcription

1 MiniSKiiP 3 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter SKiiP 34NAB176V3 Features Trench IGBTs Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised: File no. E63532 Remarks Max. case temperature limited to T C =125 C Product reliability results valid for T j 125 C (recommended T j,op = C) I t(rms) limited to 40A for L1, L2, L3, U, V, W, -B, +B, B power connectors I t(rms) limited to 20A for -DC/U, -DC/V, -DC/W power connectors Distance between terminals +T -T and DC/W; +B and +DC; -B -DC/U DC/V and DC/W is not sufficient for basic insulation Please refer to MiniSKiiP Technical Explanations and Mounting Instructions for further information Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT V CES T j =25 C 1700 V I C I C T s =25 C 67 A T s =70 C 51 A T s =25 C 80 A T s =70 C 61 A I Cnom 58 A I CRM I CRM = 2 x I Cnom 116 A V GES V t psc V CC = 1200 V V GE 20 V T j =125 C 10 µs V CES 1700 V T j C Chopper - IGBT V CES T j =25 C 1700 V I C I C T s =25 C 67 A T s =70 C 51 A T s =25 C 80 A T s =70 C 61 A I Cnom 58 A I CRM I CRM = 2 x I Cnom 116 A V GES V t psc V CC = 1200 V V GE 20 V T j =125 C 10 µs V CES 1700 V T j C Inverse - Diode V RRM T j =25 C 1700 V T s =25 C 66 A T s =70 C 47 A T s =25 C 77 A T s =70 C 55 A nom 55 A RM RM = 2 x nom 110 A SM t p = 10 ms, sin 180, T j =150 C 550 A T j C Freewheeling - Diode V RRM T j =25 C 1700 V T s =25 C 66 A T s =70 C 47 A T s =25 C 77 A T s =70 C 55 A nom 55 A RM RM = 2 x nom 110 A SM t p = 10 ms, sin 180, T j =150 C 550 A T j C NAB by SEMIKRON Rev

2 MiniSKiiP 3 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter SKiiP 34NAB176V3 Features Trench IGBTs Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised: File no. E63532 Remarks Max. case temperature limited to T C =125 C Product reliability results valid for T j 125 C (recommended T j,op = C) I t(rms) limited to 40A for L1, L2, L3, U, V, W, -B, +B, B power connectors I t(rms) limited to 20A for -DC/U, -DC/V, -DC/W power connectors Distance between terminals +T -T and DC/W; +B and +DC; -B -DC/U DC/V and DC/W is not sufficient for basic insulation Please refer to MiniSKiiP Technical Explanations and Mounting Instructions for further information Absolute Maximum Ratings Symbol Conditions Values Unit Rectifier - Diode V RRM T j =25 C 1800 V T s =25 C 97 A T s =70 C 70 A T s =25 C 110 A T s =70 C 80 A nom DC current 57 A SM I 2 t 10 ms sin ms sin 180 T j =25 C 635 A T j =150 C 490 A T j =25 C 2000 A 2 s T j =150 C 1200 A 2 s T j C Module I t(rms) T terminal = 80 C, 20 A per spring 60 A T stg C V isol AC sinus 50 Hz, 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit Inverter - IGBT V CE(sat) I C =58A V GE =15V V CE0 r CE V GE =15V T j =25 C V T j =125 C V T j =25 C V T j =125 C V T j =25 C mω T j =125 C mω V GE(th) V GE =V CE V, I C =2.4mA V I CES V GE =0V, V CE = 1700 V, T j =25 C ma C ies f=1mhz 5.00 nf V CE =25V C oes f=1mhz 0.21 nf V GE =0V C res f=1mhz 0.17 nf Q G - 8 V V 480 nc R Gint T j =25 C 16 Ω t d(on) V CC = 900 V T j =125 C 290 ns t I C =40A r T j =125 C 40 ns R G on =1Ω E on T R G off =1Ω j =125 C 11.2 mj t d(off) di/dt on =990A/µs T j =125 C 650 ns t f di/dt off =250A/µs T j =125 C 100 ns E off du/dt = 4000 V/µs V GE = +15/-15 V L s =45nH T j =125 C 12.8 mj R th(j-s) per IGBT, 0.57 K/W R th(j-s) per IGBT, 0.42 K/W NAB 2 Rev by SEMIKRON

3 MiniSKiiP 3 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter SKiiP 34NAB176V3 Features Trench IGBTs Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised: File no. E63532 Remarks Max. case temperature limited to T C =125 C Product reliability results valid for T j 125 C (recommended T j,op = C) I t(rms) limited to 40A for L1, L2, L3, U, V, W, -B, +B, B power connectors I t(rms) limited to 20A for -DC/U, -DC/V, -DC/W power connectors Distance between terminals +T -T and DC/W; +B and +DC; -B -DC/U DC/V and DC/W is not sufficient for basic insulation Please refer to MiniSKiiP Technical Explanations and Mounting Instructions for further information Characteristics Symbol Conditions min. typ. max. Unit Chopper - IGBT V CE(sat) I C =58A V GE =15V V CE0 r CE V GE =15V T j =25 C V T j =125 C V T j =25 C V T j =125 C V T j =25 C mω T j =125 C mω V GE(th) V GE =V CE V, I C =2.4mA V I CES V GE =0V, V CE = 1700 V, T j =25 C ma Q G - 8 V V 480 nc R Gint T j =25 C 16 Ω t d(on) V CC = 900 V T j =125 C 290 ns t I C =40A r T j =125 C 40 ns R G on =1Ω E on T R G off =1Ω j =125 C 11.2 mj t d(off) di/dt on =990A/µs T j =125 C 650 ns t f di/dt off =250A/µs T j =125 C 100 ns E off du/dt = 4000 V/µs V GE = +15/-15 V L s =45nH T j =125 C 12.8 mj R th(j-s) per IGBT, 0.57 K/W R th(j-s) per IGBT, 0.42 K/W Inverse - Diode V F = V EC =55A V GE =0V V F0 T j =25 C V T j =125 C V T j =25 C V T j =125 C V r F T j =25 C mω T j =125 C mω I RRM =40A T j =125 C 62 A Q rr di/dt off =1050A/µs V GE =-15V T j =125 C 13.5 µc E rr V CC = 900 V T j =125 C 6.6 mj R th(j-s) per Diode, 0.84 K/W R th(j-s) per Diode, 0.68 K/W Freewheeling - Diode V F = V EC =55A V GE =0V V F0 T j =25 C V T j =125 C V T j =25 C V T j =125 C V r F T j =25 C mω T j =125 C mω I RRM =40A T j =125 C 62 A Q rr di/dt off =1050A/µs V GE =-15V T j =125 C 13.5 µc E rr V CC = 900 V T j =125 C 6.6 mj R th(j-s) per Diode, 0.84 K/W R th(j-s) per Diode, 0.68 K/W NAB by SEMIKRON Rev

4 Characteristics Symbol Conditions min. typ. max. Unit MiniSKiiP 3 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter Rectifier - Diode V F = V EC =57A V GE =0V V F0 r F chip T j =25 C V T j =125 C V T j =25 C V T j =125 C V T j =25 C mω T j =125 C mω R th(j-s) per Diode, 0.86 K/W R th(j-s) per Diode, 0.72 K/W Module M s to heat sink Nm w 82 g L CE 26 nh SKiiP 34NAB176V3 Temperature Sensor R 100 T r =100 C, tolerance=3% 1670 ± 3% Ω Features Trench IGBTs Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised: File no. E63532 R(T) R(T)=1000Ω[1+A(T-25 C)+B(T-25 C) 2 ], A = 7.635*10-3 C -1, B = 1.731*10-5 C -2 Remarks Max. case temperature limited to T C =125 C Product reliability results valid for T j 125 C (recommended T j,op = C) I t(rms) limited to 40A for L1, L2, L3, U, V, W, -B, +B, B power connectors I t(rms) limited to 20A for -DC/U, -DC/V, -DC/W power connectors Distance between terminals +T -T and DC/W; +B and +DC; -B -DC/U DC/V and DC/W is not sufficient for basic insulation Please refer to MiniSKiiP Technical Explanations and Mounting Instructions for further information NAB 4 Rev by SEMIKRON

5 Fig. 1: Typ. output characteristic, inclusive R CC'+ EE' Fig. 2: Typ. rated current vs. temperature I C = f(t S ) Fig. 3: Typ. turn-on /-off energy = f (I C ) Fig. 4: Typ. turn-on /-off energy = f (R G ) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic by SEMIKRON Rev

6 Fig. 7: Typ. switching times vs. I C Fig. 8: Typ. switching times vs. gate resistor R G Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic 6 Rev by SEMIKRON

7 pinout, dimensions pinout by SEMIKRON Rev

8 This is an electrostatic discharge sensitive device (ESDS), international standard IEC , chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes. 8 Rev by SEMIKRON