Беларусь г.минск тел./факс 8(017) электронные компоненты радиодетали e:mail TARGET SPECIFICATION

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1 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil TARGET SPECIFICATION ( TENTATIVE ) Device Nme IGBT Module Type Nme 1MBI12UE-33 Spec. No. MTF 217 ) Nov VF(terminl),Indiction on module Nov Nov K.Hrguchi T.Kog S.Igrshi MTF217 1

2 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil 1MBI12UE Outline Drwing ( Unit mm ) 2. Equivlent circuit ) Nov VF(terminl),Indiction on module MTF217 2

3 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil 3.Absolute Mximum Rtings ( t Tc= 2 C unless otherwise specified ) Items Symbols Conditions Mximum Rtings Units Collector-Emitter voltge Gte-Emitter voltge VCES 33 V VGES ±2 V Ic Continuous Tc=2 2 Tc=8 12 Collector current Icp 1ms Tc=2 4 Tc=8 24 A -Ic 12 -Ic pulse 1ms 24 Collector Power Dissiption Pc 1 device 14.7 kw Junction temperture Storge temperture Tj 1 Tstg -4~12 Isoltion voltge between terminl nd bse (*1) Viso AC 1min. 6. kvac Mounting.7 Screw Torque (*2) Min Terminls - 1 Nm Sense Terminls (*1) All terminls should be connected together when isoltion test will be done. (*2) Recommendble Vlue Mounting 4.2~.7 Nm (M6) Min Terminls 8~1 Nm (M8) Sense Terminls 1.8~2.1 Nm (M4) 2.1 ) Nov VF(terminl),Indiction on module MTF217 3

4 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil 4. Electricl chrcteristics ( t Tj= 2 C unless otherwise specified) Items Symbols Conditions Chr cter istics min. typ. mx. Units Zero gte voltge Collector current ICES VCE=33V VGE=V ma Gte-Emitter lekge current IGES VCE=V VGE=±2V na Gte-Emitter threshold voltge VGE(th) VCE=2V Ic=12mA V Collector-Emitter sturtion voltge Input cpcitnce VCE(st) (terminl) VCE(st) (chip) Cies Ic=12A VGE=+1V Tj= 2 Tj=12 Tj=1 Tj= 2 Tj=12 Tj=1 VCE=V,VCE=1V,f=1MHz nf Turn-on time ton Vcc=18V Ls=1nH ー μs V Turn-off time tr toff tf Ic=12A Tj=1-1.4 ー VGE=±1V - 2. ー RG=1.6Ω -.4 ー ) Nov VF(terminl),Indiction on module Forwrd on voltge VF (terminl) VF (chip) IF=12A VGE=V Tj= 2 Tj=12 Tj=1 Tj= 2 Tj=12 Tj=1 MTF () 3.1 () Reverse recovery time trr IF=12A Tj=1 -.9 ー Led resistnce, terminl-chip R led mω 4 V

5 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil Ther ml resistnce chrcteristics Items Symbols Conditions Chrcter istics min. typ. mx. Units Therml resistnce(1device) Contct Therml resistnce(1device) (*3) Rth(j-c) Rth(c-f) IGBT FWD IGBT FWD /kw (*3) This is the vlue which is defined mounting on the dditionl cooling fin with therml compound(1w/m ). 6. Indiction on module Disply on the module lbel - Logo of production - Type nme 1MBI12UE-33 - IC, VCES rting 12A 33V - Lot No. ( digits) - Plce of mnufcturing (code) - Br code with seril No. 7.Applicble ctegor y This specifiction is pplied to IGBT Module nmed 1MBI12UE Stor ge nd tr nspor ttion notes The module should be stored t stndrd temperture of to 3 C nd humidity of 4 to 7%. Store modules in plce with few temperture chnges in order to void condenstion on the module surfce. Avoid exposure to corrosive gses nd dust. Avoid excessive externl force on the module. ) Nov VF(terminl),Indiction on module Store modules with unprocessed terminls. Do not drop or otherwise shock the modules when trnsporting. MTF217

6 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil 9.Definitions of switching time *Ls=1nH Test circuit Definitions of switching time ~ 9% V V L VGE tr r Vcc VCE 9% I r r ~ Ic 9% RG VGE VCE V A Ic 1% tr ( i ) 1% VCE 1% ~ tf Ic tr to n to f f 1. Pck ing nd Lbeling Disply on the pcking box - Logo of production - Type nme - Lot No - Products quntity in pcking box ) Nov VF(terminl),Indiction on module MTF217 6

7 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil test results Relibility Test Items Test ctegories Mechnicl Tests Environment Tests Terminl Strength (Pull test) Mounting Strength Vibrtion Shock Test items High Temperture Storge Low Temperture Storge Temperture Humidity Storge Unsturted Pressurized Vpor Temperture Cycle Therml Shock Reference norms Test methods nd conditions EIAJ ED-471 (Aug.-21 edition) Pull force Test time Screw torque 4N 1±1 sec. 1.8 ~ 2.1 N m (M4) Test Method 41 method Ⅰ Test Method ~.7 N m (M6) method Ⅱ 8.~ 1. N m (M8) Test time 1±1 sec. Rnge of frequency Sweeping time Accelertion Sweeping direction Test time 1 ~ Hz 1 min. 1m/s 2 Ech X,Y,Z xis 6 hr. (2hr./direction) Test Method 43 Reference 1 Condition code B Mximum ccelertion m/s 2 Test Method 44 Pulse width 6.msec. Condition code B Direction Ech X,Y,Z xis Test time 3 times/direction Storge temp. Test durtion Storge temp. Test durtion Storge temp. Reltive humidity Test durtion Test humidity Test durtion Dwell time Number of cycles 12 ± o C hr. -4 ± o C hr. 8 ± 2 o C 8 ± % hr. 12 ± 2 o C 8 ± % 96hr. Low temp. -4 ± o C High temp. 12 ± o C RT ~ 3 o C High ~ RT ~ Low ~ RT 1hr..hr. 1hr..hr. 1 cycles + High temp. 1 - o C Test Method 21 Test Method 22 Test Method 13 Test code C Test Method 13 Test code E Test Method 1 Test Method 37 method Ⅰ Condition code B Number of smple Acceptnce number ( 1 ) ( 1 ) ( 1 ) ( 1 ) ( 1 ) ( 1 ) ( 1 ) ( 1 ) ( 1 ) ( 1 ) ) Nov VF(terminl),Indiction on module Low temp. - o C Used liquid Wter with ice nd boiling wter Dipping time Trnsfer time Number of cycles min. pr ech temp. 1 sec. 1 cycles + MTF217 7

8 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil Relibility Test Items Test ctegories Endurnce Tests 1 2 High temperture Bis (for gte) 3 4 Test items High temperture Reverse Bis Temperture Humidity Bis Intermitted Operting Life (Power cycle) ( for IGBT ) Bis Voltge Bis Method Test durtion Bis Voltge Bis Method Test durtion Reltive humidity Bis Voltge Bis Method Test durtion ON time OFF time Test temp Number of cycles Test methods nd conditions T = 12 ± o C (Tj 1 o C) VC =.8 VCES Applied DC voltge to C-E VGE = V hr. T = 12 ± o C (Tj 1 o C) VC = VGE = +2V or -2V Applied DC voltge to G-E VGE = V hr. 8 ± 2 o C 8 ± % VC =.8 VCES Applied DC voltge to C-E VGE = V hr. 2 sec. 18 sec. Δ Tj = 1 ± deg Tj 1 o C, T = 2 ± o C cycles Reference norms EIAJ ED-471 (Aug.-21 edition) Test Method 16 Acceptnce number Test Method ( 1 ) Test Method Test Method 12 Condition code C Number of smple ( 1 ) ( 1 ) ( 1 ) Filure Criteri ) Nov VF(terminl),Indiction on module Items Electricl chrcteristic Visul inspection Note Chrcteristics Lekge current Gte threshold voltge Sturtion voltge Forwrd voltge Therml IGBT resistnce FWD Isoltion voltge Visul inspection Peeling Plting nd the others Symbols ICES ±IGES VGE(th) VCE(st) VF ΔVGE or ΔVCE ΔVF Viso - Filure criteri Lower limit Upper limit - USL 2 - USL 2 LSL.8 USL USL USL USL USL 1.2 Broken insultion The visul smple MTF217 Units ma ua ma V V mv mv LSL Lower specified limit. USL Upper specified limit. Ech prmeter mesurement red-outs shll be mde fter stbilizing the components t room mbient for 2 hours minimum, 24 hours mximum fter removl from the tests. And in cse of the wetting tests, for exmple, moisture resistnce tests, ech component shll be mde wipe or dry completely before the mesurement. - 8 Notes

9 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil Collector cur r ent vs. Collector -Emitter voltge (typ.) Tj= 2 / chip Collector cur r ent vs. Collector -Emitter voltge (typ.) Tj= 1 C / chip Collector current Ic [A] VGE=2V 1V 12V 1V Collector current Ic [A] VGE=2V 1V 12V 1V 4 2 8V 4 2 8V Collector-Emitter voltge VCE [V] Collector-Emitter voltge VCE [V] Collector cur r ent vs. Collector -Emitter voltge (typ.) VGE=1V / chip Collector -Emitter voltge vs. Gte-Emitter voltge (typ.) Tj=2 C / chip Collector current Ic [A] Tj=2 Tj=12 Tj=1 Collector - Emitter voltge VCE [ V ] Ic=24A Ic=12A Ic= 6A Collector-Emitter voltge VCE [V] Gte - Emitter voltge VGE [ V ] Cpcitnce vs. Collector -Emitter voltge (typ.) Dynmic Gte chr ge (typ.) VGE=V, f= 1MHz, Tj= 2 C Vcc=18V, Ic=12A,Tj= 2 C. 2 VCE 2 ) Nov VF(terminl),Indiction on module Cpcitnce Cies, Coes, Cres [ nf ] Cies Cres Coes Collector-Emitter voltge VCE [V] Collector-Emitter voltge VCE [V] 1 1 VGE Gte chrge Qg [ μc ] MTF217 9 Gte-Emitter voltge VGE [V]

10 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil S witching time vs. Collector current (typ.) Vcc=18V, VGE=±1V, Rg=1.6Ω, Tj= 2 C S witching time vs. Collector current (typ.) Vcc=18V, VGE=±1V, Rg=1.6Ω, Tj=1 C Switching time ton, tr, toff, tf [ nsec ] 1 toff ton tf tr Switching time ton, tr, toff, tf [ nsec ] toff ton tf tr Collector current Ic [ A ] Collector current Ic [ A ] S witching time vs. Gte resistnce (typ.) Vcc=18V, Ic=12A, VGE=±1V, Tj= 1 C Switching loss vs. Collector current (typ.) Vcc=18V, VGE=±1V, Rg=1.6Ω,Ls=1nH Switching time ton, tr, toff, tf [ nsec ] ton toff tr tf Switching loss Eon, Eoff [ mj/pulse ] Eon,Tj=2 Eon,Tj=12 Eon,Tj=1 Eoff,Tj=2 Eoff,Tj=12 Eoff,Tj= Gte resistnce Rg [ Ω ] 1 2 Collector current Ic [ A ] Switching loss vs. Gte resistnce (typ.) Reverse bis sfe operting re (mx.) Vcc=18V, Ic=12A, VGE=±1V, Ls=1nH +VGE=AJ1,-VGE 1V, RG 1.6Ω,Tj=1 C () 3 ) Nov VF(terminl),Indiction on module Switching loss Eon, Eoff [ mj/pulse ] Eon,Tj=12 Eon,Tj=1 Eoff,Tj=12 Eoff,Tj= Gte resistnce Rg [ Ω ] Collector current Ic [ A ] Collector - Emitter voltge VCE [ V ] MTF217 1

11 Беларусь г.минск тел./факс 8(17) электронные компоненты радиодетали emil Беларусь г.минск тел./факс 8(17) emil Forwrd cur rent vs. Forwrd on voltge (typ.) Switching loss vs. Collector cur rent (typ.) chip Vcc=18V, VGE=±1V, Rg=1.6Ω, Ls=1nH Forwrd current IF [ A ] Tj=2 Tj=12 Tj=1 Switching loss Err [ mj/pulse ] 2 1 Err,Tj=2 Err,Tj=12 Err,Tj= Forwrd on voltge VF [ V ] Forwrd current IF [ A ] Switching loss vs. Gte resistnce (typ.) Reverse recovery chr cteristics (typ.) Vcc=18V, IF=12A, VGE=±1V, Ls=1nH Vcc=18V, VGE=±1V, Rg=1.6Ω Switching loss Err [ mj/pulse ] 2 1 Err,Tj=12 Err,Tj=1 Reverse recovery current Irr [ A ] Reverse recovery time trr [ nsec ] trr,tj=2 trr,tj=12 trr,tj=1 Irr,Tj=2 Irr,Tj=12 Irr,Tj= Gte resistnce Rg [ Ω ] Forwrd current IF [ A ] Tr nsient ther ml r esistnce (mx.) 1. ) Nov VF(terminl),Indiction on module Therml resistnse Rth(j-c) [ C/W ] FWD 1. IGBT Pulse width Pw [ sec ] MTF217