Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Size: px
Start display at page:

Download "Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous"

Transcription

1 2MBI225VN-12-5 IGBT MODULE (V series) 12V / 225A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 12 V Gate-Emitter voltage VGES ±2 V Ic Continuous Tc=25 C 3 Tc= C 225 Collector current Ic pulse 1ms 45 A -Ic 225 -Ic pulse 1ms 45 Collector power dissipation Pc 1 device 17 W Junction temperature Tj 175 Operating junction temperature (under switching conditions) Tjop 15 Case temperature TC 125 C Storage temperature Tstg -4 to +125 Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso AC : 1min. 25 VAC Screw torque Mounting (*3) Terminals (*4) 4.5 N m Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : Mounting : Nm (M5) Note *4: Recommendable value : Terminals : Nm (M6) Electrical characteristics (at Tj= 25 C unless otherwise specified) Items Symbols Conditions Characteristics min. typ. max. Units Zero gate voltage collector current ICES VGE = V, VCE = 12V ma Gate-Emitter leakage current IGES VCE = V, VGE = ±2V na Gate-Emitter threshold voltage VGE (th) VCE = 2V, IC = 225mA V Collector-Emitter saturation voltage Tj=25 C VCE (sat) Tj=125 C (terminal) VGE = 15V Tj=15 C IC = 225A Tj=25 C VCE (sat) Tj=125 C (chip) Tj=15 C V Internal gate resistance Rg(int) Ω Input capacitance Cies VCE = 1V, VGE = V, f = 1MHz nf ton VCC = 6V Turn-on time tr IC = 225A tr (i) VGE = ±15V nsec Turn-off time toff RG = 1.6Ω tf LS = 8nH Forward on voltage Tj=25 C VF Tj=125 C (terminal) VGE = V Tj=15 C IF = 225A Tj=25 C VF Tj=125 C (chip) Tj=15 C V Reverse recovery time trr IF = 225A nsec Resistance R T=25 C T= C Ω B value B T=25/5 C K a MARCH 214

2 2MBI225VN-12-5 Thermal resistance characteristics Characteristics Items Symbols Conditions min. typ. max. Inverter IGBT Thermal resistance (1device) Rth(j-c) Inverter FWD Contact thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. Units C/W 2

3 2MBI225VN-12-5 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 15 C / chip 5 5 C o l l e c t o r c u r r e n t : I c [ A ] VGE=2V 15V 12V 1V 8V C o l l e c t o r c u r r e n t : I c [ A ] VGE= 2V 15V 12V 1V 8V Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25 C / chip 5 Tj=25 C 125 C 1 C o l l e c t o r C u r r e n t : I c [ A ] C C o l l e c t o r - E m i t t e r V o l t a g e : V CE [V] Ic=45A Ic=225A Ic=112A Collector-Emitter Voltage: VCE [V] Gate-Emitter Voltage: VGE [V] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= V, ƒ= 1MHz, Tj= 25 C Dynamic Gate Charge (typ.) Vcc=6V, Ic=225A, Tj= 25 C G a t e C a p a c i t a n c e : C i e s, C o e s, C r e s [ n F ] Cies 1 Coes 1 Cres Gate-Emitter voltage: VGE [V] VCE VGE Gate charge: Qg [nc] 3

4 2MBI225VN-12-5 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=1.6Ω, Tj=25 C Vcc=6V, VGE=±15V, Rg=1.6Ω, Tj=125 C, 15 C S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] 1 toff ton tr tf S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] 1 Tj=15 o C toff ton tr tf Collector current: Ic [A] Collector current: Ic [A] Switching time vs. Gate resistance (typ.) Vcc=6V, Ic=225A, VGE=±15V, Tj=125 C, 15 C Switching loss vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=1.6Ω, Tj=125 C, 15 C S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] Tj=15 o C toff ton tr tf S w i t c h i n g l o s s : E o n, E o f f, E r r [ m J / p u l s e ] Tj=15 o C Eoff Err Eon Gate resistance: Rg [Ω] Collector current: Ic [A] Switching loss vs. Gate resistance (typ.) Vcc=6V, Ic=225A, VGE=±15V, Tj=125 C, 15 C Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, Rg=1.6 Ω, Tj=15 C S w i t c h i n g l o s s : E o n, E o f f, E r r [ m J / p u l s e ] 15 5 Tj=15 o C Gate resistance: Rg [Ω] Eon Eoff Err Collector current: Ic [A] Notice) Switching characteristics of VCE is defined between Sense C and Sense E1 for Upper arm and Sense E1 and Sense E2 for Lower arm

5 2MBI225VN Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) Vcc=6V, VGE=±15V, Rg=1.6Ω, Tj=25 C F o r w a r d c u r r e n t : I F [ A ] C Tj=25 C 125 C R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ] R e v e r s e r e c o v e r y t im e : t r r [ n s e c ] Irr trr Forward on voltage: VF [V] Forward current: IF [A] R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ] R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ] Reverse Recovery Characteristics (typ.) Vcc=6V, VGE=±15V, Rg=1.6Ω, Tj=125 C, 15 C 1 Tj=15 o C Irr trr Thermal resistanse: Rth(j-c) [ C/W] *** Transient Thermal Resistance (max.) FWD IGBT τ [sec] Rth IGBT [ C/W] FWD Forward current: IF [A] Pulse Width : Pw [sec] [THERMISTOR] Temperature characteristic (typ.) FWD safe operating area (max.) Tj=15 C 5 R e s i s t a n c e : R [ k Ω ] Reverse recovery current: Irr [A] Notice) Switching characteristics of VCE is defined between Sense C and Sense E1 for Upper arm and Sense E1 and Sense E2 for Lower arm. Pmax=225kW 5 15 Temperature [ C] 5

6 2MBI225VN-12-5 Outline Drawings (Unit : mm) OUT N P Weight: 3g (typ.) Equivalent Circuit [ Inverter ] [ Thermistor ] C P T1 T2 G1 E1 OUT G2 E2 N 6

7 2MBI225VN-12-5 WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 214. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7

8 Technical Information Please refer to URLs below for futher information about products, application manuals and technical documents. 关于本规格书中没有记载的产品信息, 应用手册, 技术资料等, 请参考以下链接 本データシートに記載されていない製品情報, アプリケーションマニュアル, 技術資料は以下の URL をご参照下さい FUJI ELECTRIC Power Semiconductor WEB site 日本 Global 中国 Europe North America Information 日本 1 半導体総合カタログ 2 製品情報 3 アプリケーションマニュアル 4 技術資料 5 マウンティングインストラクション 6 IGBT 損失シミュレーションソフト 7 AT-NPC 3-Level 損失シュミレーションソフト 8 富士電機技報 9 製品のお問い合わせ 1 改廃のお知らせ Global 1 Semiconductors General Catalog 2 Product Information 3 Application Manuals 4 Technical Documents 5 Mounting Instructions 6 IGBT Loss Simulation Software 7 AT-NPC 3-Level Loss Simulation Software 8 Fuji Electric Journal 9 Contact 1 Revised and discontinued product information 中国 1 半导体综合目录 2 产品信息 3 应用手册 4 技术资料 5 安装说明书 6 IGBT 损耗模拟软件 7 AT-NPC 3-Level 损耗模拟软件 8 富士电机技报 9 产品咨询 1 产品更改和停产信息

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous 2MBI225VN-2-5 IGBT MODULE (V series) 2V / 225A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor

More information

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous

Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Continuous IGBT MODULE (V series) V / 45A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 150

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 150 6MBI15VX125 IGBT MODULE (V series) 12V / 15A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible

More information

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100 7MBR1VP65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50 7MBR5VM1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75 7MBRVR IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100 6MBIVX125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible

More information

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 75

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 75 7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor

More information

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100

Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100 7MBR1VP65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for

More information

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75

Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 75 7MBRVR IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor

More information

Chapter 11. Reliability of power module

Chapter 11. Reliability of power module Chapter 11 Reliability of power module CONTENTS Page 1 Basis of the reliability 11-2 2 Reliability test condition 11-3 3 Power cycle curve 11- Market of the power modules will widely spread towards the

More information

GT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking

GT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking GTQ TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTQ High Power Switching Applications Motor Control Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf

More information

Target Specification (Tentative)

Target Specification (Tentative) Беларусь г.минск тел./факс 8(17)2646 электронные компоненты радиодетали www.fotorele.net e:mail minsk17@tut.by Беларусь г.минск тел./факс 8(17)2646 www.fotorele.net e:mail minsk17@tut.by Fuji Electric

More information

CM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack

CM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8 9±0. -M6 NUTS G +1.0 0 0.

More information

CM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack

CM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9±0. G 80 6±0. CE E C G E

More information

< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R

< HVIGBT MODULES > CM1500HC-66R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R CMHC-R CMHC-R I C A V CES V -element in a Pack Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING

More information

) unless otherwise specified Symbol Description Values Units

) unless otherwise specified Symbol Description Values Units IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss

More information

GSID300A125S5C1 6-Pack IGBT Module

GSID300A125S5C1 6-Pack IGBT Module 6-Pack IGBT Module Features: Trench & Field Stop IGBT Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 2.V @ I C = 3A, T j =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance

More information

5SNA 1000G HiPak IGBT module

5SNA 1000G HiPak IGBT module Datasheet 5SYA 1465-02, Nov. 2018 5SNA 1000G650300 HiPak IGBT module VCE = 6500 V IC = 1000 A Ultra-low-loss, rugged SPT ++ chip-set Exceptional ruggedness and highest current rating High insulation package

More information

5SNA 1500E HiPak IGBT Module

5SNA 1500E HiPak IGBT Module Data Sheet, Doc. No. 5SYA 47-7 2-24 5SNA 5E3335 HiPak IGBT Module VCE = 33 V IC = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling

More information

5SNG 0150Q Pak phase leg IGBT Module

5SNG 0150Q Pak phase leg IGBT Module Data Sheet, Doc. No. 5SYA 1447-216-9 5SNG 15Q173 62Pak phase leg IGBT Module VCE = 17 V IC = 15 A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low

More information

5SNE 1000E HiPak Chopper IGBT Module

5SNE 1000E HiPak Chopper IGBT Module Data Sheet, Doc. No. 5SYA 457-8-27 5SNE E333 HiPak Chopper IGBT Module VCE = 33 V IC = A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power

More information

5SNG 0200Q Pak phase leg IGBT Module

5SNG 0200Q Pak phase leg IGBT Module Data Sheet, Doc. No. 5SYA 1448-216-9 5SNG Q17 62Pak phase leg IGBT Module VCE = 17 V IC = A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low thermal

More information

< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module

< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module < HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE

More information

GSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application:

GSID075A060B1A4. Preliminary Data Sheet GSID075A060B1A4. IGBT Module. Features: Application: IGBT Module Features: Short Circuit Rated 5μs Low Saturation Voltage: V CE (sat) = 1.70V @ I C = A, T C =25 Low Switching Loss 100% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with RoHS

More information

< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R

< HVIGBT MODULES > CM750HG-130R. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM750HG-130R I C 75A V CES V -element in a pack High Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING &

More information

5SNA 2400E HiPak IGBT Module

5SNA 2400E HiPak IGBT Module Data Sheet, Doc. No. 5SYA 1417-4 2-214 5SNA 24E1735 HiPak IGBT Module VCE = 17 V IC = 24 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power

More information

GSID300A120S5C1 6-Pack IGBT Module

GSID300A120S5C1 6-Pack IGBT Module 6-Pack IGBT Module Features: Short Circuit Rated 1μs Low Saturation Voltage: V CE (sat) = 1.9V @ I C = 3A, T C =25 Low Switching Loss 1% RBSOA Tested(2 Ic) Low Stray Inductance Lead Free, Compliant with

More information

5SNA 1300K StakPak IGBT Module

5SNA 1300K StakPak IGBT Module Data Sheet, Doc. No. 5SYA 1432-1 1-216 5SNA 13K453 StakPak IGBT Module VCE = 45 V IC = 13 A Fails into stable shorted state Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High

More information

ABB HiPak. IGBT Module 5SNA 1600N VCE = 1700 V IC = 1600 A

ABB HiPak. IGBT Module 5SNA 1600N VCE = 1700 V IC = 1600 A VCE = 17 V IC = 16 A ABB HiPak IGBT Module 5SNA 16N171 Doc. No. 5SYA1564-2 Apr 14 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

5SNG 1000X PRELIMINARY LinPak phase leg IGBT module

5SNG 1000X PRELIMINARY LinPak phase leg IGBT module Data Sheet, Doc. No. 5SYA 1449- Aug 16 5SNG 1X173 PRELIMINARY LinPak phase leg IGBT module VCE = 17 V IC = 2 x 1 A Ultra low inductance phase-leg module Compact design with very high current density Paralleling

More information

ABB HiPak. IGBT Module 5SNA 0800N VCE = 3300 V IC = 800 A

ABB HiPak. IGBT Module 5SNA 0800N VCE = 3300 V IC = 800 A VCE = 33 V IC = 8 A ABB HiPak IGBT Module 5SNA 8N331 Doc. No. 5SYA 1591-2 4-214 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

Insulated Gate Bipolar Transistor (IGBT)

Insulated Gate Bipolar Transistor (IGBT) BUK856-8A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 8 V

More information

CM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack

CM1400DU-24NF. APPLICATION UPS & General purpose inverters, etc CM1400DU-24NF. IC A VCES V Insulated Type 2-elements in a pack IC... 1 CES... 1 Insulated Type -elements in a pack PPLICTION UPS & General purpose inverters, etc OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm,b HOUSING Type (J. S. T. Mfg. Co. Ltd) : HR-N B : HR-N

More information

APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA

APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA CMHG-3XA CMHG-3XA I C A V CES 65 V -element in pack High Insulated type CSTBT TM (III) / RFC Diode AlSiC baseplate APPLICATION Traction drives,

More information

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C) TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications

More information

ABB HiPak. IGBT Module 5SNE 0800M VCE = 1700 V IC = 800 A

ABB HiPak. IGBT Module 5SNE 0800M VCE = 1700 V IC = 800 A VCE = 17 V IC = 8 A ABB HiPak IGBT Module 5SNE 8M171 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power

More information

SiC Power Module BSM300D12P2E001

SiC Power Module BSM300D12P2E001 SiC Power Module BSM3D2P2E Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 7 9 8 3,4 Features ) Low surge, low switching loss.

More information

SiC Power Module BSM180D12P2C101

SiC Power Module BSM180D12P2C101 SiC Power Module Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 98(N.C) 3,4 Features ) Low surge, low switching loss. 7(N.C)

More information

STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

Absolute Maximum Ratings Parameter Max. Units

Absolute Maximum Ratings Parameter Max. Units PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested

More information

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse

More information

STARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT 1V/A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications

More information

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features. Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 V(typ.) @ I C = 4 A Co-packaged

More information

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD3HFY12C6S 12V/3A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

ABB HiPak. IGBT Module 5SNE 0800G VCE = 4500 V IC = 800 A

ABB HiPak. IGBT Module 5SNE 0800G VCE = 4500 V IC = 800 A VCE = 45 V IC = 8 A ABB HiPak IGBT Module 5SNE 8G453 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high

More information

STARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD6SGK12C2S 12V/6A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness. They

More information

SiC Power Module BSM080D12P2C008

SiC Power Module BSM080D12P2C008 SiC Power Module BSM8DPC8 Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 98(N.C) 3,4 Features ) Low surge, low switching

More information

IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 20± ±0.5 14±0.2 30± φ 7 MOUNTING HOLES

IC A. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers 20± ±0.5 14±0.2 30± φ 7 MOUNTING HOLES 4th-ersion MITSUBISHI HIGBT MODULES CM1DC-4N CM1DC-4N IC... 1 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT Soft Reverse Recovery Diode PPLICTION Traction drives, High

More information

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF PD - 973 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction

More information

STARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD600HFT120C2S_G8 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are

More information

Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current

Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V

More information

IRGP4263PbF IRGP4263-EPbF

IRGP4263PbF IRGP4263-EPbF IRGP3PbF IRGP3-EPbF Insulated Gate Bipolar Transistor V CES = 5V I C = 5A, T C =1 C C G G t SC 5.5µs, T J(max) = 175 C V CE(ON) typ. = 1.7V @ IC = A Applications Industrial Motor Drive Inverters UPS Welding

More information

ECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units

ECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units Bulletin I27279 /6 GBXF2K IGBT SIXPACK MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse

More information

IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C

IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark

More information

ECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units

ECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units IGBT PIM MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

More information

SiC Power Module BSM180D12P3C007

SiC Power Module BSM180D12P3C007 SiC Power Module BSM8D2P3C7 Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 98(N.C) 3,4 Features ) Low surge, low switching

More information

50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.

50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units. "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features Gen. 4 Ultrafast Speed IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor

More information

IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance

IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode

More information

KDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V

KDG25R12KE3. Symbol Description Value Units V CES Collector-Emitter Blocking Voltage 1200 V V GES Gate-Emitter Voltage ±20 V KDGR12KE3 IGBT Module KDGR12KE3 Features: IGBT Inverter Short Circuit Rated μs IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications:

More information

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C)

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C) TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = V Low saturation voltage: VCE (sat) = V (max) High speed: tf =.

More information

IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 1 www.irf.com 4/11/8 PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17

More information

SKP06N60 SKA06N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

SKP06N60 SKA06N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time

More information

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)

More information

SiC Power Module BSM300D12P2E001

SiC Power Module BSM300D12P2E001 SiC Power Module BSM3D2P2E Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 7 9 8 3,4 Features ) Low surge, low switching loss.

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications Unit: mm Small package Low ON resistance : R on =. Ω (max) (@V GS

More information

IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.

IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse

More information

STARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD25FSY2L2S 2V/25A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM8DZB-N CM8DZB-N IC...8 CES... 1 Insulated Type -element in a Pack ISiC Baseplate Trench Gate IGBT : CSTBT TM Soft Reverse Recovery Diode PPLICTION Traction drives, High Reliability Converters / Inverters,

More information

CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules M6HG-1H rd-ersion M6HG-1H I...6 A S... 6 High Insulated Type 1-element in a Pack AISi Baseplate APPLIATION Traction drives, High Reliability onverters / Inverters, D choppers OUTLIN DRAWING & IRUIT DIAGRAM

More information

IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power

More information

20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.

20MT120UF FULL-BRIDGE IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features. 5/ I27124 rev. D 2/3 "FULL-BRIDGE" IGBT MTP 2MT12UF UltraFast NPT IGBT Features UltraFast Non Punch Through (NPT) Technology Positive V CE(ON) Temperature Coefficient 1µs Short Circuit Capability HEXFRED

More information

FGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj

FGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj FGHTSQDNL IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding

More information

IRGB30B60K IRGS30B60K IRGSL30B60K

IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE on) Non Punch Through IGBT Technology. µs Short Circuit Capability. Square RBSOA. Positive VCE on) Temperature Coefficient. Maximum Junction Temperature

More information

IRGS4062DPbF IRGSL4062DPbF

IRGS4062DPbF IRGSL4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square

More information

GC15MPS V SiC MPS Diode

GC15MPS V SiC MPS Diode Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 135 C) = 40 A Q C = 66 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal

More information

GB2X100MPS V SiC MPS Diode

GB2X100MPS V SiC MPS Diode Silicon Carbide Schottky Diode V RRM = 1200 V I F (Tc = 100 C) = 246 A* Q C = 796 nc* Features High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit Q C /I F Low Thermal

More information

Not Recommend. for New Design CM35MX-24A. APPLICATION General purpose Inverters, Servo Amplifiers CM35MX-24A

Not Recommend. for New Design CM35MX-24A. APPLICATION General purpose Inverters, Servo Amplifiers CM35MX-24A CMMX- CMMX- PPLTION General purpose Inverters, Servo mplifiers OUTLINE DRWING & CIRCUIT DIGRM 11. 118.1 11 ±. 99 9. 8.. 11.66 1.8.1 6.9. 8..6 1 9 8 6 1 9 8 6 1.. 6 8 9 6 61.8 (.) 1.9 16.9 R(1~) S(~6) T(9~1)

More information

STARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD4PIY12C5S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT

IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT PD- 95899A IRGPS4B12UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

More information

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3. HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant

More information

TRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

TRENCHSTOP Series. Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175

More information

225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor

225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor PDP TRENCH IGBT PD - 962 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved

More information

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering

More information

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time

More information

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C) SC7 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) SC7 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) =. V (max) (IC = A) High speed switching time:

More information

TA7262P,TA7262P(LB),TA7262F

TA7262P,TA7262P(LB),TA7262F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7262P,TA7262P(LB),TA7262F DC MOTOR DRIVER (3 PHASE Bi DIRECTIONAL) The TA7262P / P (LB) / F are 3 Phase Bi Directional supply voltage control

More information

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time

More information

n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF

n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF IRG7PH3UDMPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V CE (ON) trench IGBT Technology Low Switching Losses Square

More information

Беларусь г.минск тел./факс 8(017) электронные компоненты радиодетали e:mail

Беларусь г.минск тел./факс 8(017) электронные компоненты радиодетали   e:mail Беларусь г.минск тел./факс 8(17)2-6-46 электронные компоненты радиодетали www.fotorele.net e:mail minsk17@tut.by Беларусь г.минск тел./факс 8(17)2-6-46 www.fotorele.net e:mail minsk17@tut.by Fuji Discrete

More information

IRG7PH35UDPbF IRG7PH35UD-EP

IRG7PH35UDPbF IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA % of the parts tested for I LM Positive V CE (ON) temperature

More information

5SMY 12H1280. IGBT-Die V CE = 1200 V I C = 57 A. Die size: 9.1 x 9.1 mm

5SMY 12H1280. IGBT-Die V CE = 1200 V I C = 57 A. Die size: 9.1 x 9.1 mm V CE = 12 V I C = 57 A IGBT-Die 5SMY 12H128 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 132-4 12 14 Ultra low loss thin IGBT die Highly rugged SPT + design Large bondable emitter area Passivation : Silicon Nitride

More information

SKP15N60 SKW15N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

SKP15N60 SKW15N60. Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Fast IGBT in NPTtechnology with soft, fast recovery antiparallel Emitter Controlled Diode 75% lower E off compared to previous generation combined with low conduction losses Short circuit withstand time

More information

IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9968 IRGPB6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power

More information

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both

More information

10 23, 24 21, 22 19, , 14

10 23, 24 21, 22 19, , 14 MWI -T7T Six-Pack Trench IGBT = S = (sat) typ. = 1.7 Part name (Marking on product) MWI -T7T, 1, 1 1 9 17 NTC 1 3, 1, 19, E773 1 3 7 11 Pin configuration see outlines. 7, 13, 1 Features: Trench IGBT technology

More information

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

IKW50N60TA q. Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKW50N60TA q. Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Features: Automotive AEC Q101 ualified Designed for DC/AC converters

More information

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.

More information

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode C G E Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive

More information