Low Power CMOS Rectifier and Chien Search Design for RFID Tags

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1 University of Windsor nd M.A.Sc. Seminar : Low Power CMOS ectifier and Chien Search Design for FID Tags Presented by: Shu-Yi (Jack) Wong 1

2 Introduction In noisy automotive environment, adio Frequency IDentification tags may implement intelligent sensor, which also require extended operating range We need robust error correction on the tag and a highly efficient rectifier for power BCH code is proven robust and Chien Search is a key part of BCH decoder How about differential bridge rectifier?

3 Overview of The Seminar System overview 5 slides for Chien search, which is a key part of my initial research effort Introducing differential bridge rectifier How to get the highest power efficiency? Matching for maximum power transfer? Parasitic effects and conclusion 3

4 Oscillator 4 System Overview

5 Chien Search and My Contributions Chien search is a popular VLSI circuit for the last decoding step of BCH (Bose- Chaudhuri-Hocquenghem) code, which also consumes the most power Proposed a new design strategy for 34% power savings of the circuit A paper [1] is published in ISLPED 09 A journal version is accepted by TVLSI 5

6 α α α σ1 LL α α t σ σ t The conventional Chien Search (solid line) and the Polynomial Order eduction (dotted line) 6

7 Last error-bit nd error-bit 1 st error-bit LSB MSB Existing Method: [7] Full power: 8 bit-time Zero power: bit-time } Average power = 10 = 0. 8 Proposed Method: Full power: 3 bit-time /3 power: 3 bit-time 1/3 power: bit-time Zero power: bit-time }Average power = = = =

8 Our technique is by first making the constant finite-field multipliers (CGFMs) and registers redundant, through Polynomial Order eduction (PO) before disabling them via clock gating On average, for a (n, k, t) BCH code and η = idle/active power for the register, the savings becomes: S prop 1 6n 3n + t For PO, with u being the highest order of Λ(), we proved that: t t u ' w = λ λ= w+ 1 1 η () (1) 8

9 Double the power savings of [] at t=9 With respect to the conventional circuit, area increase by only 4%, comparing to 106% of the parallel circuit solution [3] 9

10 Prior Work for UHF ectifier Many recent work focus on reducing the turn on threshold voltage of transistor in the Dickson Multiplier topology These are such as the External V-th Cancellation method (EVC) [9], the Internal V-th (IVC) [8], Self V-th (SVC) [10] and the Zero V-th transistor (ZVT) [5] The maximum Power Conversion Efficiency achieved to date is 37% 10

11 Prior Work for UHF ectifier.. [5] identifies leakage as a PCE bottleneck; power optimization that of output voltage It is commonly assumed that PCE rises with input voltage [6], and [7] proposed boosting the antenna voltage with L-match There is an upper limit in voltage boosting due to bandwidth reduction with increasing Q and [6] proposed higher order matching network for maximizing bandwidth 11

12 CMOS Differential Bridge ectifier Implemented in [6] with only PCE of 3% Its high PCE potential is rediscovered in 008 [4]; reported experimental PCE of 66% at input power level of -1dBm However, there is no model to support it and it is also not known how a design can be scaled for other load conditions; [4] implies that high PCE is only achievable with high resistance load 1

13 Main Contributions A complete 4-D DC analysis of differential bridge rectifier is done with MATLAB, using SPICE model data; The resulting PCE contour shows that there exists a maximum achievable PCE, regardless of the loading, and there is an optimal transistor sizes combination for a given tag distance A new design scaling strategy for optimal PCE for all possible loading conditions An optimal power matching strategy for non-linear load A 3-stages rectifier with simulated PCE of 73% and power utilization of 68% at 10m for 915MHz & P EIP =4W 13

14 CMOS Differential Half-Bridge 915MHz F input from antenna AC W=8.3µm L=0.1µm 1.pF MIM Capacitor Operation is rather self explanatory; so, we shall focus only on a few salient pros to the Dickson types Input voltage goes fully across Vgs No charging cycle W=3.6µm L=0.1µm Parasitic current flows through output 14

15 CMOS Differential Half-Bridge.. A more detail investigation reveals that when V in V out, the current flows from top to bottom; under this condition, V in =V gsp =V gsn and V in -V out =V dsn +V dsp,therefore: [V dsp, V dsn ]<V in -V out. If we set V out V thp, the transistors will turn on in triode mode with small on-resistance!! During turnoff when V in <V out, the conditions are more complicated but we can at least notice that V gsn =V out +V dsp, V gsp =V in -V dsp, which are decreasing quantities unlike those of the diode-connected FETs used in the Dickson types, which stays constant The decreasing Vgs offers a much better turn off 15

16 Six egions of Conduction Showing here is a sample current waveform in response to one half cycle of a sinusoidal input egion 3: N-FET: Triode P-FET: Saturation egion 1: N/P-FET: Triode egion : N/P-FET: Triode egion 4: N/P-FET: Saturation egion 5: N/P-FET: Sub-threshold egion 6: N/P-FET: everse Analysing details of the reverse conduction regions is vital for the understanding of PCE 16

17 4-D DC Analysis The reverse regions are generally too complicated for analytical solution To discover all possible PCE with any transistor combination, we chose to analyse four parameter dimensions PCE, V out, g (β p /β n ) and δ (V out /V in ) This is more than Cadence Spectre can handle, so we wrote a program in MATLAB for the computation 17

18 3-D PCE contours Maximum PCE occurs at an unique point 18

19 Consequence of Body Effect Maximum PCE simply shifts to a different point Contrary to common assumption, PCE does not decrease but increase!! 19

20 Operating with Low V out Setting V out below V thp, the threshold voltage of P-type transistor, reduces forward current to a size comparable with the reverse current, resulting in low PCE 0

21 The 4-th Dimension and Summary By varying δ, we get a series of different 3-D contours A flat contour corresponds to low δ value and low PCE Higher δ values will yield higher PCEs until a point of diminishing return, where the absolute maximum PCE is located; the relative position of max PCE remains static Maximum PCE occurs when V out is slightly above V thp When V thp is much larger than V thn, increasing the relative size of P-type transistor increases PCE Given the same δ, higher V sb improves PCE When V out is below or much above V thp, low PCE results Actual PCE will be smaller due to neglected AC effects 1

22 An Approximated Model Peak current is 10% lower with the fixed resistor model An example for: δ=0.77 W p =31.35µm g =1.4 V out =0.33V V thp=0.785v V thn =0.806V This produces an average current of.4µa. A resistor that produces the same current has a value of 579.4Ω When correctly biased for optimal PCE, the on-region of the transistors behave resistively; could we actually replace it with a fixed value resistor?

23 Only less than 3% error in region 1 But 69% error in the reverse region A fixed resistor can sufficiently model region 1 Since the reverse region loss should be proportional to the forward region loss, we can account for the discrepancy by introducing an equivalent loss resistor 3

24 I in V in DC V drop I loss I eff V out Assuming a sinusoidal input source, the circuit starts conducting when V in sin(ωt)>v thp If we further assume that δ=v out /V in &χ=v thp /V out We can show that the average output current I o : I o = Vin π 1 ( χδ ) πδ δ sin ( χδ ) (3) 1 + We can further derive PCE as follows: PCE = δ δ π 1 sin 1 1 ( χδ ) π + sin ( χδ ) ( χδ ) + δ ( χ ) 1 ( χδ ) + π loss (4) 4

25 An example for: δ=0.77 W p =40.µm G =0.6 V out =0.33V V thp =0.3117V V thn =0.37V I o =33.63µA PCE=73.33% Effective = 84.8Ω loss =135.7KΩ Our model matches the simulated result quite closely up to the maximum PCE of 73.33% The model deviates after that point because of the dominance of reverse leakage components 5

26 Matching to Non-Linear Load The 4-D PCE contour analysis yields area normalized results, we can scale the transistors for the desired operating current without affecting PCE Our model equations are useful for generating and loss, such that the non-linear rectifier circuit is converted to a piece-wise linear system Now, how to match our rectifier to an antenna becomes the issue; prior work assumes a linear model, which is only valid when PCE is low [6] But how does it apply to a piece-wise linear system? 6

27 r + loss loss U 0 sin ( ωt) We may model the antenna and the matching network as an AC signal with an amplitude of U 0 and an effective radiative impedance of r ; we may further define k and σ as the following V ( r out k = 1 + r + loss ) (5) σ = = (6) loss U 0 r // loss r loss 7

28 If P r is the available power to V out, we show that: The first term is the available power from the antenna, it is related to the distance from reader by Friis equation ( ) ( ) ( ) ) (7 sin = π χ χ π σ k k k k k U P r loss loss r r (8) 0 G P U P EIP = = λ (9) G P U λ = wavelength So, we can define a power utilization factor PU as: 8 (8) G r P EIP r a = = π λ π (9) 0 r P EIP G r U π λ = Antenna gain ( ) ( ) ( ) ) (10 sin = = π χ χ π σ k k k k k P P PU r loss loss a r

29 PU is a function of k and χ, (assuming loss, and σ are known values), differentiating PU(k) lead to: dpu dk ( k) = 1 1 ( χk) + k sin ( χk) kπ + ( 1 χ ) ( χk) maximum power utilization can be founded by setting the equation to zero and then solving it For the special case when χ=1, maximum PU for a fullwave bridge rectifier occurs when k=0.394 at a value of 0.96 χk 1 (11) Therefore, maximum available power to the rectifier s output does not equal P a, but 0.96P a and it does not occur when V out of each stage is equal to half of the input voltage but: loss Vout = U 0 (1) loss + r 9

30 Design of Multistage ectifier AC V in(eff) ½C c C c Cc + C p V in ( eff ) AC ½C c +C p C p V out V out There is a parasitic capacitance C p across the load And we need coupling capacitor C c for multistage 30

31 Simple impedance calculation cannot be directly applied as the switching introduces discontinuity However, this is nothing more than Laplace transform with some initial conditions at the point of switching; the current through V out is shown to be: i( t) Where: = K sin( ωt + θ + α ) + K 1 = ωcω C K e V t ( + ) C c C p c 1 4 [ ( )] in ( eff + ω Cc + C p ) (14) (13) π α = tan 1 ( ) ω C c C + p (15) θ = sin 1 ( V V )( C + C ) thp V in c ( eff ) c C c p (16) K = V V K sin 1 thp out 1 α ( θ + ) (17) 31

32 There is charge loss through the equivalent capacitor during the switching that occurs on every cycle, these charge loss caused a voltage drop V dt Iload ( total ) Vdt = (18) f C + C ( ) c For fullwave rectifier, during steady state, the initial voltage at the capacitor becomes: V V c = dt Which means although there is a voltage drop, the initial DC offset keeps the amplitude of the signal seen by and V out almost exactly the same before and after switching; there is only a phase shift involved p (19) 3

33 The current through C c can be found from i(t), which could then be used for determining the effective V out The effective can be calculated by recognizing the tapcapacitor matching circuit 1+ Q 1+ Q = ( // ) (0) Q = ωc ( // ) (1) eff loss Q = 1 C c 1+ Q // Q 1 p loss // 1+ Q loss C p ω () The reactive current due to C c and C p can be cancelled with an in-parallel inductor; the low Q due to the polysilicon gates can be relieved by multiple fingers Finally, we need to determine the required r 33

34 It can be shown that: ( 1 ) k δ σ = δ k (3) (4) Typically, low cost antenna has simple design with low impedance, such as dipole antenna with an impedance of 73Ω; L-match may be used to convert 73Ω to r r = σ eff loss loss eff 73Ω C c AC Antenna Q L = r 73 1 L compensate C p C c Maximum power utilization rules imply that effective V out for each stage should be the same 34

35 Since V out also fixes U 0, it implies maximum PU only at one distance. eversely speaking, it means that, for any given distance, there exists an optimal transistor size With these design rules, we came up with a 3-stages fullwave differential bridge rectifier circuit, results follows: r(m) Pa (µw) Pa (dbm) PU PCE Io (µa)

36 Conclusions Developed a complete design methodology for differential bridge rectifier Shown that a different optimal power transfer equation applies to this rectifier Shown that there is an optimal transistor size for a target distance And that body-effect and high output current will not necessarily degrade PCE Simulated a design with PCE of 73% & PU of 67% at 10m and P EIP of 4W 36

37 eference 1. S.Wong, C.Chen, Q.M.J. Wu, Power-Management-Based Chien Search for Low Power BCH Decoder, International Symposium on Low Power Electronics and Design, 009, ISLPED 009, Aug 19-1, 009. Y. Wu, Low power decoding of BCH codes, IEEE International Symposium on Circuits and Systems, ISCAS 004, vol., May 004, pp. II A. aghupathy and K. J.. Liu, Algorithm-based low-power/high-speed eed-solomon decoder design, IEEE Trans. on Circuits and Systems II: Analog and Digital Signal Processing, vol. 47, no. 11, Nov. 000, pp A. Sasaki, K. Kotani, T. Ito, Differential-Drive CMOS ectifier for UHF FIDs with 66% PCE at -1dBm Input, IEEE Asian Solid-State Circuits Conference, 008, A_SSCC 08, 3-5 Nov, 008, pp J. Yi, W. Ki, C. Tsui, Analysis and Design Strategy of UHF Micro-Power CMOS ectifiers for Micro-Sensor and FID Applications, IEEE Trans. on Circuits and Systems-I: egular Papers, Vol. 54, No.1, January 007, pp

38 6. S. Mandal,. Sarpeshkar, Low-Power CMOS ectifier Design for FID Applications, IEEE Trans. on Circuits and Systems-I:egular Papers, Vol. 54, No.6, June 007, pp A. Shameli, A. Safarian, A. ofougaran, et al., Power Harvester Design for Passive UHF FID Tag Using a Voltage Boosting Technique, IEEE Trans. on Microwave Theory and Techniques, Vol. 55, Issue 6, Part 1, June 007, pp H. Nakamoto, D. Yamazaki, T. Yamamoto, H. Kurata, S. Yamada, K. Mukaida et al., A Passive UHF F Identification CMOS Tag IC Using Ferroelectric AM in 0.35-µm Technology, IEEE Journal of Solid-State Circuits, Vol. 4, No.1, January 007, pp T. Umeda, H. Yoshida, S. Sekine, Y.Fujita, et al., A 950-MHz ectifier Circuit for Sensor Network Tags With 10-m Distance, IEEE Journal of Solid-State Circuits, Vol. 41, No. 1, January 006, pp K. Kotani, T. Ito, High Efficiency CMOS ectifier Circuit with Self-Vth- Cancellation and Power egulation Functions for UHF FIDs, IEEE Asian Solid-State Circuits Conference 007, ASSCC 07, Nov. 07, pp C. Ma, C. Zhang, Z. Wang, Power Analysis for the MOS AC/DC ectifier of Passive FID Transponders, IEEE Asia Pacific Conference on Circuits and Systems 006, APCCAS 006, Dec. 06, pp

39 Endorsements These work were funded by the AUTO1 Network of Centres of Excellence, Canada 39

40 Questions? 40

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