Homework Assignment 08


 Charla Barker
 4 years ago
 Views:
Transcription
1 Homework Assignment 08 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance large voltage gain 2. In the circuit below I C = 1 ma and all the capacitors are large enough to be considered shorts. Estimate the midband gain A v = v o v i (3 points) (a) 6.8 (b) 3.4 (c) 272 (d) 136 (e) 12.1 Answer: (d) 3. In the circuit below I C = 1 ma and all the capacitors are large enough to be considered shorts. Estimate the midband gain A v = v o v i (3 points) (a) 12.1 (b) 8 (c) = 272 (d) 136 (e) 6.1 Answer: A v (R L R C ) 560 = = 6.07, so (e). 1
2 4. In the circuit below I C = 1 ma and all the capacitors are large enough to be considered shorts. Estimate the midband gain A v = v o v i. (a) 6.8 (b) 3.4 (c) g m R C 0.04R C = 272 (d) Need additional information Answer: (b) 5. Sketch an npn BJT Darlington pair. 6. Sketch a twotransistor configuration using npn and pnp BJTs that is equivalent to a single pnp BJT. 7. True or false: the β of a transistor decreases with decreasing temperature. Answer: True, it decreases with decreasing temperature. 2
3 8. True or false: the β of a transistor is a function of temperature, but essentially independent of collector current. Answer: False 9. True or false: consider a BJT in the CE configuration, biased at I C = 1 ma. The smallsignal input resistance r π is in the order of 500K Answer: False. r π = β g m = β (40I C ). With β = 100, r π = 2.5K 10. True or false: consider a BJT in the CE configuration, biased at I C = 1 ma. The smallsignal input resistance r π is in the order of 500K. Answer: False. r π = β g m = β (40I C ). With β = 100, r π = 2.5K 11. Give one phrase/sentence that describes the primary advantage of an active load. Answer: Large effective resistance large voltage gain 12. Estimate the voltage gain of the amplifier below if I CQ = 6.3 ma, β = 200, and C C. (a) 10 (b) 10 (c) 252 (d) 252 Answer: A v R C R E = 10, so (a). 3
4 13. Estimate the input resistance R i of the amplifier below if I CQ = 6.3 ma, β = 200, r π 800Ω, and C C. (3 point) (a) 17.35K (b) 18.15K (c) 37.35K (d) 9.46K Answer: Using BJT scaling, R i = 22K 82K (r π + (1 + β)r E ) = 22K 82K (r π + (1 + β)r E ) = 9.46K, so (d) 14. Consider the Bode plot of a 1 st order RC network. What is the attenuation of the network at f = 60 Hz? Provide your answer in db. (3 points) Answer: 60 Hz is log(60 2.5) = 1.38 decades higher than the 2.5 Hz corner frequency. The attenuation increases by 20 db per decade, so that at 60 Hz v o v i (in db) is = 31.1 db. The attenuation is 31.1 db. An alternate calculation is log 1 + (60 2.5) 2 = 3.11 db. 4
5 15. Assume the input voltage is a 1V step function u(t). What is the longterm value of v o (t)? That is, what is v o (t) for t? Answer: In the steady state (t ), the capacitor has no effect on the circuit. The resistors form a voltage divider and v o ( ) = v s (R L (R L + R S )) = 0.5 V 16. Consider the current mirror below, and neglect base currents. What is I copy? Answer: I copy = 0.25 ma 3 = 83 μa 17. In the current mirrors below, neglect base currents and take I REF = 30 μa, What is I copy3? (a) 30 μa (b) 30 μa 3 = 10 μa (c) 30 μa 4 = 7.5 μa Answer: (a) 18. In the current mirrors below, neglect base currents and I REF = 10 μa, What is I copy? Answer: 30 μa 5
6 19. In the current mirrors below, neglect the base currents. What is I REF? Answer: 0.25 ma 20. True or false: the β of a transistor decreases with decreasing temperature. Answer: True, it decreases with decreasing temperature. 21. True or false: the β of a transistor is a function of temperature, but essentially independent of collector current. Answer: False 22. True or false: consider a BJT in the CE configuration, biased at I C = 1 ma. The smallsignal input resistance r π is in the order of 500K (2 points) Answer: False. r π = β g m = β (40I C ). With β = 100, r π = 2.5K 23. True or false: The input resistance of a BJT amplifier in the CB configuration, biased at 1 ma is about 25 Ω Answer: True 24. A singlepole opamp has an openloop lowfrequency gain of A = 10 5 and an open loop, 3dB frequency of 4 Hz. If an inverting amplifier with closedloop lowfrequency gain of A f = 50 uses this opamp, determine the closedloop bandwidth. (2 points) Answer: The gainbandwidth product is Hz. The bandwidth of the closedloop amplifier is then is /50 = 8 khz. 6
7 25. A singlepole opamp has an openloop gain of 100 db and a unitygain bandwidth frequency of 2 MHz. What is the openloop bandwidth of the opamp? (2 points) Answer. A gain of 100 db corresponds to 10 5 and the gainbandwidth product is 2 MHz. Thus, the openloop bandwidth is (2 MHz) 10 5 = 20 Hz 26. A singlepole opamp has an openloop gain of 100 db and a unitygain bandwidth frequency 5 MHz. What is the openloop bandwidth of the amplifier? The amplifier is used as a voltage follower. What is the bandwidth of the follower? Answer: A gain of 100 db corresponds to 10 5 and the gainbandwidth product is 5 MHz. Thus, the openloop bandwidth is (5 MHz) 10 5 = 50 Hz. A unity follower will have a bandwidth of 5 MHz. 27. Consider a firstorder RC lowpass filter with 3dB frequency f = 60 Hz. By how much does it delay a 50 Hz sine wave? Express you answer in ms. (3 points) Answer: The phase shift at 60 Hz is 45 and increases at 45 / decade. 50 Hz is log(50 60) = 0.08 decades higher than 60 Hz. (The negative sign implies 50 Hz is 0.08 decades before 60 Hz.) Thus, the phase shift is = The period of a 50 Hz sine wave is 20 ms, so the delay is (20)( ) = 2.3 ms An alternate and more accurate calculation for the phase is tan 1 (50 60) = 39.8 and delay of 2.2 ms. 7
8 Question 2 Consider the circuit below. The duty cycle and frequency of the 555 astable is 60% and 10 khz respectively. (a) Specify a value for R limit to ensure that the average current through the IR diode does not exceed 30 ma (4 points) (b) Explain (2 sentences maximum) the purpose of the decoupling capacitor (1 point) (c) Give a reasonable value for the decoupling capacitor (1 point) (d) If the frequencysetting capacitor is 0.1 μf, what should R A and R B be? Specify E24 series standard resistors. (4 points) (e) What are the frequency and duty cycle with the standard resistors? (2 points) Part (a) The peak current must be I peak = 30 (0.6) = 50 ma. This value will give an average of 30 ma with a 60% on time. Assuming the V BE(ON) = 0.7 V for the BJT, then R limit = = 14 Ω. Choose the closest standard value of 15 Ω. Part (b) When the FET switches, large current spikes may appear on the supply rail, which can propagate into the IC and disturb its operation. The decoupling capacitor provides a local reservoir of energy, and ensures a clean power supply rail. Part (c) A good first try would be 0.1 μf. Part (d) Calculated (using an online applet) values are R A = 288 Ω, R B = 576 Ω with closest standard values 300 Ω and 560 Ω respectively. Part (e) With standard values, f = 10.1 khz, and D = 60.6 %. 8
9 Question 3 The datasheet for a 5 V, threeterminal regulator indicate that the output voltage typically changes by 3 mv when the input voltage is varied from 7 V to 25 V, and by 5 mv when the load current is varied from 0.25 A to 0.75 A. Further, the ripple rejection ratio is 78 db at 120 Hz. (a) Estimate the typical line and load regulation for the regulator. (4 points) (b) What is the output resistance of the regulator? (2 points) (c) Estimate the output ripple amplitude for every volt of input ripple at 120 Hz. (3 points) Part(a) Line Regulation = ΔV O 100% = % = 0.017% ΔV I (25 7) Load Regulation = V O(NL) V O(FL) V O(NL) 100 = = 0.1% Part (b) Output Resistance = ΔV O = = 10 mω ΔI O ( ) Part (c) Ripple Rejection (db) = 20 log 10 V RI V RO = 78 V RO = ( )V RI Thus, a 1V, 120Hz ripple at the input will result in an output ripple of mv 9
10 Question 4 An nchannel MOSFET with V TN = 1 V, K n = 0.8 ma/v 2 is biased to operate in its saturation region with I D = 1 ma. Determine the transconductance g m. (3 points) If v GS changes with 1 mv, by how does the drain current change? (3 points) g m = 2 K n I D = 2 ( )( ) = A/V = 1.78 ma/v i d = g m v gs = ( )( ) = 1.78 μa Question 5 For the circuit shown, V PS = 5 V and = 10K. The varactor characteristics are shown in the graph. What is the bandwidth of the circuit? (3 points) From the graph, the varactor has a capacitance of 100 pf with a 5V reverse voltage. The timeconstant of the circuit is τ = RC = ( )( ) = 1 μs. The bandwidth is then B = 1 (2πτ) = 159 khz. 10
11 Question 6 K n = 93 ma V 2 V TN = 2 V λ = 0 C S = 100 μf C C = 1 μf (a) Find I DQ for the circuit (6 points) (b) Determine g m (2 points) (c) Determine the voltage gain of the circuit (2 points) Part (a) The gate current is zero, so V G = Further V S = I D R S = K n (V GS V TN ) 2 Thus = 5.39 V V GS = V G V S = 5.39 K n (V GS V TN ) 2 (R S ) V GS = (V GS 2) 2 (100) Solving using trialanderror gives 2.55 V. The drain current is I D = K n (V GS V TN ) 2 = (0.093)(2.55 2) 2 = ma Part (b) g m = 2 K n I D = = A/V. Part (c) The smallsignal model is given below where R G = 100K 56K. From the model the voltage gain is A V = g m ( K) =
12 Question 7 A MOEFET amplifier along with the FET and circuit parameters are shown below. C C1, C C2 are coupling capacitors. Determine the quiescent values for I D and V DS (8 points) K n = 1 ma V 2 V TN = 2 V λ = 0 V DD = 12 V R S = 2K R D = 3K R 1 = 300K R 2 = 200K R Si = 2K R L = 3K The gate current is zero, so V G = = 4.8 V Further V S = I D R S = K n (V GS V TN ) 2 R S Thus Solving yields V GS = 2.96 V. Thus Further, V GS = V G V S = 4.8 K n (V GS V TN ) 2 (R S ) V GS = (V GS 2) 2 (2K) I D = K n (V GS V TN ) 2 = 0.001(2.96 2) 2 = ma V DS = V D V S = 12 I D R D I D R S = = 7.4 V 12
13 Question 8 For the circuit below, show that V GS = 3.55 V. State any assumptions that you make. (8 points) K n = 0.5 ma/v 2, V TN = 2 V, λ = 0, C gd = 0.1 pf, C gs = 1 pf Assume the FET operates in saturation mode. No current flows into gate, so that 166 V G = = 4.15V I D = K n (V GS V TN ) 2 Further, V GS = V G I D R S = 4.15 I D R S, so that I D = 0.5 (4.15 I D R S ) 2 2 ma If V GS = 3.55 V, then I D = K n (V GS V TN ) 2 gives I D = 1.2 ma. Substituting I D = 1.2 ma shows that the right hand side and the left hand is equal so that V GS is indeed 3.55 V 13
14 Question 9 For the circuit below, determine the dc load line equation for the BJT, incorporating β. That is, do not assume that I E I C. (8 points) R C = 5K R E = 5K R L = 5K β = 100 V CC = +12 V V DD = 5 V The load line equation is an equation that expresses I C as a function of V CE. If R L were absent, one would start with, for example: V CC = I C R C + V CE + I E R E + V DD and note that I E = ((1 + β) β)i C, substitute that into the equation above an express I C as a function of V CE. With R L present, one has to take a different approach. The simplest is to replace V CC, R C, and R L with a Thevenin equivalent circuit as shown below. R TH = R L R C = 2.5K V TH = R L V R L + R CC = 6 V C Now V TH = I C R TH + V CE + I E R E + V DD I E = 1 + β β I C = 1.01I C Combining these equations, substituting values, and rearranging, gives 1 I C = (11 V CE) 14
15 Question 10 For the following circuit, assume that the BJT is operating in the forwardactive region. V BE(on) = 0.7 V V A = β = 50 (a) Determine I C (5 points) (b) Determine the power dissipated by the BJT (3 points) Part (a) The voltage at the base is = 8.3 V. KCL at the collector (using the convention that currents into the node is positive) gives I C V C 1K + I B = 0 Using I B = (8.3 V C ) 18K, and I C = 50I B, this equation becomes Solving yields V C = 6.14 V, so that Part (b) V C 18K V C 1K V C 18K = 0 I B = (8.3 V C ) 18K = 0.12 ma I C = 50I B = 6 ma V C = (I B + I C )(1K) = 6.12 V V CE = 9 V C = 2.88 V P = V CE I C = mw 15
16 Question 11 Consider the amplifier below, which amplifies the signal from a sensor with an internal resistance of 1K. Ignore BJT s output resistance, and assume C 1 = C 2 = C 3. β = 100 I C = ma (a) Determine g m, r π (4 points) (b) Using BJT scaling, determine R i see figure (4 points) (c) Using the ratio of the collector and emitter resistors, estimate the overall voltage gain A v = v o v s (4 points) Part (a) Part (b) g m = 40 I C = 9.8 ms, r π = β g m = 10.2 K R i = R 1 R 2 [r π + (1 + β)r E ] = 300K 160K [10.2K K] = 78.3K Part (c) The effective collector resistance is R C = 22K 100K = 18K and the sensor s internal resistance and R i form a voltage divider. Thus A v = v o R i R C = 78.3 v s R S + R i R E K 3K =
17 Question 12 (Principles, Own) An engineer measures the bandwidth of the circuit below by driving it with a sinusoidal signal and measuring the attenuation at various frequencies. She uses a scope with an input impedance of 1 MΩ with a 1 probe, and then a 10 probe. Complete the following table (6 points) True BW in Hz Measured BW in Hz ( 1) probe Measured BW in Hz ( 10) probe This is a simple 1 st order system with bandwidth B = 1 (2πRC). Here R is the equivalent resistance that the capacitor C sees. True bandwidth calculation: the Thevenin equivalent resistance that C sees is simply R 1, so B True = 1 2πRC = 1 2π( )( = 175 Hz ) 1 Probe bandwidth calculation: the probe+scope has a 1M resistance that is effectively in parallel with R 1, so that the Thevenin equivalent resistance that C sees is 1M R 1, so that B 1 probe = 1 2π(R R scope )C = 1 2π( ) ( )( = 334 Hz ) 10 Probe bandwidth calculation: 10 probes increase the 1 MΩ probe+scope resistance to 10 MΩ, so that the Thevenin equivalent resistance that C sees is 10M R 1, so that B 1 probe = 1 2π(R R scope )C = 1 2π( ) ( )( = 191 Hz ) True BW in Hz Measured BW in Hz ( 1) probe Measured B in Hz ( 10) probe 175 Hz 334 Hz 1901 Hz 17
18 Question 13 For the circuit below β = 120, V BE(ON) = 0.7 V, and V A = R 1 = 110 kω R 2 = 82 kω β = 120 V A = V BE(ON ) = 0.7 V (a) Determine I CQ, g m, and r π (8 points) (b) Determine the output resistance R o using BJT scaling (4 points) Part (a) The Thevenin equivalent circuit for the baseemitter bias circuit is R TH = R 1 R 2 = 47K R 2 V TH = 12 = 5.1 V R 1 + R 2 V BE = 0.7 V β = 120 V TH 0.7 I B = = 8.3 μa R TH + (1 + β)r E I C = βi B = 1 ma Part (b) g m = 40 I C = 40 ms, and r π = β g m = 3K Part (c) Using BJT impedance scaling R o = R E r π 1 + β = 4K 3K 25 Ω
19 The table below compares the design values with a SPICE simulation that started with the 2N2222 BJT with the Early voltage and β replaced with VAF = 1G and BF = 120. Parameter Calculated/Design SPICE I CQ 1 ma 1.02 ma V BE 0.7 V V I BQ 8.33 μa 12.5 µa V RE 4 V 3.89 V 19
55:041 Electronic Circuits The University of Iowa Fall Exam 2
Exam 2 Name: Score /60 Question 1 One point unless indicated otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.35 μs. Estimate the 3 db bandwidth of the amplifier.
More informationHomework Assignment 09
Homework Assignment 09 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationFinal Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.
Final Exam Name: Max: 130 Points Question 1 In the circuit shown, the opamp is ideal, except for an input bias current I b = 1 na. Further, R F = 10K, R 1 = 100 Ω and C = 1 μf. The switch is opened at
More information55:041 Electronic Circuits The University of Iowa Fall Final Exam
Final Exam Name: Score Max: 135 Question 1 (1 point unless otherwise noted) a. What is the maximum theoretical efficiency for a classb amplifier? Answer: 78% b. The abbreviation/term ESR is often encountered
More informationECE343 Test 2: Mar 21, :008:00, Closed Book. Name : SOLUTION
ECE343 Test 2: Mar 21, 2012 6:008:00, Closed Book Name : SOLUTION 1. (25 pts) (a) Draw a circuit diagram for a differential amplifier designed under the following constraints: Use only BJTs. (You may
More informationChapter 13 SmallSignal Modeling and Linear Amplification
Chapter 13 SmallSignal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 1/4/12 Chap 131 Chapter Goals Understanding of concepts related to: Transistors
More informationCircle the one best answer for each question. Five points per question.
ID # NAME EE255 EXAM 3 November 8, 2001 Instructor (circle one) Talavage Gray This exam consists of 16 multiple choice questions and one workout problem. Record all answers to the multiple choice questions
More informationEE105 Fall 2014 Microelectronic Devices and Circuits
EE05 Fall 204 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Terminal Gain and I/O Resistances of BJT Amplifiers Emitter (CE) Collector (CC) Base (CB)
More informationID # NAME. EE255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom
ID # NAME EE255 EXAM 3 April 7, 1998 Instructor (circle one) Ogborn Lundstrom This exam consists of 20 multiple choice questions. Record all answers on this page, but you must turn in the entire exam.
More informationECE342 Test 3: Nov 30, :008:00, Closed Book. Name : Solution
ECE342 Test 3: Nov 30, 2010 6:008:00, Closed Book Name : Solution All solutions must provide units as appropriate. Unless otherwise stated, assume T = 300 K. 1. (25 pts) Consider the amplifier shown
More informationHomework Assignment 11
Homework Assignment Question State and then explain in 2 3 sentences, the advantage of switched capacitor filters compared to continuoustime active filters. (3 points) Continuous time filters use resistors
More informationChapter 2  DC Biasing  BJTs
Objectives Chapter 2  DC Biasing  BJTs To Understand: Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationAssignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.
Page 1 of 3 ELEC 312: ELECTRONICS II : ASSIGNMENT3 Department of Electrical and Computer Engineering Winter 2012 1. A commonemitter amplifier that can be represented by the following equivalent circuit,
More informationBipolar junction transistors
Bipolar junction transistors Find parameters of te BJT in CE configuration at BQ 40 µa and CBQ V. nput caracteristic B / µa 40 0 00 80 60 40 0 0 0, 0,5 0,3 0,35 0,4 BE / V Output caracteristics C / ma
More informationBiasing the CE Amplifier
Biasing the CE Amplifier Graphical approach: plot I C as a function of the DC baseemitter voltage (note: normally plot vs. base current, so we must return to EbersMoll): I C I S e V BE V th I S e V th
More informationMICROELECTRONIC CIRCUIT DESIGN Second Edition
MICROELECTRONIC CIRCUIT DESIGN Second Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 10/23/06 Chapter 1 1.3 1.52 years, 5.06 years 1.5 2.00 years, 6.65 years 1.8 113
More informationMicroelectronic Circuit Design 4th Edition Errata  Updated 4/4/14
Chapter Text # Inside back cover: Triode region equation should not be squared! i D = K n v GS "V TN " v & DS % ( v DS $ 2 ' Page 49, first exercise, second answer: 1.35 x 10 6 cm/s Page 58, last exercise,
More informationDelhi Noida Bhopal Hyderabad Jaipur Lucknow Indore Pune Bhubaneswar Kolkata Patna Web: Ph:
Serial : ND_EE_NW_Analog Electronics_05088 Delhi Noida Bhopal Hyderabad Jaipur Lucknow ndore Pune Bhubaneswar Kolkata Patna Web: Email: info@madeeasy.in Ph: 04546 CLASS TEST 089 ELECTCAL ENGNEENG Subject
More informationElectronic Circuits Summary
Electronic Circuits Summary Andreas Biri, DITET 6.06.4 Constants (@300K) ε 0 = 8.854 0 F m m 0 = 9. 0 3 kg k =.38 0 3 J K = 8.67 0 5 ev/k kt q = 0.059 V, q kt = 38.6, kt = 5.9 mev V Small Signal Equivalent
More informationDC Biasing. Dr. U. Sezen & Dr. D. Gökçen (Hacettepe Uni.) ELE230 Electronics I 15Mar / 59
Contents Three States of Operation BJT DC Analysis FixedBias Circuit EmitterStabilized Bias Circuit Voltage Divider Bias Circuit DC Bias with Voltage Feedback Various Dierent Bias Circuits pnp Transistors
More informationECE343 Test 1: Feb 10, :008:00pm, Closed Book. Name : SOLUTION
ECE343 Test : Feb 0, 00 6:008:00pm, Closed Book Name : SOLUTION C Depl = C J0 + V R /V o ) m C Diff = τ F g m ω T = g m C µ + C π ω T = g m I / D C GD + C or V OV GS b = τ i τ i = R i C i ω H b Z = Z
More informationVI. Transistor amplifiers: Biasing and Small Signal Model
VI. Transistor amplifiers: iasing and Small Signal Model 6.1 Introduction Transistor amplifiers utilizing JT or FET are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly.
More informationElectronics II. Midterm II
The University of Toledo f4ms_elct7.fm  Section Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo f4ms_elct7.fm  Problem 7 points Given in
More informationUniversity of Toronto. Final Exam
University of Toronto Final Exam Date  Dec 16, 013 Duration:.5 hrs ECE331 Electronic Circuits Lecturer  D. Johns ANSWER QUESTIONS ON THESE SHEETS USING BACKS IF NECESSARY 1. Equation sheet is on last
More informationECE 3050A, Spring 2004 Page 1. FINAL EXAMINATION  SOLUTIONS (Average score = 78/100) R 2 = R 1 =
ECE 3050A, Spring 2004 Page Problem (20 points This problem must be attempted) The simplified schematic of a feedback amplifier is shown. Assume that all transistors are matched and g m ma/v and r ds.
More information1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)
HW 3 1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp) a) Obtain in Spice the transistor curves given on the course web page except do in separate plots, one for the npn
More informationCE/CS Amplifier Response at High Frequencies
.. CE/CS Amplifier Response at High Frequencies INEL 4202  Manuel Toledo August 20, 2012 INEL 4202  Manuel Toledo CE/CS High Frequency Analysis 1/ 24 Outline.1 High Frequency Models.2 Simplified Method.3
More informationElectronic Circuits 1. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: Transistor devices
Electronic Circuits 1 Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Threeterminal device whose voltagecurrent relationship is controlled by a third voltage
More informationChapter 2.  DC Biasing  BJTs
Chapter 2.  DC Biasing  BJTs Objectives To Understand : Concept of Operating point and stability Analyzing Various biasing circuits and their comparison with respect to stability BJT A Review Invented
More informationBipolar Junction Transistor (BJT)  Introduction
Bipolar Junction Transistor (BJT)  Introduction It was found in 1948 at the Bell Telephone Laboratories. It is a three terminal device and has three semiconductor regions. It can be used in signal amplification
More informationCARLETON UNIVERSITY. FINAL EXAMINATION December DURATION 3 HOURS No. of Students 130
ALETON UNIVESITY FINAL EXAMINATION December 005 DUATION 3 HOUS No. of Students 130 Department Name & ourse Number: Electronics ELE 3509 ourse Instructor(s): Prof. John W. M. ogers and alvin Plett AUTHOIZED
More information6.012 Electronic Devices and Circuits Spring 2005
6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) OPEN BOOK Problem NAME RECITATION TIME 1 2 3 4 5 Total General guidelines (please read carefully before starting):
More informationLecture 37: Frequency response. Context
EECS 05 Spring 004, Lecture 37 Lecture 37: Frequency response Prof J. S. Smith EECS 05 Spring 004, Lecture 37 Context We will figure out more of the design parameters for the amplifier we looked at in
More information3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti
Inverter with active load It is the simplest gain stage. The dc gain is given by the slope of the transfer characteristics. Small signal analysis C = C gs + C gs,ov C 2 = C gd + C gd,ov + C 3 = C db +
More informationElectronics II. Final Examination
The University of Toledo f17fs_elct27.fm 1 Electronics II Final Examination Problems Points 1. 11 2. 14 3. 15 Total 40 Was the exam fair? yes no The University of Toledo f17fs_elct27.fm 2 Problem 1 11
More informationCHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE
CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE To understand Decibels, log scale, general frequency considerations of an amplifier. low frequency analysis  Bode plot low frequency response BJT amplifier Miller
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationESE319 Introduction to Microelectronics. BJT Biasing Cont.
BJT Biasing Cont. Biasing for DC Operating Point Stability BJT Bias Using Emitter Negative Feedback Single Supply BJT Bias Scheme Constant Current BJT Bias Scheme Rule of Thumb BJT Bias Design 1 Simple
More informationAdvanced Current Mirrors and Opamps
Advanced Current Mirrors and Opamps David Johns and Ken Martin (johns@eecg.toronto.edu) (martin@eecg.toronto.edu) slide 1 of 26 WideSwing Current Mirrors I bias I V I in out out = I in V W L bias 
More informationECE3050 Assignment 7
ECE3050 Assignment 7. Sketch and label the Bode magnitude and phase plots for the transfer functions given. Use loglog scales for the magnitude plots and linearlog scales for the phase plots. On the magnitude
More informationI. Frequency Response of Voltage Amplifiers
I. Frequency Response of Voltage Amplifiers A. CommonEmitter Amplifier: V i SUP i OUT R S V BIAS R L v OUT V Operating Point analysis: 0, R s 0, r o >, r oc >, R L > Find V BIAS such that I C
More informationECE 546 Lecture 11 MOS Amplifiers
ECE 546 Lecture MOS Amplifiers Spring 208 Jose E. SchuttAine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine Amplifiers Definitions Used to increase
More informationRefinements to Incremental Transistor Model
Refinements to Incremental Transistor Model This section presents modifications to the incremental models that account for nonideal transistor behavior Incremental output port resistance Incremental changes
More informationEE 230 Lecture 31. THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR
EE 23 Lecture 3 THE MOS TRANSISTOR Model Simplifcations THE Bipolar Junction TRANSISTOR Quiz 3 Determine I X. Assume W=u, L=2u, V T =V, uc OX =  4 A/V 2, λ= And the number is? 3 8 5 2? 6 4 9 7 Quiz 3
More informationCapacitors Diodes Transistors. PC200 Lectures. Terry Sturtevant. Wilfrid Laurier University. June 4, 2009
Wilfrid Laurier University June 4, 2009 Capacitor an electronic device which consists of two conductive plates separated by an insulator Capacitor an electronic device which consists of two conductive
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU  Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II ) Most of the content is from the textbook: Electronic devices and circuit theory,
More informationEE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE05 Fall 205 Microelectronic Devices and Circuits Frequency Response Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH) Amplifier Frequency Response: Lower and Upper Cutoff Frequency Midband
More informationEE 321 Analog Electronics, Fall 2013 Homework #8 solution
EE 321 Analog Electronics, Fall 2013 Homework #8 solution 5.110. The following table summarizes some of the basic attributes of a number of BJTs of different types, operating as amplifiers under various
More informationESE319 Introduction to Microelectronics. Output Stages
Output Stages Power amplifier classification Class A amplifier circuits Class A Power conversion efficiency Class B amplifier circuits Class B Power conversion efficiency Class AB amplifier circuits Class
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationGeneral Purpose Transistors
General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 33/SC which is designed for low power surface mount
More informationCHAPTER 7  CD COMPANION
Chapter 7  CD companion 1 CHAPTER 7  CD COMPANION CD7.2 Biasing of SingleStage Amplifiers This companion section to the text contains detailed treatments of biasing circuits for both bipolar and fieldeffect
More informationIFB270 Advanced Electronic Circuits
IFB270 Advanced Electronic Circuits Chapter 0: Ampliier requency response Pro. Manar Mohaisen Department o EEC Engineering Review o the Precedent Lecture Reviewed o the JFET and MOSFET Explained and analyzed
More informationEE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits
EE 330 Lecture 22 Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits Exam 2 Friday March 9 Exam 3 Friday April 13 Review Session for Exam 2: 6:00
More information5. EXPERIMENT 5. JFET NOISE MEASURE MENTS
5. EXPERIMENT 5. JFET NOISE MEASURE MENTS 5.1 Object The objects of this experiment are to measure the spectral density of the noise current output of a JFET, to compare the measured spectral density
More informationESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model
Bode Plot Review High Frequency BJT Model 1 Logarithmic Frequency Response Plots (Bode Plots) Generic form of frequency response rational polynomial, where we substitute jω for s: H s=k sm a m 1 s m 1
More informationChargeStorage Elements: BaseCharging Capacitance C b
ChargeStorage Elements: BaseCharging Capacitance C b * Minority electrons are stored in the base  this charge q NB is a function of the baseemitter voltage * base is still neutral... majority carriers
More informationChapter 10 Feedback. PART C: Stability and Compensation
1 Chapter 10 Feedback PART C: Stability and Compensation Example: Noninverting Amplifier We are analyzing the two circuits (nmos diff pair or pmos diff pair) to realize this symbol: either of the circuits
More informationENGN3227 Analogue Electronics. Problem Sets V1.0. Dr. Salman Durrani
ENGN3227 Analogue Electronics Problem Sets V1.0 Dr. Salman Durrani November 2006 Copyright c 2006 by Salman Durrani. Problem Set List 1. Opamp Circuits 2. Differential Amplifiers 3. Comparator Circuits
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design (1/3, 1/3, 1/3 Rule) Bias Design Example SmallSignal BJT Models SmallSignal Analysis 1 Emitter Feedback Bias Design R B R C V CC R 1 R
More informationSolved Problems. Electric Circuits & Components. 11 Write the KVL equation for the circuit shown.
Solved Problems Electric Circuits & Components 11 Write the KVL equation for the circuit shown. 12 Write the KCL equation for the principal node shown. 12A In the DC circuit given in Fig. 1, find (i)
More informationDEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:
UNIT VII IASING & STAILIZATION AMPLIFIE:  A circuit that increases the amplitude of given signal is an amplifier  Small ac signal applied to an amplifier is obtained as large a.c. signal of same frequency
More informationRIB. ELECTRICAL ENGINEERING Analog Electronics. 8 Electrical Engineering RIBR T7. Detailed Explanations. Rank Improvement Batch ANSWERS.
8 Electrical Engineering RIBR T7 Session 089 S.No. : 9078_LS RIB Rank Improvement Batch ELECTRICL ENGINEERING nalog Electronics NSWERS. (d) 7. (a) 3. (c) 9. (a) 5. (d). (d) 8. (c) 4. (c) 0. (c) 6. (b)
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences E. Alon Final EECS 240 Monday, May 19, 2008 SPRING 2008 You should write your results on the exam
More informationLecture 13 MOSFET as an amplifier with an introduction to MOSFET smallsignal model and smallsignal schematics. Lena Peterson
Lecture 13 MOSFET as an amplifier with an introduction to MOSFET smallsignal model and smallsignal schematics Lena Peterson 20151013 Outline (1) Why is the CMOS inverter gain not infinite? Largesignal
More informationSection 1: Common Emitter CE Amplifier Design
ECE 3274 BJT amplifier design CE, CE with Ref, and CC. Richard Cooper Section 1: CE amp Re completely bypassed (open Loop) Section 2: CE amp Re partially bypassed (gain controlled). Section 3: CC amp (open
More informationECE 304: Design Issues for Voltage Follower as Output Stage S&S Chapter 14, pp
ECE 34: Design Issues for oltage Follower as Output Stage S&S Chapter 14, pp. 131133 Introduction The voltage follower provides a good buffer between a differential amplifier and a load in two ways: 1.
More informationElectronic Devices and Circuits Lecture 18  Single Transistor Amplifier Stages  Outline Announcements. Notes on Single Transistor Amplifiers
6.012 Electronic Devices and Circuits Lecture 18 Single Transistor Amplifier Stages Outline Announcements Handouts Lecture Outline and Summary Notes on Single Transistor Amplifiers Exam 2 Wednesday night,
More informationStudio 9 Review Operational Amplifier Stability Compensation Miller Effect Phase Margin Unity Gain Frequency Slew Rate Limiting Reading: Text sec 5.
Studio 9 Review Operational Amplifier Stability Compensation Miller Effect Phase Margin Unity Gain Frequency Slew Rate Limiting Reading: Text sec 5.2 pp. 232242 Twostage opamp Analysis Strategy Recognize
More informationThe current source. The Active Current Source
V ref +  The current source Minimum noise euals: Thevenin Norton = V ref DC current through resistor gives an increase of /f noise (granular structure) Accuracy of source also determined by the accuracy
More informationMod. Sim. Dyn. Sys. Amplifiers page 1
AMPLIFIERS A circuit containing only capacitors, amplifiers (transistors) and resistors may resonate. A circuit containing only capacitors and resistors may not. Why does amplification permit resonance
More informationEECS 105: FALL 06 FINAL
University of California College of Engineering Department of Electrical Engineering and Computer Sciences Jan M. Rabaey TuTh 23:30 Wednesday December 13, 12:303:30pm EECS 105: FALL 06 FINAL NAME Last
More informationOperational Amplifiers
Operational Amplifiers A Linear IC circuit Operational Amplifier (opamp) An opamp is a highgain amplifier that has high input impedance and low output impedance. An ideal opamp has infinite gain and
More informationChapter 5. BJT AC Analysis
Chapter 5. Outline: The r e transistor model CB, CE & CC AC analysis through r e model commonemitter fixedbias voltagedivider bias emitterbias & emitterfollower commonbase configuration Transistor
More information6.012 Electronic Devices and Circuits
Page 1 of 10 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits Exam No. 2 Thursday, November 5, 2009 7:30 to
More informationChapter 9: Controller design
Chapter 9. Controller Design 9.1. Introduction 9.2. Effect of negative feedback on the network transfer functions 9.2.1. Feedback reduces the transfer function from disturbances to the output 9.2.2. Feedback
More informationElectronics II. Midterm II
The University of Toledo su7ms_elct7.fm  Electronics II Midterm II Problems Points. 7. 7 3. 6 Total 0 Was the exam fair? yes no The University of Toledo su7ms_elct7.fm  Problem 7 points Equation ()
More informationLecture 140 Simple Op Amps (2/11/02) Page 1401
Lecture 40 Simple Op Amps (2//02) Page 40 LECTURE 40 SIMPLE OP AMPS (READING: TextGHLM 425434, 453454, AH 249253) INTRODUCTION The objective of this presentation is:.) Illustrate the analysis of BJT and
More informationChapter 10 Instructor Notes
G. izzoni, Principles and Applications of lectrical ngineering Problem solutions, hapter 10 hapter 10 nstructor Notes hapter 10 introduces bipolar junction transistors. The material on transistors has
More informationElectronics II. Final Examination
f3fs_elct7.fm  The University of Toledo EECS:3400 Electronics I Section Student Name Electronics II Final Examination Problems Points.. 3 3. 5 Total 40 Was the exam fair? yes no Analog Electronics f3fs_elct7.fm
More informationE40M. Op Amps. M. Horowitz, J. Plummer, R. Howe 1
E40M Op Amps M. Horowitz, J. Plummer, R. Howe 1 Reading A&L: Chapter 15, pp. 863866. Reader, Chapter 8 Noninverting Amp http://www.electronicstutorials.ws/opamp/opamp_3.html Inverting Amp http://www.electronicstutorials.ws/opamp/opamp_2.html
More informationExact Analysis of a CommonSource MOSFET Amplifier
Exact Analysis of a CommonSource MOSFET Amplifier Consider the commonsource MOSFET amplifier driven from signal source v s with Thévenin equivalent resistance R S and a load consisting of a parallel
More informationThe equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A =
The equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A = 10 10 4. Section Break Difficulty: Easy Learning Objective: Understand how real operational
More informationD is the voltage difference = (V +  V  ).
1 Operational amplifier is one of the most common electronic building blocks used by engineers. It has two input terminals: V + and V , and one output terminal Y. It provides a gain A, which is usually
More informationECE 6412, Spring Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120
ECE 6412, Spring 2002 Final Exam Page 1 FINAL EXAMINATION NAME SCORE /120 Problem 1O 2O 3 4 5 6 7 8 Score INSTRUCTIONS: This exam is closed book with four sheets of notes permitted. The exam consists of
More informationElectronic Circuits. Prof. Dr. Qiuting Huang Integrated Systems Laboratory
Electronic Circuits Prof. Dr. Qiuting Huang 6. Transimpedance Amplifiers, Voltage Regulators, Logarithmic Amplifiers, AntiLogarithmic Amplifiers Transimpedance Amplifiers Sensing an input current ii in
More informationChapter 4 FieldEffect Transistors
Chapter 4 FieldEffect Transistors Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock 5/5/11 Chap 41 Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation
More informationEE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET
EE 230 Lecture 33 Nonlinear Circuits and Nonlinear Devices Diode BJT MOSFET Review from Last Time: nchannel MOSFET Source Gate L Drain W L EFF Poly Gate oxide nactive psub depletion region (electrically
More informationBiasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION
4 DC Biasing BJTs CHAPTER OBJECTIVES Be able to determine the dc levels for the variety of important BJT configurations. Understand how to measure the important voltage levels of a BJT transistor configuration
More information6.012 Electronic Devices and Circuits
Page 1 of 12 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Electronic Devices and Circuits FINAL EXAMINATION Open book. Notes: 1. Unless
More informationECE 255, Frequency Response
ECE 255, Frequency Response 19 April 2018 1 Introduction In this lecture, we address the frequency response of amplifiers. This was touched upon briefly in our previous lecture in Section 7.5 of the textbook.
More informationSwitching circuits: basics and switching speed
ECE137B notes; copyright 2018 Switching circuits: basics and switching speed Mark Rodwell, University of California, Santa Barbara Amplifiers vs. switching circuits Some transistor circuit might have V
More informationChapter7. FET Biasing
Chapter7. J configurations Fixed biasing Self biasing & Common Gate Voltage divider MOS configurations Depletiontype Enhancementtype JFET: Fixed Biasing Example 7.1: As shown in the figure, it is the
More informationBJT Biasing Cont. & Small Signal Model
BJT Biasing Cont. & Small Signal Model Conservative Bias Design Bias Design Example Small Signal BJT Models Small Signal Analysis 1 Emitter Feedback Bias Design Voltage bias circuit Single power supply
More informationVidyalankar S.E. Sem. III [EXTC] Analog Electronics  I Prelim Question Paper Solution
. (a) S.E. Sem. [EXTC] Analog Electronics  Prelim Question Paper Solution Comparison between BJT and JFET BJT JFET ) BJT is a bipolar device, both majority JFET is an unipolar device, electron and minority
More informationEngineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties
Engineering 60 Spring 0 Answers to Homework # 4 Biasing and Small Signal Properties.).) The inband Thevenin equivalent source impedance is the parallel combination of R, R, and R3. ( Inband implies the
More informationECE2210 Final given: Fall 13
ECE22 Final given: Fall 3. (23 pts) a) Draw the asymptotic Bode plot (the straightline approximation) of the transfer function below. Accurately draw it on the graph provided. You must show the steps
More informationTransistor amplifiers: Biasing and Small Signal Model
Transistor amplifiers: iasing and Small Signal Model Transistor amplifiers utilizing JT or FT are similar in design and analysis. Accordingly we will discuss JT amplifiers thoroughly. Then, similar FT
More informationClass AB Output Stage
Class AB Output Stage Class AB amplifier Operation Multisim Simulation  VTC Class AB amplifier biasing Widlar current source Multisim Simulation  Biasing 1 Class AB Operation v I V B (set by V B ) Basic
More informationLecture 050 Followers (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen
Lecture 5 Followers (1/11/4) Page 51 LECTURE 5 FOLLOWERS (READING: GHLM 344362, AH 221226) Objective The objective of this presentation is: Show how to design stages that 1.) Provide sufficient output
More information