# MICROELECTRONIC CIRCUIT DESIGN Second Edition

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1 MICROELECTRONIC CIRCUIT DESIGN Second Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems Updated 10/23/06 Chapter years, 5.06 years years, 6.65 years MW, 511 ka mv, 5.71 V mv/bit, A, cos (1000t) A 1.19 [5 + 2 sin (2500t) + 4 sin (1000t)] V V, 3.30 V, 76.7 µa, 300 µa µa, 100 µa, 8.20 V Ω, v s kω, 1.07 x 10-3 v s MΩ, i s / 45, 100 / sin 750πt mv, 11.0 sin 750πt µa R 2 /R V, V 1.41 Band-pass amplifier sin (2000πt) cos (8000 πt) V V 1.47 [1980Ω, 2020Ω], [1900Ω, 2100Ω], [1800Ω, 2200Ω] Ω, 800 ppm/ o C , 0.995, 6.16; 3.295, , Chapter For Ge: 35.9/cm3, /cm 3, /cm cm/s, cm/s, A/cm 2, A/cm K

2 cm/s x 10 6 A/cm 2, A K 2.19 Acceptor, donor V/cm x 10 4 atoms /cm 3, /cm x /cm 3, 500/cm 3, 2 x /cm 3, /cm x /cm 3, 333/cm /cm 3, /cm 3, 350cm 2 /V s, 150cm 2 /V s,0.042 Ω cm, p-type /cm 3, 10 4 /cm 3, 710cm 2 /V s, 260cm 2 /V s,2.40 Ω cm, p-type /cm Yes add equal amounts of donor and acceptor impurities. Then n = n i = p, but the mobilities are reduced. See Prob /cm mv, 12.9 mv, 25.9 mv exp( 5000x) A/cm 2 ; 1.20 ma 2.48 (b) 553 A/cm 2, 603 A/cm 2, + 20 A/cm 2, 7 A/cm 2, A/cm 2, -638 A/cm µm Chapter /cm 2, 10 2 /cm 3, /cm 3, 10 5 /cm 3, V, µm V, 1.02 µm, 1.02 µm, µm, 15.8 kv/cm V, 3.06 µm A/cm x /cm K K , 3.17 pa V; V; 0 A; A; A V; 1.38 V V; V V; V mv/k V, 2.74 µm, 11.7 µm, 36.2 µm V 2

3 V, 0 Ω nf/cm 2 ; 37.6 pf ff, 10 fc; 100 pf, 2.5 pc MHz; 21.9 MHz V, V V, V 3.56 Load line: (450 µa, V); SPICE: (443 µa, V) 3.59 (0.600 ma, -4 V) 3.65 Load line: (51µA, 0.49 V); Mathematical model: (49.93µA, V); Ideal diode model: (100 µa, 0 V); CVD model: (40.0µA, V) 3.69 (a) (0.500 ma, 0 V); (0.465 ma, V) 3.71 (a) ( 6.67 V, 0 A), (0 V, 1.67 ma); ( 6.15 V, 0 A), (0.75 V, 1.62 ma) 3.73 (a) (1.00 ma, 0 V) (0 ma, -2 V) (1.00 ma, 0) (d) (0 A, V) (0 ma, V) (0.567 ma, 0 V) 3.76 (1.50 ma, 0 V) (0 A, -5 V) (1.00 ma, 0) 3.78 (I Z, V Z ) = (343µA, 4.00 V) mw W, 3.50 W (V P V on ) V; 1.05 F; 17.8 V; 3530 A; 841 A (ΔT = ms) V, F, 17.8 V, 3540 A, 839 A F; 12 V; 4.24 V; 1540 A; 7530 A V; F; 16.8 V; 210 A; 1770 A µf, 2000 V, 1414 V, ms, 314 A µf; 4000 V; 1410 V; 44.4 A; 314 A δ = 2/3; C = 74.1 µf 82 µf; L = 1.48 mh 1.5 mh V O = V S 1 δ V on; 6.75 V; 37.5 mv; 44.4 ma η = 100% 1 + (1 δ) V on V S ;96.4%; η = 100% 1 + (1 δ) V ond V S + δ V ons V S δ = 0.300; C = 2.08 µf 2.2 µf; L = 7.00 mh 6.8 mh V O = V S δ V on (1 δ); 4.63 V; 116 mv; 46.3 ma; slightly reduced output voltage, <50 percent of ripple voltage and current Slopes: 0, +0.5, 0.667; breakpoints: 2 V, 0 V Slopes: +0.25, +0.5, +0.25, 0; breakpoints: 0 V, 2 V, 4 V 3

4 ma, 4.4 ma, 3.6 ma, 8.6 ns (0.969 A, V); W; 1 A, V µm, µm; far infrared, near infrared Chapter x 10-9 F/cm µa/v 2, 86.3 µa/v 2, 173 µa/v 2, 345 µa/v (a) 4.00 ma/v 2 (b) 4.00 ma/v 2, 8.00 ma/v µa; 218 µa Ω; 148 Ω µa/v A/V µa/v2 ; 1.5 V; enhancement mode; 5/ µa, linear region; 195 µa, saturation region; 0 A, cutoff 4.27 saturation; cutoff; saturation; linear; linear; saturation ma; 1.56 ma ma, 4.52 ma, 2.48 ma ma; 6.00 ma (our linear region model does not contain λ) µa; 98.1 µa µa; 28.8 µa V µa/v2 ; 34.5 µa/v 2 ; 69.0 µa/v 2, 138 µa/v µa; 9.00 µa; µa; 4.10 µa Ω; 94.1 Ω; 250/ A/V µa 4.62 V TN > 0; depletion mode; no F/cm 2 ; 4.32 ff nf 4.81 (390 µa, 1.1 V); triode region 4.84 (70.2 µa, 9.47 V) 4.86 (42.3 µa, 9.00 V) µa; 116 µa kω, 470 kω, 12 kω, 12 kω 20/ (124 µa, 2.36 V) (32.5 µa, 1.26 V) (23.0 µa, 1.12 V) 4

5 4.107 (58.3 µa, 9.20 V) (227 µa, 3.18 V) ma; 10.8 ma (9/10) = 1.11/ (a) (124 µa, 5.70 V) (b) (182 µa, 1.34 V) V, 2.71 ma, 10.8 ma ma; 6.77 ma; 2.61 ma (59.8 µa, 6.03 V), 138 kω (a) (98.4 µa, 2.15 V) kω (200 µa, 13 V) (36.3 µa, 12.9 mv); (31.7 µa, 1.54 V); (28.2 µa, 2.69 V) kω, V 5 V V, 0.77 V ff, 17.3 ff (500 µa, 5.00 V); (79.9 µa, V); (159 µa, 3.70 V) kω; 10.0 kω ma, 0, 1.17 V; 1.38 ma, 0.62 ma, 0.7 V (69.5 µa, 3.52 V); (131 µa, 3.52 V) (69.5 µa, 5.05 V); (456 µa, 6.20 V)) Chapter , 0.667, 3.00, 0.909, 49.0, , , fa; 1.01 fa, V fa ma; 1.07 ma V V µa µa µa, 930 µa, 48.9 µa 5.35 saturation, forward-active region, reverse-active region, cutoff , 87.5, mv, 25.8 mv, 30.2 mv ma; 388 µa; ff; 1.2 pf; 120 pf MHz, 3 MHz 5

6 µm 5.59 I C = 16.3 pa, I E = 17.1 pa, I B = pa, forward-active region; although I C, I E, I B are all very small, the Transport model still yields I C β F I B , 1.73 fa MHz , 17.3 aa µa, µa, 55.3 µa 5.69 v ECSAT is identical to Eq. (5.46) V, V , 43.1 V µa, 4.52 µa, 95.5 µa, V, V, V; 2.19 ma, ma, 2.09 ma, V, V 5.82 (80.9 µa, 3.80 V); (404 µa, 3.80 V) 5.86 (42.2 µa, 4.39 V) 5.92 (7.8 ma, 4.1 V) 5.94 (5.0 ma, 1.3 V) kω (or 62 kω), 1.5 MΩ; 12.4 µa, V µa, 98.4 µa V Ω µa, 86.0 µa, 4.00 V, 5.95 V percent; 70 percent ma, 9.71 ma, 1.28 V, 3.73 V Chapter µw/gate, 2 µa V, 0 V, 0 W, 0.25 mw; 3.3 V, 0 V, 0 V, 0.11 mw 6.5 V OL = 0 V, V OH = 3.3 V, V REF = 1.1 V; Z = A V, 0 V, 2 V, 1 V, V, 2 V, 3 V, 2 V V, 0 V, 1.8 V, 1.5 V, 1.5 V, 1.5 V V, 1.36 V ns µw, 1.52 µa, 5 fj RC; 2.20 RC V, 1.36 V, 0.5 ns, 0.5 ns, 8 ns, 9 ns, 4 ns, 4 ns 6.24 Z = Z =

7 6.29 2; Z = AB; Z = A + B Y = ABC 6.37 V REF = 2.8 V pf µw/gate, 4 µa/gate V, 3.13 V kω; 4.90/1; 1.47 V, V Ω; 2500 Ω; a resistive channel exists connecting the source and drain; 20/ V V, V /1, 1/ V 6.71 ratioed logic so V OH = 3.39 V, V OL = 0.25 V; P = 0.18 mw V /1, 1/1.41, V, 1.36 V /1, 1/ /1, 1/ Y = ( A + B)(C + D)(E + F), 6.18/1, 1/ Y = ACE + ACDF + BF + BDE, 1.40/1, 24.7/1, 16.5/ /4.30, 3.09/ Y = (C + E)[ A(B + D) + G] + F ; 1/1.08, 4.12/1, 6.18/1, 12.4/ /1, 6.06/1, 6.24/1, 6.42/ V, V /1, 8.24/1, 12.4/1, 24.8/ I DS = 2I DS, P D = 2P D ns ns, a potentially stable state exists with no oscillation ns, 6.23 ns, 17.9 ns ns, 4.44 ns, 11.8 ns /1, 25.3/1, 13.6 ns, 2.07 ns (a) 1/3.39 (d) 1/9.20 (f) 1/ V, V /1, 7.09/ V, 4.68 V 7

8 6.152 Y = A + B Chapter µa/v2 ; 11.1 µa/v pa; 450 pa; 450 pa V, 0 V 7.8 cut off, triode, triode, triode, saturation, saturation V; 2.16 V V, 2.16 V /1, 1/ V, 1.70 V; 1.69 V, 1.17 V ns, 3.22 ns ns, 4.36 ns /1, 10.8/ /1, 17.8/ ns, 2.3 ns, 1.2 ns, 1.1 ns, C = 177 ff µw/gate, 16.0 ff, 36.7 ff W; 1.74 W µa; 2.25 µa 7.41 αδt, α 2 P, α 3 PDP /1, 8/1; 15/1, 24/ /1, 2/ ns, 8.13 ns, 8.13 ns 7.57 (a) 5 transistors /1, 15/1 Y = ( A + B)(C + D)E = ACE + ADE + BDE + BCE, 15/1, 18/1, 30/ /1, 6/1, 10/ /1, 24/1, 40/ ns, 2.6 ns ns, 48.8 ns 7.79 V DD 2 3 V DD 1 2 V DD; R 7.85 N = 6, A = 462 A o Ω, 1250 Ω /1 2V IH V DD V IH = 2V IH NM H, C C 2 8

9 7.94 N ML = V DD + 3V TN + V TP 4 N MH = V DD V TN 3V TP 4 Chapter ,435,456 ; 1,073,741, pa µv level is discharged by junction leakage current mv; 2.48 V V, V; 1.83 V mw µa, 1.85 W V V ,304; 11, V DD 2 3 V DD 1 2 V DD; R W 3 = /1 2V IH V DD V IH = 2V IH NM H Chapter V, V, 0 V V, 1.4 V, 1.2 V, 132 mv, 10.4 mw V, 1.70 V, 1.20 V, 1.00 V V, 1.50 V, 1.10 V, 2.67 kω; V, V, V µa kω, 1.17 kω, 200 Ω, 185 Ω V V µa, V kω, 10.0 kω, 58.5 kω, 210 kω V, V, 314 Ω ma ma Ω, 60.0 ma 9.40 (c) 0 V, -0.7 V, 3.93 ma (d) 3.7 V, ma (e) 2920 Ω 9

10 9.43 Y = A + B V; 1.14 V V; V; V; V µa V; 3.59 pj V, V, 5.67 mw; Y = A + B + C, Y = A + B + C, 5 vs kω, 5.40 kω, 31.6 kω, 113 kω kω, 4.84 kω, 120 kω pa, 74.5 fa ; 0.976; 5; V V, V mv, mv V, 0.15 V, 0.66 V, 0.80 V, V, 2.47 ma kω, 22.4 kω V, 0.15 V, 0; 1.06 ma, 31; 1.06 ma vs ma, 0 ma vs. 0.2 ma ma, 34.9 ma 9.99 (I B, I C ): (a) (135 µa, 169µA); (515µA, 0); (169 µa, 506 µa); (0, 0) (b) all 0 except I B1 = I E1 = 203 µa V, 0.15 V; 62.5 µa, 650 µa; Y = ABC ; 1.9 V; 0.15 V; 0, 408 µa V, 0.25 V; 0, 1.00 ma; µa, 963 µa, (I B, I C ): (532µA, 0); (0, 0); (0, 0); (3.75 µa, 150 µa) Y = A + B + C; 0 V, 1.0 V; 0.90 V Y = A + B + C; 0 V, 0.80 V; 0.40 V Chapter Using MATLAB: t = linspace(0,.004); vs = sin(1000*pi*t)+0.333*sin(3000*pi*t)+0.200*sin(5000*pi*t); vo= 2*sin(1000*pi*t+pi/6)+sin(3000*pi*t+pi/6)+sin(5000*pi*t+pi/6); plot(t,vs,t,vo)par 500 Hz: 1 0, 1500 Hz: , 2500 Hz: ; 2 30, 1 30, , 3 30, 5 30 yes db, 111 db, 73.2 db , 2.00 x 10 5, 1.59 x (20 db), 0.1 V 10

11 sin (1000t); there are only two components; dc: 8 V, 159 Hz: 4 V g 12 g 11 g 22 g 21 1 g 21 ; g g 11 g 22 g 21 g g g 22 ; % kω, 1, 101, 4.17 µs MΩ, 240 kω, 24.2 MΩ, 240 kω kω, , 98.3, 16.4 µs kω, 1.00 kω, 6.00 MΩ, 61.0 kω ms, 1, 2001, 20 kω S, 50.0 µs, S, 50.0 µs y 11 y 12 y 21 y 22 y 11 ; y 12 y 22 0; y 21 y 22 ; 1 y g 11 g 12 g 21 g ; g g 21 g 22 g g ; mv; 1.00 W ,, 125 mw, db, 23.9 khz db, 145 Hz db, 10 khz, 10 Hz, 9.99 khz, band-pass amplifier db,, 50 Hz,, high-pass amplifier Hz, 100 khz sin (10πt ) V, sin (1000πt 1.72 ) V, sin (10 5 πt 78.7 ) V sin (2πt ) V, 2.12 sin (100πt ) V, 3.00 sin (10 4 πt )V π s π ; 10 8 π s π khz, -60 db/decade sin (1000πt + 10 ) sin (3000πt + 30 ) sin (5000πt + 50 ) V; Using MATLAB: t = linspace(0,.004); vs = sin(1000*pi*t)+0.333*sin(3000*pi*t)+0.200*sin(5000*pi*t); vo = 10*sin(1000*pi*t+pi/18)+3.33*sin(3000*pi*t+3*pi/18)+2.00*sin(5000*pi*t+5*pi/18); plot(t, 10*vs, t, vo) Chapter db, 120 db, 89.9 db; 5.05 mv MΩ 11

12 mv, 140 db 11.7 (a) 46.8, 4.7 kω, 0, 33.4 db ,, 0, 83.9 db (0.510 sin 3770t 1.02 sin 10000t) V, , 110 kω, 10 kω , ( sin4000πt) V (a) 79.6 pf (b) 82 pf, 19.4 khz , 20.0 kω; +6.00, 47.0 kω, 0, 36.0 kω (not a useful circuit) A; V; V; 7.03 W (choose 10 W), 7.27 W v 1 v 2 R ; ; R(1 + A) V, 3.99 V, 1.99 V, 1.99 V, 3.99 V, 199 µa; 5 MΩ kω, 49.6 kω V; 1.80 V; 0 to 3.00 V in 0.20-V steps A and B taken together, B and C taken together ,, , 8.62 kω, MΩ, 3.75 mω Noninverting to achieve R IN with an acceptable value for resistor R 2 : R OUT can be met; R IN is not achievable v S, 85.9 mω percent db sin 5000πt, 10 sin 120πt; 10, 0.037; 48.6 db; 5.00 sin 5000 πt sin 120πt mv, 0, 26.0 mv, yes, 90.9 kω A V = 10,000 [u(v ID ) u(v ID )] kω, 1.00 MΩ V; V; 18.7 percent V, 0 V; 15.0 V, V One possibility: 1 kω, 20 kω R 2 sc(r 1 R 2 ) + 1 scr R stages: 1 kω, 20 kω, 200 pf A V (s) = s ; bode ( 3.65e13,[13,142e e12]) 12 s kω, 200 kω, 796 pf , 143 khz; 78.1 db, 72.9 khz Two stages 12

13 , 145 khz, [6.35, 7.53], [133 khz, 157 khz] V/µs V/µs kω, 1 kω, 2.55 µf, , 50 Ω; add two 10 9 Ω resistors ,000, Ω, 1 kω, unspecified, 12.7 µf µf, µf, 1.13 kω, 20.0 khz; µf, µf Chapter (a) µf, 0.01 µf, 1.13kΩ, 1, 20 khz ; 1 K s 2 R 1 R 2 C 1 C 2 + s[r 1 C 1 (1 K ) + C 2 (R 1 + R 2 )] + 1 ; kω, 100 kω, µf rad/s, rad/s, 15.6; s s khz, 1.34 khz, 4.05, 63.1 db K 3 K (0, T/2): 0 V, (T/2, 3T/2): 1 V, (3T/2, 5T/2): 4 V, (5T/2, 7T/2): 8 V, (7T/2, 9T/2): 12 V, (9T/2, 5T): 15 V khz, 1.58, 7.96 khz V; V; n ( ) V : 0, 001: , 010: , 100: ; LSB, LSB; LSB, LSB percent, 2.5 percent, 5 percent, 10 percent V, V, V, V kω, LSB, LSB; kω, LSB, LSB (a) (2 n+1-1)c (b) (3n+1)C V, V, V, V, 0 V, V, V, V ( V, V) , 95 µs ns RC s; v O (200 ms) = V For θ = 0, V M T T RC V 1V 2 /(10 4 I s ) V Hz V, 2.62 V, V sinωt T ωt T 13

14 V, V, V Hz µs, 416 µs Chapter sin 2000πt V; 1.03 sin 2000πt V; sin 2000πt V; 2.82 ma 13.3 Bypass, coupling, coupling; 0 V 13.6 Coupling, coupling (ignore repeated question) 13.9 Coupling, coupling, coupling; 0V Coupling, coupling (1.78 ma, 6.08 V) (98.4 µa, 4.96 V) (82.2 µa, 6.04 V) (307 µa, 3.88 V) (338 µa, 5.40 V) (1.00 ma, 7.50 V) Thévenin equivalent source resistance, gate-bias voltage divider, gate-bias voltage divider, sourcebias resistor sets source current, drain-bias resistor sets drain-source voltage, load resistor µa, 50 mv (188 µa, V CE 0.7 V ), 7.52 ms, 532 kω (1.88 µa, V CE 0.7 V), 75.0 µs, 53.3 MΩ (b) +16.7%, -13.6% , 120; 95, Yes, using I C R C = (V CC + V CE )/ ma; 30.7 V , ( 95.0, 94.1) A %, 20% Virtually any desired Q-point (156 µa, 9 V) = 133,000i P + v PK ; (1.4 ma, 215 V); 1.6 ms, 55.6 kω, 89, FET µa,

15 13.94 Yes, it is possible although the required value of V GS V TN (6.70 V) is getting rather large V, (125 µa, 7.5 V) V, 25 V µa kω, 94.4 kω Ω, 3.62 kω (b) 1 MΩ, 0, 7.45 MΩ, 3.53 MΩ MΩ, 45.8 kω MΩ, 508 kω MΩ, 6.82 kω v S, 45.8 kω , 630 Ω, 960 Ω; gain reduced by 25 percent due to lower input resistance kω, 96.0 kω, ma/v 2, 842 kω µw, mw, mw, mw, 2.43 mw mw, mw, 2.07 mw, 24.6 µw, 24.6 µw, 5.58 mw V CC / V, 13.6 V µa, 2.30 V µa, 2.02 V µa, 1.76 V Chapter (a) C-C, (b) not useful, (h) C-B, (o) C-D ,, 20.0 kω, ; 10.0,, 10.0 kω, (a) 6.91 (e) kω, 66.7 kω , 60.9, 2.83 kω, 8.20 kω, 6.76 mv , 11.6, 368 kω, 75 kω, 183 mv , 84.9, 1.00 MΩ, 39.0 kω, 1.49 V ,, 100 Ω, , 1.29, 31.6 kω, 9.19 Ω, 2.83 V , 969, 1.00 MΩ, 555 Ω, 628 V ( V R4 ) V 15

16 , 2.00 kω,, 1; 14.3, 2.00 kω,, , 1.98 kω, 4.92 MΩ, 1; 23.7, 1.98 kω, 10.1 MΩ, , 0.178, 2.73 kω, 24.0 kω, V , 0.274, 252 Ω, 39.0 kω, 14.9 mv Ω Ω (β o + 1)r o = 153 MΩ A v = 398 with R in = 1 MΩ: A C-E amplifier operating at low current should be able to achieve both high A v and high R in. It would be difficult to achieve A V = 52 db with an FET stage A follower has a gain of approximately 0 db. The input resistance of a C-C amplifier is approximately (β o + 1)R L 101(10 kω) = 1 MΩ. Therefore a C-D stage would be preferred to achieve the gain of approximately 1 with R in = 25 MΩ A noninverting amplifier is needed. Either the C-B or C-G amplifier should be able to achieve A V Ω = +10 with R in = 2 kω with proper choice of the Q-point µ f v s, R 5 + r o 1+ g m R v s, ( R th + r π ) /( β o +1) ( ) r o ( 1+ g m R 5 ) ( β (a) z 21 = R o +1)R E B R r π + ( B z 12 = β o +1)R E (a) g 21 = +g m R D g 12 = ( 1/g m )( 1+ R L /r o ) for µ f >> , 0.993, V R B R E R B + r π + ( β o +1)R E R D R D + r o R D r o g 21 g 12 g m r o = µ f SPICE: (106 µa, 7.14 V), 14.2, 369 kω, 65.8 kω SPICE: (9.81 µa, 5.74 V), 0.983, 11.0 MΩ, 2.58 kω SPICE: (268 µa, 8.60 V), 4.26, 1.27 kω, 18.8 kω SPICE: (5.59 ma, 5.93 V), 3.27, 10.0 MΩ, 1.53 kω SPICE: (3.84 ma, 10.0 V), 0.953, 1.00 MΩ, 504 Ω (a) 0.01 µf, 270 µf, 0.15 µf, (b) 2.7 µf (a) 0.50 µf, 0.68 µf (a) 8200 pf, 820 pf (b) µf, 1800 pf, µf ma R 1 = 120 kω, R 2 = 110 kω The second MOSFET R B β o +1 ( ) A v max = 54.8, A v min = 44.8 beyond the Monte Carlo results by approximately 2 percent of nominal gain. z 21 z 12 β o +1 16

17 Voltage is not sufficient transistor will be saturated , 1000 Ω,, 1; A v is 2 larger, R in is 2 smaller Chapter , 1 MΩ, 64.3 Ω , 8.29 kω, 401 Ω , 73.8 kω, 20 kω (a) (5.00 ma, 10.3 V), (1.88 ma, 3.21 V), (2.47 ma, 6.86 V) (b) (5.00 ma, 9.45 V), (2.38 ma, V), (3.15 ma, 4.60 V) Q 2 is saturated! The circuit will no longer function properly as an amplifier (a) (325 µa, 7.14 V), (184 µa, 7.85 V), 86.1 db (a) (50.0 µa, 1.58 V), (215 µa, 13.2 V), 63.2, 1 MΩ, 1.91 kω (a) (223 µa, 2.87 V), (1.96 ma, 5.00 V), 218, 7.61 kω, 241 Ω (b) 1.49, 75.6 kω (a) (4.44 µa, 1.40 V), (23.3 µa, 2.30 V) (b) (4.08 µa, 1.42 V), (23.6 µa, 2.28 V) I C2 = β F I C1, g m = g m, r π = β o r π, r o = r o 2, β o = β o (β o + 1), µ f = µ f I C2 = β F I C1, g m = g m, r π = β o r π, r o = r o β o, µ f = µ f (8.52 µa, 1.42 V), (8.40 µa, V), 48.1, cascode amplifier (a) (20.7 µa, 5.87 V) (b) 273, 243 kω, 660 kω (c) 0.604, 47.1 db, 27.3 MΩ (a) (8.43 µa, 1.36 V) (b) 33.7, 1.02 kω, for differential output, 24.4 db for single-ended output, 594 kω, 200 kω, 4.90 MΩ, 50 kω R EE = 1.1 MΩ, R C = 1.0 MΩ (200 µa, 4.90 V); differential output: 312, 0, ; single-ended output: 155, , 64.2 db; 25.0 kω, 40.4 MΩ, 78.0 kω, 39.0 kω V O = 1.09 V, v o = 0; V O = 1.09 V, v o = 219 mv; 5.00 mv (47.4 µa, 6.23 V); Differential output: 379, 0, ; single-ended output: 190, 0.661, 49.2 db; 158 kω, 22.7 MΩ V, 13.1 V, 3.00 V , , 95.2 db (24.2 µa, 5.36 V); A dd = 45.9, A cc = 0.738, differential CMRR =, single-ended CMRR = 24.7 db,, (91.3 µa, 12.9 V); A dd = 16.7, A cc = 0.486, differential CMRR =, single-ended CMRR = 25.1 db,, (150 µa, 7.60 V); A dd = 26, A cc = 0.233, differential CMRR =, single-ended CMRR = 34.9 db,, 17

18 15.77 (142 µa, 7.27 V); A dd = 21.7, A cc = 0.785, differential CMRR =, single-ended CMRR = 22.9 db,, (20.0 µa, 6.67 V); A dd = 26.8, A cc = 0.119, differential CMRR =, single-ended CMRR = 41.0 db,, V, 1.22 V, 62.1 mv (99.0 µa, 10.8 V); A dd = 30.1, A cc = 0.165, 553 kω (24.8 µa, 12.0 V), (500 µa, 12.0 V), 1040, 202 kω, 20.6 kω, 147 MΩ, v (a) (98.8 µa, 14.3 V), (300 µa, 14.3 V) (b) 551, 40.5 kω, (c) 49.0 kω (d) 34.6 MΩ, (e) v (98.8 µa, 14.3 V), (300 µa, 14.3 V), 27800, 40.5 kω (a) (250 µa, 15.6 V), (500 µa, 15.0 V) (b) 4300,, 165 kω (c) v 2 (d) v (250 µa, 4.92 V), (6.10 µa, 4.30 V), (494 µa, 5.00 V), 4230,, 97.5 kω (250 µa, 10.9 V), (2.00 ma, 9.84 V), (5.00 ma, 12.0 V), 866,, 127 Ω (300 µa, 5.10 V), (500 µa, 2.89 V), (2.00 ma, 5.00 V), 529,, 341 Ω (99.0 µa, 5.00 V), (500 µa, 3.41 V), (2.00 ma, 5.00 V), 11400, 50.5 kω, 224 Ω (4.95 µa, 2.36 V), (24.5 µa, 3.07 V), (245 µa, 3.00 V), 249, 1.01 MΩ, 1.63 kω, v B, v A, 900, r π 3 and r π 4 are low, R IN5 is low (99.0 µa, 1.40 V), (990 µa, 12.0 V), 189, 50.6 kω, 1.06 kω (24.8 µa, 17.3 V), (24.8 µa, 17.3 V), (9.62 µa, 15.9 V), (490 µa, 16.6 V), (49.0 µa, 17.3 V), (4.95 ma, 18.0 V), 88.5 db, 202 kω, 18.1 Ω µa µa µa ma, 0 ma, 10 ma, 12.5 percent percent ma, 19.6 V ma, 0 ma mω (a) 22.8 µa, 43.9 MΩ Two of many: 75 kω, 62 kω, 150 Ω; 68 kω, 12 kω, 1 kω µa, 16.3 MΩ µa, 101 MΩ µa, 168 MΩ, 5.11 µa, 555 MΩ, 16.9 µa, 168 MΩ µa, 22.1 MΩ, 10.0 µa, 210 MΩ µa, 657 GΩ (9.34 µa, 9.03 V), (4.62 µa, 7.62 V), 96.5 db β o1 µ f 1 / V 18

19 Chapter kω R 4.31 kω percent, 13.3 percent percent, µa, µa µa, 383 kω, 574 µa, 192 kω (a) 944 µa, 68.9 kω, 1.52 ma, 41.5 kω µa, 690 µa, 1.31 ma, 600 kω, 100 kω, 66.4 kω µa, 31.3 MΩ, 29.3 µa, 15.2 MΩ kω, 9.78 kω, V EE V for V CB V EE = V / µa, 1.16 GΩ; 20.3 kv; 2.11 V µa, 163 MΩ, 2750 V; 2V BE = 1.4 V µa, 295 µa, 66.5 µa µa µa, 140 µa µa µa, 15.3 µa µa, 308 µa , 6.28 x 10-5, 122 db , 0, (100 µa, 8.70 V), (100 µa, 7.45 V), (100 µa, 2.50 V), (100 µa, 1.25 V), 323, (125 µa, 1.54 V), (125 µa, 2.79 V), (125 µa, 2.50 V), (125 µa, 1.25 V); µa (b) 100 µa (125 µa, 8.63 V), (125 µa, 1.31 V), (125 µa, 10.0 V), (125 µa, 8.71 V), (125 µa, 1.29 V), (125 µa, 6.00 V), (125 µa, 2.75 V); 43.4; 14, , ; 80, ; , 574 Ω, 3.03 x 10 5, 60.0 kω ±1.4 V, ±2.4 V kω, 255 Ω V EE 2.8 V, V CC 1.4 V; 3.8 V, 1.7 V ms, 2.83 MΩ 19

20 (100 µa, 15.7 V), (50 µa, 12.9 V), (50 µa, V), (50 µa, 1.40 V), (50 µa, 29.3 V), (100 µa, V), (100 µa, 13.6 V), 1 ms, 752 kω Chapter 17 s , (s + 1)(s + 20), yes, 25s, 3.18 Hz,3.19 Hz (s + 20) , , s s yes, 1.59 khz,1.58 khz 10 5 s 2 (s + 1)( s + 2), s,,.356 Hz, 71.2 Hz; Hz, 66.7 Hz s (b) 14.1 (23.0 db), 11.8 Hz db, 151 Hz; 35.0 db, 12.6 Hz db, 19.2 Hz , Hz µf Cannot reach 1 Hz; f L = 13.1 Hz for C 1 =, limited by C µf ps ; ; , 98.0, 5000, 100; 350, 42.9, 300, , 1.42 MHz , 1.10 MHz /10 5 RC; 1/10 6 RC; 1/sRC (2750 j4.99) Ω, (2730 j226) Ω, (836 j1040) Ω , 43.9 Hz, 9.02 MHz; 85.1 MHz ; 92.3; 100, , 40.9 MHz , 10.9 MHz , 114 MHz C GD + C GS /(1 + g m R L ) for ω << ω T khz khz GHz, 39.8 ps µa 20

21 MHz MHz, 33.3 V/ms V/µs MHz, 2.91, pf, 12.6, n = 2.81, 21.9 pf MHz; 27.5 MHz MHz, 7.98, 112 / 90 ; 4.74 MHz, 5.21, 46.1 / MHz, 16.4, 75.1; 10.1 MHz, 3.96, 35.4 Chapter /(1+Aβ); percent db MΩ; 2.00 Ω; 20.0 MΩ; 50 mω kω, 1.02 ms, , 3141, , 10.0; 0; , 43.9 MΩ, 2.49 Ω, 98.9 ms Aβ/(1 + Aβ); 99.9 percent kω; 8.11 kω; Ω Ω; 46.2 Ω; 32.4 kω; Ω; 18.6 Ω; 34.4 kω , 973 Ω kω, 50.4 kω, 2.45 kω , 15.2 Ω, 2.72 MΩ Ω; 12.3 Ω; β o /(β o + 1), 2/ g m, (β o + 1)r o db (s/r 2C 2 )/[s 2 + s(1/r 2 C / (R 1 R 2 )C 1 ) + 1/R 1 R 2 C 1 C 2 ] T V = 987, T I = 110, T = db, 0 Hz, 1000 Hz, 0 Hz, 101 khz khz, 9.31 Hz, 81.0 khz, 5.29 Hz khz; A 2000; larger yes, but almost no phase margin; ; yes phase margin is undefined; T ( jω) < 1for all ω

22 18.86 ω = 1/RC, R F = 2R khz, 6.85 V khz, 10.7 V MHz, MHz, 18.1 MHz, mh, ff; MHz, MHz MHz; MHz 22

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