HCB1608 Series FEATURES DIMENSIONS. Chip Size:1608 B C PART NUMBERING. High Current Ferrite Chip Bead APPLICATIONS. All dimensions in units:mm

High Current Ferrite Chip Bead(Lead Free)

High Curren Ferrie Chip Bead(Lead Free) P1. HCB-Series 1.Feaures 1.Monolihic inorganic maerial consrucion. 2.Low DC resisance srucure of elecrode o preven waseful elecric power consumpion. 3.Closed magneic

Ferrite Chip Bead Array(Lead Free)

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Common Mode Noise Filter. Description. Features. Applications. LCR Meter (3GHz) Source Meter. LCR Meter (3GHz) Four Lines LCF160804A750TG

escripion covers he specificaion of he engineering requiremens for boh Common Mode Noise Filer (CMF) for high speed differenial serial inerfaces, such as US 3., US 2., MIPI, -PHY or HMI. Pinou Two Lines

ABSOLUTE MAXIMUM RATINGS (Tc=25 o C) Item Symbol Unit MDM500H65E2. 6,500 VRRM Voltage

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ABSOLUTE MAXIMUM RATINGS (TC=25 ) Item Symbol Unit MBL400E33D. DC IC 400 A 1ms ICp. 800 Forward Current. DC IF 400 A 1ms IFM

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High Voltage Standard Rectifier Module

UB35-22NO High olage Sandard ecifier Module M = 22 I = 5 D 3~ ecifier I SM = Brake hopper ES = 7 I = 3 25 E(sa) =.9 3~ ecifier Bridge + Brake Uni + NT Par number UB35-22NO Backside: isolaed 24+25 29 3

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision

MC74HC138A. 1 of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS

of 8 Decoder/ Demuliplexer High Performance Silicon Gae CMOS The is idenical in pinou o he LS8. The device inpus are compaible wih sandard CMOS oupus; wih pullup resisors, hey are compaible wih LSTTL oupus.

MBN1200E33D. DC I C 1,200 A 1ms I Cp. 2,400 Forward Current. DC I F 1,200 A 1ms I FM. 2,400 Junction Temperature. o C -40 ~ +125

IGBT MODULE Spec.No.IGBT-SP-25 R8 P1/6 MBN12E33D Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas recovery

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel

Small Signal Fas Swiching Diode Feaures These diodes are also available in oher case syles including he DO- case wih he ype designaion N8, he MiniMELF case wih he ype designaion LL8, and he SOT- case wih

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High volage, high-speed swiching npn ransisor wih inegraed damper diode in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers.

SOTiny TM LVDS High-Speed Differential Line Receiver. Features. Description. Applications. Pinout. Logic Diagram. Function Table

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Silicon Diffused Power Transistor

PHE39 GENERAL DESCRIPTION The PHE39 is a silicon npn power swiching ransisor in he TO22AB envelope inended for use in high frequency elecronic lighing ballas applicaions, converers, inverers, swiching

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High volage, high-speed swiching npn ransisors in a fully isolaed SOT99 envelope, primarily for use in horizonal deflecion circuis of colour elevision receivers. QUICK REFERENCE DATA

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High volage, high speed swiching npn ransisor in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers. Feaures excepional olerance

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved RBSOA performance

Silicon Diffused Power Transistor

Philips Semiconducors Silicon Diffused Power Transisor Produc specificaion GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved

Type Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2

SMBT94...MMBT94 NPN Silicon Swiching Transisors High D curren gain:. ma o ma Low collecoremier sauraion volage For SMBT94S: Two (galvanic) inernal isolaed ransisors wih good maching in one package omplemenary

3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC /20 NTC. Features / Advantages: Applications: Package: E2-Pack

ZB3-6ioX hyrisor Module M = 6 I = D FSM = 7 I 3~ ecifier Brake hopper ES = 2 I = 2 2 E(sa) =,8 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni + N Par number ZB3-6ioX Backside: isolaed / 3 2

Disribued by: www.jameco.com -800-83-44 The conen and copyrighs of he aached maerial are he propery of is owner. Preferred Device Schoky Barrier Diodes These Schoky barrier diodes are designed for high

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QF K A B C D A : Series Name. D : Inductance Tolerance. ( K=±10% ) B : Dimension. C : Inductance. (220uH ) CIRCUIT

SPECIFICTION HF COMPLINT 1.MECHNICL & DIMENSIONS B B (UNIT: mm) 5.2±.5 4.5±.5 C 5.8±.5 D D a 1.5ref 5.5ref C b c 2.15ref 1.7ref b CIRCUIT c a S PCB Layout F 2.ELECTRICL REQUIREMENTS: PRMETER SPECIFICTION

Sensing distance. 2 mm (slot width)

Phoomicrosensor (Transmissive) EE-SX3 Ulra-Compac Slo / SMD Type (Slo widh: mm) PCB surface mouning ype. High resoluion wih a.3-mm-wide aperure. Be sure o read Safey Precauions on page 3. Ordering Informaion

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper diode in a plasic full-pack envelope inended for use in horizonal deflecion

Standard Rectifier Module

UB2-6NOX Sandard ecifier Module M = 6 I = 8 D 3~ ecifier I SM = Brake hopper ES = 2 I = 8 25 E(sa) =.7 3~ ecifier Bridge + Brake Uni Par number UB2-6NOX M/O S Backside: isolaed ~6 ~E6 ~K6 U/ W M/O W U

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33 rightek (Europe) Limited 1.MEHNIL & DIMENSIONS 33 SPEIITION D E E D a (UNIT: mm) 6.±.2 E b c H OMPLINT 6.±.2 4.5±.1 2.6±.4 1.7±.3 8.5MX 2.ref 2.ref 6.2ref a b a c P Layout P Layout 2.ELETRIL REQUIREMENTS

METAL OXIDE VARISTORS TNR TM

MEAL OXIE VARISORS NR M RoS Complian hen he surge energy much higher han he raed maximum energy is applied o he varisors, i may blow up and cach fi re. NR SE series is o preven from being caugh fi re even

MC14008B. 4 Bit Full Adder

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MC14175BDR2G. Quad Type D Flip Flop

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MUBW 35-12 8 Converer - Brake - Inverer Module (CBI3) 21 22 D11 D13 D15 1 2 3 7 D7 1 15 T1 D1 T3 D3 T5 D5 18 2 17 5 19 4 D12 D14 D1 23 14 24 T7 11 1 T2 D2 T4 D4 T D 12 13 See ouline drawing for pin arrangemen

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PRODUKTINFORMATION. Datum ELFA artikelnr. Antal sidor: BU2525AF Effekt Transistor

Daum 98005 PRODUKTINFORMATION HÄMTFAX FAX ON DEMAND INTERNET 08-580 94 4 +46 8 580 94 4 hp://www.elfa.se TEKNISK INFORMATION 020-75 80 20 ORDERTEL 020-75 80 00 ORDERFAX 020-75 80 0 TECHNICAL INFORMATION

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SPECIFICATION PARAMETER SPECIFICATION CONDITION TEST INSTRUMENTS

rightek (Europe) Limited 1. MECHNICL & DIMENSIONS (UNIT: mm) 4R7 3R3 壮嘉雯 SPECIFICTION C a b c HF COMPLINT 7.6 Max 6.8 Max 3.2Max D 2.9±0.5 E 1.6±0.5 2.5 ref 3.7 ref 3.5 ref PC Pattern c Equivalent Circuit

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C rightek (Europe) Limited SPECIFICTION HF COMPLINT 1.MECHNICL & DIMENSIONS (UNIT: mm) C 10.0max J D 5.0ref 151 E F 2.0ref 7.6ref J 17.5max a 2.9ref b 7.0ref c 5.4ref REMRK CIRCUIT c S F a b a PC Layout

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Features / Advantages: Applications: Package: Y4

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p h a s e - o u t Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM X2

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Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D1 1 2 3 7 D7 16 1 T1 D1 T3 D3 T D 18 2 6 17 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 1 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase

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MUBW 5-6 7 Converer - Brake - Inverer Module (CBI2) 2 22 D D3 D5 2 3 7 D7 6 5 T D T3 D3 T5 D5 8 2 6 7 5 9 4 D2 D4 D6 T7 T2 D2 T4 D4 T6 D6 23 4 24 2 3 NTC 8 9 Three Phase Brake Chopper Three Phase Recifier

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UB7-NOXT Sandard ecifier Module 3~ ecifier Bridge + Brake Uni + NT M = I = 7 D SM = I 3~ ecifier Brake hopper ES = I = 8 E(sa) =.8 Par number UB7-NOXT Backside: isolaed NT ~ 7~ 9~ eaures / dvanages: pplicaions:

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MIX15R1 XPT Module 1 ES I E(sa) 1.7 Boos hopper Par number MIX15R1 Backside: isolaed /7 1/ 1 /5 Feaures / dvanages: pplicaions: Package: 1--Pack Easy paralleling due o he posiive emperaure coefficien of

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PI74STXG6 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 4567890456789045678904567890456789045678904567890456789045678904567890456789045678904567890 SOTiny

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Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D15 1 2 3 7 D7 16 15 T1 D1 T3 D3 T5 D5 18 6 17 5 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase

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