CD4089 CMOS Binary Rate Multiplier

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9 MOS inary Rate Multiplier Features igh Voltage Type (V Rating) ascadable in Multiples of its Set to Input and etect Output % Tested for Quiescent urrent at V V, V and V Parametric Ratings

1 9 MOS inary Rate Multiplier Features igh Voltage Type (V Rating) ascadable in Multiples of its Set to Input and etect Output % Tested for Quiescent urrent at V V, V and V Parametric Ratings Standardized Symmetrical Output haracteristics Maximum Input urrent of µ at V Over Full Package Temperature Range; n at V and + o Noise Margin (Over Full Package/Temperature Range) - V at V = V - V at V = V -.V at V = V Meets ll Requirements of JEE Tentative Standard No. 3, Standard Specifications for escription of Series MOS evices pplications Numerical ontrol Instrumentation igital Filtering Frequency Synthesis escription 9MS is a low power bit digital rate multiplier that provides an output pulse rate that is the clock-input-pulse rate multiplied by / times the binary input. For example, when the binary input number is 3, there will be 3 output pulses for every input pulses. This device may be used in Pinout conjunction with an up/down counter and control logic used to perform arithmetic operations (adds, subtract, divide, raise to a power), solve algebraic and differential equations, generate natural logarithms and trigometric functions, / and / conversions, and frequency division. For words of more than bits, 9MS devices may be cascaded in two different modes: an dd mode and a Multiply mode (see Figures 3 and ). In the dd mode some of the gaps left by the more significant unit at the count of are filled in by the less significant units. For example, when two units are cascaded in the dd mode and programmed to and 3, respectively, the more significant unit will have output pulses for every input pulses and the other unit will have 3 output pulses for every input pulses for a total of 3 + = 9 In the Multiply mode the fraction programmed into the first rate multiplier is multiplied by the fraction programmed into the second multiplier. Thus the output rate will be x 3 = 3 The 9MS has an internal synchronous bit counter which, together with one of the four binary input bits, produces pulse trains as shown in Figure. If more than one binary input bit is high, the resulting pulse train is a combination of the separate pulse trains as shown in Figure. The 9MS is supplied in these -lead outline packages: raze Seal IP Frit Seal IP eramic Flatpack W R P Functional iagram SET TO INIIT (RRY) 3 7 9MS TOP VIEW 3 V ER SE INIIT IN (RRY) STROE INIIT (RRY) IN SET TO ER 3 9 IT INRY OUNTER INRY RTE SEET INPUTS 3 RTE SEET OGI STROE SE RTE PUTS VSS 9 V = VSS = 7 INIIT (RRY)

2 Specifications 9MS bsolute Maximum Ratings Supply Voltage Range, (V) V to +V (Voltage Referenced to VSS Terminals) Input Voltage Range, ll Inputs V to V +.V Input urrent, ny One Input ±m Operating Temperature Range o to + o Package Types, F, K, Storage Temperature Range (TSTG) o to + o ead Temperature (uring Soldering) o t istance / ± /3 Inch (.9mm ±.79mm) from case for s Maximum Reliability Information Thermal Resistance θ ja θ jc eramic IP and FRIT Package..... o /W o /W Flatpack Package o /W o /W Maximum Package Power issipation (P) at + o For T = - o to + o (Package Type, F, K) mw For T = + o to + o (Package Type, F, K).....erate inearity at mw/ o to mw evice issipation per Output Transistor mw For T = Full Package Temperature Range (ll Package Types) Junction Temperature o TE. EETRI PERFORMNE RTERISTIS GROUP IMITS PRMETER SYMO ONITIONS (NOTE ) SUGROUPS TEMPERTURE MIN M UNITS Supply urrent I V = V, VIN = V or GN + o - µ + o - µ V = V, VIN = V or GN 3 - o - µ Input eakage urrent II VIN = V or GN V = + o - - n + o - - n V = V 3 - o - - n Input eakage urrent II VIN = V or GN V = + o - n + o - n V = V 3 - o - n Output Voltage VO V = V, No oad,, 3 + o, + o, - o - mv Output Voltage VO V = V, No oad (Note 3),, 3 + o, + o, - o.9 - V Output urrent (Sink) IO V = V, V =.V + o.3 - m Output urrent (Sink) IO V = V, V =.V + o. - m Output urrent (Sink) IO V = V, V =.V + o 3. - m Output urrent (Source) IO V = V, V =.V + o m Output urrent (Source) IO V = V, V =.V + o - -. m Output urrent (Source) IO V = V, V = 9.V + o - -. m Output urrent (Source) IO V = V, V = 3.V + o m N Threshold Voltage VNT V = V, ISS = -µ + o V P Threshold Voltage VPT VSS = V, I = µ + o.7. V Functional F V =.V, VIN = V or GN 7 + o VO > VO < V V = V, VIN = V or GN 7 + o V/ V/ V = V, VIN = V or GN + o V = 3V, VIN = V or GN - o Input Voltage ow (Note ) VI V = V, VO >.V, VO <.V,, 3 + o, + o, - o -. V Input Voltage igh (Note ) Input Voltage ow (Note ) Input Voltage igh (Note ) NOTES: VI V = V, VO >.V, VO <.V,, 3 + o, + o, - o 3. - V VI VI V = V, VO > 3.V, VO <.V V = V, VO > 3.V, VO <.V. ll voltages referenced to device GN, % testing being implemented.. Go/No Go test with limits applied to inputs.,, 3 + o, + o, - o - V,, 3 + o, + o, - o - V 3. For accuracy, voltage is measured differentially to V. imit is.v max.

3 Specifications 9MS TE. EETRI PERFORMNE RTERISTIS GROUP IMITS PRMETER SYMO ONITIONS (NOTES, ) SUGROUPS TEMPERTURE MIN M UNITS TP V = V, VIN = V or GN 9 + o - 3 ns lock to Output TP, + o, - o - ns TP V = V, VIN = V or GN 9 + o - 7 ns lear to Out TP, + o, - o - ns TP3 V = V, VIN = V or GN 9 + o - ns ascade to Out TP3, + o, - o - 3 ns Transition Time TT V = V, VIN = V or GN 9 + o - ns TT, + o, - o - 7 ns Maximum lock Input F V = V, VIN = V or GN 9 + o. - Mz Frequency, + o, - o.9 - Mz NOTES:. = pf, R = K, Input TR, TF < ns.. - o and + o limits guaranteed, % testing being implemented. TE 3. EETRI PERFORMNE RTERISTIS IMITS PRMETER SYMO ONITIONS NOTES TEMPERTURE MIN M UNITS Supply urrent I V = V, VIN = V or GN, - o, + o - µ + o - µ V = V, VIN = V or GN, - o, + o - µ + o - 3 µ V = V, VIN = V or GN, - o, + o - µ + o - µ Output Voltage VO V = V, No oad, + o, + o, - mv - o Output Voltage VO V = V, No oad, + o, + o, - o Output Voltage VO V = V, No oad, + o, + o, - o Output Voltage VO V = V, No oad, + o, + o, - o - mv.9 - V V Output urrent (Sink) IO V = V, V =.V, + o.3 - m - o. - m Output urrent (Sink) IO V = V, V =.V, + o.9 - m - o. - m Output urrent (Sink) IO V = V, V =.V, + o. - m - o. - m Output urrent (Source) IO V = V, V =.V, + o m - o - -. m Output urrent (Source) IO V = V, V =.V, + o - -. m - o - -. m Output urrent (Source) IO V = V, V = 9.V, + o m - o - -. m Output urrent (Source) IO V =V, V = 3.V, + o - -. m - o - -. m

4 Specifications 9MS Input Voltage ow VI V = V, VO > 9V, VO < V, + o, + o, - o Input Voltage igh VI V = V, VO > 9V, VO < V, + o, + o, - o lock to Out lock to Out lock to Inhibit Out lock to Inhibit Out lear to Out ascade to Out lock to 9 or Out Inhibit In to Inhibit Out Set to Out Transition Time Maximum lock Input Frequency Minimum Inhibit-In Setup Time Minimum Inhibit-In Removal Time Minimum lock Pulse Width Maximum lock Rise and Fall Time TE 3. EETRI PERFORMNE RTERISTIS (ontinued) PRMETER SYMO ONITIONS NOTES TEMPERTURE TP TP TP TP - 3 V +7 - V V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - 9 ns V = V,, 3 + o - ns V = V,, 3 + o - ns TP V = V,, 3 + o - 7 ns V = V,, 3 + o - 3 ns V = V,, 3 + o - ns TP V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - ns TP TP TP3 TP3 TP TP TP7 TP7 TP TP TT TT V = V,, 3 + o - 3 ns V = V,, 3 + o - ns V = V,, 3 + o - 9 ns V = V,, 3 + o - 7 ns V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - 3 ns V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - 3 ns V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - ns F V = V,, 3 + o. - Mz V = V,, 3 + o 3. - Mz TSU V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - ns TREM V = V,, 3 + o - ns V = V,, 3 + o - 3 ns V = V,, 3 + o - ns TW V = V,, 3 + o - 33 ns V = V,, 3 + o - 7 ns V = V,, 3 + o - ns TR TF IMITS UNITS V = V,, 3, + o - µs V = V,, 3, + o - µs V = V,, 3, + o - µs MIN M

5 Specifications 9MS Minimum Set Removal Time Minimum lear Removal Time TE 3. EETRI PERFORMNE RTERISTIS (ontinued) PRMETER SYMO ONITIONS NOTES TEMPERTURE TREM V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - ns TREM V = V,, 3 + o - ns V = V,, 3 + o - ns V = V,, 3 + o - 3 ns Minimum Set or lear TW V = V,, 3 + o - ns Pulse Width V = V,, 3 + o - 9 ns V = V,, 3 + o - ns Input apacitance IN ny Input, + o - 7. pf NOTES:. ll voltages referenced to device GN.. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. = pf, R = K, Input TR, TF < ns.. If more than one unit is cascaded, TR should be made less than or equal to the sumof the transition time and the fixed propagation delay of the output of the driving stage for the estimated capacitive load. MIN IMITS M UNITS TE. POST IRRITION EETRI PERFORMNE RTERISTIS IMITS PRMETER SYMO ONITIONS NOTES TEMPERTURE MIN M UNITS Supply urrent I V = V, VIN = V or GN, + o - µ N Threshold Voltage VNT V = V, ISS = -µ, + o V N Threshold Voltage VTN V = V, ISS = -µ, + o - ± V elta P Threshold Voltage VTP VSS = V, I = µ, + o.. V P Threshold Voltage VTP VSS = V, I = µ, + o - ± V elta Functional F V = V, VIN = V or GN V = 3V, VIN = V or GN + o VO > V/ Time TP TP NOTES:. ll voltages referenced to device GN.. = pf, R = K, Input TR, TF < ns. VO < V/ V = V,, 3, + o -.3 x + o imit 3. See Table for + o limit.. Read and Record V ns TE. URN-IN N IFE TEST ET PRMETERS + o PRMETER SYMO ET IMIT Supply urrent - MSI- I ±.µ Output urrent (Sink) IO ± % x Pre-Test Reading Output urrent (Source) IO ± % x Pre-Test Reading TE. PPIE SUGROUPS MI-ST-3 ONFORMNE GROUP METO GROUP SUGROUPS RE N REOR Initial Test (Pre urn-in) %, 7, 9 I, IO, IO

6 Specifications 9MS ONFORMNE GROUP TE. PPIE SUGROUPS MI-ST-3 METO GROUP SUGROUPS RE N REOR Interim Test (Post urn-in) %, 7, 9 I, IO, IO Interim Test (Post urn-in) %, 7, 9 I, IO, IO P (Note ) %, 7, 9, eltas Interim Test 3 (Post urn-in) %, 7, 9 I, IO, IO P (Note ) %, 7, 9, eltas Final Test %, 3,,,, Group Sample,, 3, 7,,, 9,, Group Subgroup - Sample,, 3, 7,,, 9,,, eltas Subgroups,, 3, 9,, Subgroup - Sample, 7, 9 Group Sample,, 3,,, 9 Subgroups, 3 NOTE:. % Parameteric, 3% Functional; umulative for Static and. TE 7. TOT OSE IRRITION MI-ST-3 TEST RE N REOR ONFORMNE GROUPS METO PRE-IRR POST-IRR PRE-IRR POST-IRR Group E Subgroup, 7, 9 Table, 9 Table TE. URN-IN N IRRITION TEST ONNETIONS FUNTION OPEN GROUN V 9V ± -.V Static urn-in, -7 -, - (Note ) Static urn-in (Note ) ynamic urn- In (Note ) Irradiation (Note ), -7 -, 9- OSITOR kz kz -,,,, - 3,, -7 9, -7 -, 9- NOTES:. Each pin except V and GN will have a series resistor of K ± %, V = V ±.V. Each pin except V and GN will have a series resistor of 7K ± %; Group E, Subgroup, sample size is dice/wafer, failures, V = V ±.V

7 9MS ogic iagram * * * *3 Qd Qb * STROE * SE *9 Qb ER *3 SET TO * INIIT IN * SYNRO- NOUS IT INRY OUNTER Qb Qb Qb Qb Qd Qd Qd Qb Qd INIIT 7 V * INPUTS RE PROTETE Y MOS PROTETION NETWORK VSS FIGURE. OGI IGRM

8 9MS TRUT TE INPUTS PUTS NUMER OF PUSES OR INPUT OGI EVE ( = ow; = igh; = on t are) NUMER OF PUSES OR PUT OGI EVE ( = ow; = igh) K IN IN STR S R SET IN * Output same as the first lines of this truth table (depending on values,,, ) ** epends on internal state of counter ** ** * ** MOST SIGNIFINT IGIT EST SIGNIFINT IGIT MOST SIGNIFINT IGIT EST SIGNIFINT IGIT RM RM RM RM IN IN IN IN S IN IN S IN IN S IN IN S IN IN ST ER S ST ER S ST ER S ST ER S FIGURE. TWO 9MS s SE IN TE MOE WIT PRESET NUMER OF = 9 FIGURE 3. TWO 9MS s SE IN TE MUTI- PY MOE WIT PRESET NUMER OF = 3

9 9MS OUNTER STTE (S) INPUT = * INPUT = INPUT = PUT WVE TRINS (TERM ) (MS) INPUT = * N PUT IT MY E FIE IN TIS OUNTER STTE Y ESS SIGNIFINT 9 SE IN TE MOE Typical Performance haracteristics FIGURE. TIMING IGRM PUT OW (SINK) URRENT (IO) (m) 3 MIENT TEMPERTURE (T ) = + o GTE-TO-SOURE VOTGE (VGS) = V V V PUT OW (SINK) URRENT (IO) (m) MIENT TEMPERTURE (T ) = + o GTE-TO-SOURE VOTGE (VGS) = V V V RIN-TO-SOURE VOTGE (VS) (V) FIGURE. TYPI PUT OW (SINK) URRENT RTERISTIS RIN-TO-SOURE VOTGE (VS) (V) FIGURE. MINIMUM PUT OW (SINK) URRENT RTERISTIS RIN-TO-SOURE VOTGE (VS) (V) MIENT TEMPERTURE (T ) = + o GTE-TO-SOURE VOTGE (VGS) = -V -V -V PUT IG (SOURE) URRENT (IO) (m) RIN-TO-SOURE VOTGE (VS) (V) MIENT TEMPERTURE (T ) = + o GTE-TO-SOURE VOTGE (VGS) = -V -V -V PUT IG (SOURE) URRENT (IO) (m) FIGURE 7. TYPI PUT IG (SOURE) URRENT RTERISTIS FIGURE. MINIMUM PUT IG (SOURE) URRENT RTERISTIS

9MS Typical Performance haracteristics (ontinued) PROPGTION EY TIME (tp, tp) (ns) MIENT TEMPERTURE (T ) = + o SUPPY VOTGE (V) = V V V O PITNE () (pf) TRNSITION TIME (tt, tt) (ns) MIENT TEMPERTURE (T

10 9MS Typical Performance haracteristics (ontinued) PROPGTION EY TIME (tp, tp) (ns) MIENT TEMPERTURE (T ) = + o SUPPY VOTGE (V) = V V V O PITNE () (pf) TRNSITION TIME (tt, tt) (ns) MIENT TEMPERTURE (T ) = + o SUPPY VOTGE (V) = V V V O PITNE () (pf) FIGURE 9. TYP. PROPGTION EY TIMES S FUNTION OF O PITNE ( OR STROE TO ) FIGURE. TYPI TRNSITION TIME S FUNTION OF O PITNE POWER ISSIPTION PER (P) (µw) 3 MIENT TEMPERTURE (T ) = + o SUPPY VOTGE (V) = V V V V = pf = pf 3 INPUT FREQUENY (fin) (kz) FIGURE. TYPI YNMI POWER ISSIPTION S FUNTION OF INPUT FREQUENY hip imensions and Pad ayout imensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils ( -3 inch). METIZTION: Thickness: kå kå,. PSSIVTION:.kÅ -.kå, Silane ON PS:. inches. inches MIN IE TIKNESS:.9 inches -. inches

DATASHEET CD40109BMS. Features. Description. Applications. Functional Diagram. Pinout. CMOS Quad Low-to-High Voltage Level Shifter

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