CD4070 CD4077 CMOS Quad Exclusive OR and Exclusive NOR Gates

Transcription

1 CD7 CD77 CMOS Quad Exclusive OR ad Exclusive NOR Gates Features High Voltage Tyes (V Ratig) Piouts CD7BMS TOP VIEW CD7BMS - Quad Exclusive OR Gate CD77BMS - Quad Exclusive NOR Gate Medium Seed Oeratio - tphl, tplh = s (Ty.) at =, CL = F V, ad V Parametric Ratigs A B K = C D C D 3 3 H G M = G H L = E F 9 F Stadardized, Symmetrical Outut Characteristics 7 8 E % Tested for Quiescet Curret at V Maximum Iut Curret of µa at 8V Over Full Package Temerature Rage; A at 8V ad + o C Noise Margi (Over Full Package/Temerature Rage) - V at = V - V at = -.V at = V Meets All Requiremets of JEDEC Tetative Stadard No. 3B, Stadard Secificatios for Descritio of B Series CMOS Devices A B K = C D C D 3 7 CD77BMS TOP VIEW 3 H G M = G H L = E F 9 F 8 E Alicatios Logical Comarators Parity Geerators ad Checkers Adders/Subtractors Descritio CD7BMS cotais four ideedet Exclusive OR gates. The CD77BMS cotais four ideedet Exclusive NOR gates. The CD7BMS ad CD77BMS rovide the system desiger with a meas for direct imlemetatio of the Exclusive OR ad Exclusive NOR fuctios, resectively. Fuctioal Diagram K = C D M = G H L = E F = 7 = A B C D E F G H CD7BMS 3 J K L M The CD7BMS ad CD77BMS are sulied i these lead outlie ackages: Braze Seal DIP HQ Frit Seal DIP HB Ceramic Flatack *HF H3W *CD7B Oly CD77B Oly K = C D M = G H L = E F A B C D E F J K L G H 3 M CD77BMS

2 Secificatios CD7BMS, CD77BMS Absolute Maximum Ratigs DC Suly Voltage Rage, () V to +V (Voltage Refereced to Termials) Iut Voltage Rage, All Iuts V to +.V DC Iut Curret, Ay Oe Iut ±mA Oeratig Temerature Rage to + o C Package Tyes D, F, K, H Storage Temerature Rage (TSTG) o C to + o C Lead Temerature (Durig Solderig) o C At Distace / ± /3 Ich (.9mm ±.79mm) from case for s Maximum Reliability Iformatio Thermal Resistace θ ja θ jc Ceramic DIP ad FRIT Package o C/W o C/W Flatack Package o C/W o C/W Maximum Package Power Dissiatio (PD) at + o C For TA = to + o C (Package Tye D, F, K) mw For TA = + o C to + o C (Package Tye D, F, K).....Derate Liearity at mw/ o C to mw Device Dissiatio er Outut Trasistor mw For TA = Full Package Temerature Rage (All Package Tyes) Juctio Temerature o C TABLE. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A PARAMETER SYMBOL CONDITIONS (NOTE ) SUBGROUPS TEMPERATURE MIN MAX UNITS Suly Curret IDD = V, VIN = or GND + o C - µa + o C - µa = 8V, VIN = or GND 3 - µa Iut Leakage Curret IIL VIN = or GND = + o C - - A + o C - - A = 8V A Iut Leakage Curret IIH VIN = or GND = + o C - A + o C - A = 8V 3 - A Outut Voltage VOL = V, No Load,, 3 + o C, + o C, - mv Outut Voltage VOH = V, No Load (Note 3),, 3 + o C, + o C,.9 - V Outut Curret (Sik) IOL = V, VOUT =.V + o C.3 - ma Outut Curret (Sik) IOL =, VOUT =.V + o C. - ma Outut Curret (Sik) IOL = V, VOUT =.V + o C 3. - ma Outut Curret (Source) IOHA = V, VOUT =.V + o C ma Outut Curret (Source) IOHB = V, VOUT =.V + o C ma Outut Curret (Source) IOH =, VOUT = 9.V + o C - -. ma Outut Curret (Source) IOH = V, VOUT = 3.V + o C ma N Threshold Voltage VNTH =, ISS = -µa + o C V P Threshold Voltage VPTH = V, IDD = µa + o C.7.8 V Fuctioal F =.8V, VIN = or GND 7 + o C VOH > VOL < V = V, VIN = or GND 7 + o C / / = 8V, VIN = or GND 8A + o C = 3V, VIN = or GND 8B Iut Voltage Low (Note ) VIL = V, VOH >.V, VOL <.V,, 3 + o C, + o C, -. V Iut Voltage High (Note ) Iut Voltage Low (Note ) Iut Voltage High (Note ) NOTES: VIH = V, VOH >.V, VOL <.V,, 3 + o C, + o C, 3. - V VIL VIH = V, VOH > 3.V, VOL <.V = V, VOH > 3.V, VOL <.V. All voltages refereced to device GND, % testig beig imlemeted.. Go/No Go test with limits alied to iuts.,, 3 + o C, + o C, - V,, 3 + o C, + o C, - V 3. For accuracy, voltage is measured differetially to. Limit is.v max.

3 Secificatios CD7BMS, CD77BMS TABLE. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A PARAMETER SYMBOL CONDITIONS (NOTES, ) SUBGROUPS TEMPERATURE MIN MAX UNITS Proagatio Delay TPHL = V, VIN = or GND 9 + o C - 8 s TPLH, + o C, s Trasitio Time TTHL = V, VIN = or GND 9 + o C - s TTLH, + o C, - 7 s NOTES:. CL = F, RL = K, Iut TR, TF < s.. ad + o C limits guarateed, % testig beig imlemeted. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Suly Curret IDD = V, VIN = or GND,, + o C - µa + o C - 3 µa =, VIN = or GND,, + o C - µa + o C - µa = V, VIN = or GND,, + o C - µa + o C - µa Outut Voltage VOL = V, No Load, + o C, + o C, - mv Outut Voltage VOL =, No Load, + o C, + o C, Outut Voltage VOH = V, No Load, + o C, + o C, Outut Voltage VOH =, No Load, + o C, + o C, - mv.9 - V V Outut Curret (Sik) IOL = V, VOUT =.V, + o C.3 - ma. - ma Outut Curret (Sik) IOL =, VOUT =.V, + o C.9 - ma. - ma Outut Curret (Sik) IOL = V, VOUT =.V, + o C. - ma. - ma Outut Curret (Source) IOHA = V, VOUT =.V, + o C ma - -. ma Outut Curret (Source) IOHB = V, VOUT =.V, + o C - -. ma - -. ma Outut Curret (Source) IOH =, VOUT = 9.V, + o C ma - -. ma Outut Curret (Source) IOH =V, VOUT = 3.V, + o C - -. ma - -. ma Iut Voltage Low VIL =, VOH > 9V, VOL < V, + o C, + o C, - 3 V Iut Voltage High VIH =, VOH > 9V, VOL < V, + o C, + o C, 7 - V

4 Secificatios CD7BMS, CD77BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Cotiued) PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE Proagatio Delay TPHL TPLH =,, 3 + o C - 3 s = V,, 3 + o C - s Trasitio Time TTHL =,, 3 + o C - s TTLH = V,, 3 + o C - 8 s Iut Caacitace CIN Ay Iut, + o C - 7. F NOTES:. All voltages refereced to device GND.. The arameters listed o Table 3 are cotrolled via desig or rocess ad are ot directly tested. These arameters are characterized o iitial desig release ad uo desig chages which would affect these characteristics. 3. CL = F, RL = K, Iut TR, TF < s. MIN MAX UNITS TABLE. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Suly Curret IDD = V, VIN = or GND, + o C - 7. µa N Threshold Voltage VNTH =, ISS = -µa, + o C V N Threshold Voltage VTN =, ISS = -µa, + o C - ± V Delta P Threshold Voltage VTP = V, IDD = µa, + o C..8 V P Threshold Voltage VTP = V, IDD = µa, + o C - ± V Delta Fuctioal F = 8V, VIN = or GND = 3V, VIN = or GND + o C VOH > / Proagatio Delay Time TPHL TPLH NOTES:. All voltages refereced to device GND.. CL = F, RL = K, Iut TR, TF < s. VOL < / = V,, 3, + o C -.3 x + o C Limit 3. See Table for + o C limit.. Read ad Record V s TABLE. BURN-IN AND LIFE TEST DELTA PARAMETERS + O C PARAMETER SYMBOL DELTA LIMIT Suly Curret - MSI- IDD ±.µa Outut Curret (Sik) IOL ± % x Pre-Test Readig Outut Curret (Source) IOHA ± % x Pre-Test Readig TABLE. APPLICABLE SUBGROUPS CONFORMANCE GROUP MIL-STD-883 METHOD GROUP A SUBGROUPS READ AND RECORD Iitial Test (Pre Bur-I) %, 7, 9 IDD, IOL, IOHA Iterim Test (Post Bur-I) %, 7, 9 IDD, IOL, IOHA Iterim Test (Post Bur-I) %, 7, 9 IDD, IOL, IOHA PDA (Note ) %, 7, 9, Deltas Iterim Test 3 (Post Bur-I) %, 7, 9 IDD, IOL, IOHA

5 Secificatios CD7BMS, CD77BMS CONFORMANCE GROUP TABLE. APPLICABLE SUBGROUPS (Cotiued) MIL-STD-883 METHOD GROUP A SUBGROUPS READ AND RECORD PDA (Note ) %, 7, 9, Deltas Fial Test %, 3, 8A, 8B,, Grou A Samle,, 3, 7, 8A, 8B, 9,, Grou B Subgrou B- Samle,, 3, 7, 8A, 8B, 9,,, Deltas Subgrous,, 3, 9,, Subgrou B- Samle, 7, 9 Grou D Samle,, 3, 8A, 8B, 9 Subgrous, 3 NOTE:. % Parameteric, 3% Fuctioal; Cumulative for Static ad. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 TEST READ AND RECORD CONFORMANCE GROUPS METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD Grou E Subgrou, 7, 9 Table, 9 Table TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS FUNCTION OPEN GROUND 9V ± -.V Static Bur-I 3,,,,, -9,, 3 Note Static Bur-I Note Dyamic Bur- I Note Irradiatio Note NOTE: 3,,, 7,,,, 8, 9, - OSCILLATOR khz khz - 7 3,,,,, 8,,, 9, 3 3,,, 7,,,, 8, 9, -. Each i excet ad GND will have a series resistor of K ± %, = 8V ±.V. Each i excet ad GND will have a series resistor of 7K ± %; Grou E, Subgrou, samle size is dice/wafer, failures, = ±.V

6 CD7BMS, CD77BMS Schematics B* (, 9, ) A* (, 8, 3) J 3 (,, ) TRUTH TABLE CD7BMS OF GATES A B J = High Level = Low Level * ALL INPUTS PROTECTED BY CMOS PROTECTION NETWORK FIGURE. SCHEMATIC DIAGRAM FOR CD7BMS ( OF IDENTICAL GATES) B* (, 9, ) A* (, 8, 3) J 3 (,, ) TRUTH TABLE CD77BMS OF GATES A B J = High Level = Low Level * ALL INPUTS PROTECTED BY CMOS PROTECTION NETWORK FIGURE. SCHEMATIC DIAGRAM FOR CD77BMS ( OF IDENTICAL GATES)

7 Tyical Performace Characteristics CD7BMS, CD77BMS OUTPUT LOW (SINK) CURRENT (IOL) (ma) 3 AMBIENT TEMPERATURE (T A ) = + o C GATE-TO-SOURCE VOLTAGE (VGS) = V V OUTPUT LOW (SINK) CURRENT (IOL) (ma) AMBIENT TEMPERATURE (T A ) = + o C GATE-TO-SOURCE VOLTAGE (VGS) = V V DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) AMBIENT TEMPERATURE (T A ) = + o C GATE-TO-SOURCE VOLTAGE (VGS) = -V - -V OUTPUT HIGH (SOURCE) CURRENT (IOH) (ma) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) AMBIENT TEMPERATURE (T A ) = + o C GATE-TO-SOURCE VOLTAGE (VGS) = -V - -V OUTPUT HIGH (SOURCE) CURRENT (IOH) (ma) FIGURE. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS TRANSITION TIME (tthl, ttlh) (s) AMBIENT TEMPERATURE (T A ) = + o C SUPPLY VOLTAGE () = V V 8 LOAD CAPACITANCE (CL) (F) PROPAGATION DELAY TIME (tphl, tplh) (s) 3 AMBIENT TEMPERATURE (T A ) = + o C SUPPLY VOLTAGE () = V V 8 LOAD CAPACITANCE (CL) (F) FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE

8 CD7BMS, CD77BMS Tyical Performace Characteristics (Cotiued) PROPAGATION DELAY TIME (tphl, tplh) (s) 3 AMBIENT TEMPERATURE (T A ) = + o C LOAD CAPACITANCE (CL) = F SUPPLY VOLTAGE () (V) FIGURE 9. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF SUPPLY VOLTAGE POWER DISSIPATION PER GATE (PD) (µw) 3 - AMBIENT TEMPERATURE (T A ) = + o C SUPPLY VOLTAGE () = V INPUT FREQUENCY (fi) (khz) FIGURE. TYPICAL DYNAMIC POWER DISSIPATION AS A FUNCTION OF INPUT FREQUENCY V LOAD CAPACITANCE CL = F CL = F Chi Dimesios ad Pad Layout CD77BMSH Dimesios ad ad layout for CD7BMSH are idetical Dimesios i arethesis are i millimeters ad are derived from the basic ich dimesios as idicated. Grid graduatios are i mils ( -3 ich). METALLIZATION: PASSIVATION: BOND PADS: DIE THICKNESS: Thickess: kå kå, AL..kÅ -.kå, Silae. iches X. iches MIN.98 iches -.8 iches