DATASHEET CD4014BMS, CD4021BMS. Description. Features. Applications: Functional Diagram. Pinout. CMOS 8-Stage Static Shift Registers
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1 ATASHEET C1BMS, C1BMS CMOS -Stage Static Shift Registers Features High Voltage Tyes (V Ratig) Medium Seed Oeratio 1MHz (Ty.) Clock Rate at V-VSS = V Fully Static Oeratio Master-Slave Fli-Flos lus Outut Bufferig ad Cotrol Gatig % Tested for uiescet Curret at V Maximum Iut Curret of 1 A at 1V Over Full ackage Temerature Rage; A at 1V ad +5 o C Noise Margi (Full ackage Temerature Rage) 1V at V = 5V V at V = V.5V at V = 15V Stadardized Symmetrical Outut Characteristics 5V, V ad 15V arametric Ratigs Meets All Requiremets of JEEC Tetative Stadard No. 13B, Stadard Secificatios for escritio of `B' Series CMOS evices Alicatios: arallel Iut/Serial Outut ata ueueig arallel to Serial ata Coversio Geeral urose Register iout escritio FN39 Rev. ecember 199 C1BMS -Sychroous arallel or Serial Iut/Serial Outut C1BMS -Asychroous arallel Iut or Sychroous Serial Iut/Serial Outut C1BMS ad C1BMS series tyes are -stage arallel- or serial-iut/serial outut registers havig commo OCK ad ARALLEL/SERIAL CONTROL iuts, a sigle SERIAL data iut, ad idividual arallel JAM iuts to each register stage. Each register stage is a -tye, master-slave fli-flo. I additio to a outut from stage, oututs are also available from stages ad 7. arallel as well as serial etry is made ito the register sychroously with the ositive clock lie trasitio i the C1BMS. I the C1BMS serial etry is sychroous with the clock but arallel etry is asychroous. I both tyes, etry is cotrolled by the ARALLEL/SERIAL CONTROL iut. Whe the ARALLEL/SERIAL CONTROL iut is low, data is serially shifted ito the -stage register sychroously with the ositive trasitio of the clock lie. Whe the ARAL- LEL/SERIAL CONTROL iut is high, data is jammed ito the - stage register via the arallel iut lies ad sychroous with the ositive trasitio of the clock lie. I the C1BMS, the OCK iut of the iteral stage is forced whe asychroous arallel etry is made. Register exasio usig multile ackages is ermitted. The C1BMS ad C1BMS are sulied i these 1 lead outlie ackages: Braze Seal I Frit Seal I Ceramic Flatack HT H1F HW Fuctioal iagram I V I-7 I- AR. IN V I- I I-5 7 ARALLEL/SERIAL CONTROL 9 I- I-1 VSS 7 11 SERIAL IN OCK 9 ARALLEL/SERIAL CONTROL SERIAL IN OCK BUFFERE OUT VSS FN39 Rev. age 1 of 9 ecember 199
2 C1BMS, C1BMS Absolute Maximum Ratigs C Suly Voltage Rage, (V) V to +V (Voltage Refereced to VSS Termials) Iut Voltage Rage, All Iuts V to V +.5V C Iut Curret, Ay Oe Iut ma Oeratig Temerature Rage to +15 o C ackage Tyes, F, K, H Storage Temerature Rage (TSTG) o C to +15 o C Lead Temerature (urig Solderig) o C At istace 1/1 1/3 Ich (1.59mm.79mm) from case for s Maximum Reliability Iformatio Thermal Resistace ja jc Ceramic I ad FRIT ackage..... o C/W o C/W Flatack ackage o C/W o C/W Maximum ackage ower issiatio () at +15 o C For TA = to + o C (ackage Tye, F, K) mW For TA = + o C to +15 o C (ackage Tye, F, K)..... erate Liearity at 1mW/ o C to mw evice issiatio er Outut Trasistor mw For TA = Full ackage Temerature Rage (All ackage Tyes) Juctio Temerature o C TABLE 1. C ELECTRICAL ERFORMANCE CHARACTERISTICS GROU A ARAMETER SYMBOL CONITIONS (NOTE 1) SUBGROU TEMERATURE MIN MAX UNITS Suly Curret I V = V, VIN = V or GN 1 +5 o C - A +15 o C - A V = 1V, VIN = V or GN 3 - A Iut Leakage Curret IIL VIN = V or GN V = 1 +5 o C - - A +15 o C - - A V = 1V A Iut Leakage Curret IIH VIN = V or GN V = 1 +5 o C - A +15 o C - A V = 1V 3 - A Outut Voltage VOL15 V = 15V, No Load 1,, 3 +5 o C, +15 o C, - 5 mv Outut Voltage VOH15 V = 15V, No Load (Note 3) 1,, 3 +5 o C, +15 o C, V Outut Curret (Sik) IOL5 V = 5V, VOUT =.V 1 +5 o C.53 - ma Outut Curret (Sik) IOL V = V, VOUT =.5V 1 +5 o C 1. - ma Outut Curret (Sik) IOL15 V = 15V, VOUT = 1.5V 1 +5 o C ma Outut Curret (Source) IOH5A V = 5V, VOUT =.V 1 +5 o C ma Outut Curret (Source) IOH5B V = 5V, VOUT =.5V 1 +5 o C ma Outut Curret (Source) IOH V = V, VOUT = 9.5V 1 +5 o C ma Outut Curret (Source) IOH15 V = 15V, VOUT = 13.5V 1 +5 o C ma N Threshold Voltage VNTH V = V, ISS = - A 1 +5 o C V Threshold Voltage VTH VSS = V, I = A 1 +5 o C.7. V Fuctioal F V =.V, VIN = V or GN 7 +5 o C VOH > VOL < V V = V, VIN = V or GN 7 +5 o C V/ V/ V = 1V, VIN = V or GN A +15 o C V = 3V, VIN = V or GN B Iut Voltage Low (Note ) VIL V = 5V, VOH >.5V, VOL <.5V 1,, 3 +5 o C, +15 o C, V Iut Voltage High (Note ) Iut Voltage Low (Note ) Iut Voltage High (Note ) NOTES: VIH V = 5V, VOH >.5V, VOL <.5V 1,, 3 +5 o C, +15 o C, V VIL VIH V = 15V, VOH > 13.5V, VOL < 1.5V V = 15V, VOH > 13.5V, VOL < 1.5V 1. All voltages refereced to device GN, % testig beig imlemeted.. Go/No Go test with limits alied to iuts. 1,, 3 +5 o C, +15 o C, - V 1,, 3 +5 o C, +15 o C, 11 - V 3. For accuracy, voltage is measured differetially to V. Limit is.5v max. FN39 Rev. age of 9 ecember 199
3 C1BMS, C1BMS TABLE. AC ELECTRICAL ERFORMANCE CHARACTERISTICS GROU A ARAMETER SYMBOL CONITIONS (NOTE 1, ) SUBGROU TEMERATURE MIN MAX UNITS roagatio elay THL V = 5V, VIN = V or GN 9 +5 o C - 3 s TLH, o C, - 3 s Trasitio Time TTHL V = 5V, VIN = V or GN 9 +5 o C - s TTLH, o C, - 7 s Maximum Clock Iut F V = 5V, VIN = V or GN 9 +5 o C 3 - MHz Frequecy, o C,. - MHz NOTES: 1. = 5F, RL = K, Iut TR, TF < s.. ad +15 o C limits guarateed, % testig beig imlemeted. TABLE 3. ELECTRICAL ERFORMANCE CHARACTERISTICS ARAMETER SYMBOL CONITIONS NOTES TEMERATURE MIN MAX UNITS Suly Curret I V = 5V, VIN = V or GN 1,, +5 o C - 5 A +15 o C - 15 A V = V, VIN = V or GN 1,, +5 o C - A +15 o C - 3 A V = 15V, VIN = V or GN 1,, +5 o C - A +15 o C - A Outut Voltage VOL V = 5V, No Load 1, +5 o C, +15 o C, - 5 mv Outut Voltage VOL V = V, No Load 1, +5 o C, +15 o C, Outut Voltage VOH V = 5V, No Load 1, +5 o C, +15 o C, Outut Voltage VOH V = V, No Load 1, +5 o C, +15 o C, - 5 mv.95 - V V Outut Curret (Sik) IOL5 V = 5V, VOUT =.V 1, +15 o C.3 - ma. - ma Outut Curret (Sik) IOL V = V, VOUT =.5V 1, +15 o C.9 - ma 1. - ma Outut Curret (Sik) IOL15 V = 15V, VOUT = 1.5V 1, +15 o C. - ma. - ma Outut Curret (Source) IOH5A V = 5V, VOUT =.V 1, +15 o C ma - -. ma Outut Curret (Source) IOH5B V = 5V, VOUT =.5V 1, +15 o C ma - -. ma Outut Curret (Source) IOH V = V, VOUT = 9.5V 1, +15 o C ma ma Outut Curret (Source) IOH15 V =15V, VOUT = 13.5V 1, +15 o C - -. ma - -. ma Iut Voltage Low VIL V = V, VOH > 9V, VOL < 1V 1, +5 o C, +15 o C, - 3 V Iut Voltage High VIH V = V, VOH > 9V, VOL < 1V 1, +5 o C, +15 o C, 7 - V FN39 Rev. age 3 of 9 ecember 199
4 C1BMS, C1BMS roagatio elay Trasitio Time Maximum Clock Iut Frequecy Clock Rise ad Fall Time (Note ) Miimum Hold Time Serial I, arallel I arallel/serial Cotrol Miimum Clock ulse Width Miimum Setu Time Serial Iut (Ref. to ) Miimum Setu Time arallel Iuts C1BMS (Ref. to ) Miimum Setu Time arallel Iuts C1BMS (Ref. to /S) Miimum Setu Time arallel/serial Cotrol C1BMS (Ref. to ) Miimum /S ulse Width (C1BMS) TABLE 3. ELECTRICAL ERFORMANCE CHARACTERISTICS (Cotiued) ARAMETER SYMBOL CONITIONS NOTES TEMERATURE THL TLH TTHL TTLH V = V 1,, 3 +5 o C - 1 s V = 15V 1,, 3 +5 o C - s V = V 1,, 3 +5 o C - s V = 15V 1,, 3 +5 o C - s F V = V 1,, 3 +5 o C - MHz V = 15V 1,, 3 +5 o C.5 - MHz TR TF V = 5V 3, 5 +5 o C - 15 s V = V 3, 5 +5 o C - 15 s V = 15V 3, 5 +5 o C - 15 s TH V = 5V 1,, 3 +5 o C - s V = V 1,, 3 +5 o C - s V = 15V 1,, 3 +5 o C - s TW V = 5V 1,, 3 +5 o C - 1 s V = V 1,, 3 +5 o C - s V = 15V 1,, 3 +5 o C - 5 s TS V = 5V, 3 +5 o C - s V = V, 3 +5 o C - s V = 15V, 3 +5 o C - s TS V = 5V, 3 +5 o C - s V = V, 3 +5 o C - 5 s V = 15V, 3 +5 o C - s TS V = 5V, 3 +5 o C - 5 s V = V, 3 +5 o C - 3 s V = 15V, 3 +5 o C - s TS V = 5V, 3 +5 o C - 1 s V = V, 3 +5 o C - s V = 15V, 3 +5 o C - s TWH V = 5V, 3 +5 o C - 1 s V = V, 3 +5 o C - s V = 15V, 3 +5 o C - 5 s Miimum /S Removal TREM V = 5V, 3 +5 o C - s Time C1BMS (Ref. to ) V = V, 3 +5 o C - 1 s V = 15V, 3 +5 o C - s Iut Caacitace CIN Ay Iut 1, +5 o C F NOTES: 1. All voltages refereced to device GN.. The arameters listed o Table 3 are cotrolled via desig or rocess ad are ot directly tested. These arameters are characterized o iitial desig release ad uo desig chages which would affect these characteristics. 3. = 5F, RL = K, Iut TR, TF < s.. If more tha oe uit is cascaded, TR should be made less tha or equal to the sum of the trasitio time ad the fixed roagatio delay of the outut of the drivig stage for the estimated caacitive load. MIN MAX UNITS FN39 Rev. age of 9 ecember 199
5 C1BMS, C1BMS TABLE. OST IRRAIATION ELECTRICAL ERFORMANCE CHARACTERISTICS ARAMETER SYMBOL CONITIONS NOTES TEMERATURE MIN MAX UNITS Suly Curret I V = V, VIN = V or GN 1, +5 o C - 5 A N Threshold Voltage VNTH V = V, ISS = - A 1, +5 o C V N Threshold Voltage VNTH V = V, ISS = - A 1, +5 o C - 1 V elta Threshold Voltage VTH VSS = V, I = A 1, +5 o C.. V Threshold Voltage VTH VSS = V, I = A 1, +5 o C - 1 V elta Fuctioal F V = 1V, VIN = V or GN V = 3V, VIN = V or GN 1 +5 o C VOH > V/ roagatio elay Time THL TLH NOTES: 1. All voltages refereced to device GN.. = 5F, RL = K, Iut TR, TF < s. VOL < V/ V = 5V 1,, 3, +5 o C x +5 o C Limit 3. See Table for +5 o C limit.. Read ad Record V s TABLE 5. BURN-IN AN LIFE TEST ELTA ARAMETERS +5 O C ARAMETER SYMBOL ELTA LIMIT Suly Curret - MSI- I 1. A Outut Curret (Sik) IOL5 % x re-test Readig Outut Curret (Source) IOH5A % x re-test Readig TABLE. ALICABLE SUBGROU CONFORMANCE GROU MIL-ST-3 METHO GROU A SUBGROU REA AN RECOR Iitial Test (re Bur-I) % 5 1, 7, 9 I, IOL5, IOH5A Iterim Test 1 (ost Bur-I) % 5 1, 7, 9 I, IOL5, IOH5A Iterim Test (ost Bur-I) % 5 1, 7, 9 I, IOL5, IOH5A A (Note 1) % 5 1, 7, 9, eltas Iterim Test 3 (ost Bur-I) % 5 1, 7, 9 I, IOL5, IOH5A A (Note 1) % 5 1, 7, 9, eltas Fial Test % 5, 3, A, B,, 11 Grou A Samle 55 1,, 3, 7, A, B, 9,, 11 Grou B Subgrou B-5 Samle 55 1,, 3, 7, A, B, 9,, 11, eltas Subgrous 1,, 3, 9,, 11 Subgrou B- Samle 55 1, 7, 9 Grou Samle 55 1,, 3, A, B, 9 Subgrous 1, 3 NOTE: 1. 5% arameteric, 3% Fuctioal; Cumulative for Static 1 ad. TABLE 7. TOTAL OSE IRRAIATION MIL-ST-3 TEST REA AN RECOR CONFORMANCE GROU METHO RE-IRRA OST-IRRA RE-IRRA OST-IRRA Grou E Subgrou 55 1, 7, 9 Table 1, 9 Table TABLE. BURN-IN AN IRRAIATION TEST CONNECTIONS FUNCTION OEN GROUN V 9V -.5V Static Bur-I 1 (Note 1), 3, 1 1,-11, OSCILLATOR 5kHz 5kHz FN39 Rev. age 5 of 9 ecember 199
6 C1BMS, C1BMS TABLE. BURN-IN AN IRRAIATION TEST CONNECTIONS (Cotiued) OSCILLATOR FUNCTION OEN GROUN V 9V -.5V Static Bur-I (Note 1), 3, 1 1, -7, 9-11, 13-5kHz 5kHz yamic Bur-I (Note 1) - 1, -9, , 3, 1 11 Irradiatio (Note ), 3, 1 1, -7, 9-11, 13-1 NOTE: 1. Each i excet V ad GN will have a series resistor of K 5%, V = 1V.5V. Each i excet V ad GN will have a series resistor of 7K 5%; Grou E, Subgrou, samle size is dice/wafer, failures, V = V.5V Logic iagram SERIAL INUT 11 OCK ARALLEL/SERIAL CONTROL 9 V C 7 3 ALL INUTS ARE ROTECTE BY CMOS ROTECTION NETWORK VSS FIGURE 1. C1BM LOGIC IAGRAM TRUTH TABLE - C1BMS SERIAL INUT ARALLEL/SERIAL CONTROL I-1 I- 1 (INTERNAL) X 1 X X X X X -1 1 X X 1-1 X X X X 1 NC X = o t Care Case NC = No Chage FN39 Rev. age of 9 ecember 199
7 C1BMS, C1BMS SERIAL INUT 11 OCK 9 ARALLEL/ SERIAL CONTROL 7 3 V ALL INUTS ARE ROTECTE BY CMOS ROTECTION NETWORK VSS FIGURE. C1BMS LOGIC IAGRAM TRUTH TABLE - C1BMS SERIAL INUT ARALLEL/SERIAL CONTROL I-1 I- 1 (INTERNAL) X X 1 X X X X X X X X -1 1 X X 1-1 X X X 1 NC X = o t Care Case FN39 Rev. age 7 of 9 ecember 199
8 C1BMS, C1BMS Tyical erformace Characteristics OUTUT LOW (SINK) CURRENT (IOL) (ma) AMBIENT TEMERATURE (T A ) = +5 o C GATE-TO-SOURCE VOLTAGE (VGS) = 15V V 5V OUTUT LOW (SINK) CURRENT (IOL) (ma) AMBIENT TEMERATURE (T A ) = +5 o C GATE-TO-SOURCE VOLTAGE (VGS) = 15V V 5V 5 15 RAIN-TO-SOURCE VOLTAGE (VS) (V) FIGURE 3. TYICAL OUTUT LOW (SINK) CURRENT CHARACTERISTICS 5 15 RAIN-TO-SOURCE VOLTAGE (VS) (V) FIGURE. MINIMUM OUTUT LOW (SINK) CURRENT CHARACTERISTICS RAIN-TO-SOURCE VOLTAGE (VS) (V) AMBIENT TEMERATURE (T A ) = +5 o C GATE-TO-SOURCE VOLTAGE (VGS) = -5V -V -15V OUTUT HIGH (SOURCE) CURRENT (IOH) (ma) RAIN-TO-SOURCE VOLTAGE (VS) (V) AMBIENT TEMERATURE (T A ) = +5 o C GATE-TO-SOURCE VOLTAGE (VGS) = -5V -V -15V OUTUT HIGH (SOURCE) CURRENT (IOH) (ma) FIGURE 5. TYICAL OUTUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE. MINIMUM OUTUT HIGH (SOURCE) CURRENT CHARACTERISTICS TRANSITION TIME (tthl, ttlh) (s) 15 5 AMBIENT TEMERATURE (T A ) = +5 o C SULY VOLTAGE (V) = 5V LOA CAACITANCE () (F) V 15V FIGURE 7. TYICAL TRANSITION TIME AS A FUNCTION OF LOA CAACITANCE ROAGATION ELAY TIME (tthl, ttlh) (s) 3 AMBIENT TEMERATURE (T A ) = +5 o C SULY VOLTAGE (V) = 5V CAACITANCE () (F) V 15V FIGURE. TYICAL ROAGATION ELAY TIME AS A FUNCTION OF LOA CAACITANCE FN39 Rev. age of 9 ecember 199
9 C1BMS, C1BMS Tyical erformace Characteristics (Cotiued) 5 OWER ISSIATION () ( W) 3 1 SULY VOLTAGE (V) = 15V 5V V V = 5F = 15F AMBIENT TEMERATURE (T A ) = +5 o C 3 5 OCK INUT FREUENCY (f) (khz) FIGURE 9. TYICAL OWER ISSIATION AS A FUNCTION OF FREUENCY Chi imesios ad ad Layouts METALLIZATION: Thickess: 11kÅ 1kÅ, AL. ASSIVATION: BON AS:.kÅ - 15.kÅ, Silae. iches X. iches MIN IE THICKNESS:.19 iches -.1 iches imesios i aretheses are i millimeters ad are derived from the basic ich dimesios as idicated. Grid graduatios are i mils ( -3 ich) Coyright Itersil Americas LLC All Rights Reserved. All trademarks ad registered trademarks are the roerty of their resective owers. For additioal roducts, see Itersil roducts are maufactured, assembled ad tested utilizig ISO91 quality systems as oted i the quality certificatios foud at Itersil roducts are sold by descritio oly. Itersil may modify the circuit desig ad/or secificatios of roducts at ay time without otice, rovided that such modificatio does ot, i Itersil's sole judgmet, affect the form, fit or fuctio of the roduct. Accordigly, the reader is cautioed to verify that datasheets are curret before lacig orders. Iformatio furished by Itersil is believed to be accurate ad reliable. However, o resosibility is assumed by Itersil or its subsidiaries for its use; or for ay ifrigemets of atets or other rights of third arties which may result from its use. No licese is grated by imlicatio or otherwise uder ay atet or atet rights of Itersil or its subsidiaries. For iformatio regardig Itersil Cororatio ad its roducts, see FN39 Rev. age 9 of 9 ecember 199
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