CD40104BMS, CD40194BMS CMOS 4-Bit Bidirectional Universal Shift Register

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1 ecember 199 Features High Voltage Tye (V Ratig) Medium Seed f = 1MHz (ty.) at V = 1V Fully Static Oeratio Sychroous Parallel or Serial Oeratio Three State Oututs (C1MS) Asychroous Master Reset (C19MS) 5V, 1V ad 15V Parametric Ratigs Stadardized Symmetrical Outut Characteristics Meets All Requiremets of JC Tetative Stadard No. 13, Stadard Secificatios for escritio of Series CMOS evices Alicatios Arithmetic Uit us Registers Serial/Parallel Coversios eeral Purose Register for us Orgaized Systems eeral Purose Registers escritio The C1MS is a uiversal shift register featurig arallel iuts, arallel oututs, SHIFT RIHT ad SHIFT LFT serial iuts, ad a high imedace third outut state allowig the device to be used i bus orgaized systems. I the arallel load mode (S ad S1 are high), data is loaded ito the associated fli-flo ad aears at the outut after the ositive trasitio of the OCK iut. urig loadig, serial data flow is ihibited. Shift right ad shift left are accomlished sychroously o the ositive clock edge with serial data etered at the SHIFT RIHT ad SHIFT LFT serial iuts, resectively. Clearig the register is accomlished by settig both mode cotrols low ad clockig the register. Whe the outut eable iut is low, all oututs assume the high imedace state. The C19MS is a uiversal shift register featurig arallel iuts, arallel oututs SHIFT RIHT ad SHIFT LFT serial iuts, ad a direct overridig clear iut. I the arallel load mode (S ad S1 are high), data is loaded ito the associated fli-flo ad aears at the outut after the ositive trasitio of the OCK iut. urig loadig, serial data flow is ihibited. Shift right ad shift left are accomlished sychroously o the ositive clock edge with data etered at the SHIFT RIHT ad SHIFT LFT serial iuts, resectively. Clockig of the register is ihibited whe both mode cotrol iuts are low. Whe low, the RST iut resets all stages ad forces all oututs low. The C19MS is similar to idustry tyes 319 ad MC19. The C1MS ad C19MS series tyes are sulied i these 1 lead outlie ackages raze Seal IP *HNX, HW Frit Seal IP *H1L, HIF Ceramic Flatack HW * C1 Oly C19 Oly Piouts C1MS, C19MS CMOS -it idirectioal Uiversal Shift Register OUTPUT NAL SHIFT RIHT IN 1 3 SHIFT LVL IN RST SHIFT RIHT IN 1 3 SHIFT LVL IN Fuctioal iagrams OUTPUT NAL C1MS TOP VIW C19MS TOP VIW C1MS 1 3 SHIFT LFT IN SHIFT RIHT IN S S1 MO SLCT OCK C19MS 1 3 SHIFT LFT IN SHIFT RIHT IN S S1 MO SLCT RST OCK V OCK 1 SLCT 1 9 SLCT 1 V OCK 1 SLCT 1 9 SLCT V = 1 = V = 1 = 8 CAUTION: These devices are sesitive to electrostatic discharge; follow roer IC Hadlig Procedures INTRSIL or Coyright Itersil Cororatio File Number 335

2 Secificatios C1MS, C19MS Absolute Maximum Ratigs C Suly Voltage Rage, (V) V to +V (Voltage Refereced to Termials) Iut Voltage Rage, All Iuts V to V +.5V C Iut Curret, Ay Oe Iut ±1mA Oeratig Temerature Rage to +15 o C Package Tyes, F, K, H Storage Temerature Rage (TST) o C to +15 o C Lead Temerature (urig Solderig) o C At istace 1/1 ± 1/3 Ich (1.59mm ±.79mm) from case for 1s Maximum Reliability Iformatio Thermal Resistace θ ja θ jc Ceramic IP ad FRIT Package o C/W o C/W Flatack Package o C/W o C/W Maximum Package Power issiatio (P) at +15 o C For T A = to +1 o C (Package Tye, F, K) mW For T A = +1 o C to +15 o C (Package Tye, F, K)......erate Liearity at 1mW/ o C to mw evice issiatio er Outut Trasistor mW For T A = Full Package Temerature Rage (All Package Tyes) Juctio Temerature o C TAL 1. C LCTRICAL PRFORMANC CHARACTRISTICS ROUP A PARAMTR SYMOL CONITIONS (NOT 1) SUROUPS TMPRATUR MIN MAX UNITS Suly Curret I V = V, VIN = V or N 1 +5 o C - 1 µa +15 o C - 1 µa V = 18V, VIN = V or N 3-1 µa Iut Leakage Curret IIL VIN = V or N V = V 1 +5 o C -1 - A +15 o C -1 - A V = 18V A Iut Leakage Curret IIH VIN = V or N V = V 1 +5 o C - 1 A +15 o C - 1 A V = 18V 3-1 A Outut Voltage VOL15 V = 15V, No Load 1,, 3 +5 o C, +15 o C, - 5 mv Outut Voltage VOH15 V = 15V, No Load (Note 3) 1,, 3 +5 o C, +15 o C, V Outut Curret (Sik) IOL5 V = 5V, VOUT =.V 1 +5 o C.53 - ma Outut Curret (Sik) IOL1 V = 1V, VOUT =.5V 1 +5 o C 1. - ma Outut Curret (Sik) IOL15 V = 15V, VOUT = 1.5V 1 +5 o C ma Outut Curret (Source) IOH5A V = 5V, VOUT =.V 1 +5 o C ma Outut Curret (Source) IOH5 V = 5V, VOUT =.5V 1 +5 o C ma Outut Curret (Source) IOH1 V = 1V, VOUT = 9.5V 1 +5 o C ma Outut Curret (Source) IOH15 V = 15V, VOUT = 13.5V 1 +5 o C ma N Threshold Voltage VNTH V = 1V, ISS = -1µA 1 +5 o C V P Threshold Voltage VPTH = V, I = 1µA 1 +5 o C.7.8 V Fuctioal F V =.8V, VIN = V or N 7 +5 o C VOH > VOL < V V = V, VIN = V or N 7 +5 o C V/ V/ V = 18V, VIN = V or N 8A +15 o C V = 3V, VIN = V or N 8 Iut Voltage Low VIL V = 5V, VOH >.5V, VOL <.5V 1,, 3 +5 o C, +15 o C, V (Note ) Iut Voltage High (Note ) VIH V = 5V, VOH >.5V, VOL <.5V 1,, 3 +5 o C, +15 o C, V Iut Voltage Low (Note ) Iut Voltage High (Note ) Tri-State Outut Leakage Tri-State Outut Leakage NOTS: VIL VIH IOZL IOZH V = 15V, VOH > 13.5V, VOL < 1.5V V = 15V, VOH > 13.5V, VOL < 1.5V VIN = V or N VOUT = V VIN = V or N VOUT = V 1. All voltages refereced to device N, 1% testig beig imlemeted.. o/no o test with limits alied to iuts. 1,, 3 +5 o C, +15 o C, - V 1,, 3 +5 o C, +15 o C, 11 - V V = V 1 +5 o C -. - µa +15 o C -1 - µa V = 18V µa V = V 1 +5 o C -. µa +15 o C - 1 µa V = 18V 3 -. µa 3. For accuracy, voltage is measured differetially to V. Limit is.5v max

3 Secificatios C1MS, C19MS TAL. AC LCTRICAL PRFORMANC CHARACTRISTICS PARAMTR SYMOL CONITIONS Proagatio elay Clock to Q Proagatio elay C19MS Reset to Q Proagatio elay C1MS 3-State Proagatio elay C1MS 3-State Trasitio Time Maximum Clock Iut Frequecy TPHL TPLH TPHL TPZH TPZL TPLZ TPHZ TTHL TTLH F V = 5V, VIN = V or N (Note 1, ) V = 5V, VIN = V or N (Note 1, ) V = 5V, VIN = V or N (Note, 3) V = 5V, VIN = V or N (Note, 3) V = 5V, VIN = V or N (Note 1, ) V = 5V, VIN = V or N (Note 1, ) NOTS: 1. = 5F, RL = K, Iut TR, TF < s.. ad +15 o C limits guarateed, 1% testig beig imlemeted. 3. V = 5V, = 5F, RL = 1K, Iut TR, TF < s. ROUP A SUROUPS TMPRATUR MIN MAX UNITS 9 +5 o C - s 1, o C, - 59 s 9 +5 o C - s 1, o C, - 1 s 9 +5 o C - 1 s 1, o C, - 1 s 9 +5 o C - 9 s 1, o C, - 1 s 9 +5 o C - s 1, o C, - 7 s 9 +5 o C 3 - MHz 1, o C,. - MHz TAL 3. LCTRICAL PRFORMANC CHARACTRISTICS PARAMTR SYMOL CONITIONS NOTS TMPRATUR MIN MAX UNITS Suly Curret I V = 5V, VIN = V or N 1,, +5 o C - 5 µa +15 o C - 15 µa V = 1V, VIN = V or N 1,, +5 o C - 1 µa +15 o C - 3 µa V = 15V, VIN = V or N 1,, +5 o C - 1 µa +15 o C - µa Outut Voltage VOL V = 5V, No Load 1, +5 o C, +15 o C, - 5 mv Outut Voltage VOL V = 1V, No Load 1, +5 o C, +15 o C, Outut Voltage VOH V = 5V, No Load 1, +5 o C, +15 o C, Outut Voltage VOH V = 1V, No Load 1, +5 o C, +15 o C, - 5 mv.95 - V V Outut Curret (Sik) IOL5 V = 5V, VOUT =.V 1, +15 o C.3 - ma. - ma Outut Curret (Sik) IOL1 V = 1V, VOUT =.5V 1, +15 o C.9 - ma 1. - ma Outut Curret (Sik) IOL15 V = 15V, VOUT = 1.5V 1, +15 o C. - ma. - ma Outut Curret (Source) IOH5A V = 5V, VOUT =.V 1, +15 o C ma - -. ma 7-139

4 Secificatios C1MS, C19MS TAL 3. LCTRICAL PRFORMANC CHARACTRISTICS (Cotiued) PARAMTR SYMOL CONITIONS NOTS TMPRATUR Outut Curret (Source) IOH5 V = 5V, VOUT =.5V 1, +15 o C ma - -. ma Outut Curret (Source) IOH1 V = 1V, VOUT = 9.5V 1, +15 o C ma ma Outut Curret (Source) IOH15 V =15V, VOUT = 13.5V 1, +15 o C - -. ma - -. ma Iut Voltage Low VIL V = 1V, VOH > 9V, VOL < 1V Iut Voltage High VIH V = 1V, VOH > 9V, VOL < 1V Proagatio elay Clock to Q Proagatio elay C19 Reset to Q Proagatio elay C1MS 3-State Proagatio elay C1MS 3-State Trasitio Time Miimum ata Setu Time,, 3, SRIN, SLIN to Clock Miimum ata Hold Time, 3, SRIN, SLIN to Clock Miimum Clock Pulse Width Maximum Clock Rise ad Fall Time Miimum ata Setu Time Select 1, Select to Clock Miimum ata Hold Time Select 1, Select to Clock TPHL TPLH TPLH TPHL TPZH TPZL TPLZ 1, +5 o C, +15 o C, 1, +5 o C, +15 o C, - 3 V 7 - V V = 1V 1,, 3 +5 o C - s V = 15V 1,, 3 +5 o C - 1 s V = 1V 1,, 3 +5 o C - 18 s V = 15V 1,, 3 +5 o C - 13 s V = 1V 1,, 3, +5 o C - 7 s V = 15V 1,, 3, +5 o C - 5 s TPHZ V = 1V 1,, +5 o C - 5 s V = 15V 1,, +5 o C - s TTHL V = 1V 1,, 3 +5 o C - 1 s TTLH V = 15V 1,, 3 +5 o C - 8 s TS V = 5V 1,, 3 +5 o C - 1 s V = 1V 1,, 3 +5 o C - 7 s V = 15V 1,, 3 +5 o C - 5 s TH V = 5V 1,, 3 +5 o C - s V = 1V 1,, 3 +5 o C - s V = 15V 1,, 3 +5 o C - s TW V = 5V 1,, 3 +5 o C - 18 s V = 1V 1,, 3 +5 o C - 8 s V = 15V 1,, 3 +5 o C - 5 s TR TF V = 5V 1,, 3, 5 +5 o C 3 - µs V = 1V 1,, 3, 5 +5 o C - µs V = 15V 1,, 3, 5 +5 o C 8 - µs TS V = 5V 1,, 3 +5 o C - s V = 1V 1,, 3 +5 o C - s V = 15V 1,, 3 +5 o C - 13 s TH V = 5V 1,, 3 +5 o C - s V = 1V 1,, 3 +5 o C - s V = 15V 1,, 3 +5 o C - s MIN MAX UNITS 7-131

5 Secificatios C1MS, C19MS TAL 3. LCTRICAL PRFORMANC CHARACTRISTICS (Cotiued) PARAMTR SYMOL CONITIONS NOTS TMPRATUR Miimum Reset Pulse TW V = 5V 1,, 3 +5 o C - 3 s Width C19MS V = 1V 1,, 3 +5 o C - s V = 15V 1,, 3 +5 o C - 1 s Iut Caacitace CIN Ay Iut 1, +5 o C F NOTS: 1. All voltages refereced to device N.. The arameters listed o Table 3 are cotrolled via desig or rocess ad are ot directly tested. These arameters are characterized o iitial desig release ad uo desig chages which would affect these characteristics. 3. = 5F, RL = K, Iut TR, TF < s.. = 5F, RL = 1K, Iut TR, TF < s. 5. If more tha oe uit is cascaded, TR should be made less tha or equal to the sumof the trasitio time ad the fixed roagatio delay of the outut of the drivig stage for the estimated caacitive load. MIN MAX UNITS TAL. POST IRRAIATION LCTRICAL PRFORMANC CHARACTRISTICS PARAMTR SYMOL CONITIONS NOTS TMPRATUR MIN MAX UNITS Suly Curret I V = V, VIN = V or N 1, +5 o C - 5 µa N Threshold Voltage VNTH V = 1V, ISS = -1µA 1, +5 o C V N Threshold Voltage elta VTN V = 1V, ISS = -1µA 1, +5 o C - ±1 V P Threshold Voltage VTP = V, I = 1µA 1, +5 o C..8 V P Threshold Voltage elta VTP = V, I = 1µA 1, +5 o C - ±1 V Fuctioal F V = 18V, VIN = V or N 1 +5 o C VOH > V = 3V, VIN = V or N V/ VOL < V/ V Proagatio elay Time TPHL TPLH V = 5V 1,, 3, +5 o C x +5 o C Limit s NOTS: 1. All voltages refereced to device N.. = 5F, RL = K, Iut TR, TF < s. 3. See Table for +5 o C limit.. Read ad Record TAL 5. URN-IN AN LIF TST LTA PARAMTRS +5 o C PARAMTR SYMOL LTA LIMIT Suly Curret - MSI- I ± 1.µA Outut Curret (Sik) IOL5 ± % x Pre-Test Readig Outut Curret (Source) IOH5A ± % x Pre-Test Readig

6 Secificatios C1MS, C19MS TAL. APPLICAL SUROUPS CONFORMANC ROUP MIL-ST-883 MTHO ROUP A SUROUPS RA AN RCOR Iitial Test (Pre ur-i) 1% 5 1, 7, 9 I, IOL5, IOH5A Iterim Test 1 (Post ur-i) 1% 5 1, 7, 9 I, IOL5, IOH5A Iterim Test (Post ur-i) 1% 5 1, 7, 9 I, IOL5, IOH5A PA (Note 1) 1% 5 1, 7, 9, eltas Iterim Test 3 (Post ur-i) 1% 5 1, 7, 9 I, IOL5, IOH5A PA (Note 1) 1% 5 1, 7, 9, eltas Fial Test 1% 5, 3, 8A, 8, 1, 11 rou A Samle 55 1,, 3, 7, 8A, 8, 9, 1, 11 rou Subgrou -5 Samle 55 1,, 3, 7, 8A, 8, 9, 1, 11, eltas Subgrous 1,, 3, 9, 1, 11 Subgrou - Samle 55 1, 7, 9 rou Samle 55 1,, 3, 8A, 8, 9 Subgrous 1, 3 NOT: 1. 5% Parameteric, 3% Fuctioal; Cumulative for Static 1 ad. TAL 7. TOTAL OS IRRAIATION CONFORMANC ROUPS MIL-ST-883 MTHO TST RA AN RCOR PR-IRRA POST-IRRA PR-IRRA POST-IRRA rou Subgrou 55 1, 7, 9 Table 1, 9 Table TAL 8. URN-IN AN IRRAIATION TST CONNCTIONS OSCILLATOR FUNCTION OPN ROUN V 9V ± -.5V C1MS, C19MS 5kHz 5kHz Static ur-i 1 Note 1 Static ur-i Note 1 yamic ur- I Note 1 Irradiatio Note , 9-11, 1-7, 8, 1 1, 3-, 9, , 9-11, 1 NOTS: 1. ach i excet V ad N will have a series resistor of 1K ± 5%, V = 18V ±.5V. ach i excet V ad N will have a series resistor of 7K ± 5%; rou, Subgrou, samle size is dice/wafer, failures, V = 1V ±.5V All Itersil semicoductor roducts are maufactured, assembled ad tested uder ISO9 quality systems certificatio. Itersil roducts are sold by descritio oly. Itersil Cororatio reserves the right to make chages i circuit desig ad/or secificatios at ay time without otice. Accordigly, the reader is cautioed to verify that data sheets are curret before lacig orders. Iformatio furished by Itersil is believed to be accurate ad reliable. However, o resosibility is assumed by Itersil or its subsidiaries for its use; or for ay ifrigemets of atets or other rights of third arties which may result from its use. No licese is grated by imlicatio or otherwise uder ay atet or atet rights of Itersil or its subsidiaries. For iformatio regardig Itersil Cororatio ad its roducts, see web site htt:// 131

7 C1MS, C19MS Logic iagrams SHIFT RIHT * INPUT * 3 V O V 15 OUTPUT * NAL 1 OCK * 11 O 1 * V O 1 V * ALL INPUTS AR PROTCT Y CMOS PROTCTION NTWORK S * 9 S1 * 1 * 5 3 * SHIFT LFT * INPUT 7 V V OCK* O O 13 1 CONTROL TRUTH TAL MO SLCT OUTPUT S S1 NAL 1 Reset ACTION 1 1 Shift Right ( toward ) 1 1 Shift Left ( toward ) Parallel Load X X X Oeratios occur as show above, but oututs assume high imedace X = o t Care 1 = High level = Low level * Level chage FIUR 1. C1MS

8 C1MS, C19MS Logic iagrams (Cotiued) SHIFT RIHT * INPUT * 3 R R V 15 RST * 1 OCK * 11 R 1 * 1 V * ALL INPUTS AR PROTCT Y CMOS PROTCTION NTWORK S * 9 S1 * 1 * 5 3 * SHIFT LFT * INPUT CONTROL TRUTH TAL MO SLCT OCK* S S1 RST X 1 No Chage ACTION 1 1 Shift Right ( toward ) 1 1 Shift Left ( toward ) Parallel Load X X X Reset X = o t Care 1 = High level = Low level * Level chage FIUR. C19MS 7-131

9 Tyical Performace Characteristics C1MS, C19MS OUTPUT LOW (SINK) CURRNT (IOL) (ma) AMINT TMPRATUR (T A ) = +5 o C AT-TO-SOURC VOLTA (VS) = 15V 1V 5V OUTPUT LOW (SINK) CURRNT (IOL) (ma) AMINT TMPRATUR (T A ) = +5 o C AT-TO-SOURC VOLTA (VS) = 15V 1V 5V RAIN-TO-SOURC VOLTA (VS) (V) FIUR 3. TYPICAL N-CHANNL OUTPUT LOW (SINK) CURRNT CHARACTRISTICS RAIN-TO-SOURC VOLTA (VS) (V) FIUR. MINIMUM N-CHANNL OUTPUT LOW (SINK) CURRNT CHARACTRISTICS RAIN-TO-SOURC VOLTA (VS) (V) AMINT TMPRATUR (T A ) = +5 o C AT-TO-SOURC VOLTA (VS) = -5V -1V -15V OUTPUT HIH (SOURC) CURRNT (IOH) (ma) RAIN-TO-SOURC VOLTA (VS) (V) AMINT TMPRATUR (T A ) = +5 o C AT-TO-SOURC VOLTA (VS) = -5V -1V -15V OUTPUT HIH (SOURC) CURRNT (IOH) (ma) FIUR 5. TYPICAL P-CHANNL OUTPUT HIH (SOURC) CURRNT CHARACTRISTICS FIUR. MINIMUM P-CHANNL OUTPUT HIH (SOURC) CURRNT CHARACTRISTICS PROPAATION LAY TIM (tplh, tphl) (s) 3 1 AMINT TMPRATUR (T A ) = +5 o C SUPPLY VOLTA (V) = 5V 1V 15V 8 1 LOA CAPACITANC () (F) FIUR 7. TYPICAL PROPAATION LAY TIM AS A FUNC- TION OF LOA CAPACITANC, (OCK TO Q) TRANSITION TIM (tthl, ttlh) (s) AMINT TMPRATUR (T A ) = +5 o C SUPPLY VOLTA (V) = 5V 8 1 LOA CAPACITANC () (F) 1V 15V FIUR 8. TYPICAL TRANSITION TIM AS A FUNCTION OF LOA CAPACITANC

1 1 1 1 1 3 1 FRQUNCY (fφ) (khz) FIUR 9.

10 C1MS, C19MS Tyical Performace Characteristics (Cotiued) TYP. YNAMIC POWR ISSIPATION (P) (µw) AMINT TMPRATUR (T A ) = +5 o C SUPPLY VOLTA (V) = 5V V 15V 1 8 = 5F = 15F FRQUNCY (fφ) (khz) FIUR 9. TYPICAL POWR ISSIPATION AS A FUNCTION OF FRQUNCY Chi imesios ad Pad Layouts C1MS C19MS imesios i arethesis are i millimeters ad are derived from the basic ich dimesios as idicated. rid graduatios are i mils (1-3 ich). MTALLIZATION: Thickess: 11kÅ 1kÅ, AL. PASSIVATION: 1.kÅ - 15.kÅ, Silae ON PAS:. iches X. iches MIN I THICKNSS:.198 iches -.18 iches 7-131

CD4070 CD4077 CMOS Quad Exclusive OR and Exclusive NOR Gates

CD4070 CD4077 CMOS Quad Exclusive OR and Exclusive NOR Gates CD7 CD77 CMOS Quad Exclusive OR ad Exclusive NOR Gates Features High Voltage Tyes (V Ratig) Piouts CD7BMS TOP VIEW CD7BMS - Quad Exclusive OR Gate CD77BMS - Quad Exclusive NOR Gate Medium Seed Oeratio