CD4071, CD4072 CD4075
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1 , MOS OR ate eatures igh-voltage Tyes (V Ratig) MS Quad -Iut OR ate MS ual -Iut OR ate MS Trile -Iut OR ate Medium Seed Oeratio: - tpl, tpl = s (ty) at V % Tested for Quiescet urret at V Maximum Iut urret of µ at V Over ull Package Temerature Rage; at V ad + o Stadardized Symmetrical Outut haracteristics Noise Margi (Over ull Package Temerature Rage): - V at = V - V at = V -.V at = V V, V ad V Parametric Ratigs Meets ll Requiremets of J Tetative Stadard No., Stadard Secificatios for escritio of Series MOS evices escritio MS, MS ad MS OR gates rovide the system desiger with direct imlemetatio of the ositive-logic OR fuctio ad sulemet the existig family of MOS gates. The MS, MS ad MS are sulied i these lead outlie ackages: raze Seal IP Q rit Seal IP eramic latack W, Oly Piout J = + K = + J = N MS TOP VIW MS TOP VIW MS TOP VIW 9 9 N = NO ONNTION M = + L = + K = N I L = + + I K = J = + +
2 MS, MS, MS uctioal iagram MS MS MS 9 J K L M J K 9 L I 9 J K
3 Secificatios MS, MS, MS bsolute Maximum Ratigs Suly Voltage Rage, () V to +V (Voltage Refereced to Termials) Iut Voltage Rage, ll Iuts V to +.V Iut urret, y Oe Iut ±m Oeratig Temerature Rage o to + o Package Tyes,, K, Storage Temerature Rage (TST) o to + o Lead Temerature (urig Solderig) o t istace / ± / Ich (.9mm ±.9mm) from case for s Maximum Reliability Iformatio Thermal Resistace θ ja θ jc eramic IP ad RIT Package..... o /W o /W latack Package o /W o /W Maximum Package Power issiatio (P) at + o or T = - o to + o (Package Tye,, K) mw or T = + o to + o (Package Tye,, K).....erate Liearity at mw/ o to mw evice issiatio er Outut Trasistor mw or T = ull Package Temerature Rage (ll Package Tyes) Juctio Temerature o TL. LTRIL PRORMN RTRISTIS ROUP LIMITS PRMTR SYMOL ONITIONS (NOT ) SUROUPS TMPRTUR MIN MX UNITS Suly urret I = V, VIN = or N + o -. µ + o - µ = V, VIN = or N - o -. µ Iut Leakage urret IIL VIN = or N = + o o - - = V - o - - Iut Leakage urret II VIN = or N = + o - + o - = V - o - Outut Voltage VOL = V, No Load,, + o, + o, - o - mv Outut Voltage VO = V, No Load (Note ),, + o, + o, - o.9 - V Outut urret (Sik) IOL = V, VOUT =.V + o. - m Outut urret (Sik) IOL = V, VOUT =.V + o. - m Outut urret (Sik) IOL = V, VOUT =.V + o. - m Outut urret (Source) IO = V, VOUT =.V + o - -. m Outut urret (Source) IO = V, VOUT =.V + o - -. m Outut urret (Source) IO = V, VOUT = 9.V + o - -. m Outut urret (Source) IO = V, VOUT =.V + o - -. m N Threshold Voltage VNT = V, ISS = -µ + o V P Threshold Voltage VPT = V, I = µ + o.. V uctioal =.V, VIN = or N + o VO > VOL < V = V, VIN = or N + o / / = V, VIN = or N + o = V, VIN = or N - o Iut Voltage Low VIL = V, VO >.V, VOL <.V,, + o, + o, - o -. V (Note ) Iut Voltage igh (Note ) VI = V, VO >.V, VOL <.V,, + o, + o, - o. - V Iut Voltage Low (Note ) Iut Voltage igh (Note ) NOTS: VIL VI = V, VO >.V, VOL <.V = V, VO >.V, VOL <.V. ll voltages refereced to device N, % testig beig imlemeted.. o/no o test with limits alied to iuts.,, + o, + o, - o - V,, + o, + o, - o - V. or accuracy, voltage is measured differetially to. Limit is.v max.
4 Secificatios MS, MS, MS TL. LTRIL PRORMN RTRISTIS ROUP LIMITS PRMTR SYMOL ONITIONS (NOTS, ) SUROUPS TMPRTUR MIN MX UNITS Proagatio elay TPL = V, VIN = or N 9 + o - s TPL, + o, - o - s Trasitio Time TTL = V, VIN = or N 9 + o - s TTL, + o, - o - s NOTS:. L =, RL = K, Iut TR, T < s.. - o ad + o limits guarateed, % testig beig imlemeted. TL. LTRIL PRORMN RTRISTIS LIMITS PRMTR SYMOL ONITIONS NOTS TMPRTUR MIN MX UNITS Suly urret I = V, VIN = or N, - o, + o -. µ + o -. µ = V, VIN = or N, - o, + o -. µ + o - µ = V, VIN = or N, - o, + o -. µ + o - µ Outut Voltage VOL = V, No Load, + o, + o, - mv - o Outut Voltage VOL = V, No Load, + o, + o, - o Outut Voltage VO = V, No Load, + o, + o, - o Outut Voltage VO = V, No Load, + o, + o, - o - mv.9 - V V Outut urret (Sik) IOL = V, VOUT =.V, + o. - m - o. - m Outut urret (Sik) IOL = V, VOUT =.V, + o.9 - m - o. - m Outut urret (Sik) IOL = V, VOUT =.V, + o. - m - o. - m Outut urret (Source) IO = V, VOUT =.V, + o - -. m - o - -. m Outut urret (Source) IO = V, VOUT =.V, + o - -. m - o - -. m Outut urret (Source) IO = V, VOUT = 9.V, + o m - o - -. m Outut urret (Source) IO =V, VOUT =.V, + o - -. m - o - -. m Iut Voltage Low VIL = V, VO > 9V, VOL < V, + o, + o, - o - V Iut Voltage igh VI = V, VO > 9V, VOL < V, + o, + o, - o Proagatio elay TPL TPL - V = V,, + o - s = V,, + o - 9 s
5 Secificatios MS, MS, MS TL. LTRIL PRORMN RTRISTIS (otiued) PRMTR SYMOL ONITIONS NOTS TMPRTUR Trasitio Time TTL = V,, + o - s TTL = V,, + o - s Iut aacitace IN y Iut, + o -. NOTS:. ll voltages refereced to device N.. The arameters listed o Table are cotrolled via desig or rocess ad are ot directly tested. These arameters are characterized o iitial desig release ad uo desig chages which would affect these characteristics.. L =, RL = K, Iut TR, T < s. MIN LIMITS MX UNITS TL. POST IRRITION LTRIL PRORMN RTRISTIS LIMITS PRMTR SYMOL ONITIONS NOTS TMPRTUR MIN MX UNITS Suly urret I = V, VIN = or N, + o -. µ N Threshold Voltage VNT = V, ISS = -µ, + o V N Threshold Voltage VTN = V, ISS = -µ, + o - ± V elta P Threshold Voltage VTP = V, I = µ, + o.. V P Threshold Voltage VTP = V, I = µ, + o - ± V elta uctioal = V, VIN = or N = V, VIN = or N + o VO > / Proagatio elay Time TPL TPL NOTS:. ll voltages refereced to device N.. L =, RL = K, Iut TR, T < s. VOL < / = V,,, + o -. x + o Limit. See Table for + o limit.. Read ad Record V s TL. URN-IN N LI TST LT PRMTRS + O PRMTR SYMOL LT LIMIT Suly urret - SSI I ±.µ Outut urret (Sik) IOL ± % x Pre-Test Readig Outut urret (Source) IO ± % x Pre-Test Readig TL. PPLIL SUROUPS ONORMN ROUP MIL-ST- MTO ROUP SUROUPS R N ROR Iitial Test (Pre ur-i) %,, 9 I, IOL, IO Iterim Test (Post ur-i) %,, 9 I, IOL, IO Iterim Test (Post ur-i) %,, 9 I, IOL, IO P (Note ) %,, 9, eltas Iterim Test (Post ur-i) %,, 9 I, IOL, IO P (Note ) %,, 9, eltas ial Test %,,,,, rou Samle,,,,,, 9,,
6 Secificatios MS, MS, MS ONORMN ROUP TL. PPLIL SUROUPS (otiued) MIL-ST- MTO ROUP SUROUPS R N ROR rou Subgrou - Samle,,,,,, 9,,, eltas Subgrous,,, 9,, Subgrou - Samle,, 9 rou Samle,,,,, 9 Subgrous, NOT:. % Parameteric, % uctioal; umulative for Static ad. TL. TOTL OS IRRITION MIL-ST- TST R N ROR ONORMN ROUPS MTO PR-IRR POST-IRR PR-IRR POST-IRR rou Subgrou,, 9 Table, 9 Table TL. URN-IN N IRRITION TST ONNTIONS UNTION OPN ROUN 9V ± -.V PRT NUMR MS Static ur-i,,,,, - 9, - Note Static ur-i Note yamic ur- I Note Irradiatio Note,,,,,,,, 9, - -,,,,,,,, 9,,,,,,,,,, 9, - PRT NUMR MS Static ur-i Note,,, -,, 9 - Static ur-i Note yamic ur- I Note Irradiatio Note,,, -, 9 -,,, -, 9 -,,, -, 9 -, PRT NUMR MS Static ur-i Note, 9, -,,, - Static ur-i Note yamic ur- I Note Irradiatio Note, 9, -,, - -, 9, -,, -, 9, -,, - OSILLTOR kz kz NOT:. ach i excet ad N will have a series resistor of K ± %, = V ±.V. ach i excet ad N will have a series resistor of K ± %; rou, Subgrou, samle size is dice/wafer, failures, = V ±.V
7 MS, MS, MS (,, ) (,, ) (,9, ) LL INPUTS PROTT Y MOS PROTTION NTWORK IUR. SMTI IRM OR MS ( O INTIL TS) (,, ) (, 9, ) J (,, ) IUR. LOI IRM OR MS ( O INTIL TS) INV. () () () (9) () INV INV INV INVRTRS, N R INTIL TO INVRTR. LL INPUTS PROTT Y MOS PROTTION NTWORK IUR. SMTI IRM OR MS ( O INTIL TS) () () (9) () J () IUR. LOI IRM OR MS ( O INTIL TS)
8 MS, MS, MS (, ) 9 (, ) (, ) (, ) LL INPUTS PROTT Y MOS PROTTION NTWORK IUR. SMTI IRM OR MS ( O INTIL TS) (, ) (, ) (, ) J 9 (, ) IUR. LOI IRM OR MS ( O INTIL TS) Tyical Performace haracteristics OUTPUT VOLT (VO) (V) MINT TMPRTUR (T ) = + o SUPPLY VOLT () = V V V PROPTION LY TIM (tpl, tpl) (s) MINT TMPRTUR (T ) = + o SUPPLY VOLT () = V V V INPUT VOLT (VIN) (V) IUR. TYPIL VOLT TRNSR RTRIS- TIS LO PITN (L) () IUR. TYPIL PROPTION LY TIM S UNTION O LO PITN
9 MS, MS, MS Tyical Performace haracteristics (otiued) OUTPUT LOW (SINK) URRNT (IOL) (m) MINT TMPRTUR (T ) = + o T-TO-SOUR VOLT (VS) = V V V OUTPUT LOW (SINK) URRNT (IOL) (m) MINT TMPRTUR (T ) = + o T-TO-SOUR VOLT (VS) = V V V RIN-TO-SOUR VOLT (VS) (V) IUR 9. TYPIL OUTPUT LOW (SINK) URRNT RTRISTIS RIN-TO-SOUR VOLT (VS) (V) IUR. MINIMUM OUTPUT LOW (SINK) URRNT RTRISTIS RIN-TO-SOUR VOLT (VS) (V) MINT TMPRTUR (T ) = + o T-TO-SOUR VOLT (VS) = -V -V -V OUTPUT I (SOUR) URRNT (IO) (m) RIN-TO-SOUR VOLT (VS) (V) MINT TMPRTUR (T ) = + o T-TO-SOUR VOLT (VS) = -V -V -V OUTPUT I (SOUR) URRNT (IO) (m) IUR. TYPIL OUTPUT I (SOUR) URRNT RTRISTIS TRNSITION TIM (ttl, ttl) (s) MINT TMPRTUR (T ) = + o SUPPLY VOLT () = V LO PITN (L) () V V IUR. TYPIL TRNSITION TIM S UNTION O LO PITN IUR. MINIMUM OUTPUT I (SOUR) URRNT RTRISTIS POWR ISSIPTION PR T (P) (µw) MINT TMPRTUR (T ) = + o SUPPLY VOLT () = V V V V L = L = INPUT RQUNY (fi) (kz) IUR. TYPIL YNMI POWR ISSIPTIONS UNTION O RQUNY
10 MS, MS, MS hi imesios ad Pad Layouts MS MS MS imesios i aretheses are i millimeters ad are derived from the basic ich dimesios as idicated. rid graduatios are i mils ( - ich) MTLLIZTION: Thickess: kå kå, L. PSSIVTION:.kÅ -.kå, Silae ON PS:. iches X. iches MIN I TIKNSS:.9 iches -. iches
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